n-Type thiophene semiconductors
    99.
    发明申请
    n-Type thiophene semiconductors 有权
    n型噻吩半导体

    公开(公告)号:US20060124909A1

    公开(公告)日:2006-06-15

    申请号:US11343407

    申请日:2006-01-31

    IPC分类号: H01B1/12

    摘要: The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, α,ω-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.

    摘要翻译: 可以以高产率和纯度直接制备新的氟碳官能化和/或杂环改性的聚噻吩,特别是α,ω-二全氟己基噻吩DFH-6T。 引入噻吩核心的这种修饰提供了增强的热稳定性和挥发性,并且相对于现有技术的未改性组合物提高了电子亲和力。 蒸发膜表现为n型半导体,并且可用于制造具有FET迁移率〜0.01cm 2 / Vs的薄膜晶体管,这是迄今为止报道的n型有机半导体的最高值。