公开(公告)号：US07741199B2

公开(公告)日：2010-06-22

申请号：US12040476

申请日：2008-02-29

申请人： Yuichiro Sasaki ,  Bunji Mizuno ,  Cheng-Guo Jin

发明人： Yuichiro Sasaki ,  Bunji Mizuno ,  Cheng-Guo Jin

IPC分类号： H01L21/265

CPC分类号： H01L21/26506 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/2254 ,  Y10T117/10

摘要： A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

公开(公告)号：US07700382B2

公开(公告)日：2010-04-20

申请号：US10572144

申请日：2004-09-22

申请人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno

发明人： Cheng-Guo Jin ,  Yuichiro Sasaki ,  Bunji Mizuno

IPC分类号： H01L21/26 ,  G01R31/26

CPC分类号： H01L21/2236 ,  H01L21/26513 ,  H01L21/268 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

摘要： A subject of the present invention is to realize an impurity doping not to bring about a rise of a substrate temperature.Another subject of the present invention is to measure optically physical properties of a lattice defect generated by the impurity doping step to control such that subsequent steps are optimized.An impurity doping method, includes a step of doping an impurity into a surface of a solid state base body, a step of measuring an optical characteristic of an area into which the impurity is doped, a step of selecting annealing conditions based on a measurement result to meet the optical characteristic of the area into which the impurity is doped, and a step of annealing the area into which the impurity is doped, based on the selected annealing conditions.

摘要翻译： 本发明的目的是实现杂质掺杂不会引起衬底温度的升高。 本发明的另一主题是测量由杂质掺杂步骤产生的晶格缺陷的光学物理性能，以便控制以使后续步骤被优化。 杂质掺杂方法包括将杂质掺杂到固态基体的表面的步骤，测量掺杂杂质的区域的光学特性的步骤，基于测量结果选择退火条件的步骤 以满足掺杂杂质的区域的光学特性，以及基于所选择的退火条件对杂质掺杂的区域进行退火的步骤。

公开(公告)号：US20080166861A1

公开(公告)日：2008-07-10

申请号：US12057117

申请日：2008-03-27

申请人： Bunji Mizuno ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

发明人： Bunji Mizuno ,  Ichiro Nakayama ,  Yuichiro Sasaki ,  Tomohiro Okumura ,  Cheng-Guo Jin ,  Hiroyuki Ito

IPC分类号： H01L21/26

CPC分类号： H01L21/67167 ,  H01J37/32412 ,  H01L21/2236

摘要： It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

摘要翻译： 当将待引入固体样品的杂质相互混合并且以高精度实现等离子体掺杂时，本发明的目的是防止最初预期的功能不被阻止。 为了区分可能与不混合的杂质混合的杂质，首先首先区分芯的杂质引入机理。 为了避免非常少量的杂质的混合，专门使用用于输送待处理的半导体衬底的机构和用于去除在半导体衬底上形成的树脂材料的机构。

公开(公告)号：US20080160728A1

公开(公告)日：2008-07-03

申请号：US12040476

申请日：2008-02-29

申请人： Yuichiro SASAKI ,  Bunji Mizuno ,  Cheng-Guo Jin

发明人： Yuichiro SASAKI ,  Bunji Mizuno ,  Cheng-Guo Jin

IPC分类号： H01L21/265

CPC分类号： H01L21/26506 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/2254 ,  Y10T117/10

摘要： A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

摘要翻译： 用于引入杂质的方法包括在半导体衬底的表面形成非晶层的步骤，以及在半导体衬底上形成非晶化的浅杂质引入层的步骤以及因此使用的装置。 特别地，用于形成非晶层的步骤是用于将等离子体照射到半导体衬底的表面的步骤，并且用于形成浅掺杂杂质的层的步骤是将杂质引入已经被制成无定形的表面的步骤。

公开(公告)号：US07365346B2

公开(公告)日：2008-04-29

申请号：US11023467

申请日：2004-12-29

申请人： Yuichiro Sasaki ,  Bunji Mizuno

发明人： Yuichiro Sasaki ,  Bunji Mizuno

IPC分类号： H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/08 ,  H01J37/304 ,  H01J2237/024 ,  H01J2237/0455 ,  H01J2237/0653 ,  H01J2237/08 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/31703

摘要： An ion-implanting apparatus and method can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured with a beam current measuring device.

摘要翻译： 离子注入装置和方法可以随时间动态地控制束电流值，并且不改变能量。 该离子注入装置通过对用束电流测量装置测量的束电流值进行反馈来控制束电流值随时间的动态变化。

公开(公告)号：US20070254460A1

公开(公告)日：2007-11-01

申请号：US11819567

申请日：2007-06-28

申请人： Yuichiro Sasaki ,  Bunji Mizuno ,  Cheng-Guo Jin

发明人： Yuichiro Sasaki ,  Bunji Mizuno ,  Cheng-Guo Jin

IPC分类号： H01L21/00

CPC分类号： H01L21/26506 ,  H01L21/223 ,  H01L21/2236 ,  H01L21/2254 ,  Y10T117/10

摘要： A method for introducing impurities includes a step for forming an amorphous layer at a surface of a semiconductor substrate, and a step for forming a shallow impurity-introducing layer at the semiconductor substrate which has been made amorphous, and an apparatus used therefore. Particularly, the step for forming the amorphous layer is a step for irradiating plasma to the surface of the semiconductor substrate, and the step for forming the shallow impurity-introducing layer is a step for introducing impurities into the surface which has been made amorphous.

