公开(公告)号：US07219416B2

公开(公告)日：2007-05-22

申请号：US10842813

申请日：2004-05-11

申请人： Osamu Inoue ,  Junichi Kato ,  Nobuya Matsutani ,  Hiroshi Fujii ,  Takeshi Takahashi

发明人： Osamu Inoue ,  Junichi Kato ,  Nobuya Matsutani ,  Hiroshi Fujii ,  Takeshi Takahashi

IPC分类号： H01F7/06

CPC分类号： H01F41/127 ,  H01F1/24 ,  H01F1/26 ,  H01F1/28 ,  H01F17/04 ,  H01F27/027 ,  H01F27/292 ,  H01F41/0246 ,  Y10S156/922 ,  Y10T29/49002 ,  Y10T29/4902 ,  Y10T29/49021 ,  Y10T29/49071 ,  Y10T29/49073 ,  Y10T29/49158 ,  Y10T29/49172 ,  Y10T29/49176 ,  Y10T29/4922 ,  Y10T29/49261 ,  Y10T29/49277 ,  Y10T156/1082 ,  Y10T156/11 ,  Y10T428/11 ,  Y10T428/32

摘要： The present invention provides a composite magnetic body containing metallic magnetic powder and thermosetting resin and having a packing ratio of the metallic magnetic powder of 65 vol % to 90 vol % and an electrical resistivity of at least 104 Ω·cm. When a coil is embedded in this composite magnetic body, a miniature magnetic element can be obtained that has a high inductance value and is excellent in DC bias characteristics.

摘要翻译： 本发明提供一种复合磁体，其含有金属磁性粉末和热固性树脂，其金属磁性粉末的填充率为65体积％〜90体积％，电阻率为至少10体积％ 。厘米。 当将该线圈嵌入该复合磁体时，可以得到具有高电感值且DC偏置特性优异的微型磁性元件。

公开(公告)号：US20060006543A1

公开(公告)日：2006-01-12

申请号：US11155272

申请日：2005-06-17

申请人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Kensuke Ishikawa ,  Osamu Inoue ,  Takayuki Oshima

发明人： Hiromi Shimazu ,  Tomio Iwasaki ,  Hiroyuki Ohta ,  Kensuke Ishikawa ,  Osamu Inoue ,  Takayuki Oshima

IPC分类号： H01L23/48

CPC分类号： H01L23/53295 ,  H01L21/76807 ,  H01L21/7682 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A reliable semiconductor device having a multilayer wiring structure formed of copper as a main component material, which constrains occurrence of voids caused by stress migration. In the multilayer wiring structure, a first insulation layer having a high barrier property and a compression stress, and making contact with the upper surface of a first wiring made of copper as a main component material, a second insulation film having a tensile stress, and a third insulation film having a dielectric constant which is lower than those of the first and second insulation film, are laminated one upon another in the mentioned order as viewed the bottom thereof, and a via hole is formed piercing thorough the first insulation film, the second insulation film and the third insulation film, making contact with the first wiring.

摘要翻译： 具有由铜作为主要成分材料形成的多层布线结构的可靠的半导体器件，其限制由应力迁移引起的空隙的发生。 在多层布线结构体中，具有高阻隔性和压缩应力的第一绝缘层，与由铜作为主要成分材料的第一布线的上表面接触，具有拉伸应力的第二绝缘膜，以及 介电常数低于第一绝缘膜和第二绝缘膜的介电常数的第三绝缘膜按照其底部的顺序一个接一个层叠，并且形成穿过第一绝缘膜的通孔， 第二绝缘膜和第三绝缘膜，与第一布线接触。

公开(公告)号：US06355135B1

公开(公告)日：2002-03-12

申请号：US08669840

申请日：1996-06-26

申请人： Osamu Inoue ,  Toshio Kusumi ,  Jun Asano ,  Katsutoshi Yamamoto ,  Osamu Tanaka ,  Shinichi Chaen ,  Nobuki Uraoka

发明人： Osamu Inoue ,  Toshio Kusumi ,  Jun Asano ,  Katsutoshi Yamamoto ,  Osamu Tanaka ,  Shinichi Chaen ,  Nobuki Uraoka

