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公开(公告)号：US10005879B2
公开(公告)日：2018-06-26
申请号：US13365673
申请日：2012-02-03
申请人： Subramanian Vaidyanathan , Marcel Kastler , Bertha Tan , Mi Zhou
发明人： Subramanian Vaidyanathan , Marcel Kastler , Bertha Tan , Mi Zhou
CPC分类号： C08G61/126 , C08G2261/124 , C08G2261/1412 , C08G2261/146 , C08G2261/312 , C08G2261/3223 , C08G2261/3229 , C08G2261/3246 , C08G2261/3327 , C08G2261/334 , C08G2261/344 , C08G2261/364 , C08G2261/414 , C08G2261/51 , C08G2261/92 , H01L51/0036 , H01L51/0043 , H01L51/0558
摘要： A method for producing an organic semiconductor device (110) having at least one organic semiconducting material (122) and at least two electrodes (114) adapted to support an electric charge carrier transport through the organic semiconducting material (122) is disclosed. The organic semiconducting material (122) intrinsically has ambipolar semiconducting properties. The method comprises at least one step of generating at least one intermediate layer (120) which at least partially is interposed between the organic semiconducting material (122) and at least one of the electrodes (114) of the organic semiconductor device (110). The intermediate layer (120) comprises at least one thiol compound having the general formula HS—R, wherein R is an organic residue. The thiol compound has an electric dipole moment pointing away from the SH-group of the thiol compound. The electric dipole moment has at least the same magnitude as the electric dipole moment in 4-Phenylthiophenol. By the intermediate layer (120) an ambipolar charge carrier transport between the electrodes (114) is suppressed in favor of a unipolar charge carrier transport.
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公开(公告)号：US09221944B2
公开(公告)日：2015-12-29
申请号：US13140595
申请日：2009-12-16
申请人： Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Silke Koehler , Marcel Kastler
发明人： Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Silke Koehler , Marcel Kastler
CPC分类号： C08F228/06 , C08G61/126 , C08G2261/124 , C08G2261/18 , C08G2261/3223 , C08G2261/3327 , C08G2261/344 , C08G2261/364 , C08G2261/414 , C08G2261/512 , C08G2261/5222 , C08G2261/91 , C08G2261/92 , C08K3/01 , C08K5/0008 , C09K11/06 , C09K2211/1416 , C09K2211/1425 , C09K2211/1458 , C09K2211/1491 , H01L51/0036 , H01L51/0043 , H01L51/0545 , H01L51/0558 , H01L51/42 , Y02E10/549 , Y02P70/521
摘要： Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic π-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.
摘要翻译： 公开了由具有芳族或杂芳族和共轭系统的二苯乙烯共聚物制备的新的半导体材料。 这种具有很少或不进行后沉积热处理的共聚物可以表现出高电荷载流子迁移率和/或良好的电流调制特性。 此外，本发明的聚合物可以具有某些加工优点，例如改进的溶液加工性和低退火温度。
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公开(公告)号：US08466460B2
公开(公告)日：2013-06-18
申请号：US13376296
申请日：2010-05-26
申请人： Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Silke Annika Koehler , Marcel Kastler
发明人： Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Silke Annika Koehler , Marcel Kastler
CPC分类号： H01L51/0036 , C08G61/123 , C08G61/126 , C08G2261/3247 , C08G2261/344 , C08G2261/414 , H01L51/0035 , H01L51/0043 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N—R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 Ra groups; Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; c is from 1 to 6.
摘要翻译： 包含重复单元A和任选的重复单元B的聚合物，其中Z = S，Se，N-R和O; W在每次出现时独立地是任选被1-4个R a基团取代的单环或多环基团; Y在每次出现时独立地为二价C 1-6烷基，二价C 1-6卤代烷基或共价键; c为1〜6。
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公开(公告)号：US20130144065A1
公开(公告)日：2013-06-06
申请号：US13810819
申请日：2011-07-29
申请人： Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Bo Zhu , Johan Sebastian Basuki
发明人： Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Bo Zhu , Johan Sebastian Basuki
IPC分类号： H01L51/00
CPC分类号： H01L51/0071 , C07D495/04 , C07D513/04 , C07D513/14 , C08G61/123 , C08G61/124 , C08G61/126 , C08G2261/124 , C08G2261/226 , C08G2261/228 , C08G2261/3223 , C08G2261/3243 , C08G2261/3246 , C08G2261/3327 , C08G2261/344 , C08G2261/364 , C08G2261/414 , C08G2261/596 , C08G2261/92 , H01L51/0036 , H01L51/0068 , H01L51/0074 , H01L51/0508 , H01L51/0545
摘要： The present invention provides semiconducting compounds, oligomers and polymers of formula wherein A1 and A2 can be the same or different and are S or Se, E is selected from the group consisting of The compounds, oligomers and polymers of formula of formula (1) are suitable for use in electronic devices such as organic field effect transistors.
