Method for driving a non-volatile semiconductor memory
    92.
    发明授权
    Method for driving a non-volatile semiconductor memory 失效
    用于驱动非易失性半导体存储器的方法

    公开(公告)号:US5715196A

    公开(公告)日:1998-02-03

    申请号:US684178

    申请日:1996-07-19

    摘要: An array of non-volatile memory cells arranged in rows and columns is provided. Each memory cell is composed of a transistor made up of a gate, a source, and drain and a capacitance section. Each memory cell is connected to a row decoder through a wordline, to a column decoder through a bitline, and to a source decoder through a sourceline. Arranged in a path extending from a bitline to a sourceline through a transistor is an anisotropic resistance section, e.g., a diode, exhibiting different voltage-current characteristics for different levels of voltages applied thereacross. Because of such arrangement, leakage current occurring to a deselected memory cell in a reading operation can be reduced or can be eliminated. Read errors due to leakage current can be avoided and the power consumption can be reduced.

    摘要翻译: 提供了排列成行和列的非易失性存储单元阵列。 每个存储单元由由栅极,源极和漏极以及电容部分构成的晶体管构成。 每个存储单元通过字线连接到行解码器,通过位线连接到列解码器,并通过源线连接到源解码器。 在从位线延伸到源极线通过晶体管的路径中布置的是各向异性电阻部分,例如二极管,对于施加在其上的不同电压电平,具有不同的电压 - 电流特性。 由于这样的布置,可以减少或可以消除在读取操作中对取消选择的存储单元发生的泄漏电流。 可以避免由于泄漏电流而导致的读取错误,并且可以降低功耗。

    Non-volatile semiconductor memory having an array of non-volatile memory
cells and method for driving the same
    93.
    发明授权
    Non-volatile semiconductor memory having an array of non-volatile memory cells and method for driving the same 失效
    具有非易失性存储单元阵列的非易失性半导体存储器及其驱动方法

    公开(公告)号:US5627779A

    公开(公告)日:1997-05-06

    申请号:US505638

    申请日:1995-07-21

    摘要: An array of non-volatile memory cells arranged in rows and columns is provided. Each memory cell is composed of a transistor made up of a gate, a source, and drain and a capacitance section. Each memory cell is connected to a row decoder through a wordline, to a column decoder through a bitline, and to a source decoder through a sourceline. Arranged in a path extending from a bitline to a sourceline through a transistor is an anisotropic resistance section, e.g., a diode, exhibiting different voltage-current characteristics for different levels of voltages applied thereacross. Because of such arrangement, leakage current occurring to a deselected memory cell in a reading operation can be reduced or can be eliminated. Read errors due to leakage current can be avoided and the power consumption can be reduced.

    摘要翻译: 提供了排列成行和列的非易失性存储单元阵列。 每个存储单元由由栅极,源极和漏极以及电容部分构成的晶体管构成。 每个存储单元通过字线连接到行解码器,通过位线连接到列解码器,并通过源线连接到源解码器。 在从位线延伸到源极线通过晶体管的路径中布置的是各向异性电阻部分,例如二极管,对于施加在其上的不同电压电平,具有不同的电压 - 电流特性。 由于这样的布置,可以减少或可以消除在读取操作中对取消选择的存储单元发生的泄漏电流。 可以避免由于泄漏电流而导致的读取错误,并且可以降低功耗。

    Semiconductor device and method of manufacturing the same
    94.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号:US5459341A

    公开(公告)日:1995-10-17

    申请号:US195165

    申请日:1994-02-14

    CPC分类号: H01L27/10852 H01L27/10808

    摘要: A surface region of a P-type semiconductor substrate is defined by an isolation into plural active regions at which a semiconductor element is to be formed. A first diffusion region such as a drain region, a second diffusion region such as a source region, and a wiring member such as a word line are arranged at each active region. The surface of the word line is covered with a first insulating layer. A second insulating layer is provided, in which a region including in common each overhead region on at least two second diffusion regions is removed, leaving an overhead region on the first diffusion region. Provided above the second diffusion region is a conductive member such as a capacity storage electrode, a bit line. A contact member which connects the conductive member and the second diffusion region is formed at a region where the second insulating layer is removed. With the second insulating layer of such configuration, an increase in connection resistance and a connection defect of the capacity storage electrode contact or the bit line contact are prevented.

