Vitreous silica crucible having transparent layer, bubble-containing layer, and semi-transparent layer in its wall, method of manufacturing the same, and method of manufacturing silicon ingot
    101.
    发明授权
    Vitreous silica crucible having transparent layer, bubble-containing layer, and semi-transparent layer in its wall, method of manufacturing the same, and method of manufacturing silicon ingot 有权
    在其壁上具有透明层,含气泡层和半透明层的玻璃状石英坩埚,及其制造方法以及制造硅锭的方法

    公开(公告)号:US09157168B2

    公开(公告)日:2015-10-13

    申请号:US13166189

    申请日:2011-06-22

    摘要: Provided is a vitreous silica crucible which can suppress inward sagging and buckling of the sidewall effectively even when time for pulling silicon ingots is extremely long. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein the crucible has a wall comprising, from an inner surface toward an outer surface of the crucible, a transparent vitreous silica layer having a bubble content rate of less than 0.5%, a bubble-containing vitreous silica layer having a bubble content rate of 1% or more and less than 50%, a semi-transparent vitreous silica layer having a bubble content rate of 0.5% or more and less than 1.0% and having an OH group concentration of 35 ppm or more and less than 300 ppm.

    摘要翻译: 本发明提供一种玻璃状石英坩埚,即使在硅锭的拉伸时间极长的情况下也能够有效地抑制侧壁的向下的下垂和翘曲。 根据本发明,提供了一种用于拉制硅单晶的石英玻璃坩埚,其中坩埚具有从坩埚的内表面朝向外表面的包含具有气泡含量率的透明玻璃状二氧化硅层的壁 小于0.5%的气泡含量为1%以上且小于50%的含气泡的玻璃状二氧化硅层,气泡含量率为0.5%以上且小于1.0%的半透明玻璃状石英层, OH基浓度为35ppm以上且小于300ppm。

    Vitreous silica crucible for pulling silicon single crystal and method of manufacturing the same
    102.
    发明授权
    Vitreous silica crucible for pulling silicon single crystal and method of manufacturing the same 有权
    用于拉硅单晶的玻璃状硅石坩埚及其制造方法

    公开(公告)号:US08936685B2

    公开(公告)日:2015-01-20

    申请号:US13394284

    申请日:2010-08-20

    摘要: The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion. The particle size distribution of the material silica powder for the first opaque vitreous silica portion 11a is wider than that of the second opaque vitreous silica portion 11b, and the material silica powder for the first opaque vitreous silica portion 11a includes more fine powder than that for the second opaque vitreous silica portion 11b.

    摘要翻译: 本发明提供一种可以在拉拔硅单晶时抑制坩埚在高温下的侧壁降低的石英玻璃坩埚,以及制造这种石英玻璃坩埚的方法。 玻璃状石英玻璃坩埚10包括设置在坩埚的外表面侧并且含有大量气泡的不透明玻璃状石英层11和设置在内表面侧的透明氧化硅玻璃层12。 不透明玻璃状石英层11包括设置在坩埚上部的第一不透明玻璃状石英部分11a和设置在坩埚下部的第二不透明玻璃状石英部分11b。 第二不透玻璃状二氧化硅部11b的比重为1.7〜2.1,第一不透明玻璃状石英部11a的比重为1.4〜1.8,小于第二不透明玻璃状二氧化硅部的比重。 用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末的粒度分布比第二不透明玻璃状二氧化硅部分11b的粒度分布宽,并且用于第一不透明玻璃状石英部分11a的材料二氧化硅粉末包含比 第二不透明玻璃状石英部分11b。

    Vitreous silica crucible for pulling single-crystal silicon and method of manufacturing the same
    103.
    发明授权
    Vitreous silica crucible for pulling single-crystal silicon and method of manufacturing the same 有权
    用于拉制单晶硅的玻璃状硅石坩埚及其制造方法

