公开(公告)号：US4685948A

公开(公告)日：1987-08-11

申请号：US824961

申请日：1986-01-31

申请人： Kiyoshi Kuribayashi ,  Masayuki Sakai ,  Hideto Monji ,  Masaki Aoki ,  Hideyuki Okinaka ,  Hideo Torii

发明人： Kiyoshi Kuribayashi ,  Masayuki Sakai ,  Hideto Monji ,  Masaki Aoki ,  Hideyuki Okinaka ,  Hideo Torii

IPC分类号： C03B40/02 ,  B32B15/01 ,  C03B11/08 ,  C03B40/00

CPC分类号： C03B11/086 ,  B32B15/018 ,  C03B2215/12 ,  C03B2215/17 ,  C03B2215/31 ,  C03B2215/34

摘要： A glass optical element is directly press-molded by a method using a noble mold. The mold comprises a base material and a press surface film formed on the base material. The press surface film is an Ir film, or a Ru film, or an alloy film comprising Ir and at least a member selected from the group consisting of Pt, Re, Os, Rh and Ru, or an alloy film comprising Ru and at least a member selected from the group consisting of Pt, Re, Os and Rh.

摘要翻译： 玻璃光学元件通过使用贵金属的方法直接压制成型。 模具包括基材和形成在基材上的冲压表面膜。 压制表面膜是Ir膜或Ru膜，或包含Ir和至少选自Pt，Re，Os，Rh和Ru的成员的合金膜，或者包含Ru和至少包含Ru的合金膜 选自Pt，Re，Os和Rh的成员。

公开(公告)号：US08411484B2

公开(公告)日：2013-04-02

申请号：US12262577

申请日：2008-10-31

申请人： Masaki Aoki

发明人： Masaki Aoki

IPC分类号： G11C11/00 ,  G11C7/00 ,  G11C7/22

CPC分类号： H01L27/101 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2013/009 ,  G11C2213/32 ,  G11C2213/34 ,  G11C2213/79 ,  H01L27/24

摘要： A method of writing into a semiconductor memory device, which includes a resistance memory element 14 which memorizes a high resistance state and a low resistance state and switches between the high resistance state and the low resistance state by an application of a voltage; a transistor 12 including a drain terminal connected to one terminal of the resistance memory element 14 and a source terminal connected to a reference voltage; and a transistor 16 including a source terminal connected to the other terminal of the resistance memory element 14. When a write voltage is applied to the resistance memory element 14 via the transistor 16 to switch the resistance memory element 14 from the low resistance state to the high resistance state, a voltage to be applied to the resistance memory element 14 is controlled at a value which is not less than a reset voltage of the resistance memory element 14 and less than a set voltage of the resistance memory element 14 by controlling a voltage to be applied to a gate terminal of the transistor 16 so as to be set at a value which is not less than a total of the reset voltage and a threshold voltage of the transistor 16 and is less than a total of the set voltage and the threshold voltage of the transistor 16.

摘要翻译： 一种写入半导体存储器件的方法，其包括存储高电阻状态和低电阻状态的电阻存储元件14，并通过施加电压在高电阻状态和低电阻状态之间切换; 包括连接到电阻存储元件14的一个端子的漏极端子和与参考电压相连的源极端子的晶体管12; 以及晶体管16，其包括连接到电阻存储元件14的另一端的源极端子。当经由晶体管16将写入电压施加到电阻存储元件14时，将电阻存储元件14从低电阻状态切换到 高电阻状态时，施加到电阻存储元件14的电压被控制为不小于电阻存储元件14的复位电压并且小于电阻存储元件14的设定电压的值，通过控制电压 施加到晶体管16的栅极端子，以便被设置为不小于复位电压和晶体管16的阈值电压的总和并且小于设定电压的总和的值，并且 晶体管16的阈值电压。

