公开(公告)号：US5511405A

公开(公告)日：1996-04-30

申请号：US235978

申请日：1994-05-02

Applicant: Shuichi Kikuchi

Inventor： Shuichi Kikuchi

IPC: G11B23/03 ,  B21D28/06

CPC classification number: B21D28/06

Abstract: A method of manufacturing shutters for computer disks, optical disks and the like, includes forming a rib on a connecting member formed between adjoining shutter blanks during bending and cutting processing. The rib is concave in cross-section and increases a strength of the connecting portion such that stress applied during bending processing, and movement of the rolled steel which is used for manufacturing, does not deform the connecting portion. According to this, processing speed for manufacturing may be increased and further, thinner material may be utilized in forming the shutters. Also, at a later stage of processing, the convex ribs may again be flattened.

Abstract translation: 一种制造计算机盘，光盘等的百叶窗的方法包括在弯曲和切割加工期间在邻接的挡板坯件之间形成的连接件上形成肋。 该肋在横截面上是凹的，并且增加连接部的强度，使得弯曲加工期间施加的应力和用于制造的轧制钢的移动不会使连接部变形。 据此，可以提高制造的加工速度，并且还可以在形成百叶窗时使用更薄的材料。 此外，在稍后的处理阶段，凸肋可以再次变平。

公开(公告)号：US5454209A

公开(公告)日：1995-10-03

申请号：US909752

申请日：1992-07-07

Applicant: Shuichi Kikuchi

Inventor： Shuichi Kikuchi

IPC: B65B11/54 ,  B65B25/00 ,  B65B61/20 ,  B65C1/02 ,  B65B61/02

CPC classification number: B65B25/002

Abstract: A method of packaging an article, such as a disk cassette or a tape cassette, in a wrapping film having at least a printed portion to be attached adhesively to the surface of the article comprises wrapping the article in the wrapping film, and pressing the printed portion to the surface of the article to attach the printed portion adhesively to the surface of the article so that the printed portion remains on the surface of the article when the wrapping film is torn off. Characters and patterns to be formed on both the article and the wrapping film are printed on the wrapping film and the characters and patterns to be formed on the surface of the article are formed in the printed portion of the wrapping film and the printed portion is attached adhesively to the surface of the article when the article is wrapped in the wrapping film. Therefore, nothing needs to be printed on the article, which reduces the manufacturing cost of the article.

Abstract translation: 将诸如盘盒或带盒的物品包装在至少具有粘贴到制品表面上的印刷部分的包装膜中的方法包括将物品包裹在包装膜中，并将印刷 部分到制品的表面以将打印部分粘附到制品的表面上，使得当包装膜被撕下时印刷部分保留在制品的表面上。 在包装膜上印刷要在物品和包装膜上形成的特征和图案，并且在包装膜的印刷部分上形成待形成在物品表面上的字符和图案，并且打印部分被附接 当制品被包裹在包装膜中时粘合到制品的表面。 因此，不需要在物品上印刷，这降低了制品的制造成本。

公开(公告)号：US5327314A

公开(公告)日：1994-07-05

申请号：US934244

申请日：1992-08-25

Applicant: Shuichi Kikuchi ,  Kiyoyuki Miyata

Inventor： Shuichi Kikuchi ,  Kiyoyuki Miyata

IPC: G11B23/033 ,  G11B23/50 ,  G11B23/03 ,  G11B3/00

CPC classification number: G11B23/505 ,  G11B23/0332

Abstract: A lifter for a disk mounted in a disk cartridge comprises a lifter body formed of a flexible thin plate material and having a fold, folded at a predetermined angle so as to define a fixing member at one side of the fold and a pressing member at the other. A cutout is formed at a position across the fold to minimize distorting forces concentrated at the fold.