    公开(公告)号:US08871026B2

    公开(公告)日:2014-10-28

    申请号:US12303147

    申请日:2008-09-29

    申请人: Hiroshi Kishi

    发明人: Hiroshi Kishi

    摘要: In order to provide a vitreous silica crucible which does not employ a crystallization accelerator but is difficult to deform during its use even under high temperature, and is easily manufactured, there is provided a vitreous silica crucible for pulling single-crystal silicon wherein the outer surface layer is formed of a bubble-containing vitreous silica layer, the inner surface layer is formed of a vitreous silica layer whose bubbles are invisible to the naked eye, a surface of the outer surface layer includes an unmelted or half-melted silica layer (abbreviated as a half-melted silica layer), and the center line average roughness (Ra) of the half-melted silica layer is 50 to 200 μm, also preferably, and the thickness of the half-melted silica layer is 0.5 to 2.0 mm.

    摘要翻译: 为了提供即使在高温下使用结晶促进剂也难以变形的石英玻璃坩埚,容易制造,提供了一种用于拉拔单晶硅的玻璃状石英坩埚,其中外表面 层由含气泡的玻璃状二氧化硅层形成,内表面层由气泡对肉眼不可见的玻璃状二氧化硅层形成,外表面层的表面包含未熔融或半熔融的二氧化硅层(缩写为 作为半熔融二氧化硅层),半熔融二氧化硅层的中心线平均粗糙度(Ra)优选为50〜200μm,半熔融二氧化硅层的厚度为0.5〜2.0mm。

    Apparatus and method for manufacturing vitreous silica crucible
    104.
    发明授权
    Apparatus and method for manufacturing vitreous silica crucible 有权
    玻璃石坩埚制造装置及方法

    公开(公告)号:US08844321B2

    公开(公告)日:2014-09-30

    申请号:US12893326

    申请日:2010-09-29

    IPC分类号: C03B19/06 C03B19/09 C03B20/00

    摘要: Provided are an apparatus and a method for manufacturing a vitreous silica crucible, which enable accurate measurement of a fume generation amount, prevention of deterioration of an inner surface property, and real-time control of a raw material melting state. Provided is an apparatus for manufacturing a vitreous silica crucible 50 by supplying silica powder into a mold 10 to form a silica powder layer 11, and heating and melting the silica powder layer 11 by arc discharge. The apparatus includes the mold 10 for defining an outer shape of a vitreous silica crucible, an arc discharge unit having a plurality of carbon electrodes 13 and a power-supply unit 40, and a fume-amount measurement unit 30 for detecting an amount of fumes 80 generated in the mold 10.

    摘要翻译: 提供一种制造石英玻璃坩埚的装置和方法,其能够精确测量烟气产生量,防止内表面性质的劣化,以及原料熔化状态的实时控制。 提供一种通过将二氧化硅粉末供给到模具10中以形成二氧化硅粉末层11并通过电弧放电加热和熔化二氧化硅粉末层11来制造石英玻璃坩埚50的装置。 该装置包括用于限定氧化硅玻璃坩埚的外形的模具10,具有多个碳电极13和电源单元40的电弧放电单元和用于检测烟雾量的烟雾量测量单元30 80在模具10中产生。

    Arc discharge method, arc discharge apparatus, and fused silica crucible manufacturing apparatus
    107.
    发明授权
    Arc discharge method, arc discharge apparatus, and fused silica crucible manufacturing apparatus 有权
    电弧放电法,电弧放电装置和石英坩埚坩埚的制造装置

    公开(公告)号:US08416833B2

    公开(公告)日:2013-04-09

    申请号:US12563374

    申请日:2009-09-21

    IPC分类号: C03B5/027 C03B19/01 C03B19/06

    CPC分类号: H05B7/085 C03B19/095

    摘要: An arc discharge method includes the steps of heating and melting a non-conductive object by arc discharge using a plurality of carbon electrodes in a output range of 300 to 12,000 kVA; and setting a ratio of the distance between a contact position at which the carbon electrodes come in contact with each other and a front end to the diameter of the carbon electrode during the start of the arc discharge to be in the range of 0.001 and 0.9.

