公开(公告)号：US11040870B2

公开(公告)日：2021-06-22

申请号：US16521907

申请日：2019-07-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Kuei-Sung Chang ,  Chun-Wen Cheng ,  Fei-Lung Lai ,  Shing-Chyang Pan ,  Yuan-Chih Hsieh ,  Yi-Ren Wang

IPC: B81B3/00 ,  B81C1/00

Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a dielectric structure disposed over a first semiconductor substrate, where the dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the dielectric structure. The second semiconductor substrate includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. An anti-stiction structure is disposed between the movable mass and the dielectric structure, where the anti-stiction structure is a first silicon-based semiconductor.

公开(公告)号：US10941034B1

公开(公告)日：2021-03-09

申请号：US16542479

申请日：2019-08-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng ,  Wen Cheng Kuo

IPC: B81C1/00 ,  B81B7/00

Abstract: Various embodiments of the present disclosure are directed towards a microphone including a particle filter disposed between a microelectromechanical systems (MEMS) substrate and a carrier substrate. A MEMS device structure overlies the MEMS substrate. The MEMS device structure includes a diaphragm having opposing sidewalls that define a diaphragm opening. The carrier substrate underlies the MEMS substrate. The carrier substrate has opposing sidewalls that define a carrier substrate opening underlying the diaphragm opening. A filter stack is sandwiched between the carrier substrate and the MEMS substrate. The filter stack includes an upper dielectric layer, a lower dielectric layer, and a particle filter layer disposed between the upper and lower dielectric layers. The particle filter layer includes the particle filter spaced laterally between the opposing sidewalls of the carrier substrate.

公开(公告)号：US20200346925A1

公开(公告)日：2020-11-05

申请号：US16934144

申请日：2020-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

IPC: B81C1/00 ,  H01L23/532 ,  H01L21/82

Abstract: An integrated circuit (IC) with an integrated microelectromechanical systems (MEMS) structure is provided. In some embodiments, the IC comprises a semiconductor substrate, a back-end-of-line (BEOL) interconnect structure, the integrated MEMS structure, and a cavity. The BEOL interconnect structure is over the semiconductor substrate, and comprises wiring layers stacked in a dielectric region. Further, an upper surface of the BEOL interconnect structure is planar or substantially planar. The integrated MEMS structure overlies and directly contacts the upper surface of the BEOL interconnect structure, and comprises an electrode layer. The cavity is under the upper surface of the BEOL interconnect structure, between the MEMS structure and the BEOL interconnect structure.

公开(公告)号：US10823696B2

公开(公告)日：2020-11-03

申请号：US16021077

申请日：2018-06-28

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chun-Wen Cheng ,  Yi-Shao Liu ,  Fei-Lung Lai

IPC: G01N27/414 ,  H01L29/66 ,  H01L23/34 ,  H01L29/78 ,  H01L21/84

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a substrate, a transistor structure, an isolation layer, an interface layer in an opening of the isolation layer, and a metal crown structure over the interface layer. The interface layer and the metal crown structure are disposed on opposite side of the transistor from a gate structure.

公开(公告)号：US20200322733A1

公开(公告)日：2020-10-08

申请号：US16907657

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu ,  Chun Yin Tsai

IPC: H04R19/04 ,  H04R19/00 ,  H04R31/00

Abstract: AMEMS microphone includes a backplate that has a plurality of open areas, and a diaphragm spaced apart from the backplate. The diaphragm is deformable by sound waves to cause gaps between the backplate and the diaphragm being changed at multiple locations on the diaphragm. The diaphragm includes a plurality of anchor areas, located near a boundary of the diaphragm, which is fixed relative to the backplate. The diaphragm also includes multiple vent valves. Examples of the vent valve include a wing vent valve and a vortex vent valve.

公开(公告)号：US20200317506A1

公开(公告)日：2020-10-08

申请号：US16908243

申请日：2020-06-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81B7/00 ,  B81C1/00

Abstract: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

公开(公告)号：US10745271B2

公开(公告)日：2020-08-18

申请号：US16587274

申请日：2019-09-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

IPC: H01L23/532 ,  B81C1/00 ,  H01L21/82

Abstract: An integrated circuit (IC) with an integrated microelectromechanical systems (MEMS) structure is provided. In some embodiments, the IC comprises a semiconductor substrate, a back-end-of-line (BEOL) interconnect structure, the integrated MEMS structure, and a cavity. The BEOL interconnect structure is over the semiconductor substrate, and comprises wiring layers stacked in a dielectric region. Further, an upper surface of the BEOL interconnect structure is planar or substantially planar. The integrated MEMS structure overlies and directly contacts the upper surface of the BEOL interconnect structure, and comprises an electrode layer. The cavity is under the upper surface of the BEOL interconnect structure, between the MEMS structure and the BEOL interconnect structure.

公开(公告)号：US10513429B2

公开(公告)日：2019-12-24

申请号：US15285032

申请日：2016-10-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Wen Cheng ,  Chia-Hua Chu

IPC: B81C1/00

Abstract: Processes for integrating complementary metal-oxide-semiconductor (CMOS) devices with microelectromechanical systems (MEMS) devices are provided. In some embodiments, the MEMS devices are formed on a sacrificial substrate or wafer, the sacrificial substrate or wafer is bonded to a CMOS die or wafer, and the sacrificial substrate or wafer is removed. In other embodiments, the MEMS devices are formed over a sacrificial region of a CMOS die or wafer and the sacrificial region is subsequently removed. Integrated circuit (ICs) resulting from the processes are also provided.

公开(公告)号：US10473616B2

公开(公告)日：2019-11-12

申请号：US15649963

申请日：2017-07-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Shao Liu ,  Chun-Ren Cheng ,  Ching-Ray Chen ,  Yi-Hsien Chang ,  Fei-Lung Lai ,  Chun-Wen Cheng

IPC: G01N27/414 ,  H01L29/66 ,  H01L21/311

Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.

公开(公告)号：US10273144B2

公开(公告)日：2019-04-30

申请号：US15626764

申请日：2017-06-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Chia Liu ,  Chia-Hua Chu ,  Chun-Wen Cheng ,  Kuei-Sung Chang ,  Jung-Huei Peng

IPC: H01L29/82 ,  B81B3/00 ,  B81B7/02

Abstract: The present disclosure relates to a microelectromechanical systems (MEMS) package having two MEMS devices with different pressures, and an associated method of formation. In some embodiments, the (MEMS) package includes a device substrate and a cap substrate bonded together. The device substrate includes a first trench and a second trench. A first MEMS device is disposed over the first trench and a second MEMS device is disposed over the second trench. A first stopper is raised from a first trench bottom surface of the first trench but below a top surface of the device substrate and a second stopper is raised from a second trench bottom surface of the second trench but below the top surface of the device substrate. A first depth of the first trench is greater than a second depth of the second trench.