公开(公告)号：US06523415B2

公开(公告)日：2003-02-25

申请号：US09922621

申请日：2001-08-06

Applicant: Anthony D. Kurtz ,  Andrew Bemis ,  Timothy Nunn ,  Joseph Van De Weert

Inventor： Anthony D. Kurtz ,  Andrew Bemis ,  Timothy Nunn ,  Joseph Van De Weert

IPC: G01L906

CPC classification number: G01L9/0055 ,  Y10T29/42

Abstract: A pressure transducer including: a silicon substrate including: a first surface adapted for receiving a pressure applied thereto, an oppositely disposed second surface, and a flexing portion adapted to deflect when pressure is applied to the first surface; at least a first sensor formed on the second surface and adjacent to a center of the flexing portion, and adapted to measure the pressure applied to the first surface; at least a second gauge sensor formed on the second surface and adjacent to a periphery of the flexing portion, and adapted to measure the pressure applied to the first surface; a glass substrate secured to the second surface of the silicon wafer.

公开(公告)号：US06401541B1

公开(公告)日：2002-06-11

申请号：US09432467

申请日：1999-11-03

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: G01L1302

CPC classification number: G01L15/00 ,  G01L9/065

Abstract: A method for measuring multiple pressures and a pressure sensing system for accomplishing the same. The method for measuring a plurality of pressures includes, exposing each of a plurality of pressure sensors to a corresponding plurality of environments each having a corresponding pressure to be measured, determining how frequently to measure each of the plurality of pressures, determining a sequence for utilizing the pressure sensors to measure the corresponding plurality of pressures, the sequence being dependent upon the determined frequency for each of the plurality of pressures and selectively utilizing each of the plurality of pressure sensors according to the determined sequence to measure the pressure to which it is exposed.

Abstract translation: 用于测量多个压力的方法和用于实现其的压力感测系统。 用于测量多个压力的方法包括：将多个压力传感器中的每一个暴露于相应的多个环境，每个环境具有相应的待测压力，确定测量多个压力中的每一个的频率，确定利用 所述压力传感器用于测量相应的多个压力，所述顺序取决于所述多个压力中的每一个的所确定的频率，并且根据所确定的顺序选择性地利用所述多个压力传感器中的每一个以测量其暴露于的压力 。

公开(公告)号：US5926692A

公开(公告)日：1999-07-20

申请号：US713266

申请日：1996-09-12

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: G01L9/00 ,  H01L21/00

CPC classification number: G01L19/146 ,  G01L19/0038 ,  G01L19/147 ,  G01P2015/084 ,  Y10S73/04

Abstract: A pressure sensor assembly including semiconductor transducer elements disposed upon a diaphragm support structure, wherein the support structure is comprised of a plurality of substrate layers anodically bonded together. A groove is disposed in the support structure creating an area of reduced thickness within the support structure. The ares of reduced thickness acts as a stress concentration region. As such, the transducer elements are disposed within the areas of reduced thickness so as to efficiently monitor any deformations experienced by the support structure. The groove that creates the areas of reduced thickness is formed in each of the substrate layers, prior to bonding into the overall structure, as such a very accurately tolerance groove can be formed into structure which greatly increases the reliability of the structure.

Abstract translation: 包括设置在隔膜支撑结构上的半导体换能器元件的压力传感器组件，其中所述支撑结构由阳极结合在一起的多个基底层组成。 凹槽设置在支撑结构中，在支撑结构内形成厚度减小的区域。 厚度减小的部分作为应力集中区域。 因此，换能器元件设置在减小厚度的区域内，以便有效地监视支撑结构所经历的任何变形。 在结合到整个结构中之前，在每个基板层中形成产生厚度减小的凹槽，因此可以将非常精确的公差槽形成为大大提高结构可靠性的结构。

公开(公告)号：US5686826A

公开(公告)日：1997-11-11

申请号：US617502

申请日：1996-03-15

Applicant: Anthony D. Kurtz ,  Wolf S. Landmann

Inventor： Anthony D. Kurtz ,  Wolf S. Landmann

IPC: G01L1/22 ,  G01L9/06 ,  H03F1/30 ,  H03H2/00 ,  H03F3/26

CPC classification number: H03F1/30 ,  G01L1/2281 ,  G01L9/065

Abstract: The present compensating circuit operates to reduce the span shift error due to ambient temperature changes of a span resistance compensated, bridge array circuit arrangement for a semiconductor transducer employing piezoresistive sensors. The span resistance method alone cannot reduce the span shift error to less than one percent (1%) for full scale. The present compensating circuit applies a constant voltage source, derived from the voltage source applied to the transducer, to a non-inverting input to an operational amplifier. The circuit also applies an ambient temperature dependent voltage, derived from the ambient temperature dependent bridge resistance of the bridge array circuit, to an inverting input of the operational amplifier. Both inputs to the operational amplifier are fed back through a different resistance loop to control the output voltage in response to the non-linearity of the ambient temperature dependent bridge resistance. The present circuit produces a compensation voltage which counteracts the downward span shift influence of the bridge resistance, resulting in a span shift error of less than five tenths of a percent (0.5%) for full scale.

