公开(公告)号：US08254811B2

公开(公告)日：2012-08-28

申请号：US12379505

申请日：2009-02-24

申请人： Toshiyuki Andoh ,  Takashi Hashimoto ,  Takashi Hodoshima ,  Hidetaka Noguchi ,  Seiji Hoshino ,  Tatsuhiko Oikawa ,  Tetsuo Watanabe

发明人： Toshiyuki Andoh ,  Takashi Hashimoto ,  Takashi Hodoshima ,  Hidetaka Noguchi ,  Seiji Hoshino ,  Tatsuhiko Oikawa ,  Tetsuo Watanabe

IPC分类号： G03G15/00 ,  G03G15/08

CPC分类号： G03G15/0131 ,  G03G15/1605 ,  G03G15/161 ,  G03G2215/00738 ,  G03G2215/0154 ,  G03G2215/0158

摘要： An image-carrier driving unit drives an image carrier. An image forming unit forms an image on the image carrier. A moving-member driving unit drives a moving member that is movable towards and away from the image carrier. A detecting unit detects a position of the moving member at predetermined sampling times while the moving member is moving. A movement control unit performs a feedback control on the moving-member driving unit such that a detection result of the detecting unit follows a target value corresponding to each of the predetermined sampling times when the moving member moves while the image forming unit is forming the image on the image carrier.

摘要翻译： 图像载体驱动单元驱动图像载体。 图像形成单元在图像载体上形成图像。 移动构件驱动单元驱动能够朝向和远离图像载体移动的移动构件。 检测单元在移动构件移动时以预定的采样次数检测移动构件的位置。 移动控制单元对移动构件驱动单元执行反馈控制，使得当图像形成单元正在形成图像时，检测单元的检测结果遵循与移动构件移动时的每个预定采样次数相对应的目标值 在图像载体上。

公开(公告)号：US20120132978A1

公开(公告)日：2012-05-31

申请号：US13302184

申请日：2011-11-22

申请人： Koichi TOBA ,  Yasushi Ishi ,  Hiraku Chakihara ,  Kota Funayama ,  Yoshiyuki Kawashima ,  Takashi Hashimoto

发明人： Koichi TOBA ,  Yasushi Ishi ,  Hiraku Chakihara ,  Kota Funayama ,  Yoshiyuki Kawashima ,  Takashi Hashimoto

IPC分类号： H01L29/788 ,  H01L21/28 ,  H01L21/336

CPC分类号： H01L27/11568 ,  H01L21/28282 ,  H01L27/11573 ,  H01L29/42344 ,  H01L29/792

摘要： A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film, and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.

摘要翻译： 提供了具有非易失性存储器的半导体器件，其具有改进的特性。 半导体器件包括控制栅极电极，与控制栅电极相邻设置的存储栅电极，第一绝缘膜和包括电荷存储部分的第二绝缘膜。 在这些部件中，存储栅电极由包括位于第二绝缘膜上的第一硅区的硅膜和位于第一硅区之上的第二硅区构成。 第二硅区域含有p型杂质，第一硅区域的p型杂质浓度低于第二硅区域的p型杂质浓度。

公开(公告)号：US08131173B2

公开(公告)日：2012-03-06

申请号：US12314312

申请日：2008-12-08

申请人： Hidetaka Noguchi ,  Toshiyuki Andoh ,  Takashi Hodoshima ,  Seiji Hoshino ,  Tatsuhiko Oikawa ,  Takashi Hashimoto

发明人： Hidetaka Noguchi ,  Toshiyuki Andoh ,  Takashi Hodoshima ,  Seiji Hoshino ,  Tatsuhiko Oikawa ,  Takashi Hashimoto

IPC分类号： G03G15/20 ,  G03G15/00

CPC分类号： G03G15/2064 ,  G03G15/161 ,  G03G15/5004 ,  G03G2221/1657

摘要： A driving apparatus includes a driving unit, a driven unit driven by the driving unit, a driving control unit configured to control the driving unit by performing feed-forward control based on feed-forward target data determined in advance to reduce a speed change of the driven unit. The speed change of the driven unit is expressed substantially as a positive half cycle of a sinusoidal waveform having an amplitude and a time duration, and the feed-forward target data is calculated from the amplitude and the time duration to represent a rectangular waveform approximating the positive half cycle of the sinusoidal waveform.

摘要翻译： 驱动装置包括：驱动单元，由驱动单元驱动的从动单元;驱动控制单元，被配置为通过基于预先确定的前馈目标数据执行前馈控制来控制驱动单元，以减少驱动单元的速度变化 驱动单元。 驱动单元的速度变化基本上表示为具有振幅和持续时间的正弦波形的正半周期，并且从振幅和持续时间计算前馈目标数据，以表示近似于 正弦波形的正半周期。

公开(公告)号：US08054680B2

公开(公告)日：2011-11-08

申请号：US10852150

申请日：2004-05-25

申请人： Nozomu Matsuzaki ,  Tetsuya Ishimaru ,  Makoto Mizuno ,  Takashi Hashimoto

发明人： Nozomu Matsuzaki ,  Tetsuya Ishimaru ,  Makoto Mizuno ,  Takashi Hashimoto

IPC分类号： G11C11/34 ,  G11C7/00 ,  H01L29/792

CPC分类号： G11C16/107 ,  G11C16/3468

摘要： Memory cells in which an erase and write operation is performed by injecting electrons from a substrate and extracting the electrons into a gate electrode constitute a semiconductor nonvolatile memory device. That is a gate extraction semiconductor nonvolatile memory device. In that device, if an erase bias is applied in a first process of an erase and write operation, memory cells in an overerase condition occur and the charge retention characteristics of such memory cells are degraded. The present invention provides a semiconductor nonvolatile memory device using means for writing all the memory cells in an erase unit before applying the erase bias, and then applying the erase bias.