    摘要翻译: 电弧放电方法包括以下步骤:使用多个碳电极在300〜12000kVA的输出范围内通过电弧放电来加热和熔融非导电物体; 并且在电弧放电开始期间设定碳电极彼此接触的接触位置与前端与碳电极的直径之间的距离的比率在0.001和0.9的范围内。

    VITREOUS SILICA CRUCIBLE
    108.
    发明申请
    VITREOUS SILICA CRUCIBLE 有权
    紫外线可溶性

    公开(公告)号:US20120260852A1

    公开(公告)日:2012-10-18

    申请号:US13148457

    申请日:2010-12-13

    IPC分类号: C30B15/10

    摘要: Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region.

    摘要翻译: 本发明提供一种玻璃状石英玻璃坩埚,其特征在于,在单晶硅拉拔期间具有抑制熔融表面的振动的特殊区域,同时具有能够精确地监测经过特殊区域时的熔融面的变化位置的标记。 用于防止硅熔体晃动的特殊区域设置在直体部分的内壁上,并且标记至少设置在特殊区域的上端和下端。

    Method and apparatus for manufacturing vitreous silica crucible
    109.
    发明授权
    Method and apparatus for manufacturing vitreous silica crucible 有权
    石英玻璃坩埚的制造方法和装置

    公开(公告)号:US08196430B2

    公开(公告)日:2012-06-12

    申请号:US12303994

    申请日:2008-11-28

    IPC分类号: C03B19/01 C03B19/09 C03B19/06

    摘要: A method of manufacturing a vitreous silica crucible by a rotary mold method, which includes performing arc melting in a state in which electrodes are provided so as to be shifted from a mold central line, wherein, by this eccentric arc, the glass temperature difference during melting of a straight body portion, a curved portion and a bottom of the crucible is controlled to 300° C. or below and the thickness of a transparent layer of the straight body portion and the bottom is controlled to 70 to 120% of the thickness of a transparent layer of the curved portion.

    摘要翻译: 一种通过旋转模具法制造石英玻璃坩埚的方法,其包括在设置电极以使其从模具中心线偏移的状态下进行电弧熔化,其中,通过该偏心弧,玻璃温度差在 将坩埚的直体部分,弯曲部分和底部的熔化控制在300℃以下,直体部分和底部的透明层的厚度被控制在厚度的70〜120% 的弯曲部分的透明层。

    APPARATUS AND METHOD FOR MANUFACTURING VITREOUS SILICA CRUCIBLE
    110.
    发明申请
    APPARATUS AND METHOD FOR MANUFACTURING VITREOUS SILICA CRUCIBLE 有权
    用于制造维生素二氧化硅可溶性的装置和方法

    公开(公告)号:US20120131954A1

    公开(公告)日:2012-05-31

    申请号:US13389392

    申请日:2010-08-09

    IPC分类号: C03B20/00

    摘要: There are provided an apparatus and a method for manufacturing a vitreous silica crucible which can prevent the deterioration of the inner surface property in the manufacturing process of a vitreous silica crucible. The apparatus includes a mold defining an outer shape of a vitreous silica crucible, and an arc discharge unit having electrodes and a power-supply unit, wherein each of the electrodes includes a tip end directed to the mold, the other end opposite to the tip end, and a bent portion provided between the tip end and the other end.

    摘要翻译: 提供了一种可以防止在石英玻璃坩埚的制造过程中内表面特性劣化的石英玻璃坩埚的制造装置和方法。 该装置包括限定二氧化硅玻璃坩埚的外形的模具和具有电极和电源单元的电弧放电单元,其中每个电极包括指向模具的尖端,与尖端相对的另一端 端部和设置在前端和另一端之间的弯曲部分。