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    Thin films measurement method and system
    101.
    发明授权
    Thin films measurement method and system 有权
    薄膜测量方法和系统

    公开(公告)号：US07327476B2

    公开(公告)日：2008-02-05

    申请号：US10606199

    申请日：2003-06-26

    Applicant: Yoel Cohen ,  Moshe Finarov ,  Klara Vinokur

    Inventor： Yoel Cohen ,  Moshe Finarov ,  Klara Vinokur

    IPC: G01B11/28

    CPC classification number: G01B11/0625 ,  G01B11/0683 ,  H01L22/12

    Abstract: A method and system are presented for use in controlling the processing of a structure. First measured data is provided being indicative of at least one of the following: a thickness (d2) of at least one layer (L2) of the structure W in at least selected sites of the structure prior to the processing of the structure, and a surface profile of the structure prior to said processing. An optical measurement is applied to at least the selected sites of the structure after said processing and second measured data is generated being indicative of at least one of the following: a thickness of the processed structure (d′) and a surface profile of the processed structure, The second measured data is analyzed by interpreting it using the first measured data to thereby determine a thickness (d′1 or d′2) of at least one layer of the processed structure. This determined thickness is thus indicative of the quality of said processing.

    Abstract translation: 提出了一种用于控制结构处理的方法和系统。 提供了首先测量的数据，其指示以下至少之一：结构W的至少一层（L 2 2 N）的厚度（L 2 2 N） 在结构处理之前的结构的最少选择的位置，以及在所述处理之前的结构的表面轮廓。 在所述处理之后，对至少所述结构的所选位置进行光学测量，并且生成第二测量数据，以指示以下至少之一：处理结构（d'）的厚度和所处理的结构的表面轮廓 结构，通过使用第一测量数据解释第二测量数据来分析第二测量数据，从而确定至少一层的厚度（d'1或更大或更小） 处理结构。 因此，所确定的厚度表示所述处理的质量。

    Apparatus for integrated monitoring of wafers and for process control in semiconductor manufacturing and a method for use thereof
    103.
    发明授权
    Apparatus for integrated monitoring of wafers and for process control in semiconductor manufacturing and a method for use thereof 有权
    用于半导体制造中的晶片的集成监视和过程控制的装置及其使用方法

    公开(公告)号：US07255748B2

    公开(公告)日：2007-08-14

    申请号：US10842479

    申请日：2004-05-11

    Applicant: Moshe Finarov

    Inventor： Moshe Finarov

    IPC: C23C16/00 ,  H01L21/306 ,  C23F1/00 ,  G01N21/00

    CPC classification number: H01L21/67253 ,  H01L21/681

    Abstract: The present invention relates to an integrated apparatus for monitoring wafers and for process control in the semiconductor manufacturing process, by means of at least two different measurements that can be installed inside any part of the semiconductor production line, i.e., inside the photocluster equipment, the CVD equipment or the CMP equipment. The apparatus comprises a measuring unit for performing at least one optical measurement in predetermined sites on said wafer, illumination sources for illuminating said wafer via measuring unit, supporting means for holding, rotating and translating the wafer and a control unit. The measuring unit comprises: at least two measuring sub-units, one of them being normal-incidence optical measuring system.

    Abstract translation: 本发明涉及一种用于在半导体制造过程中监视晶片和过程控制的集成装置，借助于可以安装在半导体生产线的任何部分内的至少两种不同的测量，即在光集群设备内部， CVD设备或CMP设备。 该装置包括用于在所述晶片上的预定位置执行至少一次光学测量的测量单元，用于经由测量单元照亮所述晶片的照明源，用于保持，旋转和平移晶片的支撑装置和控制单元。 测量单元包括：至少两个测量子单元，其中一个是正入射光学测量系统。

    Method and system for endpoint detection
    104.
    发明授权
    Method and system for endpoint detection 有权
    端点检测方法和系统

    公开(公告)号：US07195540B2

    公开(公告)日：2007-03-27

    申请号：US10800611

    申请日：2004-03-15

    Applicant: Moshe Finarov

    Inventor： Moshe Finarov

    IPC: B24B49/12

    CPC classification number: B05C11/1005 ,  B24B37/013 ,  B24B49/04 ,  B24B49/12

    Abstract: A method and system are presented for monitoring a process sequentially applied to a stream of substantially identical articles by a processing tool, so as to terminate the operation of the processing tool upon detecting an end-point signal corresponding to a predetermined value of a desired parameter of the article being processed. The article is processed with the processing tool. Upon completing the processing in response to the end-point signal generated by an end-point detector continuously operating during the processing of the article, integrated monitoring is applied to the processed article to measure the value of the desired parameter. The measured value of the desired parameter is analyzed to determine a correction value thereof to be used for adjusting the end-point signal corresponding to the predetermined value of the desired parameter for terminating the processing of the next article in the stream.

    Abstract translation: 提出了一种方法和系统，用于通过处理工具监视顺序地施加到基本上相同的物品流的处理，以便在检测到对应于期望参数的预定值的终点信号时终止处理工具的操作 的被处理物品。 文章用处理工具处理。 一旦响应由在物品处理过程中持续运行的端点检测器产生的终点信号完成处理，则将综合监控应用于经处理的物品以测量所需参数的值。 分析所需参数的测量值，以确定其用于调整对应于预定值的终点信号的校正值

    Lateral shift measurement using an optical technique
    105.
    发明申请
    Lateral shift measurement using an optical technique 有权
    使用光学技术的侧向位移测量

