公开(公告)号：US20210143165A1

公开(公告)日：2021-05-13

申请号：US17125639

申请日：2020-12-17

Applicant: Micron Technology, Inc.

Inventor： Kunal R. Parekh ,  Justin B. Dorhout ,  Nancy M. Lomeli

IPC: H01L27/11556 ,  G11C16/08 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11519 ,  H01L29/788 ,  H01L27/11524

Abstract: Some embodiments include an assembly having channel material structures extending upwardly from a conductive structure. Anchor structures are laterally offset from the channel material structures and penetrate into the conductive structure to a depth sufficient to provide mechanical stability to at least a portion of the assembly. The conductive structure may include a first conductive material over a second conductive material, and may be a source line of a three-dimensional NAND configuration. Some embodiments include methods of forming assemblies to have channel material structures and anchor structures.

公开(公告)号：US20210125861A1

公开(公告)日：2021-04-29

申请号：US16667733

申请日：2019-10-29

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Jiewei Chen ,  Nancy M. Lomeli

IPC: H01L21/768 ,  H01L27/11556 ,  H01L27/11582 ,  G11C5/02

Abstract: A method of forming a microelectronic device comprises forming a stack structure comprising insulative structures and additional insulative structures vertically alternating with the insulative structures. Apertures are formed to extend to surfaces of the insulative structures at different depths than one another within the stack structure. Dielectric liner structures are formed within the apertures. Sacrificial structures are formed within portions of the apertures remaining unoccupied by the dielectric liner structures. Upper portions of the sacrificial structures are replaced with capping structures. Portions of the insulative structures and remaining portions of the sacrificial structures are replaced with electrically conductive material. Microelectronic devices and electronic systems are also described.

公开(公告)号：US20210013228A1

公开(公告)日：2021-01-14

申请号：US17032384

申请日：2020-09-25

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Nancy M. Lomeli ,  Justin B. Dorhout ,  Damir Fazil

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11573 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11556

Abstract: Device, systems, and structures include a stack of vertically-alternating tiers of materials arranged in one or more decks of tiers. A channel opening, in which a channel pillar may be formed, extends through the stack. The pillar includes a “shoulder portion” extending laterally into an “undercut portion” of the channel opening, which undercut portion is defined along at least a lower tier of at least one of the decks of the stack.

公开(公告)号：US10825828B2

公开(公告)日：2020-11-03

申请号：US16157927

申请日：2018-10-11

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Nancy M. Lomeli ,  Justin B. Dorhout ,  Damir Fazil

IPC: H01L27/115 ,  H01L29/792 ,  H01L29/66 ,  H01L27/11582 ,  H01L27/11524 ,  H01L27/11573 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11556

Abstract: Device, systems, and structures include a stack of vertically-alternating tiers of materials arranged in one or more decks of tiers. A channel opening, in which a channel pillar may be formed, extends through the stack. The pillar includes a “shoulder portion” extending laterally into an “undercut portion” of the channel opening, which undercut portion is defined along at least a lower tier of at least one of the decks of the stack.

公开(公告)号：US20200119038A1

公开(公告)日：2020-04-16

申请号：US16157927

申请日：2018-10-11

Applicant: Micron Technology, Inc.

Inventor： John D. Hopkins ,  Nancy M. Lomeli ,  Justin B. Dorhout ,  Damir Fazil

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11573

Abstract: Device, systems, and structures include a stack of vertically-alternating tiers of materials arranged in one or more decks of tiers. A channel opening, in which a channel pillar may be formed, extends through the stack. The pillar includes a “shoulder portion” extending laterally into an “undercut portion” of the channel opening, which undercut portion is defined along at least a lower tier of at least one of the decks of the stack.

公开(公告)号：US20200013792A1

公开(公告)日：2020-01-09

申请号：US16578042

申请日：2019-09-20

Applicant: Micron Technology, Inc.

Inventor： Kunal R. Parekh ,  Justin B. Dorhout ,  Nancy M. Lomeli

IPC: H01L27/11556 ,  G11C16/08 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11519 ,  H01L29/788 ,  H01L27/11524

Abstract: Some embodiments include an assembly having channel material structures extending upwardly from a conductive structure. Anchor structures are laterally offset from the channel material structures and penetrate into the conductive structure to a depth sufficient to provide mechanical stability to at least a portion of the assembly. The conductive structure may include a first conductive material over a second conductive material, and may be a source line of a three-dimensional NAND configuration. Some embodiments include methods of forming assemblies to have channel material structures and anchor structures.

