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137 条记录 (耗时 0.041 秒)

    Memory device having a transistor and one resistant element as a storing means and method for driving the memory device
    91.
    发明申请
    Memory device having a transistor and one resistant element as a storing means and method for driving the memory device 有权
    具有晶体管和一个电阻元件作为存储装置的存储装置和用于驱动存储装置的方法

    公开(公告)号：US20050095775A1

    公开(公告)日：2005-05-05

    申请号：US10995116

    申请日：2004-11-24

    申请人： In-Kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    发明人： In-Kyeong Yoo ,  Sun-ae Seo ,  Hyun-jo Kim

    IPC分类号： H01L27/10 ,  G11C11/401 ,  G11C11/404 ,  G11C16/04 ,  H01L21/00 ,  H01L21/822 ,  H01L21/8246 ,  H01L27/112 ,  H01L29/792 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L49/02

    CPC分类号： H01L27/11206 ,  G11C16/0475 ,  H01L27/112

    摘要： A memory device having one transistor and one resistant element as a storing means and a method for driving the memory device, includes an NPN-type transistor formed on a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate to cover the transistor in which a contact hole exposing a source region of the transistor is formed, a resistant material in which a bit data “0” or “1” is written connected to the source region of the transistor by a conductive plug or an insulating film, and a conductive plate contacting the resistant material. The memory device exhibits improved degree of integration, reduced current consumption by lengthening a refresh period thereof, and enjoys simplified manufacturing process due to a simple memory cell structure.

    摘要翻译： 具有一个晶体管和一个电阻元件作为存储装置的存储器件和用于驱动存储器件的方法包括形成在半导体衬底上的NPN型晶体管，形成在半导体衬底上以覆盖晶体管的层间绝缘膜， 形成暴露晶体管的源极区域的接触孔，通过导电插塞或绝缘膜将位数据“0”或“1”写入的电阻材料连接到晶体管的源极区域，并且导电 板接触抵抗材料。 存储器件通过延长其刷新周期而呈现出提高的集成度，降低的电流消耗，并且由于简单的存储单元结构而享有简化的制造工艺。

    Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement
    93.
    发明授权
    Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement 有权
    具有域壁移动单元和磁阻装置磁化布置的信息存储装置

    公开(公告)号：US08537506B2

    公开(公告)日：2013-09-17

    申请号：US12801712

    申请日：2010-06-22

    申请人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    发明人： Ji-young Bae ,  Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo

    IPC分类号： G11B5/39

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808 ,  H01L43/08

    摘要： An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.

    摘要翻译： 信息存储装置包括磁道和磁畴壁移动单元。 磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。 磁畴壁移动单元构造成至少移动磁畴壁。 信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。 磁阻装置包括钉扎层，自由层和布置在其间的分离层。 被钉扎层具有固定的磁化方向。 自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

    Graphene Electronic Device And Method Of Fabricating The Same
    95.
    发明申请
    Graphene Electronic Device And Method Of Fabricating The Same 有权
    石墨烯电子器件及其制造方法

    公开(公告)号：US20120175595A1

    公开(公告)日：2012-07-12

    申请号：US13329842

    申请日：2011-12-19

    申请人： Hyun-jong Chung ,  Jin-seong Heo ,  Hee-jun Yang ,  Sun-ae Seo ,  Sung-hoon Lee

    发明人： Hyun-jong Chung ,  Jin-seong Heo ,  Hee-jun Yang ,  Sun-ae Seo ,  Sung-hoon Lee

    IPC分类号： H01L29/772 ,  H01L21/336

    CPC分类号： H01L29/66477 ,  H01L29/42384 ,  H01L29/775 ,  H01L29/78684

    摘要： A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.

    摘要翻译： 石墨烯电子器件包括在衬底上的石墨烯通道层，石墨烯通道层的端部上的源电极和在石墨烯通道层的另一端部上的漏电极，石墨烯通道层上的栅极氧化物 源电极和漏电极以及栅极氧化物上的栅电极。 栅极氧化物具有与源电极和漏电极之间的石墨烯沟道层基本相同的形状。

    Graphene Electronic Devices
    98.
    发明申请
    Graphene Electronic Devices 有权
    石墨烯电子器件

    公开(公告)号：US20120132893A1

    公开(公告)日：2012-05-31

    申请号：US13242177

    申请日：2011-09-23

    申请人： Jin-seong Heo ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hyun-jong Chung ,  Hee-jun Yang

    发明人： Jin-seong Heo ,  Sun-ae Seo ,  Sung-hoon Lee ,  Hyun-jong Chung ,  Hee-jun Yang

    IPC分类号： H01L29/16 ,  H01L29/78 ,  B82Y99/00

    CPC分类号： H01L29/778 ,  H01L29/0657 ,  H01L29/1606

    摘要： A graphene electronic device includes a gate electrode, a gate oxide disposed on the gate electrode, a graphene channel layer formed on the gate oxide, and a source electrode and a drain electrode respectively disposed on both ends of the graphene channel layer. In the graphene channel layer, a plurality of nanoholes are arranged in a single line in a width direction of the graphene channel layer.

    摘要翻译： 石墨烯电子器件包括栅电极，设置在栅电极上的栅极氧化物，形成在栅极氧化物上的石墨烯沟道层，以及分别设置在石墨烯沟道层两端的源电极和漏电极。 在石墨烯通道层中，多个纳米孔在石墨烯通道层的宽度方向上以单一线排列。