Abstract translation: 本补偿电路用于减少由于使用压阻式传感器的半导体传感器的跨度电阻补偿桥阵列电路装置的环境温度变化引起的跨距偏移误差。 单向跨距阻力法不能将跨距偏差误差降低到满量程的1％（1％）以下。 本补偿电路将从施加到换能器的电压源导出的恒定电压源施加到运算放大器的非反相输入。 该电路还将来自桥接阵列电路的环境温度依赖性电桥电阻的环境温度相关电压应用于运算放大器的反相输入。 运算放大器的两个输入都通过不同的电阻回路反馈，以响应环境温度依赖的电桥电阻的非线性来控制输出电压。 本电路产生补偿电压，该补偿电压抵消桥电阻的向下跨距移动影响，造成满量程的跨度误差小于百分之五（0.5％）。

公开(公告)号：US5549006A

公开(公告)日：1996-08-27

申请号：US248428

申请日：1994-05-24

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: G01L9/00 ,  G01L19/04 ,  G01B7/16

CPC classification number: G01L9/0042 ,  G01L9/0055 ,  G01L9/065

Abstract: A pressure transducer comprising a deflecting member fabricated from a semiconducting material having a first conductivity and a negative temperature coefficient of resistance, and four piezoresistive sensors fabricated from a semiconducting material having a second conductivity opposite to the first conductivity and a positive temperature coefficient of resistance, the sensors being disposed on a first surface of the deflecting member whereby the sensors are to be coupled to form a Wheatstone bridge configuration, and a temperature compensating resistor network fabricated from the semiconducting material of the first conductivity whereby when the resistor network is coupled to the sensors coupled in the Wheatstone bridge configuration, and a voltage placed across the bridge and the temperature compensating resistor network, an output is provided by the bridge which is independent of changes in temperature.

Abstract translation: 一种压力传感器，包括由具有第一导电性和负温度系数的半导体材料制成的偏转构件和由具有与第一导电性相反的第二导电性和正温度系数电阻的半导体材料制成的四个压阻传感器， 所述传感器设置在所述偏转构件的第一表面上，由此所述传感器将被耦合以形成惠斯登电桥结构，以及由所述第一导电性的所述半导体材料制成的温度补偿电阻器网络，其中当所述电阻器网络耦合到 耦合在惠斯登电桥配置中的传感器，以及横跨桥接器和温度补偿电阻器网络的电压，桥接器提供输出，其独立于温度变化。

公开(公告)号：US5454915A

公开(公告)日：1995-10-03

申请号：US115983

申请日：1993-09-01

Applicant: Joseph S. Shor ,  Anthony D. Kurtz

Inventor： Joseph S. Shor ,  Anthony D. Kurtz

IPC: H01L21/465 ,  H01L21/76 ,  H01L29/24 ,  H01L29/861 ,  H01L33/00 ,  H01L33/34 ,  C25F3/12

CPC classification number: H01L33/34 ,  H01L21/465 ,  H01L21/76 ,  H01L29/1608 ,  H01L29/861 ,  H01L33/0054 ,  Y10S438/96

Abstract: Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Abstract translation: 根据技术制造多孔碳化硅，其导致在10纳米范围内材料内部的纳米微晶的显着部分。 描述了钝化多孔碳化硅的技术，其导致制造具有更亮的蓝色发光并显示出改善的质量的光电子器件。 基于所述技术的某些技术，将多孔碳化硅用作用于碳化硅图案化的牺牲层。 然后通过氧化和其它方法从体基材中除去多孔碳化硅。 所描述的技术采用两步法，其用于模制体碳化硅，其中晶片的选定区域然后制成多孔，然后随后去除多孔层。 形成多孔碳化硅的过程表现出掺杂剂选择性，并且对碳化硅多层实现了两步蚀刻工艺。

公开(公告)号：US5425841A

公开(公告)日：1995-06-20

申请号：US78391

申请日：1993-06-16

Applicant: Anthony D. Kurtz ,  Alexander A. Ned

Inventor： Anthony D. Kurtz ,  Alexander A. Ned

IPC: G01P15/12 ,  H01L21/306 ,  B44C1/22

CPC classification number: G01P15/123 ,  Y10S73/01 ,  Y10S73/04

Abstract: An electromechanical transducer is provided, and the process for making it utilizes a piezoresistive element or gage which is dielectrically isolated from a gap spanning member and substrate upon which it is supported. The gage of the invention is a force gage and is derived from a sacrificial wafer by a series of etching and bonding steps which ultimately provide a gage with substantially reduced strain energy requirements.