摘要翻译： 本发明提供了下式的半导体化合物，低聚物和聚合物，其中A1和A2可以相同或不同，为S或Se，E选自由式（1）所示的化合物，低聚物和聚合物分别为 适用于有机场效应晶体管等电子器件。
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公开(公告)号：US20120074410A1
公开(公告)日：2012-03-29
申请号：US13376296
申请日：2010-05-26
申请人： Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Silke Annika Koehler , Marcel Kastler
发明人： Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Silke Annika Koehler , Marcel Kastler
IPC分类号： H01L29/786 , H01B1/12 , C09K11/06 , C08G75/06
CPC分类号： H01L51/0036 , C08G61/123 , C08G61/126 , C08G2261/3247 , C08G2261/344 , C08G2261/414 , H01L51/0035 , H01L51/0043 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： A polymer comprising repeating units A and optionally repeating units B wherein Z=S, Se, N—R and O; W is at each occurrence independently a monocyclic or polycylic moiety optionally substituted with 1-4 Ra groups; Y, at each occurrence, is independently a divalent C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; c is from 1 to 6.
摘要翻译： 包含重复单元A和任选的重复单元B的聚合物，其中Z = S，Se，N-R和O; W在每次出现时独立地是任选被1-4个R a基团取代的单环或多环基团; Y在每次出现时独立地为二价C 1-6烷基，二价C 1-6卤代烷基或共价键; c为1〜6。
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公开(公告)号：US20160075808A1
公开(公告)日：2016-03-17
申请号：US14946190
申请日：2015-11-19
申请人： Ashok Kumar MISHRA , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Silke Koehler , Marcel Kastler
发明人： Ashok Kumar MISHRA , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Silke Koehler , Marcel Kastler
IPC分类号： C08F228/06 , C08K5/00 , H01L51/00 , C08K3/00
CPC分类号： C08F228/06 , C08G61/126 , C08G2261/124 , C08G2261/18 , C08G2261/3223 , C08G2261/3327 , C08G2261/344 , C08G2261/364 , C08G2261/414 , C08G2261/512 , C08G2261/5222 , C08G2261/91 , C08G2261/92 , C08K3/01 , C08K5/0008 , C09K11/06 , C09K2211/1416 , C09K2211/1425 , C09K2211/1458 , C09K2211/1491 , H01L51/0036 , H01L51/0043 , H01L51/0545 , H01L51/0558 , H01L51/42 , Y02E10/549 , Y02P70/521
摘要： Disclosed herein are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic π-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present disclosure can possess certain processing advantages such as improved solution-processability and low annealing temperature.
