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    Thin film lift-off via combination of epitaxial lift-off and spalling
    91.
    发明授权
    Thin film lift-off via combination of epitaxial lift-off and spalling 有权

    公开(公告)号：US10186629B2

    公开(公告)日：2019-01-22

    申请号：US14910010

    申请日：2014-08-26

    Applicant: The Regents of the University of Michigan

    Inventor： Stephen R. Forrest ,  Kyusang Lee ,  Jeramy D. Zimmerman

    IPC: H01L31/18 ,  H01L21/18

    Abstract: The present disclosure generally relates to thin film liftoff processes for use in making devices such as electronic and optoelectronic devices, e.g., photovoltaic devices. The methods described herein use a combination of epitaxial liftoff and spalling techniques to quickly and precisely control the separation of an epilayer from a growth substrate. Provided herein are growth structures having a sacrificial layer positioned between a growth substrate and a sacrificial layer. Exemplary methods of the present disclosure include forming at least one notch in the sacrificial layer and spalling the growth structure by crack propagation at the at least one notch to separate the epilayer from the growth substrate.

    Thermal surface treatment for reuse of wafers after epitaxial lift off
    97.
    发明授权
    Thermal surface treatment for reuse of wafers after epitaxial lift off 有权
    外延剥离后晶片再热利用的热表面处理

    公开(公告)号：US09548218B2

    公开(公告)日：2017-01-17

    申请号：US14374390

    申请日：2013-02-07

    Applicant: The Regents of the University of Michigan

    Inventor： Kyusang Lee ,  Jeramy Zimmerman ,  Stephen R. Forrest

    IPC: H01L21/324 ,  H01L31/18 ,  H01L21/3065 ,  H01L33/00

    CPC classification number: H01L21/3247 ,  H01L21/3065 ,  H01L21/3245 ,  H01L31/1896 ,  H01L33/007 ,  Y02E10/50

    Abstract: There is disclosed a method of preserving the integrity of a growth substrate in a epitaxial lift-off method, the method comprising providing a structure comprising a growth substrate, one or more protective layers, a sacrificial layer, and at least one epilayer, wherein the sacrificial layer and the one or more protective layers are positioned between the growth substrate and the at least one epilayer; releasing the at least one epilayer by etching the sacrificial layer with an etchant; and heat treating the growth substrate and/or at least one of the protective layers.

    Abstract translation: 公开了一种在外延剥离方法中保持生长衬底的完整性的方法，所述方法包括提供包括生长衬底，一个或多个保护层，牺牲层和至少一个外延层的结构，其中 所述牺牲层和所述一个或多个保护层位于所述生长衬底和所述至少一个外延层之间; 通过用蚀刻剂蚀刻牺牲层来释放至少一个外延层; 以及对生长衬底和/或至少一个保护层进行热处理。

    Phosphorescent organic light emitting diodes with high efficiency and brightness
    100.
    发明授权
    Phosphorescent organic light emitting diodes with high efficiency and brightness 有权
    磷光有机发光二极管，效率高，亮度高

    公开(公告)号：US09184402B2

    公开(公告)日：2015-11-10

    申请号：US14268398

    申请日：2014-05-02

    Applicant: The Regents of the University of Michigan

    Inventor： Stephen R. Forrest ,  Yifan Zhang

    IPC: H01L51/54 ,  H01L51/50

    CPC classification number: H01L51/5016 ,  H01L2251/55

    Abstract: An organic light emitting device including a) an anode; b) a cathode; and c) an emissive layer disposed between the anode and the cathode, the emissive layer comprising an organic host compound and a phosphorescent compound exhibiting a Stokes Shift overlap greater than 0.3 eV. The organic light emitting device may further include a hole transport layer disposed between the emissive layer and the anode; and an electron transport layer disposed between the emissive layer and the cathode. In some embodiments, the phosphorescent compound exhibits a phosphorescent lifetime of less than 10 μs. In some embodiments, the concentration of the phosphorescent compound ranges from 0.5 wt. % to 10 wt. %.

    Abstract translation: 一种有机发光器件，包括：a）阳极; b）阴极; 和c）设置在阳极和阴极之间的发射层，发射层包含有机主体化合物和表现出大于0.3eV的斯托克斯位移重叠的磷光化合物。 有机发光器件还可以包括设置在发光层和阳极之间的空穴传输层; 以及设置在发光层和阴极之间的电子传输层。 在一些实施方案中，磷光化合物表现出小于10μs的磷光寿命。 在一些实施方案中，磷光化合物的浓度范围为0.5wt。 ％〜10重量％ ％。

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