摘要翻译： 通过从基板注入电子并将电子提取到栅极电极进行擦除和写入操作的存储单元构成半导体非易失性存储器件。 这是一个栅极提取半导体非易失性存储器件。 在该器件中，如果在擦除和写入操作的第一过程中施加擦除偏置，则发生过度过热状态的存储器单元，并且这种存储器单元的电荷保留特性降低。 本发明提供一种半导体非易失性存储器件，其使用在施加擦除偏置之前将所有存储单元写入擦除单元的装置，然后施加擦除偏置。

公开(公告)号：US20110235716A1

公开(公告)日：2011-09-29

申请号：US13121041

申请日：2010-10-07

申请人： Takeshi Tanaka ,  Hiroshi Amano ,  Yoshiteru Hayashi ,  Takashi Hashimoto ,  Satoshi Kajita

发明人： Takeshi Tanaka ,  Hiroshi Amano ,  Yoshiteru Hayashi ,  Takashi Hashimoto ,  Satoshi Kajita

IPC分类号： H04N7/26

CPC分类号： H04N19/433 ,  H04N19/44

摘要： A decoding apparatus (100) includes: a first memory unit (20) storing pixel data of a decoded reference image to be referred to in decoding; a second memory unit (30) having a storage capacity smaller than that of the first memory unit (20) and providing a data reading speed faster than that provided by the first memory unit (20); a search area transfer unit (40) transferring, from the first memory unit (20) to the second memory unit (30), pixel data in a search area that is a part of the reference image and required to calculate a motion vector for the block; a motion vector operating unit (50) calculating the motion vector by repeatedly (i) reading out, from the second memory unit (30), the pixel data and (ii) performing a predetermined operation on the pixel data; and a decoding unit (60) decoding the block using the calculated motion vector.

摘要翻译： 解码装置（100）包括：第一存储单元，存储解码中要参考的解码参考图像的像素数据; 具有比第一存储单元（20）的存储容量小的存储容量的第二存储器单元（30），并且提供比由第一存储器单元（20）提供的数据读取速度更快的数据读取速度; 搜索区域传送单元，从第一存储单元（20）向第二存储单元（30）传送作为参考图像的一部分的搜索区域中的像素数据，并且需要计算用于 块; 运动矢量运算单元，通过重复地（i）从第二存储器单元（30）读出像素数据和（ii）对像素数据执行预定的操作来计算运动矢量; 以及解码单元（60），使用所计算的运动矢量对该块进行解码。

公开(公告)号：US20110135285A1

公开(公告)日：2011-06-09

申请号：US13056762

申请日：2010-05-31

申请人： Takaaki Imanaka ,  Takashi Hashimoto

发明人： Takaaki Imanaka ,  Takashi Hashimoto

IPC分类号： H04N5/917 ,  H04N7/12

CPC分类号： H04N19/00678 ,  H04N19/44 ,  H04N19/51 ,  H04N19/52 ,  H04N19/57 ,  H04N19/583

摘要： An image coding apparatus (5x) includes: a search range control unit (5003a) which sets a search range (8013x) that requires a small amount of data to be transferred; an obtaining unit (5003b) which obtains data of pixels within the search range from an image memory (2002) storing the data; and a predicting unit (2015x) which performs motion estimation.

摘要翻译： 图像编码装置（5x）包括：搜索范围控制部（5003a），其设定要传送少量数据的搜索范围（8013x） 从存储数据的图像存储器（2002）获取搜索范围内的像素的数据的获取单元（5003b） 和执行运动估计的预测单元（2015x）。

公开(公告)号：US07920715B2

公开(公告)日：2011-04-05

申请号：US11700940

申请日：2007-02-01

申请人： Takashi Hashimoto ,  Kurato Maeno

发明人： Takashi Hashimoto ,  Kurato Maeno

IPC分类号： G06K9/00

CPC分类号： H04N1/32144 ,  G06T1/0028 ,  G06T2201/0051 ,  H04N1/32203 ,  H04N1/32235 ,  H04N1/32256

摘要： An electronic watermark embedding apparatus for embedding watermark information as digital information into a document image includes a background eliminating unit that determines whether pixels on an input image are pixels composing a background image and eliminates the pixels determined as the pixels composing the background image from the input image, and a watermark embedding unit that embeds a watermark into a background eliminated image from which the background is eliminated by the background eliminating unit so as to form a watermark image. A readable watermark can be embedded into a multi-valued image including a halftone/gradation portion on the background of the input image.