Abstract translation: 提供了一种机电传感器，并且其制造方法利用了压电元件或量规，该压阻元件或量规与其所支撑的间隙跨越构件和衬底介电隔离。 本发明的量具是力量计，并且通过一系列蚀刻和结合步骤从牺牲晶片获得，其最终提供具有显着降低的应变能量需求的量具。

公开(公告)号：US5401672A

公开(公告)日：1995-03-28

申请号：US292097

申请日：1994-08-17

Applicant: Anthony D. Kurtz ,  Alexander A. Ned

Inventor： Anthony D. Kurtz ,  Alexander A. Ned

IPC: H01L23/48 ,  H01L25/065 ,  H01L21/52 ,  H01L21/28 ,  H01L21/56 ,  H01L21/58

CPC classification number: H01L25/0657 ,  H01L23/481 ,  H01L2225/06541 ,  H01L2924/0002 ,  Y10S148/012

Abstract: A process wherein plurality of individual device layers having semiconductor material conductive regions extending therethrough are bonded together before or after one or more circuit elements have been fabricated on each layer. Groups of device layers are formed by electrochemically anodizing a wafer of semiconductor material. The wafer is rendered totally porous except for a series of non-porous regions extending therethrough. The wafer is then oxidized and densifted to result in a wafer having a plurality of electrically isolated extended contacts. A plurality of wafers are processed in this manner. A variety of integrated circuit devices are then formed on the surface of each wafer. Once the processing of all individual wafers is completed, each wafer is bonded to another, with the extending contact aligned to electrically interconnect each device layer. The wafers are then diced to provide a plurality of multi-level integrated circuit structures.

Abstract translation: 其中在每个层上制造一个或多个电路元件之前或之后，具有延伸穿过其中的半导体材料导电区域的多个单独器件层结合在一起。 通过电化学阳极氧化半导体材料的晶片形成器件层组。 除了延伸穿过其中的一系列无孔区域之外，晶片是完全多孔的。 然后将晶片氧化并致密化以产生具有多个电隔离的延伸触点的晶片。 以这种方式处理多个晶片。 然后在每个晶片的表面上形成各种集成电路器件。 一旦完成了所有单个晶片的处理，每个晶片被结合到另一个晶片，其中延伸的触点对准以电连接每个器件层。 然后切割晶片以提供多个多级集成电路结构。

公开(公告)号：US4899125A

公开(公告)日：1990-02-06

申请号：US82407

申请日：1987-07-24

Applicant: Anthony D. Kurtz

Inventor： Anthony D. Kurtz

IPC: G01L1/18 ,  G01P15/08 ,  G01P15/12

CPC classification number: G01P15/123 ,  G01L1/18 ,  G01P15/0802 ,  G01P2015/0828

Abstract: A cantilever beam transducer which is formed by a batch technique utilizing conventional semiconductor processes. The cantilever beam structure has a central aperture which is rectangular in configuration and which is bounded by thinned rib or thinned area sections on either side of the aperture. Each of these areas accommodate a piezoresistive bridge structure which may include a longitudinal and transverse piezoresistive sensor both of which are located on the same surface of the beam within the thinned areas. The resultant cantilever structure has minimum cross-axis sensitivity while the thin ribbed areas enable it to be deflected in directions perpendicular to the main beam surfaces. The cantilever structure further includes top and bottom glass sheets which are anodically bonded to the cantilever structure and which serve as bidirectional stops to prevent excessive forces from damaging the beam.

Abstract translation: 一种采用常规半导体工艺的分批技术形成的悬臂梁传感器。 悬臂梁结构具有中心孔，该中心孔在构造上是矩形的，并且由孔的任一侧上的变薄的肋或薄的区域区限定。 这些区域中的每一个都适应压阻桥结构，其可以包括纵向和横向压阻传感器，两者都位于薄化区域内的梁的相同表面上。 所得到的悬臂结构具有最小的横轴灵敏度，而薄肋区域使得其能够在垂直于主梁表面的方向上偏转。 悬臂结构还包括顶部和底部玻璃板，其被阳极结合到悬臂结构并且用作双向挡块以防止过大的力损坏梁。

公开(公告)号：US4516430A

公开(公告)日：1985-05-14

申请号：US558033

申请日：1983-12-05

Applicant: Anthony D. Kurtz ,  Timothy A. Nunn ,  Joseph R. Mallon

Inventor： Anthony D. Kurtz ,  Timothy A. Nunn ,  Joseph R. Mallon

IPC: A61B5/0215 ,  A61B5/0428 ,  G01L9/00 ,  G01L1/22

CPC classification number: A61B5/04282 ,  A61B5/0215 ,  G01L9/0055

Abstract: There is disclosed a medical transducer apparatus which employs composite planar members each of which is fabricated from a highly insulative material. The members are positioned in congruency and a first member which may be a composite member has a diaphragm area located on the surface thereof to which a piezoresistive gage is bonded. The gage is surrounded by an aperture in another member to enable leads from the gage to be directed to an interconnection and circuit board also fabricated from an insulator material. The structure provides isolation to the patient in regard to the biasing source used for the gage array and also provides isolation based on external voltage which serves to protect the transducer during operation.

Abstract translation: 公开了一种医疗用换能器装置，其采用由高绝缘材料制成的复合平面构件。 构件一致地定位，并且可以是复合构件的第一构件具有位于其压电压力表所粘合的表面上的隔膜区域。 量具被另一个构件中的孔包围，以使得量具的引线被引导到也由绝缘体材料制成的互连和电路板。 该结构提供了与用于量具阵列的偏置源相对于患者的隔离，并且还提供了基于外部电压的隔离，其用于在操作期间保护换能器。