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公开(公告)号：US20200350306A1
公开(公告)日：2020-11-05
申请号：US16933127
申请日：2020-07-20
发明人： Hung-Wen CHO , Fu-Jye LIANG , Chun-Kuang CHEN , Chih-Tsung SHIH , Li-Jui CHEN , Po-Chung CHENG , Chin-Hsiang LIN
摘要： A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer are calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the second portion equals a penumbra size of the exposure manufacturing process, and the penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout. The patterned layer includes a plurality of absorbers, and a first width of the absorbers is the first portion is less than a second width of the absorbers in the second portion the second portion.
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92.发明申请公开(公告)号：US20200348608A1
公开(公告)日：2020-11-05
申请号：US16933872
申请日：2020-07-20
发明人： Yen-Hsun CHEN , Ming-Hsun TSAI , Shao-Hua WANG , Han-Lung CHANG , Li-Jui CHEN , Chia-Chen CHEN
摘要： An extreme ultraviolet radiation source apparatus includes a chamber including at least a droplet generator, a nozzle of the droplet generator, and a dry ice blasting assembly. The droplet generator includes a reservoir for a molten metal, and the nozzle has a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. The dry ice blasting assembly includes a blasting nozzle, a blasting air inlet and a blaster carbon dioxide (CO2) inlet. The blasting nozzle is disposed inside the chamber. The blasting nozzle is arranged to direct a pressurized air stream and dry ice particles at the nozzle of the droplet generator.
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公开(公告)号：US20200348586A1
公开(公告)日：2020-11-05
申请号：US16927131
申请日：2020-07-13
发明人： Hung-Wen CHO , Fu-Jye LIANG , Chun-Kuang CHEN , Chih-Tsung SHIH , Li-Jui CHEN , Po-Chung CHENG , Chin-Hsiang LIN
摘要： A method for collecting information in image-error compensation is provided. The method includes providing a reticle having a first image structure and a second image structure; moving a light shading member to control a first exposure field; projecting a light over the first exposure field; recording an image of the first image structure after the light is projected; moving the light shading member to control a second exposure field; projecting the light over the second exposure field; and recording an image of the second image structure after the light is projected.
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公开(公告)号：US20200348241A1
公开(公告)日：2020-11-05
申请号：US16933067
申请日：2020-07-20
发明人： Chun-Lin Louis CHANG , Shang-Chieh CHIEN , Shang-Ying WU , Li-Kai CHENG , Tzung-Chi FU , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG , Anthony YEN , Chia-Chen CHEN
IPC分类号： G01N21/88 , G03F7/20 , H01L21/027 , G01N21/956 , G01N21/94 , G01N21/954
摘要： A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.
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公开(公告)号：US20200331038A1
公开(公告)日：2020-10-22
申请号：US16388387
申请日：2019-04-18
发明人： Shang-Ying WU , Ming-Hsun TSAI , Sheng-Kang YU , Yung-Teng YU , Chi YANG , Shang-Chieh CHIEN , Chia-Chen CHEN , Li-Jui CHEN , Po-Chung CHENG
摘要： Debris is removed from a collector of an extreme ultraviolet light source vessel by applying a suction force through a vacuum opening of a cable. The method for removing debris also includes weakening debris attachment by using a sticky surface or by spreading a solution through a nozzle, wherein the sticky surface and the nozzle are arranged on the cable proximal to the vacuum opening. A borescope system and interchangeable rigid portions of the cable assists in targeting a target area of the collector where the debris is.
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公开(公告)号：US20200314990A1
公开(公告)日：2020-10-01
申请号：US16365905
申请日：2019-03-27
发明人： Ssu-Yu CHEN , Chi YANG , Che-Chang HSU , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
摘要： A radiation source apparatus includes a vessel, a laser, a collector, a container, and a cone structure. The vessel has an exit aperture. The laser is at one end of the vessel and configured to excite a target material to form a plasma. The collector is in the vessel and configured to collect at least radiation of a desired wavelength emitted by the plasma and to direct the collected radiation to the exit aperture of the vessel. The container is configured to receive a residue of the plasma. The cone structure is between the collector and the exit aperture and located besides the container. The cone structure includes a first inner sidewall, and a second inner sidewall adjoining the first inner sidewall and closer to the container than the first inner sidewall, and a first baffle assembly on the first inner sidewall.
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公开(公告)号：US20200278617A1
公开(公告)日：2020-09-03
申请号：US16876442
申请日：2020-05-18
发明人： Shang-Ying WU , Shang-Chieh CHIEN , Bo-Tsun LIU , Li-Jui CHEN , Po-Chung CHENG
摘要： A method for a lithography exposure process is provided. The method includes irradiating a target droplet with a laser beam to create an extreme ultraviolet (EUV) light. The method further includes reflecting the EUV light with a collector. The method also includes discharging a cleaning gas over the collector through a gas distributor positioned next to the collector. A portion of the cleaning gas is converted to free radicals before the cleaning gas leaves the gas distributor, and the free radicals are discharged over the collector along with the cleaning gas.
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公开(公告)号：US20200166848A1
公开(公告)日：2020-05-28
申请号：US16249046
申请日：2019-01-16
发明人： Ming-Hsun TSAI , Han-Lung CHANG , Yen-Hsun CHEN , Shao-Hua WANG , Li-Jui CHEN , Po-Chung CHENG
IPC分类号： G03F7/20
摘要： A method of operating an extreme ultraviolet (EUV) lithography system includes directing a metallic droplet along a shroud, wherein the shroud has a first opening adjacent a droplet generator and a second opening adjacent an excitation region; partially shielding the second opening of the shroud; and emitting a laser beam encountering the metallic droplet to generate an EUV light.
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公开(公告)号：US20200057181A1
公开(公告)日：2020-02-20
申请号：US16538727
申请日：2019-08-12
发明人： Chi YANG , Sheng-Ta LIN , Jen-Yang CHUNG , Shang-Chieh CHIEN , Li-Jui CHEN , Po-Chung CHENG
摘要： An extreme ultra violet (EUV) radiation source apparatus includes a chamber and the chamber encloses an EUV collector mirror. The EUV collector mirror is configured to collect and direct EUV radiation generated in the chamber and at least three exhaust ports are configured to remove debris from the chamber. In some embodiments, the exhaust ports are symmetrically arranged in a plane perpendicular to an optical axis of the collector mirror. In some embodiments, three exhaust ports are disposed such that an angle between any two adjacent ports is 120 degrees. In some embodiments, four exhaust ports are disposed such that an angle between any two adjacent ports is 90 degrees. In some embodiments, the chamber is configured to maintain a pressure in a range from 0.1 mbar to 10 mbar.
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公开(公告)号：US20200045800A1
公开(公告)日：2020-02-06
申请号：US16149643
申请日：2018-10-02
摘要： An extreme ultraviolet (EUV) lithography system is provided. The EUV lithography system includes the above-mentioned extreme ultraviolet (EUV) radiation source. The EUV lithography system further includes a collector configured to collect and reflect the EUV radiation and a mask stage configured to secure an EUV mask. The EUV lithography system also includes a wafer stage configured to secure a semiconductor wafer. In addition, the EUV lithography system includes one or more optical modules configured to direct the EUV radiation from the radiation source to image an integrated circuit (IC) pattern defined on the EUV mask onto the semiconductor wafer.
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