IPC分类号： C09J502

CPC分类号： B32B37/04 ,  B32B38/004 ,  Y10T428/249981

摘要： A method of laminating at least two gas permeable sheet materials includes: (1) providing at least a first gas permeable sheet material, wherein at least a portion of at least a surface region of the first sheet material is thermoplastic material; (2) providing at least a second gas permeable sheet material of polytetrafluoroethylene; (3) superposing the sheet materials; and (4) contacting the sheet materials with a heating means to heat the thermoplastic material to a temperature from 140° to 230° C., so as to melt the thermoplastic material and laminate the sheet materials to one another, without the application of direct pressure in the thickness direction of the sheet materials during the contacting step so as to form a gas permeable laminate.

摘要翻译： 层压至少两种透气性片材的方法包括：（1）提供至少第一透气片材料，其中第一片材材料的至少一个表面区域的至少一部分是热塑性材料; （2）提供聚四氟乙烯的至少第二透气性片材; （3）叠加片材; 和（4）使片材与加热装置接触以将热塑性材料加热至140℃至230℃的温度，以便熔化热塑性材料并将片材彼此层压，而不需要直接 在接触步骤期间片材的厚度方向上的压力以形成透气性层压体。

公开(公告)号：US5791767A

公开(公告)日：1998-08-11

申请号：US417591

申请日：1995-04-07

申请人： Osamu Inoue ,  Kiyotada Nakamura ,  Takashi Mori ,  Tetsuo Kikuchi

发明人： Osamu Inoue ,  Kiyotada Nakamura ,  Takashi Mori ,  Tetsuo Kikuchi

IPC分类号： G03F7/20 ,  F21V23/00

CPC分类号： G03F7/70058 ,  G03F7/70575 ,  H01J61/86

摘要： A semiconductor exposure device having excellent throughput using a mercury lamp as an exposure light source. The mercury lamp is capable of providing an efficient i-ray output, with a small i-ray half width value, allowing correction of chromatic aberration. The semiconductor exposure device is further provided with an illumination optical system for illuminating a target surface and a projection optical system for projecting the image on the target surface. The illumination optical system is provided with the mercury lamp, an optical integrator, an optical system for guiding a flux of light emitted from the mercury lamp to the optical integrator and a condenser lens for converging the light from the optical integrator. The semiconductor exposure device is provided with a power source and an associated control circuit for supplying an electric current to the mercury lamp. The power source is configured to allow the mercury lamp to have an average electric field E satisfying the following relational expression with respect to the lamp input power W.sub.L (W), provided that the value obtained by deducting 11 V from the lamp voltage V.sub.L (V) of the mercury lamp and dividing the difference by the electrode-to-electrode distance d (mm) is the average electric field E (=V.sub.L -11/d) (V/mm): E.sub.p (W.sub.L)-1.0 V/mm.ltoreq.E.ltoreq.E.sub.p (W.sub.L)+1.5 V/mm, wherein E.sub.p (W.sub.L)=a+bW.sub.L ; E.ltoreq.6 V/mm; a and b are constants (a=1.4 V/mm, b=0.71.times.10.sup.-3 V/mm.multidot.W).

摘要翻译： 一种半导体曝光装置，其使用汞灯作为曝光光源具有优异的生产能力。 汞灯能够提供高效的i射线输出，具有小的i射线半值值，允许校正色差。 半导体曝光装置还设置有用于照射目标表面的照明光学系统和用于将图像投影在目标表面上的投影光学系统。 照明光学系统设置有水银灯，光学积分器，用于将从汞灯发射的光束的光束引导到光学积分器的光学系统和用于会聚来自光学积分器的光的聚光透镜。 半导体曝光装置设置有用于向汞灯供应电流的电源和相关联的控制电路。 电源被配置为允许汞灯具有相对于灯输入功率WL（W）满足以下关系式的平均电场E，条件是通过从灯电压VL（V）中减去11V获得的值 ）的平均电场E（= VL-11 / d）（V / mm）：Ep（WL）-1.0V / mm （WL）+1.5V / mm，其中Ep（WL）= a + bWL; E