公开(公告)号：US07924601B2

公开(公告)日：2011-04-12

申请号：US12561797

申请日：2009-09-17

申请人： Masaki Aoki

发明人： Masaki Aoki

IPC分类号： G11C11/00

CPC分类号： G11C13/0007 ,  G11C13/0069 ,  G11C2213/31 ,  G11C2213/79

摘要： An ReRAM of the present invention includes a high speed write-in region and a main memory region, only memory cells designated to have the storage state out of the memory cells corresponded to data are set to the storage state in the high speed write-in region. The data written in the memory cell array are transferred to the main memory region, the memory cells of the memory cell array corresponded to the data transferred from the high speed write-in region are reset to the no-storage state in the main memory region, only the memory cells designated to have the storage state out of the memory cells are set, and all memory cells are reset to the no-storage state, or the initial state, in the high speed write-in region.

摘要翻译： 本发明的ReRAM包括高速写入区域和主存储区域，仅将指定为具有对应于数据的存储单元中的存储状态的存储单元设置为高速写入中的存储状态 地区。 写入存储单元阵列的数据被传送到主存储区域，对应于从高速写入区传送的数据的存储单元阵列的存储单元被复位到主存储区域中的非存储状态 只有存储单元被指定为具有存储状态的存储单元才被设置，并且所有存储单元都被复位到高速写入区域中的无存储状态或初始状态。

公开(公告)号：US20100157655A1

公开(公告)日：2010-06-24

申请号：US12561797

申请日：2009-09-17

申请人： Masaki Aoki

发明人： Masaki Aoki

IPC分类号： G11C11/00 ,  G11C8/00 ,  G11C7/00

CPC分类号： G11C13/0007 ,  G11C13/0069 ,  G11C2213/31 ,  G11C2213/79

摘要： An ReRAM of the present invention includes a high speed write-in region and a main memory region, only memory cells designated to have the storage state out of the memory cells corresponded to data are set to the storage state in the high speed write-in region. The data written in the memory cell array are transferred to the main memory region, the memory cells of the memory cell array corresponded to the data transferred from the high speed write-in region are reset to the no-storage state in the main memory region, only the memory cells designated to have the storage state out of the memory cells are set, and all memory cells are reset to the no-storage state, or the initial state, in the high speed write-in region.

摘要翻译： 本发明的ReRAM包括高速写入区域和主存储区域，仅将指定为具有对应于数据的存储单元中的存储状态的存储单元设置为高速写入中的存储状态 地区。 写入存储单元阵列的数据被传送到主存储区域，对应于从高速写入区传送的数据的存储单元阵列的存储单元被复位到主存储区域中的非存储状态 只有存储单元被指定为具有存储状态的存储单元才被设置，并且所有存储单元都被复位到高速写入区域中的无存储状态或初始状态。

公开(公告)号：US07613035B2

公开(公告)日：2009-11-03

申请号：US12135529

申请日：2008-06-09

申请人： Masaki Aoki

发明人： Masaki Aoki

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

摘要： A magnetic memory device includes a memory cell including magnetoresistance effect elements MTJ1, MTJ2 and a select transistor connected to the connection node of the magnetoresistance effect elements MTJ1, MTJ2, a first signal line extended in a first direction and connected to the magnetoresistance effect element MTJ1, a second signal line extended in the first direction and connected to the magnetoresistance effect element MTJ2, and a third signal line extended in a second direction and crossing the first signal line in a region where the magnetoresistance effect element MTJ1 is formed and crossing the second signal line in a region where the magnetoresistance effect element MTJ2 is formed. When memory information is written into the memory cell, the memory information to be memorized is switched by directions of write currents to be flowed to the first and the second signal lines.

