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    MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
    93.
    发明公开
    MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240038758A1

    公开(公告)日：2024-02-01

    申请号：US18261796

    申请日：2022-09-27

    申请人： Nuvoton Technology Corporation Japan

    发明人： Kazumi TSUTSUMIDA ,  Katsuyoshi JOKYU ,  Keiichi MURAYAMA

    IPC分类号： H01L27/02 ,  H01L29/78 ,  H01L29/866 ,  H01L29/06

    CPC分类号： H01L27/0255 ,  H01L29/7808 ,  H01L29/866 ,  H01L29/0692

    摘要： A semiconductor device manufacturing method includes: forming a first groove having depth H in a semiconductor layer; filling the first groove with an oxide film and forming a surface oxide film having thickness a on an upper surface of the semiconductor layer to equalize the oxide film and the surface oxide film in height; forming a second groove having depth h greater than thickness a, from an uppermost surface of a third oxide film; forming gate trenches deeper than depth H, in the semiconductor layer; depositing polysilicon until at least the gate trenches and the second groove are filled with polysilicon; forming a peripheral element by injecting an impurity into polysilicon deposited in the second groove; and making a thickness of the peripheral element equal to depth h by concurrently removing polysilicon deposited in the gate trenches and polysilicon deposited in the second groove until they become equal in height.

    SILICON CARBIDE SEMICONDUCTOR DEVICE
    95.
    发明公开
    SILICON CARBIDE SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230207680A1

    公开(公告)日：2023-06-29

    申请号：US18170938

    申请日：2023-02-17

    申请人： FUJI ELECTRIC CO., LTD.

    发明人： Hiroyuki FUJISAWA ,  Akimasa KINOSHITA

    IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L29/10

    CPC分类号： H01L29/7808 ,  H01L29/0696 ,  H01L29/7813 ,  H01L29/1045 ,  H01L29/1608

    摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an insulating film, first electrodes, a second electrode, and trenches. The first semiconductor regions and the second semiconductor regions are periodically disposed apart from one another in a first direction in which the trenches extend in a stripe pattern.

    SEMICONDUCTOR DEVICE WITH EQUIPOTENTIAL RING ELECTRODE
    96.
    发明公开
    SEMICONDUCTOR DEVICE WITH EQUIPOTENTIAL RING ELECTRODE 审中-公开

    公开(公告)号：US20230207555A1

    公开(公告)日：2023-06-29

    申请号：US18178913

    申请日：2023-03-06

    申请人： ROHM CO., LTD.

    发明人： Hiroyuki KANEDA

    IPC分类号： H01L27/02 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L29/861 ,  H01L21/761 ,  H01L29/40

    CPC分类号： H01L27/0255 ,  H01L21/761 ,  H01L29/401 ,  H01L29/404 ,  H01L29/408 ,  H01L29/0619 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/861 ,  H01L29/7808 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/66136 ,  H01L29/66734 ,  H01L29/16

    摘要： A semiconductor device includes a semiconductor substrate, an element region including an active element formed at the semiconductor substrate, a channel stopper formed in an outer peripheral region of the semiconductor substrate, and an insulating film that covers a surface of the semiconductor substrate and that has a first contact hole by which the channel stopper is exposed. The semiconductor device further includes a first field plate, a second field plate, and an equipotential ring electrode. The first field plate is formed on the insulating film, and faces the semiconductor substrate between the channel stopper and the element region through the insulating film. The second field plate is embedded in the insulating film, and faces the semiconductor substrate between the first field plate and the channel stopper through the insulating film. The equipotential ring electrode is formed along an outer peripheral region of the semiconductor substrate. The equipotential ring electrode is connected to the channel stopper through the first contact hole, and is connected to the first field plate, and is connected to the second field plate through a second contact hole formed in the insulating film.

    SEMICONDUCTOR DEVICE
    98.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20170263598A1

    公开(公告)日：2017-09-14

    申请号：US15247541

    申请日：2016-08-25

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Ryuta ARAI ,  Hidetoshi ASAHARA ,  Makoto TSUZUKI

    IPC分类号： H01L27/02 ,  H01L29/87 ,  H01L29/78 ,  H01L29/10 ,  H01L27/06 ,  H01L49/02

    CPC分类号： H01L27/0255 ,  H01L27/0629 ,  H01L28/24 ,  H01L29/1095 ,  H01L29/7802 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/87

    摘要： A semiconductor device includes a first bidirectional diode of a ring shape surrounding a central region and including a first connection section and a second connection section which is provided to the inner side of the ring shape from the first connection section, a semiconductor element in the central region including a first semiconductor element electrode, a second semiconductor element electrode, and a control electrode, the first semiconductor element electrode electrically connected to the first connection section and the second semiconductor element electrode electrically connected to the control electrode, a first resistor including a first resistor electrode and a second resistor electrode, the first resistor electrode electrically connected to the second connection section and the control electrode, a second bidirectional diode electrically connected to the second resistor electrode and to the second semiconductor element electrode, and a second resistor element electrically connected to the second resistor electrode.