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157 条记录 (耗时 0.036 秒)

    Method of moving a beam spot between information storage layers of an optical disk
    91.
    发明授权
    Method of moving a beam spot between information storage layers of an optical disk 失效
    在光盘的信息存储层之间移动光束点的方法

    公开(公告)号：US07327642B2

    公开(公告)日：2008-02-05

    申请号：US10423796

    申请日：2003-04-25

    申请人： Shinichi Yamada ,  Katsuya Watanabe ,  Yuichi Kuze ,  Kenji Fujiune ,  Kenji Kondo ,  Takashi Kishimoto ,  Takeharu Yamamoto

    发明人： Shinichi Yamada ,  Katsuya Watanabe ,  Yuichi Kuze ,  Kenji Fujiune ,  Kenji Kondo ,  Takashi Kishimoto ,  Takeharu Yamamoto

    IPC分类号： G11B7/095

    CPC分类号： G11B7/13925 ,  G11B7/08511 ,  G11B7/0908 ,  G11B7/0945 ,  G11B7/0956 ,  G11B2007/0013

    摘要： An optical disc drive includes a light source, a lens, a focusing section, a spherical aberration corrector, a focus signal generator, a gain calculator and a processor. The focusing section forms a beam spot in a focusing state on the information storage layer of an optical disc by controlling the position of the lens. The spherical aberration corrector changes a spherical aberration with the beam spot in a focusing state according to a drive value of a driving signal supplied to the spherical aberration corrector. The focus signal generator generates a focus signal representing the focusing state of the beam spot. The gain calculator calculates a loop gain of a focus control system in response to the focus signal. The processor determines the drive value for the spherical aberration corrector by the loop gain.

    摘要翻译： 光盘驱动器包括光源，透镜，聚焦部分，球面像差校正器，聚焦信号发生器，增益计算器和处理器。 聚焦部分通过控制透镜的位置在光盘的信息存储层上形成聚焦状态的光斑。 球面像差校正器根据提供给球面像差校正器的驱动信号的驱动值，将聚焦状态下的束斑改变为球面像差。 聚焦信号发生器产生表示束斑的聚焦状态的聚焦信号。 增益计算器响应于聚焦信号计算聚焦控制系统的环路增益。 处理器通过环路增益确定球面像差校正器的驱动值。

    Searching method, searching device, and recorded medium
    92.
    发明授权
    Searching method, searching device, and recorded medium 有权
    搜索方法，搜索设备和记录介质

    公开(公告)号：US07130487B1

    公开(公告)日：2006-10-31

    申请号：US09868554

    申请日：1999-12-15

    申请人： Taro Imagawa ,  Yoshihiko Matsukawa ,  Kenji Kondo ,  Tsuyoshi Mekata

    发明人： Taro Imagawa ,  Yoshihiko Matsukawa ,  Kenji Kondo ,  Tsuyoshi Mekata

    IPC分类号： G06K9/36

    CPC分类号： G06F17/30985 ,  G06K9/72 ,  G06K2209/01 ,  Y10S707/99934

    摘要： The present invention relates to a retrieval method for searching a first character element string obtained by subjecting a character string to character recognition for a second character element string. The first character element string includes a first character element and the second character element string includes a second character element. A distance relevant to a similarity between the first character element and the second character element is predetermined between the first character element and the second character element. The retrieval method comprises the steps of comparing the distance with a predetermined reference distance, and determining whether the second character element matches the first character element based on a result of the comparison of the distance with the predetermined reference distance.

    摘要翻译： 本发明涉及一种用于搜索通过使字符串对第二字符元素串进行字符识别而获得的第一字符元素字符串的检索方法。 第一字符元素字符串包括第一字符元素，第二字符元素字符串包括第二字符元素。 与第一字符元素和第二字符元素之间的相似度相关的距离在第一字符元素和第二字符元素之间是预定的。 检索方法包括以下步骤：将距离与预定参考距离进行比较，并且基于距离与预定参考距离的比较的结果来确定第二字符元素是否与第一字符元素匹配。

    Personal authentication method and device
    93.
    发明申请
    Personal authentication method and device 有权
    个人身份验证方法和设备

    公开(公告)号：US20060210123A1

    公开(公告)日：2006-09-21

    申请号：US11429570

    申请日：2006-05-05

    申请人： Kenji Kondo ,  Kenya Uomori

    发明人： Kenji Kondo ,  Kenya Uomori

    IPC分类号： G06K9/00

    CPC分类号： G06K9/0061

    摘要： During registration, an iris image taken is frequency-analyzed using a plurality of frequencies f1 to fn to generate features for the respective frequencies f1 to fn. During authentication, frequencies f2 to fn are selected from the frequencies f1 to fn for use in frequency analysis for authentication. An iris image of a person to be authenticated taken is frequency-analyzed using the selected frequencies f2 to fn to generate features for the respective frequencies f2 to fn. The generated features are compared with the features generated for the same frequencies during the registration to perform personal authentication.