Abstract translation: 用于安装在盘盒中的盘的升降机包括由柔性薄板材料形成并具有折叠的提升机构，折叠部以预定角度折叠以便在折叠部的一侧限定固定部件， 其他。 在折叠处的位置处形成切口以最小化集中在折叠处的扭曲力。

公开(公告)号：US5293995A

公开(公告)日：1994-03-15

申请号：US995975

申请日：1992-12-23

Applicant: Yuji Iwaki ,  Shuichi Kikuchi ,  Mika Kaneko ,  Toshiro Kobayashi

Inventor： Yuji Iwaki ,  Shuichi Kikuchi ,  Mika Kaneko ,  Toshiro Kobayashi

IPC: B65D85/00 ,  B65D85/57 ,  G11B33/04

CPC classification number: G11B33/0438

Abstract: A storage case for disc-shaped recording media contained within respective substantially flat rectangular housings is constituted by a one-piece molded plastic member including a central spine having opposed side edges joined by flexible hinges with respective rectangular covers which are swingable between closed positions, in which the covers extend substantially parallel to each other from the spine with their inner surfaces in confronting relation, and opened positions in which the covers are spread angularly apart, elements on the covers for holding respective disc-shaped recording media in their rectangular housings against the inner surfaces of the respective covers, and a holder on the spine extending from the latter between the covers in the closed positions of the latter for embracing and holding at least one additional disc-shaped recording medium at an edge portion of its respective rectangular housing so as to accommodate such at least one additional disc-shaped recording medium in its respective housing between the disc-shaped recording media in their respective housings held against the inner surfaces of the covers.

Abstract translation: 包含在相应的基本上平坦的矩形壳体内的盘形记录介质的储存盒由一体式模制塑料构件构成，该塑料构件包括具有相对的侧边缘的相对侧边缘的连接的柔性铰链以及可在关闭位置之间摆动的相应矩形盖 所述盖子从脊柱彼此基本平行地延伸，其内表面处于相对的关系，以及打开的位置，其中盖子成角度地分开，盖子上的元件用于将相应的盘形记录介质保持在其矩形壳体中， 相应盖的内表面以及脊柱上的保持器，在后者处于封闭位置的盖之间延伸，用于在其各自的矩形壳体的边缘部分包围和保持至少一个附加的盘形记录介质， 以适应这种至少一个附加的盘形记录m 在它们各自的壳体中的圆盘形记录介质在它们各自的壳体内保持抵靠盖的内表面。

公开(公告)号：US08552469B2

公开(公告)日：2013-10-08

申请号：US11862585

申请日：2007-09-27

Applicant: Shuichi Kikuchi ,  Shigeaki Okawa ,  Kiyofumi Nakaya ,  Shuji Tanaka

Inventor： Shuichi Kikuchi ,  Shigeaki Okawa ,  Kiyofumi Nakaya ,  Shuji Tanaka

IPC: H01L29/66 ,  H01L29/47

CPC classification number: H01L27/0788 ,  H01L27/0255 ,  H01L29/0615 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/47 ,  H01L29/866 ,  H01L29/872

Abstract: There is a problem that a reverse off-leak current becomes too large in a Schottky barrier diode. A semiconductor device of the present invention includes P-type first and second anode diffusion layers formed in an N-type epitaxial layer, N-type cathode diffusion layers formed in the epitaxial layer, a P-type third anode diffusion layer formed in the epitaxial layer so as to surround the first and second anode diffusion layers and to extend toward the cathode diffusion layers, and a Schottky barrier metal layer formed on the first and second anode diffusion layers.

Abstract translation: 在肖特基势垒二极管中存在反向漏电流变得过大的问题。 本发明的半导体器件包括形成在N型外延层中的P型第一和第二阳极扩散层，在外延层中形成的N型阴极扩散层，形成在外延层中的P型第三阳极扩散层 以便围绕第一和第二阳极扩散层并朝向阴极扩散层延伸，以及形成在第一和第二阳极扩散层上的肖特基势垒金属层。

公开(公告)号：US07705399B2

公开(公告)日：2010-04-27

申请号：US11708685

申请日：2007-02-21

Applicant: Shuji Tanaka ,  Shuichi Kikuchi ,  Kiyofumi Nakaya

Inventor： Shuji Tanaka ,  Shuichi Kikuchi ,  Kiyofumi Nakaya

IPC: H01L29/76

CPC classification number: H01L29/7835 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/402 ,  H01L29/66659