摘要翻译： 磁存储器件包括存储单元，其包括磁阻效应元件MTJ1，MTJ2和连接到磁阻效应元件MTJ1，MTJ2的连接节点的选择晶体管，第一信号线在第一方向上延伸并连接到磁阻效应元件MTJ1 在第一方向上延伸并连接到磁阻效应元件MTJ2的第二信号线和在第二方向上延伸的第三信号线，并且在形成有磁阻效应元件MTJ1的区域中与第一信号线交叉并与第二信号线交叉， 形成磁阻效应元件MTJ2的区域的信号线。 当将存储器信息写入存储单元时，要存储的存储器信息通过要流向第一和第二信号线的写入电流的方向来切换。

公开(公告)号：US07548450B2

公开(公告)日：2009-06-16

申请号：US11812294

申请日：2007-06-18

申请人： Masaki Aoki

发明人： Masaki Aoki

IPC分类号： G11C11/00 ,  G11C7/02

CPC分类号： G11C11/16 ,  G11C2213/78 ,  G11C2213/79

摘要： The magnetic memory device comprises: a memory cell including two magnetoresistive effect elements serially connected to each other, and a select transistor connected to a connection node between the two magnetic resistant devices, a bit line connected to the connection node of the magnetoresistive effect elements via the select transistor, and a read circuit for reading information memorized in the magnetoresistive effect elements, based on a voltage of the connection node outputted to the bit line.

摘要翻译： 磁存储器件包括：包括彼此串联连接的两个磁阻效应元件的存储单元，以及连接到两个磁阻器件之间的连接节点的选择晶体管，连接到磁阻效应元件的连接节点的位线 选择晶体管和用于读取存储在磁阻效应元件中的信息的读取电路，基于输出到位线的连接节点的电压。

公开(公告)号：US07172482B2

公开(公告)日：2007-02-06

申请号：US10943697

申请日：2004-09-17

申请人： Hiroyuki Kado ,  Mitsuhiro Ohtani ,  Masaki Aoki ,  Kanako Miyashita

发明人： Hiroyuki Kado ,  Mitsuhiro Ohtani ,  Masaki Aoki ,  Kanako Miyashita

IPC分类号： H01J9/44

CPC分类号： H01J9/38 ,  H01J9/241 ,  H01J9/261 ,  H01J9/385 ,  H01J11/12 ,  H01J11/36 ,  H01J11/42 ,  H01J11/48 ,  H01J11/54 ,  H01J2211/48

摘要： A PDP with superior light-emitting characteristics and color reproduction is achieved by setting the chromaticity coordinate y (the CIE color specification) of light to 0.08 or less, more preferably to 0.07 or less, or 0.06 or less, enabling the color temperature of light to be set to 7,000K or more, and further to 8,000K or more, 9,000K or more, or 10,000K or more. The PDP is manufactured by a method in which the processes for heating the fluorescent substances such as the fluorescent substance baking, sealing material temporary baking, bonding, and exhausting processes are performed in the dry gas atmosphere, or in an atmosphere in which a dry gas is circulated at a pressure lower than the atmospheric pressure. This PDP is also manufactured by: a method in which after the front and back panels are bonded together, the exhausting process for exhausting gas from the inner space between panels is started while the panels are not cooled to room temperature; or a method in which after the front and back panels are temporarily baked, the process for bonding the panels is started while the panels are not cooled to room temperature. This reduces the time and energy required for heating, resulting in reduction of manufacturing cost.

摘要翻译： 通过将光的色度坐标y（CIE颜色规格）设定为0.08以下，更优选为0.07以下或0.06以下，能够实现具有优异的发光特性和色彩再现的PDP，能够实现光的色温 设定为7000K以上，进一步为8,000K以上，9000K以上，10,000K以上。 PDP的制造方法是，在干燥气体气氛中，或在干燥气体的气氛中进行荧光物质烘烤，密封材料的暂时烘烤，粘合，排出等荧光物质的加热处理 在低于大气压的压力下循环。 该PDP也通过以下方法制造：其中在前面板和后面板结合在一起之后，在面板未冷却至室温的同时开始从面板之间的内部空间排出气体的排气过程; 或者在将前面板和后面板暂时烘烤之后，在面板未冷却至室温的同时开始接合面板的工序。 这减少了加热所需的时间和能量，从而降低制造成本。

