公开(公告)号：US20070239383A1

公开(公告)日：2007-10-11

申请号：US11394860

申请日：2006-03-31

Applicant: Merritt Funk ,  Daniel Prager

Inventor： Merritt Funk ,  Daniel Prager

IPC: G06F19/00

CPC classification number: G01N21/4788

Abstract: A method of refining a virtual profile library includes obtaining a reference signal measured off a reference structure on a semiconductor wafer with a metrology device. A best match is selected of the reference signal in a virtual profile data space. The virtual profile data space has data points with specified accuracy values. The data points represent virtual profile parameters and associated virtual profile signals. The virtual profile parameters characterize the profile of an integrated circuit structure. The best match being a data point of the profile data space with a signal closest to the reference signal. Refined virtual profile parameters are determined corresponding to the reference signal based on the virtual profile parameters of the selected virtual profile signal using a refinement procedure.

Abstract translation: 精细虚拟简档库的方法包括：使用测量装置获得在半导体晶片上的参考结构测量的参考信号。 在虚拟简档数据空间中选择参考信号的最佳匹配。 虚拟配置文件数据空间具有指定精度值的数据点。 数据点表示虚拟轮廓参数和相关联的虚拟轮廓信号。 虚拟轮廓参数表征集成电路结构的轮廓。 最佳匹配是具有最接近参考信号的信号的简档数据空间的数据点。 使用细化过程，基于所选虚拟简档信号的虚拟简档参数，对应于参考信号来确定精细虚拟简档参数。

公开(公告)号：US20070229806A1

公开(公告)日：2007-10-04

申请号：US11396210

申请日：2006-03-30

Applicant: Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

Inventor： Kevin Lally ,  Merritt Funk ,  Radha Sundararajan

IPC: G01N21/00

CPC classification number: G01N21/9501 ,  G01N21/4788 ,  G01N21/95607 ,  H01L22/12

Abstract: A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology includes directing an incident beam on the damaged structure. A diffracted beam is received from the damaged structure. The received diffracted beam is processed to determine a profile of an undamaged portion of the damaged structure and to measure an amount of dielectric damage of the damaged structure.

Abstract translation: 使用光学计量测量在半导体晶片上形成的损坏结构的方法包括将入射光束引导到损坏的结构上。 从损坏的结构接收衍射光束。 处理接收的衍射光束以确定受损结构的未损伤部分的轮廓并且测量损坏结构的电介质损伤的量。

公开(公告)号：US07158851B2

公开(公告)日：2007-01-02

申请号：US10609129

申请日：2003-06-30

Applicant: Merritt Funk

Inventor： Merritt Funk

IPC: G06F19/00

CPC classification number: G05B19/41875 ,  G05B2219/31265 ,  G05B2219/32195 ,  G05B2219/45031 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/26

Abstract: A method of using a run-to-run (R2R) controller to provide wafer-to-wafer (W2W) control in a semiconductor processing system is provided. The R2R controller includes a feed-forward (FF) controller, a process model controller, a feedback (FB) controller, and a process controller. The R2R controller uses feed-forward data, modeling data, feedback data, and process data to update a process recipe on a wafer-to-wafer time frame.

Abstract translation: 提供了一种使用运行（R2R）控制器在半导体处理系统中提供晶圆到晶片（W2W）控制的方法。 R2R控制器包括前馈（FF）控制器，过程模型控制器，反馈（FB）控制器和过程控制器。 R2R控制器使用前馈数据，建模数据，反馈数据和过程数据来更新晶圆到晶片时间框架上的工艺配方。

公开(公告)号：US20060184264A1

公开(公告)日：2006-08-17

申请号：US11058321

申请日：2005-02-16

Applicant: James Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

Inventor： James Willis ,  Merritt Funk ,  Kevin Lally ,  Kevin Pinto ,  Masayuki Tomoyasu ,  Raymond Peterson ,  Radha Sundararajan

IPC: G06F19/00

CPC classification number: G05B19/4184 ,  G05B2219/31356 ,  G05B2219/32179 ,  G05B2219/45031 ,  Y02P80/40 ,  Y02P90/14 ,  Y02P90/20 ,  Y02P90/22 ,  Y02P90/86

Abstract: A method for implementing FDC in an APC system including receiving an FDC model from memory; providing the FDC model to a process model calculation engine; computing a vector of predicted dependent process parameters using the process model calculation engine; receiving a process recipe comprising a set of recipe parameters, providing the process recipe to a process module; executing the process recipe to produce a vector of measured dependent process parameters; calculating a difference between the vector of predicted dependent process parameters and the vector of measured dependent process parameters; comparing the difference to a threshold value; and declaring a fault condition when the difference is greater than the threshold value.