    摘要翻译: P型半导体衬底的表面区域通过隔离形成半导体元件的多个有源区域来限定。 在每个有源区域上布置有诸如漏极区域的第一扩散区域,诸如源极区域的第二扩散区域和诸如字线的布线构件。 字线的表面被第一绝缘层覆盖。 提供了第二绝缘层,其中除去在至少两个第二扩散区域上共同的每个塔顶区域的区域,在第一扩散区域上留下顶部区域。 设置在第二扩散区域之上的是诸如容量存储电极,位线的导电构件。 连接导电部件和第二扩散区域的接触部件形成在除去第二绝缘层的区域。 通过这种结构的第二绝缘层,防止了电容存储电极接触或位线接触的连接电阻的增加和连接缺陷。

    Liquid injection recording system, a liquid injection head, a base plate
for the recording head, and a recording apparatus having the liquid
injection recording head
    96.
    发明授权
    Liquid injection recording system, a liquid injection head, a base plate for the recording head, and a recording apparatus having the liquid injection recording head 失效
    液体注射记录系统,液体注入头,用于记录头的底板,以及具有液体注射记录头的记录装置

    公开(公告)号:US4831391A

    公开(公告)日:1989-05-16

    申请号:US236290

    申请日:1988-08-25

    申请人: Akira Asai

    发明人: Akira Asai

    IPC分类号: B41J2/05 B41J2/14 B41J2/205

    摘要: In a liquid injection recording system wherein an electrical signal is input to an electro-thermal conversion element to cause it to generate heat and produce bubbles in liquid and the liquid is injected by the action of the bubbles, a substance whose electrical resistance is varied by phase transition is used for a portion of the electro-thermal conversion element and harmonious recording is effected by the utilization of the phase transition characteristic of the substance.

    摘要翻译: 在液体注射记录系统中,其中电信号被输入到电热转换元件以使其产生热量并在液体中产生气泡,并且通过气泡的作用注入液体,将电阻改变为 相转变用于电热转换元件的一部分,并且通过利用物质的相变特性来实现和谐记录。

    Heat generating resistor, recording head using such resistor and drive
method therefor
    97.
    发明授权
    Heat generating resistor, recording head using such resistor and drive method therefor 失效
    发热电阻,使用这种电阻的记录头及其驱动方法

    公开(公告)号:US4719478A

    公开(公告)日:1988-01-12

    申请号:US910727

    申请日:1986-09-23

    IPC分类号: B41J2/14 G01D15/16

    摘要: A planar heat generating resistor has a heat generating resistor layer formed on or above a support member and a pair of opposing electrodes formed on the heat generating resistor layer, such that a width of the heat generating layer at the electrode area is larger than a width of the electrodes and a voltage is applied across the electrodes, in which a ratio of a maximum value of a gradient of .phi., .sqroot.(.differential..phi./.differential.x).sup.2 +(.differential..phi./.differential.y).sup.2 to a value of .sqroot.(.differential..phi./.differential.x).sup.2 +(.differential..phi./.differential.y).sup.2 at a center of the resistor is no larger than 1.4 when a Laplace equation .differential..sup.2 /.differential.x.sup.2 +.differential..sup.2 .phi./.differential.y.sup.2 =0 is solved for the heat generating resistor when an orthogonal coordinate system X-Y is defined on the resistor surface, a potential at a point (x,y) on the resistor surface is represented by .phi.(x,y), a boundary value is imparted to an area of a circumferential boundary of the resistor which contacts to one of the electrodes, a different boundary value is imparted to an area which contacts to the other electrode, and a boundary condition in which a differential coefficient of .phi. to a normal direction of the circumferential boundary is zero is imparted to an area which does not contact to any of the electrodes.

    摘要翻译: 平面发热电阻器具有形成在支撑构件上或上方的发热电阻层和形成在发热电阻层上的一对相对电极,使得电极区域处的发热层的宽度大于宽度 的电极上施加电压,其中phi,2ROOT(DIFFERENTIAL phi / DIFFERENTIAL x)2(DIFFERENTIAL phi / DIFFERENTIAL y)2的梯度的最大值与2ROOT值的比值 当求解拉普拉斯方程差分2 /差分x2 +差分2比特/差分y2 = 0时,电阻中心处的差分phi /差分x)2+(差分phi /差分y)2不大于1.4 电阻器,当电阻表面上定义正交坐标系XY时,电阻表面上的点(x,y)处的电位由phi(x,y)表示,边界值被赋予圆周边界的区域 与电极之一接触的电阻器,赋予与另一个电极接触的区域不同的边界值,并且赋予与周向边界的法线方向的微分系数为零的边界条件 到不与任何电极接触的区域。