公开(公告)号：US5712530A

公开(公告)日：1998-01-27

申请号：US564004

申请日：1995-11-29

申请人： Osamu Inoue ,  Toshiyuki Shima

发明人： Osamu Inoue ,  Toshiyuki Shima

IPC分类号： G03F7/20 ,  H01J61/073 ,  H01J61/26 ,  H01J61/36 ,  H01J61/86 ,  H01J61/04

CPC分类号： G03F7/70016 ,  H01J61/0732 ,  H01J61/26 ,  H01J61/86

摘要： A mercury lamp of the short arc type in which tantalum can absorb impurity gases to a sufficient degree even if the inside of the arc tube reaches a high temperature is achieved by providing an arc tube, within which mercury and an inert gas are encapsulated, with a pair of electrodes disposed opposite each other within the arc tube, each of the electrodes being supported by a respective terminal post, tantalum being provided on the terminal post of one of the electrodes, and by ensuring that both of the relationships (D2/D1)>1.3 and the relationship 0.2.ltoreq.(D2/D1).sup.2 /L.ltoreq.0.5 are satisfied at the same time, where D1 is an outer diameter of the terminal post in millimeters, D2 is an outer diameter of the electrode supported by the respective terminal post in millimeters, and L is a distance between a tip of the electrode on which the tantalum is provided and the tantalum on the terminal post of that electrode.

摘要翻译： 即使电弧管的内部达到高温，钽也能够充分吸收杂质气体的短弧型汞灯通过将汞和惰性气体封入其中的电弧管与 一对在电弧管内彼此相对设置的电极，每个电极由相应的端子柱支撑，钽设置在电极之一的端子柱上，并且通过确保两者之间的关系（D2 / D1 ）> 1.3，并且同时满足0.2

公开(公告)号：US5627589A

公开(公告)日：1997-05-06

申请号：US602265

申请日：1996-02-20

申请人： Satoshi Ejima ,  Osamu Inoue

发明人： Satoshi Ejima ,  Osamu Inoue

IPC分类号： G02B7/00 ,  H04N5/225 ,  H04N5/335 ,  H04N5/372

CPC分类号： H04N5/2253

摘要： An imaging apparatus comprising imaging devices for converting the light of a subject into electric signals, an image forming device for forming an image of the light of the subject on the imaging devices and a connecting device for connecting the image forming device to the imaging devices. In the imaging apparatus, the connecting device has at least three pins so inserted in holes bored in either the imaging devices or the image forming device as to be vertically movable and a biasing device for making the pins contact with a confronting surface of the image device or the image forming device. Heads of the pins are formed in configuration adaptive to point-contact with the confronting surface. The hole is bonded to the pin, and the pin is bonded to the confronting surface, respectively.

摘要翻译： 一种成像设备，包括用于将被摄体的光转换成电信号的成像设备，用于在成像设备上形成被摄体的光的图像的图像形成设备以及用于将图像形成设备连接到成像设备的连接设备。 在成像装置中，连接装置具有插入到成像装置或图像形成装置中的任何一个可垂直移动的孔中的至少三个销，以及用于使销与图像装置的相对表面接触的偏压装置 或图像形成装置。 销的头部形成为适应于与相对表面的点接触的配置。 孔结合到销，并且销分别结合到相对表面。

公开(公告)号：US5518642A

公开(公告)日：1996-05-21

申请号：US314546

申请日：1994-09-28

申请人： Osamu Inoue ,  Nobuya Matsutani ,  Koichi Kugimiya ,  Osamu Ishii ,  Yasuyuki Aono

发明人： Osamu Inoue ,  Nobuya Matsutani ,  Koichi Kugimiya ,  Osamu Ishii ,  Yasuyuki Aono