    摘要翻译： 在注册期间，使用多个频率f 1至f n对所拍摄的虹膜图像进行频率分析，以产生各个频率f 1至f n的特征。 在认证期间，从用于认证的频率分析中使用的频率f 1至f n选择频率f 2至f n。 使用所选择的频率f 2至f n对被认证的人的虹膜图像进行频率分析，以生成各个频率f 2至f n的特征。 将生成的特征与在注册期间为相同频率生成的特征进行比较以执行个人认证。

    Optical disc apparatus, an optical disc method, and a semiconductor integrated circuit
    94.
    发明申请
    Optical disc apparatus, an optical disc method, and a semiconductor integrated circuit 有权
    光盘装置，光盘方法和半导体集成电路

    公开(公告)号：US20050141363A1

    公开(公告)日：2005-06-30

    申请号：US11006179

    申请日：2004-12-07

    申请人： Takeshi Shimamoto ,  Shin-ichi Yamada ,  Shin-ichi Kadowaki ,  Yuuichi Kuze ,  Kenji Kondo ,  Katsuya Watanabe

    发明人： Takeshi Shimamoto ,  Shin-ichi Yamada ,  Shin-ichi Kadowaki ,  Yuuichi Kuze ,  Kenji Kondo ,  Katsuya Watanabe

    IPC分类号： G11B7/00 ,  G11B7/004 ,  G11B7/085 ,  G11B7/09 ,  G11B7/135

    CPC分类号： G11B7/0945 ,  G11B7/0908 ,  G11B7/13925

    摘要： An optical disc apparatus includes a control section. The control section performs a first search while the tracking control is in the off state. The first search is for searching for a plurality of sets of the focus positions of the light beam and the spherical aberration amounts such that an amplitude of the tracking error signal is greater than a predetermined value. The control section performs a second search while the tracking control is in the on state. The second search is for determining a set of the focus position of the light beam and the spherical aberration amount such that the reproduced signal quality index is substantially optimal, among the plurality of sets of the focus positions of the light beam and the spherical aberration amounts obtained in the first search.

    摘要翻译： 光盘装置包括控制部。 控制部在跟踪控制处于关闭状态时进行第一次搜索。 第一搜索用于搜索光束的多组聚焦位置和球面像差量，使得跟踪误差信号的幅度大于预定值。 当跟踪控制处于接通状态时，控制部执行第二次搜索。 第二搜索用于确定光束的聚焦位置和球面像差量的集合，使得重放信号质量指数基本上是最佳的，在光束的多组聚焦位置和球面像差量之间 在第一次搜索中获得。

    Dry etching process for semiconductor
    96.
    发明授权
    Dry etching process for semiconductor 失效
    半导体干蚀刻工艺

    公开(公告)号：US5871659A

    公开(公告)日：1999-02-16

    申请号：US665545

    申请日：1996-06-18

    申请人： Yoshikazu Sakano ,  Kenji Kondo ,  Hajime Soga ,  Yasuo Ishihara ,  Yoshifumi Okabe

    发明人： Yoshikazu Sakano ,  Kenji Kondo ,  Hajime Soga ,  Yasuo Ishihara ,  Yoshifumi Okabe

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  B44C1/22

    CPC分类号： H01L21/3065

    摘要： A process for dry etching a silicon substrate, in which a mask exposing a region of the surface of the silicon substrate is formed, and the exposed region is dry etched. The dry etching is performed with a gas mixture including chlorine or a chlorine-containing gas, an oxygen-containing gas, and a fluorine-containing gas in which a ratio of a flow rate of oxygen gas to a flow rate of chlorine gas, O.sub.2 /Cl.sub.2, is selected to be from 0.6 to 3. The gas mixture may also contain a fluorine-containing gas and helium. Preferably, the gas mixture excludes carbon-containing gases. The dry etching process allows for an increased etch rate, as well as a high etch selectivity compared to that of SiO.sub.2 gas. The trench formed in the substrate by this process can be made of a larger depth with high reproducibility and good configuration. The sidewall profile angle of the trench is maintained slightly tapered, with a sidewall profile angle of approximately 90 degrees. Also, by mixing HBr gas into the gas mixture, it is possible to better control the formation of the trench. Thus, this process makes it possible to form, in a silicon substrate, a regularly configured and very deep trench with high accuracy and high etch rate.