Abstract: The invention provides a high voltage MOS transistor having a high gate breakdown voltage and a high source/drain breakdown voltage and having a low on-resistance. A gate electrode is formed on an epitaxial silicon layer with a LOCOS film being interposed therebetween. A P-type first drift layer is formed on the left side of the LOCOS film, and a P+-type source layer is disposed on the surface of the epitaxial silicon layer on the right side of the LOCOS film, being opposed to the first drift layer over the gate electrode. A P-type second drift layer is formed by being diffused in the epitaxial silicon layer deeper than the first drift layer, extending from under the first drift layer to under the left side of the LOCOS film. A recess is formed in a bottom portion of the second drift layer under the left end of the LOCOS film.

Abstract translation: 本发明提供具有高栅极击穿电压和高源极/漏极击穿电压并具有低导通电阻的高压MOS晶体管。 栅电极形成在外延硅层上，其中介于其间的LOCOS膜。 在LOCOS膜的左侧形成P型第一漂移层，并且在LOCOS膜的右侧的外延硅层的表面上设置P +型源极层，与第一漂移相对 层上的栅电极。 通过在比第一漂移层更深的外延硅层中扩散P型第二漂移层，从第一漂移层下方延伸到LOCOS膜的左侧。 在LOCOS膜的左端下方的第二漂移层的底部形成凹部。

公开(公告)号：US07652307B2

公开(公告)日：2010-01-26

申请号：US11516733

申请日：2006-09-07

Applicant: Shuichi Kikuchi ,  Kiyofumi Nakaya ,  Shigeaki Okawa

Inventor： Shuichi Kikuchi ,  Kiyofumi Nakaya ,  Shigeaki Okawa

IPC: H01L29/00

CPC classification number: H01L29/0696 ,  H01L29/0619 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/4933 ,  H01L29/7816

Abstract: In a semiconductor device of the present invention, a MOS transistor is disposed in an elliptical shape. Linear regions in the elliptical shape are respectively used as the active regions, and round regions in the elliptical shape is used respectively as the inactive regions. In each of the inactive regions, a P type diffusion layer is formed to coincide with a round shape. Another P type diffusion layer is formed in a part of one of the inactive regions. These P type diffusion layers are formed as floating diffusion layers, are capacitively coupled to a metal layer on an insulating layer, and assume a state where predetermined potentials are respectively applied thereto. This structure makes it possible to maintain current performance of the active regions, while improving the withstand voltage characteristics in the inactive regions.

Abstract translation: 在本发明的半导体器件中，MOS晶体管被设置为椭圆形。 分别使用椭圆形状的线性区域作为有效区域，椭圆形状的圆形区域分别用作非活性区域。 在每个非活性区域中，形成P型扩散层以与圆形重合。 另一个P型扩散层形成在一个非活性区域的一部分中。 这些P型扩散层形成为浮动扩散层，电容耦合到绝缘层上的金属层，并且呈现分别施加预定电位的状态。 这种结构使得有可能保持有源区的电流性能，同时提高无源区的耐压特性。

公开(公告)号：US07291883B2

公开(公告)日：2007-11-06

申请号：US11360286

申请日：2006-02-22

Applicant: Ryo Kanda ,  Shuichi Kikuchi ,  Seiji Otake

Inventor： Ryo Kanda ,  Shuichi Kikuchi ,  Seiji Otake

IPC: H01L29/792

CPC classification number: H01L29/7816 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/456 ,  H01L29/66681

Abstract: In a conventional semiconductor device, there is a problem that an N-type diffusion region provided for protecting an element from an overvoltage is narrow and a breakdown current is concentrated so that a PN junction region for protection is broken. In a semiconductor device of the present invention, an N-type buried diffusion layer is formed across a substrate and an epitaxial layer. A P-type buried diffusion layer is formed across a wider region on an upper surface of the N-type buried diffusion layer so that a PN junction region for overvoltage protection is formed. A P-type diffusion layer is formed so as to be connected to the P-type diffusion layer. A breakdown voltage of the PN junction region is lower than a breakdown voltage between a source and a drain. With this structure, the concentration of the breakdown current is prevented so that the semiconductor device can be protected from the overvoltage.