公开(公告)号：US20060042543A1

公开(公告)日：2006-03-02

申请号：US10927514

申请日：2004-08-27

Applicant: Merritt Funk ,  Wesley Natzle

Inventor： Merritt Funk ,  Wesley Natzle

IPC: B05C11/00

CPC classification number: H01L22/20 ,  G05B2219/45031

Abstract: The invention relates to controlling a semiconductor processing system. Among other things, the invention relates to a run-to-run controller to create virtual modules to control a multi-pass process performed by a multi-chamber tool during the processing of a semiconductor wafer.

Abstract translation: 本发明涉及控制半导体处理系统。 其中，本发明涉及一种运行到运行的控制器，用于创建虚拟模块以控制在半导体晶片的处理期间由多室工具执行的多遍处理。

公开(公告)号：US10395903B2

公开(公告)日：2019-08-27

申请号：US15983532

申请日：2018-05-18

Applicant: Zhiying Chen ,  Lee Chen ,  Merritt Funk

Inventor： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC: H01J37/32 ,  C23C16/50 ,  H01J37/30

Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

公开(公告)号：US20180269041A1

公开(公告)日：2018-09-20

申请号：US15983532

申请日：2018-05-18

Applicant: Zhiying Chen ,  Lee Chen ,  Merritt Funk

Inventor： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC: H01J37/32 ,  H01J37/30

CPC classification number: H01J37/32899 ,  H01J37/30 ,  H01J37/32082 ,  H01J37/3233

Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.

公开(公告)号：US09087677B2

公开(公告)日：2015-07-21

申请号：US13433078

申请日：2012-03-28

Applicant: Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

IPC: H01J3/14 ,  H01J37/32 ,  H01J49/48 ,  H05H1/00

CPC classification number: H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

Abstract: A method of generating a signal representing with an ion energy analyzer for use in determining an ion energy distribution of a plasma. The ion energy analyzer, used for determining an ion energy distribution of a plasma, includes a first grid and a second grid that is spaced away from and electrically isolated from the first grid. The first grid forms a first surface of the ion energy analyzer and is positioned to be exposed to the plasma. The first grid includes a first plurality of openings, which are dimensioned to be less than a Debye length for the plasma. A voltage source and an ion current meter are operably coupled to the second grid, the latter of which is configured to measure an ion flux onto the ion collector and to transmit a signal that represents the measured ion flux. The method includes selectively and variably biasing the second grid relative to the first grid.

Abstract translation: 一种产生用离子能量分析仪表示的用于确定等离子体的离子能量分布的信号的方法。 用于确定等离子体的离子能量分布的离子能量分析器包括与第一格栅隔开并与之隔离的第一格栅和第二栅格。 第一栅格形成离子能量分析器的第一表面并定位成暴露于等离子体。 第一栅格包括第一多个开口，其尺寸被设计成小于等离子体的德拜长度。 电压源和离子电流计可操作地耦合到第二栅极，第二栅极被配置为测量离子收集器上的离子通量并传输表示所测量的离子通量的信号。 该方法包括相对于第一格栅选择性地和可变地偏置第二格栅。

公开(公告)号：US08808496B2

公开(公告)日：2014-08-19

申请号：US13249485

申请日：2011-09-30

Applicant: Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L. G. Ventzek

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihiko Iwao ,  Peter L. G. Ventzek

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC classification number: H01J37/32192 ,  H01J37/32247 ,  H01J37/32256 ,  Y10T29/49002

Abstract: The invention provides a plurality of plasma tuning rod subsystems. The plasma tuning rod subsystems can comprise one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. Some of the plasma tuning rods can be configured to couple the EM energy from one or more of the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space.

Abstract translation: 本发明提供了多个等离子体调谐棒子系统。 等离子体调谐杆子系统可以包括一个或多个微波空腔，其被配置为通过在等离子体内和/或邻近等离子体中的一个或多个等离子体调谐杆中产生共振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。 一个或多个微波空腔组件可以耦合到处理室，并且可以包括一个或多个调谐空间/空腔。 每个调谐空间/空腔可以具有耦合到其上的一个或多个等离子体调谐杆。 等离子体调谐棒中的一些可被配置为将EM能量从一个或多个谐振腔耦合到处理室内的处理空间，从而在工艺空间内产生均匀的等离子体。

公开(公告)号：US20130203258A1

公开(公告)日：2013-08-08

申请号：US13366341

申请日：2012-02-05

Applicant: Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

Inventor： Zhiying CHEN ,  Jianping ZHAO ,  Lee CHEN ,  Merritt FUNK ,  Radha SUNDARARAJAN

IPC: H01L21/3065 ,  B32B9/04 ,  B05D5/12 ,  H05H1/24

CPC classification number: H01J37/32495 ,  H01J37/32504

Abstract: A replaceable chamber element for use in a plasma processing system, such as a plasma etching system, is described. The replaceable chamber element includes a chamber component configured to be exposed to plasma in a plasma processing system, wherein the chamber component is fabricated of a ferroelectric material.

Abstract translation: 描述了用于诸如等离子体蚀刻系统的等离子体处理系统中的可替换室元件。 可替换室元件包括腔室部件，其被构造成在等离子体处理系统中暴露于等离子体，其中室部件由铁电材料制成。