公开(公告)号：US20060139991A1

公开(公告)日：2006-06-29

申请号：US11081524

申请日：2005-03-17

申请人： Masaki Aoki

发明人： Masaki Aoki

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C2213/78 ,  G11C2213/79

摘要： The magnetic memory device comprises: a memory cell including two magnetoresistive effect elements serially connected to each other, and a select transistor connected to a connection node between the two magnetic resistant devices, a bit line connected to the connection node of the magnetoresistive effect elements via the select transistor, and a read circuit for reading information memorized in the magnetoresistive effect elements, based on a voltage of the connection node outputted to the bit line.

公开(公告)号：US07057342B2

公开(公告)日：2006-06-06

申请号：US10481801

申请日：2002-07-02

申请人： Masaki Aoki ,  Hiroyuki Yonehara ,  Morio Fujitani

发明人： Masaki Aoki ,  Hiroyuki Yonehara ,  Morio Fujitani

IPC分类号： H01J17/00

CPC分类号： C03C8/04 ,  C03C4/16 ,  C03C8/08 ,  C03C8/16 ,  C03C17/04 ,  H01J11/12 ,  H01J11/38

摘要： A plasma display panel capable of restricting the yellowing of a dielectric layer and the occurrence of dielectric breakdown, wherein glass constituting a dielectric layer uses glass containing a metal oxide MO2 capable of a trivalent or tetravalent-ion formation in glass. Accordingly, even when Ag is ionized from an electrode consisting essentially of Ag to diffuse to a dielectric layer, Ag does not aggregate to be formed into a colloid with an ionized state kept. Therefore, yellowing and dielectric breakdown caused by Ag turning to colloid can be restricted.

摘要翻译： 能够限制电介质层变黄和发生电介质击穿的等离子体显示面板，其中构成电介质层的玻璃使用含有三价或四价离子形成金属氧化物MO 2的玻璃 在玻璃。 因此，即使当Ag从基本上由Ag组成的电极离子化以扩散到电介质层时，Ag也不会聚集形成保持电离状态的胶体。 因此，可以限制Ag转向胶体引起的泛黄和介电击穿。

公开(公告)号：US20060055324A1

公开(公告)日：2006-03-16

申请号：US10535951

申请日：2004-09-17

申请人： Kazuyuki Hasegawa ,  Kaname Mizokami ,  Yoshinao Oe ,  Masaki Aoki

发明人： Kazuyuki Hasegawa ,  Kaname Mizokami ,  Yoshinao Oe ,  Masaki Aoki

IPC分类号： H01J17/49

CPC分类号： H01J11/40 ,  G09G3/293 ,  G09G3/294 ,  H01J11/12

摘要： A plasma display panel includes a first substrate and a second substrate facing each other to provide a discharge space between the first substrate and the second substrate, a scan electrode and a sustain electrode both provided on the first substrate, a dielectric layer for covering the scan electrode and the sustain electrode, and a protective layer provided on the dielectric layer. The protective layer includes MgO, at least one element of Si, Ge, C and Sn, and at least one element of fourth, fifth, sixth and seventh group elements of a periodic table. This plasma display panel performs stable discharge characteristics, such as a driving voltage, thereby displaying an image stably.

摘要翻译： 等离子体显示面板包括第一基板和第二基板，其彼此面对以在第一基板和第二基板之间提供放电空间，扫描电极和维持电极均设置在第一基板上，用于覆盖扫描的介电层 电极和维持电极，以及设置在电介质层上的保护层。 保护层包括MgO，Si，Ge，C和Sn中的至少一种元素，以及周期表的第四，第五，第六和第七族元素的至少一种元素。 该等离子体显示面板执行稳定的放电特性，例如驱动电压，从而稳定地显示图像。