摘要翻译： 一种用于将水印信息作为数字信息嵌入到文档图像中的电子水印嵌入装置包括背景消除单元，其确定输入图像上的像素是否构成背景图像的像素，并且从输入中排除被确定为构成背景图像的像素的像素 图像和水印嵌入单元，其将背景消除单元消除了背景的背景消除图像中的水印嵌入以形成水印图像。 可读水印可以嵌入到包括输入图像的背景上的半色调/灰度部分的多值图像中。

公开(公告)号：US20100100219A1

公开(公告)日：2010-04-22

申请号：US12523834

申请日：2008-11-14

申请人： Takahiro Ichinomiya ,  Takashi Hashimoto

发明人： Takahiro Ichinomiya ,  Takashi Hashimoto

IPC分类号： G06F17/50

CPC分类号： H01L27/0203 ,  H01L27/118

摘要： A manufacturing system which can restrain the margin of a semiconductor integrated circuit.The integrated circuit 3000 including a fixed circuit unit 3003 and a reconfigurable circuit unit 3004 outputs, to a configuration determining server, an operation time which was calculated by a detecting unit 3001 and a calculating unit 3002. The configuration determining server 3007, by using the operation time obtained from the integrated circuit 3000, calculates performance data which indicates the characteristics of the fixed circuit unit 3003, selects, based on the performance data, a piece of configuration information indicating a circuit configuration that is optimum for the processing of the reconfigurable circuit unit 3004, and outputs the selected piece of configuration information.The integrated circuit 3000 builds a circuit in the reconfigurable circuit unit 3004 in accordance with the output piece of configuration information.

摘要翻译： 能够抑制半导体集成电路的余量的制造系统。 包括固定电路单元3003和可重构电路单元3004的集成电路3000将由检测单元3001和计算单元3002计算出的操作时间输出到配置确定服务器。配置确定服务器3007通过使用 从集成电路3000获得的运算时间，计算表示固定电路单元3003的特性的性能数据，根据性能数据选择表示对于可重构电路的处理最佳的电路配置的一条配置信息 单元3004，并输出所选择的配置信息。 集成电路3000根据输出的配置信息构建可重构电路单元3004中的电路。

公开(公告)号：US20100092752A1

公开(公告)日：2010-04-15

申请号：US12527785

申请日：2008-02-08

申请人： Takashi Hashimoto

发明人： Takashi Hashimoto

IPC分类号： B32B27/00 ,  B29C45/00

CPC分类号： B29C45/372 ,  B01L3/502707 ,  B29C45/0001 ,  B29C2045/0094

摘要： Disclosed is a resin molded body which is good in fillability of the resin and releasability of the molded body, while enabling to form micro recesses and projections having a size from hundreds nm to hundreds μm with high precision. This resin molded body is characterized by comprising a micro three-dimensional shape portion having a width A, a height B and a length C, with A being not less than 5 μm and not more than 100 μm, B/A being not less than 1 and not more than 10 and C/A being not less than 0.5 and not more than 1.5. The resin molded body is also characterized in that it is formed by injection molding using a thermoplastic resin having a flexural modulus of not less than 100 MPa and not more than 1500 MPa.

摘要翻译： 公开了一种树脂成型体，其具有良好的树脂填充性和成型体的脱模性，同时能够以高精度形成尺寸为几百nm至数百μm的微凹部和突起。 该树脂成型体的特征在于，具有宽度A，高度B和长度C的微细三维形状部，A为5μm以上且100μm以下，B / A以上 1且不大于10，C / A不小于0.5且不大于1.5。 树脂成形体的特征还在于，使用挠曲模量为100MPa以上且1500MPa以下的热塑性树脂进行注射成形。

公开(公告)号：US07687850B2

公开(公告)日：2010-03-30

申请号：US11785103

申请日：2007-04-13

申请人： Yasushi Ishii ,  Takashi Hashimoto ,  Koichi Toba ,  Yoshiyuki Kawashima

发明人： Yasushi Ishii ,  Takashi Hashimoto ,  Koichi Toba ,  Yoshiyuki Kawashima

IPC分类号： H01L29/792

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L27/115 ,  H01L29/42344

摘要： This invention is to improve data retention properties of a nonvolatile memory cell having an ONO film. A first cavity is disposed, in a position between the nitride film serving as a charge storage film and a memory gate and below an end portion of the memory gate, adjacent to the upper oxide film. A second cavity is disposed, in a position between the nitride film and a substrate and below an end portion of the memory gate, adjacent to the bottom oxide film. These cavities are closed with sidewall spacers formed over the substrate along the sidewalls of the memory gate.

摘要翻译： 本发明是提高具有ONO膜的非易失性存储单元的数据保持性能。 在作为电荷存储膜的氮化物膜和存储器栅极之间的位置以及存储栅极的端部的下方，与上部氧化物膜相邻的位置设置有第一空腔。 在氮化物膜和衬底之间的位置以及与存储器栅极的端部下方邻近底部氧化膜的第二腔体。 这些空腔被封闭，侧壁隔离物沿着存储器门的侧壁形成在衬底上。