IPC分类号： C04B35/26 ,  C04B35/38

CPC分类号： C04B35/2658

摘要： An oxide magnetic material provided by the present invention contains, as main components, 55 to 59 mol % of Fe.sub.2 O.sub.3 ; 35 to 42 mol % of MnO; and 6 mol % or less of ZnO, and further contains, as sub-components, 0.05 to 0.3 wt % of CaO; and 0.005 to 0.05 wt % of SiO.sub.2. The other oxide magnetic material provided by the present invention contains, as main components, 61 to 67 mol % of Fe.sub.2 O.sub.3 ; 3 to 36 mol % of MnO; and 30 mol % or less of ZnO, and further contains, as sub-components, 0.05 to 0.5 wt % of CaO; and 0.005 to 0.2 wt % of SiO.sub.2. Such materials can further contain one or more kinds of oxides selected from the group consisting of ZrO.sub.2, HfO.sub.2, Ta.sub.2 O.sub.5, Cr.sub.2 O.sub.3, MoO.sub.3, WO.sub.3, Al.sub.2 O.sub.3, Ga.sub.2 O.sub.3, In.sub.2 O.sub.3, GeO.sub.2, SnO.sub.2, Sb.sub.2 O.sub.3 and Bi.sub.2 O.sub.3. Such magnetic materials of the present invention have the advantages of having an extremely low magnetic loss even when used in the high frequency band and having a minimum magnetic loss at a temperature sufficiently higher than room temperature. Moreover, a switching power supply having a switching frequency of 300 kHz to 5 MHz is provided by using such magnetic materials as a magnetic core.

摘要翻译： 本发明提供的氧化物磁性材料含有55〜59摩尔％的Fe 2 O 3作为主要成分; 35〜42mol％的MnO; 和6mol％以下的ZnO，作为副成分，进一步含有0.05〜0.3重量％的CaO; 和0.005〜0.05重量％的SiO 2。 本发明提供的其它氧化物磁性材料以Fe 2 O 3为主要成分为61〜67摩尔％。 3〜36摩尔％的MnO; 和30摩尔％以下的ZnO，作为副成分，进一步含有0.05〜0.5重量％的CaO; 和0.005〜0.2重量％的SiO 2。 这些材料可以进一步含有选自ZrO 2，HfO 2，Ta 2 O 5，Cr 2 O 3，MoO 3，WO 3，Al 2 O 3，Ga 2 O 3，In 2 O 3，GeO 2，SnO 2，Sb 2 O 3和Bi 2 O 3中的一种以上的氧化物。 本发明的这种磁性材料具有即使在高频带下使用也具有非常低的磁损耗并且在足够高于室温的温度下具有最小的磁损耗的优点。 此外，通过使用这种磁性材料作为磁芯，提供具有300kHz至5MHz的开关频率的开关电源。

公开(公告)号：US5443913A

公开(公告)日：1995-08-22

申请号：US136281

申请日：1993-10-15

申请人： Masahide Kohno ,  Kazuhiro Kuroda ,  Yasushi Ishikawa ,  Hideki Sasaki ,  Yasufumi Takasugi ,  Tsunehiko Ikarashi ,  Osamu Inoue

发明人： Masahide Kohno ,  Kazuhiro Kuroda ,  Yasushi Ishikawa ,  Hideki Sasaki ,  Yasufumi Takasugi ,  Tsunehiko Ikarashi ,  Osamu Inoue

IPC分类号： C09D5/23 ,  G11B5/702 ,  G11B5/735 ,  G11B5/00

CPC分类号： G11B5/735 ,  G11B5/7022 ,  G11B5/7023 ,  G11B5/7026 ,  Y10S428/90 ,  Y10T428/31609 ,  Y10T428/31935

摘要： In a magnetic recording medium comprising on a non-magnetic substrate a magnetic layer obtained by dispersing ferromagnetic powder in an electron beam-curable resin followed by electron beam curing or a backcoat layer obtained by curing an electron beam-curable resin with electron beams, a combination of an electron beam-curable vinyl chloride resin having a sulfur-containing polar group and an electron beam-curable urethane resin having a phosphorus-containing polar group is used as the electron beam-curable resin. This results in improvements in dispersibility, surface smoothness, and electromagnetic characteristics, as well as a lowering of error rate in high density digital recording. Storage property is good.

