公开(公告)号：US09305805B2

公开(公告)日：2016-04-05

申请号：US14601611

申请日：2015-01-21

Applicant: Applied Materials, Inc.

Inventor： Mei Chang ,  Joseph Yudovsky

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/677 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/6776

Abstract: Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element and remote plasma are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.

Abstract translation: 提供了使用原子层沉积装置蚀刻衬底的方法。 讨论了包括具有热元件和远程等离子体的气体分布板的原子层沉积设备。 热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

公开(公告)号：US09177780B2

公开(公告)日：2015-11-03

申请号：US14031332

申请日：2013-09-19

Applicant: Applied Materials, Inc.

Inventor： David T. Or ,  Joshua Collins ,  Mei Chang

IPC: H01L21/02

CPC classification number: H01L21/02057 ,  H01L21/02

Abstract: Methods for processing a substrate are described herein. Methods can include positioning a substrate with an exposed surface comprising a silicon oxide layer in a processing chamber, biasing the substrate, treating the substrate to roughen a portion of the silicon oxide layer, heating the substrate to a first temperature, exposing the exposed surface of the substrate to a plasma comprising ammonium fluoride to form one or more volatile products while maintaining the first temperature, and heating the substrate to a second temperature, which is higher than the first temperature, to sublimate the volatile products.

Abstract translation: 本文描述了用于处理衬底的方法。 方法可以包括将具有包括氧化硅层的暴露表面的衬底定位在处理室中，偏置衬底，处理衬底以使氧化硅层的一部分粗糙化，将衬底加热到​​第一温度，暴露暴露的表面 所述衬底至含有氟化铵的等离子体，以形成一种或多种挥发性产物，同时保持第一温度，并将衬底加热到​​高于第一温度的第二温度以升华挥发性产物。

公开(公告)号：US20150176126A1

公开(公告)日：2015-06-25

申请号：US14137007

申请日：2013-12-20

Applicant: Applied Materials, Inc.

Inventor： Zhenbin Ge ,  Chien-Teh Kao ,  Joel M. Huston ,  Mei Chang

IPC: C23C16/455 ,  B08B9/032

CPC classification number: C23C16/45565 ,  B08B9/0325 ,  C23C14/22 ,  C23C16/4412 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/52 ,  Y10T137/4259

Abstract: Provided are gas distribution apparatus with a delivery channel having an inlet end, an outlet end and a plurality of apertures spaced along the length. The inlet end is connectable to an inlet gas source and the outlet end is connectible with a vacuum source. Also provided are gas distribution apparatus with spiral delivery channels, intertwined spiral delivery channels, splitting delivery channels, merging delivery channels and shaped delivery channels in which an inlet end and outlet end are configured for rapid exchange of gas within the delivery channels.

Abstract translation: 提供了具有输送通道的气体分配设备，其具有入口端，出口端和沿着该长度间隔开的多个孔。 入口端可连接到入口气体源，出口端可与真空源连接。 还提供了具有螺旋输送通道的气体分配设备，缠绕在一起的螺旋输送通道，分流输送通道，合并输送通道和成形输送通道，其中入口端和出口端构造成用于在输送通道内快速交换气体。