摘要翻译： 用于引入杂质的方法包括在半导体衬底的表面形成非晶层的步骤，以及在半导体衬底上形成非晶化的浅杂质引入层的步骤以及因此使用的装置。 特别地，用于形成非晶层的步骤是用于将等离子体照射到半导体衬底的表面的步骤，并且用于形成浅掺杂杂质的层的步骤是将杂质引入已经被制成无定形的表面的步骤。

公开(公告)号：US07199064B2

公开(公告)日：2007-04-03

申请号：US10935312

申请日：2004-09-08

申请人： Tomohiro Okumura ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Bunji Mizuno ,  Yuichiro Sasaki

发明人： Tomohiro Okumura ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Bunji Mizuno ,  Yuichiro Sasaki

IPC分类号： H01L21/324 ,  H01L21/477 ,  H01L21/42 ,  H01L21/26

CPC分类号： H01J37/3244 ,  H01J37/32412 ,  H01L21/2236

摘要： With evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.

摘要翻译： 在真空室的内部抽真空并且在真空室中供应气体停止的情况下，在氦气和乙硼烷气体的混合气体被密封在真空室中的状态下，在真空容器中产生等离子体 向样品电极提供高频电力。 通过提供给样品电极的高频电力，将硼引入到衬底表面附近。

公开(公告)号：US20070026649A1

公开(公告)日：2007-02-01

申请号：US11531637

申请日：2006-09-13

申请人： Tomohiro Okumura ,  Ichiro Nakayama ,  Bunji Mizuno ,  Yuichiro Sasaki

发明人： Tomohiro Okumura ,  Ichiro Nakayama ,  Bunji Mizuno ,  Yuichiro Sasaki

IPC分类号： H01L21/04

CPC分类号： H01L21/2236 ,  H01J37/321 ,  H01J37/32412

摘要： In order to realize a plasma doping method capable of carrying out a stable low-density doping, exhaustion is carried out with a pump while introducing a predetermined gas into a vacuum chamber from a gas supplying apparatus, the pressure of the vacuum chamber is held at a predetermined pressure and a high frequency power is supplied to a coil from a high frequency power source. After the generation of plasma in the vacuum chamber, the pressure of the vacuum chamber is lowered, and the low-density plasma doping is performed to a substrate placed on a substrate electrode. Moreover, the pressure of the vacuum chamber is gradually lowered, and the high frequency power is gradually increased, thereby the low-density plasma doping is carried out to the substrate placed on the substrate electrode. Furthermore, a forward power Pf and a reflected power Pr of the high frequency power supplied to the substrate electrode are sampled at a high speed, and when a value of which the power difference Pf-Pr is integrated with respect to time reaches a predetermined value, the supply of the high frequency power is suspended.

摘要翻译： 为了实现能够进行稳定的低密度掺杂的等离子体掺杂方法，在从气体供给装置将预定气体引入真空室的同时用泵进行排气，真空室的压力保持在 预定的压力和高频功率从高频电源提供给线圈。 在真空室中产生等离子体之后，真空室的压力降低，并且对放置在基板电极上的基板进行低密度等离子体掺杂。 此外，真空室的压力逐渐降低，并且高频功率逐渐增加，从而对放置在基板电极上的基板进行低密度等离子体掺杂。 此外，提供给基板电极的高频功率的正向功率Pf和反射功率Pr被高速采样，并且当功率差Pf-Pr相对于时间积分的值达到预定值时 ，高频电源的供应被暂停。

公开(公告)号：US20070020958A1

公开(公告)日：2007-01-25

申请号：US11517456

申请日：2006-09-08

申请人： Tomohiro Okumura ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Bunji Mizuno ,  Yuichiro Sasaki

发明人： Tomohiro Okumura ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Bunji Mizuno ,  Yuichiro Sasaki

IPC分类号： H01L21/00

CPC分类号： H01J37/3244 ,  H01J37/32412 ,  H01L21/2236

摘要： With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.

摘要翻译： 在真空室的内部抽真空，并且在真空室中供气进入中止状态下，在真空室内密封氦气和乙硼烷气体的混合气体的状态下，在真空容器中产生等离子体，同时 向样品电极提供高频电力。 通过提供给样品电极的高频功率，将硼引入到衬底表面附近。

公开(公告)号：US20050170669A1

公开(公告)日：2005-08-04

申请号：US10935312

申请日：2004-09-08

申请人： Tomohiro Okumura ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Bunji Mizuno ,  Yuichiro Sasaki

发明人： Tomohiro Okumura ,  Ichiro Nakayama ,  Satoshi Maeshima ,  Bunji Mizuno ,  Yuichiro Sasaki

IPC分类号： H01L21/265 ,  H01L21/223 ,  H01L21/26 ,  B05B5/025 ,  B05C5/00 ,  H01L21/324 ,  H01L21/42 ,  H01L21/477

CPC分类号： H01J37/3244 ,  H01J37/32412 ,  H01L21/2236

摘要： With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.

摘要翻译： 在真空室的内部抽真空，并且在真空室中供气进入中止状态下，在真空室内密封氦气和乙硼烷气体的混合气体的状态下，在真空容器中产生等离子体，同时 向样品电极提供高频电力。 通过提供给样品电极的高频功率，将硼引入到衬底表面附近。