Abstract translation: 在传统的半导体器件中，存在用于保护元件免于过电压的N型扩散区域窄并且击穿电流被集中以使得用于保护的PN结区域被破坏的问题。 在本发明的半导体器件中，在衬底和外延层上形成N型掩埋扩散层。 在N型掩埋扩散层的上表面上的较宽区域上形成P型埋入扩散层，从而形成用于过电压保护的PN结区域。 P型扩散层形成为与P型扩散层连接。 PN结区域的击穿电压低于源极和漏极之间的击穿电压。 利用这种结构，防止了击穿电流的集中，从而可以防止半导体器件免受过电压。

公开(公告)号：US20070200195A1

公开(公告)日：2007-08-30

申请号：US11708682

申请日：2007-02-21

Applicant: Shuji Tanaka ,  Shuichi Kikuchi ,  Kiyofumi Nakaya ,  Kazuhiro Yoshitake

Inventor： Shuji Tanaka ,  Shuichi Kikuchi ,  Kiyofumi Nakaya ,  Kazuhiro Yoshitake

IPC: H01L23/58

CPC classification number: H01L29/0878 ,  H01L29/0688 ,  H01L29/0847 ,  H01L29/404 ,  H01L29/66659 ,  H01L29/7835

Abstract: The invention provides a high voltage MOS transistor having a high source/drain breakdown voltage of about 300V and a low on-resistance. An N-type body layer is formed extending from a source layer side to under a gate electrode. A P-type second drift layer is formed in an epitaxial semiconductor layer by being diffused deeper than a first drift layer, extending from under the first drift layer to under the gate electrode and forming a PN junction with the body layer under the gate electrode. A surface of the body layer between this second drift layer and the source layer serves as a channel region. The first drift layer is formed at a distance from a left end of the gate electrode where electric field concentration easily occurs.

Abstract translation: 本发明提供了具有约300V的高源/漏击穿电压和低导通电阻的高压MOS晶体管。 形成从源极侧向栅电极延伸的N型体层。 通过比第一漂移层更深地扩散在外延半导体层中形成P型第二漂移层，该第一漂移层从第一漂移层下方延伸到栅电极下方，并与栅电极下方的体层形成PN结。 该第二漂移层和源极层之间的体层的表面用作沟道区。 第一漂移层形成在距离电极容易发生电场浓度的栅电极的左端一定距离处。

公开(公告)号：US20070148892A1

公开(公告)日：2007-06-28

申请号：US11614527

申请日：2006-12-21

Applicant: Seiji Otake ,  Ryo Kanda ,  Shuichi Kikuchi

Inventor： Seiji Otake ,  Ryo Kanda ,  Shuichi Kikuchi

IPC: H01L21/331

CPC classification number: H01L29/735 ,  H01L29/0692 ,  H01L29/6625

Abstract: In a semiconductor device of the present invention, an N type epitaxial layer is stacked on a P type single crystal silicon substrate. In the epitaxial layer, an N type diffusion layer as a base draw-out region, P type diffusion layers as an emitter region, and P type diffusion layers as a collector region are formed. The emitter region has a region having a larger diffusion width in a portion deeper than in a vicinity of a surface thereof. In a lateral PNP transistor, a smallest base width is formed in a deep portion of the epitaxial layer. By use of this structure, even in a case where the collector region is narrowed, a desired hfe value can be realized. Thus, the device size can be reduced.

Abstract translation: 在本发明的半导体器件中，N型外延层层叠在P型单晶硅基板上。 在外延层中，形成作为基极引出区域的N型扩散层，作为发射极区域的P型扩散层和作为集电极区域的P型扩散层。 发射极区域具有比在其表面附近更深的部分具有较大扩散宽度的区域。 在横向PNP晶体管中，在外延层的深部形成最小的基极宽度。 通过使用该结构，即使在集电极区域变窄的情况下，也能够实现期望的hfe值。 因此，可以减小设备尺寸。