    摘要翻译： 一种用于干蚀刻硅衬底的方法，其中形成露出硅衬底表面的区域的掩模，并且暴露区域被干蚀刻。 干蚀刻用包括氯或含氯气体，含氧气体和含氟气体的气体混合物进行，其中氧气流量与氯气流量的比例为O 2 / Cl2被选择为0.6至3.气体混合物还可含有含氟气体和氦气。 优选地，气体混合物不包括含碳气体。 与SiO 2气体相比，干蚀刻工艺允许提高蚀刻速率，以及高蚀刻选择性。 通过该工艺在衬底中形成的沟槽可以由更大的深度制成，具有高的再现性和良好的配置。 沟槽的侧壁轮廓角保持略微渐缩，侧壁轮廓角度约为90度。 此外，通过将HBr气体混入气体混合物中，可以更好地控制沟槽的形成。 因此，该方法使得可以在硅衬底中形成具有高精度和高蚀刻速率的规则构造和非常深的沟槽。

    Method of sending an alarm to a network management station when an unusual event occurs in a managed network station
    97.
    发明授权
    Method of sending an alarm to a network management station when an unusual event occurs in a managed network station 失效
    在受管网络站发生异常事件时向网络管理站发送报警的方法

    公开(公告)号：US5648966A

    公开(公告)日：1997-07-15

    申请号：US531947

    申请日：1995-09-21

    申请人： Kenji Kondo ,  Atsushi Kara ,  Akifumi Yonehara

    发明人： Kenji Kondo ,  Atsushi Kara ,  Akifumi Yonehara

    IPC分类号： H04L12/24 ,  H04L12/26

    CPC分类号： H04L43/00 ,  H04L12/2602 ,  H04L41/06 ,  H04L43/0811 ,  H04L43/10

    摘要： A technique is disclosed for sending alarm information to a network management station from at least one of a plurality of network stations wherein an unusual event(s) has occurred. The network stations are located in a wide area network and are managed by the network management station using a control path. An occurrence of an unusual event is detected in the at least one of the plurality of network stations. Following this, alarm information is generated in the network station wherein the unusual event has occurred. The alarm information includes address information for specifying the network station. Subsequently, the alarm information is sent using an alarm path, which is dedicated to transmission of the alarm information, to the network management station.

    摘要翻译： 公开了一种用于从多个网络站中发生异常事件的至少一个网络管理站发送警报信息的技术。 网络站位于广域网中，并由网络管理站使用控制路径进行管理。 在多个网络站中的至少一个网络站中检测出异常事件的发生。 此后，在发生异常事件的网络站中生成报警信息。 报警信息包括用于指定网络站的地址信息。 随后，使用专门用于发送报警信息的报警路径向网络管理站发送报警信息。

    Dry etching process for semiconductor
    99.
    发明授权
    Dry etching process for semiconductor 失效
    半导体干蚀刻工艺

    公开(公告)号：US5423941A

    公开(公告)日：1995-06-13

    申请号：US152896

    申请日：1993-11-17

    申请人： Atsushi Komura ,  Yoshikazu Sakano ,  Kenji Kondo ,  Keiichi Kon ,  Tetsuhiko Sanbei ,  Shoji Miura

    发明人： Atsushi Komura ,  Yoshikazu Sakano ,  Kenji Kondo ,  Keiichi Kon ,  Tetsuhiko Sanbei ,  Shoji Miura

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  C23F1/00

    CPC分类号： H01L21/3065

    摘要： A process for forming deep trenches on a surface of a semiconductor substrate by forming a mask on the surface of the semiconductor, which prescribes the position of the trenches; and then dry etching the semiconductor surface using a gas mixture comprising (1) an etchant, bromine containing, gas which etches the semiconductor surface to form trenches, (2) a cleaning, halogen containing, gas which evaporates the residue formed by the etching; and (3) a reactive gas capable of reacting with material formed during the etching and capable of decreasing the wastage of the mask by the etchant gas.

    摘要翻译： 一种通过在半导体的表面上形成掩模来形成半导体衬底的表面上的深沟槽的方法，其规定了沟槽的位置; 然后使用气体混合物干燥蚀刻半导体表面，所述气体混合物包括（1）蚀刻剂，含溴的气体，蚀刻半导体表面以形成沟槽，（2）清洁，含卤素的气体，其蒸发由蚀刻形成的残余物; 和（3）能够与在蚀刻期间形成的材料反应的反应气体，并且能够通过蚀刻剂气体减少掩模的浪费。