摘要翻译： 本文公开了由具有芳族或杂芳族和共轭系统的二苯乙烯共聚物制备的新的半导体材料。 这种具有很少或不进行后沉积热处理的共聚物可以表现出高电荷载流子迁移率和/或良好的电流调制特性。 此外，本公开的聚合物可以具有一定的加工优点，例如改进的溶液加工性和低退火温度。
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7.发明授权Semiconductor materials prepared from rylene-(π-acceptor)copolymers 有权由Rylene - （＆amp;受体）共聚物制备的半导体材料公开(公告)号：US09219233B2
公开(公告)日：2015-12-22
申请号：US12865031
申请日：2009-02-05
申请人： Antonio Facchetti , Zhihua Chen , He Yan , Shaofeng Lu , Tobin J. Marks , Yan Zheng , Marcel Kastler , Subramanian Vaidyanathan , Florian Doetz , Silke Annika Koehler
发明人： Antonio Facchetti , Zhihua Chen , He Yan , Shaofeng Lu , Tobin J. Marks , Yan Zheng , Marcel Kastler , Subramanian Vaidyanathan , Florian Doetz , Silke Annika Koehler
IPC分类号： H01L51/46 , H01B1/12 , C08G61/12 , C08G61/10 , H05B33/14 , C09K11/06 , H01L51/00 , H01L51/05
CPC分类号： H01L51/0043 , C08G61/10 , C08G61/12 , C09B5/62 , C09B69/102 , C09B69/105 , C09B69/106 , C09K11/06 , C09K2211/1458 , C09K2211/1483 , H01B1/127 , H01L51/0036 , H01L51/0053 , H01L51/0094 , H01L51/0541 , H01L51/0545 , H05B33/14 , Y02E10/549 , Y02P70/521
摘要： Disclosed are new semiconductor materials prepared from rylene-(π-acceptor) copolymers. Such copolymers can exhibit high n-type carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
摘要翻译： 公开了由二烯 - （＆amp;受体）共聚物制备的新的半导体材料。 这种共聚物可表现出高的n型载流子迁移率和/或良好的电流调制特性。 此外，本教导的聚合物可以具有某些加工优点，例如在环境条件下的溶液加工性和/或良好的稳定性。
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8.发明授权Semiconductor materials based on thienothiophene-2,5-dione oligomers and polymers 有权基于噻吩并噻吩-2,5-二酮低聚物和聚合物的半导体材料公开(公告)号：US08431680B2
公开(公告)日：2013-04-30
申请号：US13454429
申请日：2012-04-24
IPC分类号： C08G75/00
CPC分类号： H01L51/0558 , C08G2261/1412 , C08G2261/3223 , C08G2261/334 , C08G2261/364 , C08G2261/414 , C08G2261/54 , C08G2261/91 , C08G2261/92 , C08G2261/95 , H01L51/0043
摘要： The present invention provides a polymer comprising a unit of formula and an electronic device comprising the polymer as semiconducting material.
摘要翻译： 本发明提供了包含式的单元的聚合物和包含聚合物作为半导体材料的电子器件。
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9.发明申请SEMICONDUCTOR MATERIALS BASED ON THIENOTHIOPHENE-2,5-DIONE OLIGOMERS AND POLYMERS 有权基于噻吩基-2,5-二醇低聚物和聚合物的半导体材料公开(公告)号：US20120296058A1
公开(公告)日：2012-11-22
申请号：US13454429
申请日：2012-04-24
IPC分类号： C08G75/06
CPC分类号： H01L51/0558 , C08G2261/1412 , C08G2261/3223 , C08G2261/334 , C08G2261/364 , C08G2261/414 , C08G2261/54 , C08G2261/91 , C08G2261/92 , C08G2261/95 , H01L51/0043
摘要： The present invention provides a polymer comprising a unit of formula and an electronic device comprising the polymer as semiconducting material.
摘要翻译： 本发明提供了包含式的单元的聚合物和包含聚合物作为半导体材料的电子器件。
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公开(公告)号：US20120217482A1
公开(公告)日：2012-08-30
申请号：US13140595
申请日：2009-12-16
申请人： Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Silke Koehler , Marcel Kastler
发明人： Ashok Kumar Mishra , Subramanian Vaidyanathan , Hiroyoshi Noguchi , Florian Doetz , Silke Koehler , Marcel Kastler
CPC分类号： C08F228/06 , C08G61/126 , C08G2261/124 , C08G2261/18 , C08G2261/3223 , C08G2261/3327 , C08G2261/344 , C08G2261/364 , C08G2261/414 , C08G2261/512 , C08G2261/5222 , C08G2261/91 , C08G2261/92 , C08K3/01 , C08K5/0008 , C09K11/06 , C09K2211/1416 , C09K2211/1425 , C09K2211/1458 , C09K2211/1491 , H01L51/0036 , H01L51/0043 , H01L51/0545 , H01L51/0558 , H01L51/42 , Y02E10/549 , Y02P70/521
摘要： Disclosed are new semiconductor materials prepared from dithienylvinylene copolymers with aromatic or heteroaromatic π-conjugated systems. Such copolymers, with little or no post-deposition heat treatment, can exhibit high charge carrier mobility and/or good current modulation characteristics. In addition, the polymers of the present teachings can possess certain processing advantages such as improved solution-processability and low annealing temperature.
摘要翻译： 公开了由具有芳族或杂芳族和共轭系统的二苯乙烯共聚物制备的新的半导体材料。 这种具有很少或不进行后沉积热处理的共聚物可以表现出高电荷载流子迁移率和/或良好的电流调制特性。 此外，本发明的聚合物可以具有某些加工优点，例如改进的溶液加工性和低退火温度。
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