公开(公告)号：US10446578B1

公开(公告)日：2019-10-15

申请号：US16111584

申请日：2018-08-24

Applicant: Micron Technology, Inc.

Inventor： Collin Howder ,  Justin B. Dorhout ,  Anish A. Khandekar ,  Mark W. Kiehlbauch ,  Nancy M. Lomeli

IPC: H01L27/11582 ,  H01L27/11521 ,  H01L27/11556 ,  H01L21/02 ,  H01L27/11568 ,  H01L21/28

Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a lower stack comprising vertically-alternating insulative tiers and wordline tiers. Lower channel openings are in the lower stack. A bridge is epitaxially grown that covers individual of the lower channel openings. A lower void space is beneath individual of the bridges in the individual lower channel openings. An upper stack is formed above the lower stack. The upper stack comprises vertically-alternating insulative tiers and wordline tiers. Upper channel openings are formed into the upper stack to the individual bridges to form interconnected channel openings individually comprising one of the individual lower channel openings and individual of the upper channel openings. The interconnected channel openings individually have one of the individual bridges there-across. The individual bridges are penetrated through to uncover individual of the lower void spaces. Transistor channel material is formed in an upper portion of the interconnected channel openings elevationally along the vertically-alternating tiers in the upper stack.

公开(公告)号：US10446566B2

公开(公告)日：2019-10-15

申请号：US15843509

申请日：2017-12-15

Applicant: Micron Technology, Inc.

Inventor： Kunal R. Parekh ,  Justin B. Dorhout ,  Nancy M. Lomeli

IPC: H01L27/115 ,  H01L29/78 ,  G11C16/04 ,  H01L27/11556 ,  G11C16/08 ,  H01L27/1157 ,  H01L27/11582 ,  H01L27/11565 ,  H01L27/11519 ,  H01L29/788 ,  H01L27/11524

Abstract: Some embodiments include an assembly having channel material structures extending upwardly from a conductive structure. Anchor structures are laterally offset from the channel material structures and penetrate into the conductive structure to a depth sufficient to provide mechanical stability to at least a portion of the assembly. The conductive structure may include a first conductive material over a second conductive material, and may be a source line of a three-dimensional NAND configuration. Some embodiments include methods of forming assemblies to have channel material structures and anchor structures.

公开(公告)号：US10424596B2

公开(公告)日：2019-09-24

申请号：US15852955

申请日：2017-12-22

Applicant: Micron Technology, Inc.

Inventor： Nancy M. Lomeli ,  Tom George ,  Jordan D. Greenlee ,  Scott M. Pook ,  John Mark Meldrim

IPC: H01L27/11582 ,  H01L29/10 ,  H01L23/535 ,  G11C16/04 ,  H01L21/768 ,  H01L21/02 ,  H01L27/11556 ,  H01L29/792 ,  H01L29/788

Abstract: Some embodiments include a conductive structure of an integrated circuit. The conductive structure includes an upper primary portion, with the upper primary portion having a first conductive constituent configured as a container. The container has a bottom, and a pair of sidewalls extending upwardly from the bottom. An interior region of the container is over the bottom and between the sidewalls. The upper primary portion includes a second conductive constituent configured as a mass filling the interior region of the container. The second conductive constituent is a different composition than the first conductive constituent. One or more conductive projections join to the upper primary portion and extend downwardly from the upper primary portion. Some embodiments include assemblies comprising memory cells over conductive structures. Some embodiments include methods of forming conductive structures.

公开(公告)号：US20190189629A1

公开(公告)日：2019-06-20

申请号：US15843509

申请日：2017-12-15

Applicant: Micron Technology, Inc.

Inventor： Kunal R. Parekh ,  Justin B. Dorhout ,  Nancy M. Lomeli

IPC: H01L27/11556 ,  G11C16/08 ,  H01L27/1157 ,  G11C16/04 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/11519 ,  H01L29/788 ,  H01L27/11582

CPC classification number: H01L27/11556 ,  G11C16/0483 ,  G11C16/08 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/7883

Abstract: Some embodiments include an assembly having channel material structures extending upwardly from a conductive structure. Anchor structures are laterally offset from the channel material structures and penetrate into the conductive structure to a depth sufficient to provide mechanical stability to at least a portion of the assembly. The conductive structure may include a first conductive material over a second conductive material, and may be a source line of a three-dimensional NAND configuration. Some embodiments include methods of forming assemblies to have channel material structures and anchor structures.