Abstract:
A memory system includes a plurality of memory devices arranged in sets on at least one memory module, each set including at least one memory device. The system further includes respective dedicated serial data and/or control busses configured to couple respective ones of the memory device sets to a memory controller external to the at least one memory module. The dedicated serial data and/or control busses may be configured to provide unbuffered access to the individual memory devices from the memory controller.
Abstract:
In a semiconductor memory integrated circuit (IC), a plurality of first data IO pads, a plurality of address and instruction pads, and a plurality of second data IO/address pads, are arranged in groups adjacent each other. Each of the plurality of the second data IO/address pads is used as a second data IO pad in response to a control signal when packaged into a first package form and is used as an address pad in response to the control signal when packaged into a second package form. The semiconductor memory IC of the present invention can selectively use a portion of pads as data IO pads or address/instruction pads, and thus the IC is compatible for use with different types of packages. The semiconductor memory IC of the present invention further allows for simplified wire bonding when it is packaged into different types of packages, and thus the possibility of failure of the semiconductor memory device is reduced.
Abstract:
A signal transmission circuit and a method equalize differential delay characteristics of two signal transmission lines. A controllable delay unit is connected serially to the second line, so as to compensate by adding its internal delay. An auxiliary signal transmission line replicates the second transmission line, while it processes the input signal of the first. A controlling unit compares the output signal of the first transmission line and the of the auxiliary signal transmission line, and adjusts dynamically the internal delay of the controllable delay unit, to attain continuous synchronization. A data latch circuit synchronizes the delays of data paths by having one controllable delay units in each of the data paths.
Abstract:
A memory system using a simultaneous bi-directional input/output (SBD I/O) circuit on an address bus line. The memory system includes a first address I/O circuit and a second address I/O circuit, which are connected by the address bus line. The first address I/O circuit may be included in a controller, transmits an address signal to the address bus line, and receives an acknowledgement signal from the address bus line. The second address I/O circuit may be included in a memory device (such as dynamic random access memory (DRAM)), transmits the acknowledgement signal to the address bus line, and receives the address signal from the address bus line. The memory system may also include an error correction circuit unit which generates the acknowledgement signal indicating if an error is present in the address signal received by the second address I/O circuit.
Abstract:
Integrated circuit memory devices include a memory cell array that is configured to write N data bits in parallel and a write data path that is configured to serially receive 2N data bits from an external terminal. The write data path includes 2N write data buffers that are configured to store the 2N data bits, 2N switches, and N data lines that are configured to connect at least N of the 2N switches to the memory cell array to write therein N data bits in parallel. A reduced number of local data lines and/or global data lines may be provided.
Abstract:
A semiconductor device includes an ODT (on die termination) pin coupled to a tester that applies a tester termination control signal thereon. The semiconductor device also includes a measure path that transmits the tester termination control signal from the ODT pin to an ODT circuit during measurement of a parameter of the semiconductor device. The ODT pin and the measure path advantageously allow for control of the ODT circuit by the tester for more accurate parameter characterization.
Abstract:
Disclosed is a memory module and a method of calibrating an impedance of a semiconductor memory device of the memory module, where the memory module includes semiconductor memory devices each having a separate terminal for calibrating impedance characteristics, and a reference resistor commonly connected to the separate terminals, such that the number of reference resistors used in calibration of impedance characteristics of an off-chip driver or an on-die termination circuit of the semiconductor memory device is reduced.
Abstract:
Methods for controlling the timing of a pre-charge operation in a memory device are provided. In embodiments of the present invention, the timing may be controlled by dynamically selecting a word line off time based on information about a number of column cycles. This may be accomplished, for example, by routing a word line disable signal via one of a first plurality of delay paths. The methods may further include dynamically selecting a bit line equalization start time based on the information about the number of column cycles. This may be accomplished, for example, by routing a bit line equalization start signal via one of a second plurality of delay paths. Pursuant to still further embodiments of the present invention, systems for controlling timing in a memory device are provided which include a control circuit that is configured to select a word line off time from a plurality of word line off times in response to a word line signal and information about a number of column cycles.
Abstract:
A data output driver of a semiconductor memory device can minimize a difference in slew rate of an output signal according to a selected bit organization. The data output driver includes a pull-up driver and a pull-down driver. The pull-up driver pulls up an output terminal and the pull-down driver pulls down the output terminal. In particular, current driving capabilities of the pull-up driver and/or the pull-down driver are changed in response to bit organization information signals of the semiconductor memory device.
Abstract:
The present invention provides a memory module, comprising: a plurality of semiconductor memory devices for writing and reading m-bit parallel data; and a buffer for converting n-bit serial data into the m-bit parallel data to output to the plurality of semiconductor memory devices, converting the m-bit parallel data into the n-bit serial data to output to a first external portion during a normal operation, buffering 2n-bit parallel data to output to the plurality of semiconductor memory devices, and buffering the m-bit parallel data to output to a second external portion during a test operation.