摘要翻译： 在磁性记录介质中，在非磁性基板上形成通过将铁磁性粉末分散在电子束固化性树脂中后来进行电子束固化而获得的磁性层，或通过用电子束固化电子束固化树脂得到的背涂层， 使用具有含硫极性基团的电子束固化性氯乙烯树脂和具有含磷极性基团的电子束固化性聚氨酯树脂的组合作为电子束固化性树脂。 这导致分散性，表面光滑度和电磁特性的改善，以及高密度数字记录中的误差率的降低。 储藏性好。

公开(公告)号：US4918035A

公开(公告)日：1990-04-17

申请号：US373700

申请日：1989-06-30

申请人： Osamu Inoue ,  Syunichiro Kawashima

发明人： Osamu Inoue ,  Syunichiro Kawashima

IPC分类号： C01B13/32 ,  C01F11/00 ,  C01G9/00 ,  C01G33/00 ,  C01G35/00 ,  C01G51/00 ,  C01G53/00

CPC分类号： B82Y30/00 ,  C01B13/32 ,  C01F11/00 ,  C01G33/006 ,  C01G35/006 ,  C01G51/006 ,  C01G53/006 ,  C01G9/006 ,  C04B35/495 ,  C04B35/6264 ,  C04B35/62655 ,  C01P2002/02 ,  C01P2002/34 ,  C01P2002/54 ,  C01P2004/64 ,  C01P2006/12 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3251 ,  C04B2235/3284 ,  C04B2235/441 ,  C04B2235/768

摘要： The present invention provides a process for producing powder of complex perovskite type compounds by using metal alkoxides. In the prior art, methods were known for synthesizing crystalline powder of simple perovskite type compounds such as BaTiO.sub.3. According to the conventional methods, however, when synthesizing a complex perovskite type compound having two atoms of different valences at the B site of perovskite structure by hydrolyzing metal alkoxides, there could be obtained only amorphous powder, and for crystallizing it, heating to a temperature of around 600.degree. to 800.degree. C. was necessary.According to the process of this invention, it is possible to synthesize the crystalline complex perovskite type compounds at a low temperature of around 100.degree. C., which is 500.degree. to 700.degree. C. lower than the temperature required in the conventional methods, by adjusting the amount of water added according to the type of the solvent used and controlling the reaction temperature at a specified level or higher.

摘要翻译： 本发明提供了使用金属醇盐生产复合钙钛矿型化合物的粉末的方法。 在现有技术中，已知用于合成诸如BaTiO 3的简单钙钛矿型化合物的结晶粉末的方法。 然而，根据常规方法，当通过水解金属醇盐合成在钙钛矿结构的B位上具有两个不同价数的原子的复合钙钛矿型化合物时，只能获得无定形粉末，并将其结晶加热到温度 约600〜800℃是必要的。 根据本发明的方法，可以在约100℃的低温下合成低于常规方法所需温度的500℃至700℃的结晶复合钙钛矿型化合物，通过 根据所使用的溶剂的类型调节添加的水量并将反应温度控制在指定的水平以上。

公开(公告)号：US4901179A

公开(公告)日：1990-02-13

申请号：US161408

申请日：1988-02-23

申请人： Mitsuo Satomi ,  Ken Hirota ,  Osamu Inoue

发明人： Mitsuo Satomi ,  Ken Hirota ,  Osamu Inoue

IPC分类号： G11B5/147 ,  G11B5/21

CPC分类号： G11B5/21 ,  G11B5/1475

摘要： Tape contact surface of a magnetic head is made of magnetic substance of multi-layered structure; interface insulation material for said multi layered structure and/or gap spacer material are made of oxides, complex oxides, nitrides and carbides of transition metal elements, IIa group elements of the periodic table and Zn; and accumulation of magnetic material from magnetic tape is prevented and output of magnetic head is stabilized.

摘要翻译： 磁头的磁带接触表面由多层结构的磁性物质制成; 用于所述多层结构和/或间隙间隔材料的界面绝缘材料由过渡金属元素的氧化物，复合氧化物，氮化物和碳化物，周期表的IIa族元素和Zn组成; 并且防止磁性材料从磁带的积聚，并使磁头的输出稳定。