    公开(公告)号：US20070034816A1

    公开(公告)日：2007-02-15

    申请号：US11580997

    申请日：2006-10-16

    Applicant: Boaz Brill ,  Moshe Finarov ,  David Scheiner

    Inventor： Boaz Brill ,  Moshe Finarov ,  David Scheiner

    IPC: G01N21/86 ,  G01B11/00

    CPC classification number: G03F7/70633 ,  G01B11/14 ,  G01B11/27 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  H01L22/12

    Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements comprise at least two measurements with different polarization states of incident light, each measurement including illuminating eh measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between eth diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

    Abstract translation: 通过对样品中的测量部位进行光学测量来控制多层样品的制造期间层的对准。 测量部位包括两个分别位于两个不同层之间的衍射结构。 光学测量包括具有入射光的不同偏振态的至少两个测量，每个测量包括照射eh测量位置，以便通过另一个照射衍射结构之一。 测量位置的衍射特性表示了eth衍射结构之间的横向偏移。 对入射光的不同极化状态分析检测的衍射特性，以确定层之间现有的横向偏移。

    Method and system for thin film characterization
    106.
    发明申请
    Method and system for thin film characterization 有权
    薄膜表征的方法和系统

    公开(公告)号：US20060176494A1

    公开(公告)日：2006-08-10

    申请号：US11389297

    申请日：2006-03-27

    Applicant: Moshe Finarov

    Inventor： Moshe Finarov

    IPC: G01B11/28

    CPC classification number: G01N21/8422 ,  G01B11/0625 ,  G01N21/211 ,  G01N21/3563 ,  G01N21/9501

    Abstract: A method and system are presented for optical measurements in multi-layer structures to determine the properties of at least some of the layers. The structure is patterned by removing layer materials within a measurement site of the structure from the top layer to the lowermost layer of interests Optical measurements are sequentially applied to the layers, by illuminating a measurement area in the layer under measurements, when the layer material above said layer under measurements is removed, thereby obtaining measured data portions for the at least some of the layers, respectively. The properties of each of the at least some layers are calculated, by analyzing the measured data portion of the lowermost layer, and then sequentially interpreting the measured data portions of all the other layers towards the uppermost layer, while utilizing for each layer the calculation results of the one or more underlying layers.

    Abstract translation: 提出了一种用于多层结构中的光学测量的方法和系统，以确定至少一些层的性质。 通过将结构的测量部位内的层材料从顶层移到最下层来去除结构图案，通过在上述层材料上方照射测量区域上的测量区域，顺序地将各种层次上的光学测量值施加到层上 去除所测量的所述层，从而分别获得所述至少一些层的测量数据部分。 通过分析最下层的测量数据部分，然后依次将所有其它层的测量数据部分顺序地解释为最上层，同时为每个层使用计算结果来计算每个至少一些层的属性 的一个或多个下层。

    Method and system for measuring thin films
    109.
    发明申请
    Method and system for measuring thin films 有权
    测量薄膜的方法和系统

    公开(公告)号：US20050002624A1

    公开(公告)日：2005-01-06

    申请号：US10494577

    申请日：2002-11-10

    Applicant: Moshe Finarov

    Inventor： Moshe Finarov

    IPC: G01B11/06 ,  G02B6/04

    CPC classification number: G01B11/0616

    Abstract: An optical system is presented for use in a measurement system (100) for use in measurements of thin films of a workpiece (W), the system comprising an optical assembly (14), comprising illuminator assembly, a detector assembly, and a light directing assembly (FA-OF) for directing illuminating light to a plurality of measurement sites in the workpiece (W) arranged in an array of substantially concentric ring-like regions, such that an area defined by the measurement sites within one of the substantially concentric ring-like regions is substantially equal to that of the other substantially concentric ring-like region.

    Abstract translation: 光学系统被呈现用于测量系统（100）中，用于测量工件（W）的薄膜，所述系统包括光学组件（14），其包括照明器组件，检测器组件和光导向 组件（FA-OF），用于将照明光引导到布置成基本上同心的环状区域的阵列中的工件（W）中的多个测量位置，使得由基本上同心的环内的测量位置限定的区域 类似的区域基本上等于另一个基本上同心的环状区域的区域。

    Apparatus for integrated monitoring of wafers and for process control in semiconductor manufacturing and a method for use thereof
    110.
    发明授权
    Apparatus for integrated monitoring of wafers and for process control in semiconductor manufacturing and a method for use thereof 失效
    用于半导体制造中的晶片的集成监视和过程控制的装置及其使用方法

    公开(公告)号：US06733619B2

    公开(公告)日：2004-05-11

    申请号：US10193911

    申请日：2002-07-15

    Applicant: Moshe Finarov

    Inventor： Moshe Finarov

    IPC: C23F100

    CPC classification number: H01L21/67253 ,  H01L21/681

    Abstract: The present invention relates to an integrated apparatus for monitoring wafers and for process control in the semiconductor manufacturing process, by means of at least two different measurements that can be installed inside any part of the semiconductor production line, i.e., inside the photocluster equipment, the CVD equipment or the CMP equipment. The apparatus comprises a measuring unit for performing at least one optical measurement in predetermined sites on said wafer, illumination sources for illuminating said wafer via measuring unit, supporting means for holding, rotating and translating the wafer and a control unit. The measuring unit comprises: at least two measuring sub-units, one of them being normal-incidence optical measuring system.

    Abstract translation: 本发明涉及一种用于在半导体制造过程中监视晶片和过程控制的集成装置，借助于可以安装在半导体生产线的任何部分内的至少两种不同的测量，即在光集群设备内部， CVD设备或CMP设备。 该装置包括用于在所述晶片上的预定位置执行至少一次光学测量的测量单元，用于经由测量单元照亮所述晶片的照明源，用于保持，旋转和平移晶片的支撑装置和控制单元。 测量单元包括：至少两个测量子单元，其中一个是正入射光学测量系统。

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