摘要:
A high S/N ratio, stable, and high read rate photoelectric conversion device is formed by the same process as that for a TFT in a photoelectric conversion apparatus, and includes a photoelectric conversion device having a first electrode layer, a semiconductor layer, and a second electrode layer, first and second switch devices each having first and second main electrodes, first and second power sources, and a reading circuit, where the first electrode layer is electrically connected to the first main electrode, the second electrode layer is electrically connected to a power source, and the second main electrode is electrically connected to the reading circuit. The switch device is turned on in refresh driving for applying an electric field from the power source to the second electrode layer in a direction for guiding carriers from the semiconductor layer to the second electrode layer, thereby fixing a potential on a first electrode layer side of the photoelectric conversion device.
摘要:
A semiconductor device with the trench isolation structure is provided, in which the leakage current problem does not occur. This device is comprised of a semiconductor substrate, an isolation trench formed in a surface region of the substrate and filled with first and second isolation dielectrics, an interlayer dielectric layer formed on the surface region of the substrate to cover the isolation trench, and a conductive layer formed on the interlayer dielectric layer to be overlapped with the isolation trench. The interlayer dielectric layer has a contact hole located near the isolation trench. The contact hole is formed by etching. The conductive layer is contacted with and electrically connected to a region of the substrate through the contact hole of the interlayer dielectric layer. The first isolation dielectric serves as a primary insulator. The second isolation dielectric serves as a secondary insulator. The first isolation dielectric has a pair of depressions, each having one side contiguous with one of the pair of top corners of the isolation trench. The pair of depressions of the first isolation dielectric are filled with the second isolation dielectric. The second dielectric is lower in etch rate than that of the first dielectric in the process for forming the contact hole.
摘要:
A color filter is laminated via a resin layer on an electroluminescence device. The resin layer includes silicone resin as its main ingredient while having a thickness of 2 to 100 .mu.m. Thereby, possible color dislocation and reduction of the angle of visibility attributed to the gap between the electroluminescence device and the color filter are prevented. Furthermore, possible damage, dielectric breakdown, pixel dropout, and line defect due to the contact between the electroluminescence device and the color filter are reduced. A surface of the resin layer is changed in condition to make the resin layer have a lipophilic property to facilitate application of a material of the color filter thereto.
摘要:
A vapor deposition apparatus for depositing thin film on substrates in which solid starting materials are used. In this apparatus, a carrier gas flows up and down in the same direction as gas convection, such that the effect of gas convection is minimized and film thickness and impurity concentration are uniform over the substrate surface. This uniformity is achieved by orienting a main reaction tube in a vertical direction, attaching two branch reaction tubes at the top of the main reaction tube, and venting carrier gas out the bottom of the main reaction tube. Alternately, the main reaction tube can be oriented horizontally, with the substrates being carried on a holder within a container having pores on its top and bottom.
摘要:
A thin film EL displaying apparatus includes a first thin film EL element and a second thin film EL element. Each element is composed of an EL layer sandwiched between a pair of upper and lower electrodes, a first and a second substrates provided respectively with the first and the second thin film EL elements, and an insulating film on the upper and lower surfaces on which conductive films for leads are formed. The first and the second substrates are laminated in a manner that the first and the second thin film EL elements face each other and the insulating films are sandwiched therein. The insulating film is disposed such that one end of each of the conductive films on upper and lower surface thereof is brought in contact with, and is electrically connected to the upper electrode or lower electrode of the first EL element and the respectively corresponding electrode of the second EL elements. The other end of each of the conductive films can be connected to an external driving circuit.
摘要:
A thin film EL device having a double-insulated structure and comprising an emitting layer made of an alkaline-earth sulfide as its host material and doped with Eu.sup.2+ for providing luminescent centers. The emitting layer has a Eu concentration of 0.15 to 0.75 atm. % and a controlled thickness of at least 1.3 .mu.m to impart hysteresis to the brightness vs. applied voltage characteristics of the device.
摘要:
A thin film electroluminescence device comprising an electrode layer, an emitting layer and an electrode layer formed on a substrate one over another, and an insulating layer optionally interposed between the three layers, the emitting layer being made of CaS serving as a host material and doped with Eu.sup.2+ providing luminescent centers.The emitting layer comprising a novel combination of host material and luminescent center produces a red electroluminescence with a high brightness.
摘要:
An ultrasonic probe (102) which has high propagation efficiency of ultrasound and can obtain a high resolution ultrasonic diagnostic image. The ultrasonic probe (102) includes an ultrasonic transducer including: a piezoelectric body (208) which generates ultrasound; and a first matching layer (101) which is disposed in a predetermined direction as seen from the piezoelectric body (208) and is for performing acoustic matching between the piezoelectric body (208) and a subject. The first matching layer (101) includes a plurality of matching regions (101a, 101b, 101c) which have a uniform thickness in the predetermined direction, are arranged in a direction perpendicular to the predetermined direction, and include at least two matching regions having frequency characteristics of ultrasound transmittance that are different from each other.
摘要:
An X-ray imaging apparatus includes a multi X-ray source which includes a plurality of X-ray focuses to generate X-rays by irradiating X-ray targets with electron beams, a detector which detects X-rays which have been emitted from the multi X-ray source and have reached a detection surface, and a moving mechanism for moving the multi X-ray source within a plane facing the detection surface. The X-ray imaging apparatus acquires a plurality of X-ray detection signals from the detector by causing the multi X-ray source to perform X-ray irradiation while shifting the positions of a plurality of X-ray focuses which the detector has relative to the detection surface by moving the multi X-ray source using the moving mechanism. The apparatus then generates an X-ray projection image based on the plurality of X-ray detection signals acquired by the detector.
摘要:
An X-ray imaging apparatus is provided with a multi X-ray source and a collimator in which a plurality of slits for X-rays to pass through are two-dimensionally formed, the size and position of the slits being adjustable. A control unit, as a first control mode, controls the size and position of the slits to move an examination region in parallel, when an X-ray source is changed to a different X-ray source, such that the examination directions are parallel before and after the change. Also, the control unit, as a second control mode, controls the size and position of the slits to rotate the examination direction, when an X-ray source is changed to a different X-ray source, such that the center of the examination regions is the same before and after the change.