MICRO ASSEMBLED LED DISPLAYS AND LIGHTING ELEMENTS

    公开(公告)号:US20150371974A1

    公开(公告)日:2015-12-24

    申请号:US14743967

    申请日:2015-06-18

    Abstract: The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 μm to 50 μm), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.

    Micro-transfer-printable flip-chip structures and methods

    公开(公告)号:US10600671B2

    公开(公告)日:2020-03-24

    申请号:US16502350

    申请日:2019-07-03

    Abstract: In certain embodiments, a method of making a semiconductor structure suitable for transfer printing (e.g., micro-transfer printing) includes providing a support substrate and disposing and processing one or more semiconductor layers on the support substrate to make a completed semiconductor device. A patterned release layer and, optionally, a capping layer are disposed on or over the completed semiconductor device and the patterned release layer or capping layer, if present, are bonded to a handle substrate with a bonding layer. The support substrate is removed to expose the completed semiconductor device and, in some embodiments, a portion of the patterned release layer. In some embodiments, an entry path is formed to expose a portion of the patterned release layer. In some embodiments, the release layer is etched and the completed semiconductor devices transfer printed (e.g., micro-transfer printed) from the handle substrate to a destination substrate.

    MICRO-TRANSFER-PRINTABLE FLIP-CHIP STRUCTURES AND METHODS

    公开(公告)号:US20190385886A1

    公开(公告)日:2019-12-19

    申请号:US16544737

    申请日:2019-08-19

    Abstract: In certain embodiments, a method of making a semiconductor structure suitable for transfer printing (e.g., micro-transfer printing) includes providing a support substrate and disposing and processing one or more semiconductor layers on the support substrate to make a completed semiconductor device. A patterned release layer and, optionally, a capping layer are disposed on or over the completed semiconductor device and the patterned release layer or capping layer, if present, are bonded to a handle substrate with a bonding layer. The support substrate is removed to expose the completed semiconductor device and, in some embodiments, a portion of the patterned release layer. In some embodiments, an entry path is formed to expose a portion of the patterned release layer. In some embodiments, the release layer is etched and the completed semiconductor devices transfer printed (e.g., micro-transfer printed) from the handle substrate to a destination substrate.

    Voltage-balanced serial iLED pixel and display

    公开(公告)号:US10453826B2

    公开(公告)日:2019-10-22

    申请号:US15610297

    申请日:2017-05-31

    Abstract: A multi-color inorganic light-emitting diode (iLED) display includes a display substrate with a common voltage signal and a common ground signal and a plurality of multi-color pixels. In certain embodiments, each multi-color pixel includes a first color sub-pixel including two or more first iLEDs, a second color sub-pixel including one or more second iLEDs, and a third color sub-pixel including one or more third iLEDs. The two or more first iLEDs are serially connected between the common voltage signal and the common ground signal, the one or more second iLEDs are serially connected between the common voltage signal and the common ground signal, and the one or more third iLEDs are serially connected between the common voltage signal and the common ground signal.

    Redistribution layer for substrate contacts

    公开(公告)号:US10381430B2

    公开(公告)日:2019-08-13

    申请号:US15864898

    申请日:2018-01-08

    Abstract: A structure with an interconnection layer for redistribution of electrical connections includes a plurality of first electrical connections disposed on a substrate in a first arrangement. An insulating layer is disposed on the substrate over the first electrical connections. A plurality of second electrical connections is disposed on the insulating layer on a side of the insulating layer opposite the plurality of first electrical connections in a second arrangement. Each second electrical connection is electrically connected to a respective first electrical connection. An integrated circuit is disposed on the substrate and is electrically connected to the first electrical connections. The first electrical connections in the first arrangement have a greater spatial density than the second electrical connections in the second arrangement.

    DEVICE SOURCE WAFERS WITH PATTERNED DISSOCIATION INTERFACES

    公开(公告)号:US20190229231A1

    公开(公告)日:2019-07-25

    申请号:US16209380

    申请日:2018-12-04

    Abstract: A transfer-printable (e.g., micro-transfer-printable) device source wafer comprises a growth substrate comprising a growth material, a plurality of device structures comprising one or more device materials different from the growth material, the device structures disposed on and laterally spaced apart over the growth substrate, each device structure comprising a device, and a patterned dissociation interface disposed between each device structure of the plurality of device structures and the growth substrate. The growth material is more transparent to a desired frequency of electromagnetic radiation than at least one of the one or more device materials. The patterned dissociation interface has one or more areas of relatively greater adhesion each defining an anchor between the growth substrate and a device structure of the plurality of device structures and one or more dissociated areas of relatively lesser adhesion between the growth substrate and the device structure of the plurality of device structures.

    Systems and methods for controlling release of transferable semiconductor structures

    公开(公告)号:US10361124B2

    公开(公告)日:2019-07-23

    申请号:US15893376

    申请日:2018-02-09

    Abstract: The disclosed technology relates generally to methods and systems for controlling the release of micro devices. Prior to transferring micro devices to a destination substrate, a native substrate is formed with micro devices thereon. The micro devices can be distributed over the native substrate and spatially separated from each other by an anchor structure. The anchors are physically connected/secured to the native substrate. Tethers physically secure each micro device to one or more anchors, thereby suspending the micro device above the native substrate. In certain embodiments, single tether designs are used to control the relaxation of built-in stress in releasable structures on a substrate, such as Si (1 0 0). Single tether designs offer, among other things, the added benefit of easier break upon retrieval from native substrate in micro assembly processes. In certain embodiments, narrow tether designs are used to avoid pinning of the undercut etch front.

    Multi-resolution compound micro-devices

    公开(公告)号:US10297585B1

    公开(公告)日:2019-05-21

    申请号:US15850049

    申请日:2017-12-21

    Abstract: A compound micro-assembled device comprises a device substrate. A first component having a first native resolution and a second component having a second native resolution different from the first native resolution are both disposed on the device substrate. The device substrate can comprise a device circuit having a native resolution different from or less than the first and second native resolutions. One or more device interconnections electrically connect the first component to the second component or to the device circuit. In certain embodiments, the first component or the second component can be micro-transfer printed onto the device substrate. In certain embodiments, the compound micro-assembled device can be micro-transfer printed onto a destination substrate or the compound micro-assembled device can comprise a destination substrate onto which the device substrate is micro-transfer printed. At least one of the first component and second components and, optionally, the device substrate, comprises at least a portion of a tether.

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