    Typewriter
    98.
    发明授权
    Typewriter 失效
    打字机

    公开(公告)号:US4283150A

    公开(公告)日:1981-08-11

    申请号:US38845

    申请日:1979-05-14

    CPC分类号: B41J7/30 B41J7/96

    摘要: An electric typewriter having a prevention mechanism for preventing printing errors caused by a depression of a few keys in very rapid succession. The prevention mechanism includes a lock member for locking a clutch, which is interposed between a drive motor and a printing mechanism, in a disengaged condition. The lock member is normally held in a non-operational position for allowing the clutch to be engaged, and is moved in response to a special operation of a sensing member to an operational position for keeping the clutch in a disengaged condition. The sensing member is so disposed as to be moved in a distinct way different from the normal operation mode when a few keys have been depressed in very rapid succession.

    摘要翻译: 一种具有预防机构的电动打字机,其用于防止因非常快速的连续按压几个按键引起的打印错误。 防止机构包括用于锁定离合器的锁定构件,该离合器介于驱动马达和打印机构之间,处于脱离状态。 锁定构件通常保持在非操作位置以允许离合器接合,并且响应于感测构件的特殊操作而移动到用于将离合器保持在脱离状态的操作位置。 感测构件被布置成当以非常快速的连续按压几个键时以与正常操作模式不同的不同方式移动。

    Single element print head
    99.
    发明授权
    Single element print head 失效
    单元打印头

    公开(公告)号:US4234262A

    公开(公告)日:1980-11-18

    申请号:US26676

    申请日:1979-04-03

    IPC分类号: B41J1/60

    CPC分类号: B41J1/60 Y10T403/604

    摘要: A single element print head having an apparatus for firmly and releasably attaching itself to the drive shaft of a typewriter. The body of the print head is provided with a central opening therethrough for receipt of the drive shaft. A cap is secured on the body around one end of the opening with the purpose of slidably holding a manual slide member in its guide recess and fixedly holding a base portion of a hair pin shaped spring in its holding groove. The spring has a pair of arms for firmly fastening therebetween, and for releasing the drive shaft by virtue of its resilience and the action of a pair of cam surfaces. The pair of cam surfaces are formed in the bottom portion of the slide member, diverging from one end to the other end like a front portion of a bullet, for expanding the arms from each other to release the arms from the drive shaft by means of the slide movement of the slide member.

    摘要翻译: 单元件打印头具有用于牢固且可释放地将自身附接到打字机的驱动轴上的装置。 打印头的主体设置有穿过其的中心开口,用于接收驱动轴。 盖子围绕开口的一端被固定在主体上,目的是在其引导凹槽中可滑动地保持手动滑动构件,并将发夹形弹簧的基部固定地保持在其保持槽中。 弹簧具有用于牢固地紧固在其间的一对臂,并且由于其弹性和一对凸轮表面的作用来释放驱动轴。 一对凸轮表面形成在滑动构件的底部,如同子弹的前部从一端向另一端分叉,用于使臂互相扩张,以使臂从驱动轴通过 滑动构件的滑动运动。

    Semiconductor devices and method for manufacturing the same
    100.
    发明授权
    Semiconductor devices and method for manufacturing the same 失效
    半导体器件及其制造方法

    公开(公告)号:US07244972B2

    公开(公告)日:2007-07-17

    申请号:US10868774

    申请日:2004-06-17

    IPC分类号: H01L29/778

    摘要: In a field effect transistor, an Si layer 11, an SiC (Si1−yCy) channel layer 12, a CN gate insulating film 13 made of a carbon nitride layer (CN) and a gate electrode 14 are deposited in this order on an Si substrate 10. The thickness of the SiC channel layer 12 is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region 15 and a drain region 16 are formed on opposite sides of the SiC channel layer 12, and a source electrode 17 and a drain electrode 18 are provided on the source region 15 and the drain region 16, respectively.

    摘要翻译: 在场效应晶体管中,Si层11,SiC(Si 1-y C y)沟道层12,由氮化碳制成的CN栅极绝缘膜13 层(CN)和栅电极14依次沉积在Si衬底10上。 将SiC沟道层12的厚度设定为小于或等于临界厚度的值,使得根据碳含量不会发生由于应变引起的位错。 源极区域15和漏极区域16形成在SiC沟道层12的相对侧上,源极电极17和漏极电极18分别设置在源极区域15和漏极区域16上。