公开(公告)号：US20140295261A1

公开(公告)日：2014-10-02

申请号：US14220354

申请日：2014-03-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE ,  Teppei OGUNI ,  Tatsuya TAKAHASHI ,  Takuya MIWA ,  Aya HITOTSUYANAGI

IPC: H01M10/0566 ,  H01M4/587 ,  H01M10/052

CPC classification number: H01M10/0566 ,  H01M4/5825 ,  H01M4/587 ,  H01M10/0525 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2300/0037

Abstract: An object is to provide an electrochemical device in which lithium deposition and reduction in battery capacity can be inhibited even when the concentration of a lithium salt in an electrolytic solution is lower than 1.0 M. Lithium deposition can be inhibited and lithium whiskers can be dissolved by applying an inversion pulse current for a short time more than once in a charging period of a secondary battery which deteriorates. By applying the inversion pulse current more than once, deterioration of a lithium-ion secondary battery due to repeated charging can be suppressed even when it is a secondary battery in which the concentration of a lithium salt in an electrolytic solution is lower than 1.0 M and therefore lithium is easily deposited.

Abstract translation: 本发明的目的是提供一种电化学装置，其中即使当电解液中的锂盐浓度低于1.0M时，锂沉积和电池容量的降低也可以被抑制。可以抑制锂沉积并且可以通过以下方式溶解锂晶须 在劣化的二次电池的充电期间，多次施加反转脉冲电流多次。 通过多次施加反转脉冲电流，即使是电解液中的锂盐浓度低于1.0M的二次电池，也能够抑制由于重复充电引起的锂离子二次电池的劣化， 因此易于沉积锂。

公开(公告)号：US20140241487A1

公开(公告)日：2014-08-28

申请号：US14185221

申请日：2014-02-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE ,  Kouhei TOYOTAKA

IPC: H01L27/12 ,  H01L29/786 ,  G11C19/28 ,  H01L29/24

CPC classification number: G11C19/28 ,  G02F1/136277 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/0297 ,  H01L27/1225 ,  H01L29/7869

Abstract: To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film.

Abstract translation: 提供具有高孔径比的半导体器件，并且包括具有高电荷电容的电容器。 提供具有窄边框的半导体器件。 衬底上的晶体管; 在其上提供晶体管的栅电极的表面上的第一导电膜; 在其上提供晶体管的一对电极的表面上的第二导电膜; 并且包括与第一导电膜和第二导电膜电连接的第一透光性导电膜。 第二导电膜与第二导电膜和第一导电膜之间的晶体管的栅极绝缘膜与第一导电膜重叠。

公开(公告)号：US20140240631A1

公开(公告)日：2014-08-28

申请号：US14184996

申请日：2014-02-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki SHISHIDO ,  Hiroyuki MIYAKE ,  Seiko INOUE ,  Kouhei TOYOTAKA ,  Koji KUSUNOKI

IPC: G02F1/1362

CPC classification number: G02F1/136286 ,  G02F1/136204 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/66

Abstract: Transistors each include a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A driver circuit portion includes first to third wirings formed in the same step as the gate electrode, fourth to sixth wirings formed in the same step as the source electrode and the drain electrode, a seventh wiring formed in the same step as a pixel electrode, a first region where the second wiring intersects with the fifth wiring, and a second region where the third wiring intersects with the sixth wiring. The first wiring is connected to the fourth wiring through the seventh wiring. A distance between the wirings in the second region is longer than that in the first region.

Abstract translation: 晶体管各自包括栅电极，栅电极上的栅极绝缘层，栅极绝缘层上的氧化物半导体层，以及氧化物半导体层上的源电极和漏电极。 驱动器电路部分包括以与栅电极相同的步骤形成的第一至第三布线，以与源电极和漏电极相同的步骤形成的第四至第六布线，与像素电极在相同步骤中形成的第七布线， 第二布线与第五布线相交的第一区域和第三布线与第六布线相交的第二区域。 第一布线通过第七布线连接到第四布线。 第二区域中的布线之间的距离比第一区域长。

公开(公告)号：US20140184172A1

公开(公告)日：2014-07-03

申请号：US14136503

申请日：2013-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Junpei MOMO ,  Hiroyuki MIYAKE ,  Kei TAKAHASHI

IPC: H02J7/00

CPC classification number: B60L11/1816 ,  B60L11/182 ,  G01R31/3606 ,  H01M4/625 ,  H01M10/0525 ,  H01M10/44 ,  H02J7/0052 ,  H02J7/0057 ,  H02J7/0068 ,  Y02E60/122 ,  Y02T10/7011

Abstract: An object is to inhibit a decrease in the capacity of a power storage device or to compensate the capacity, by adjusting or rectifying an imbalance between a positive electrode and a negative electrode, which is caused by decomposition of an electrolyte solution at the negative electrode. Provided is a charging method of a power storage device including a positive electrode using an active material that exhibits two-phase reaction, a negative electrode, and an electrolyte solution. The method includes the steps of, after constant current charging, performing constant voltage charging with a voltage that does not cause decomposition of the electrolyte solution until a charging current becomes lower than or equal to a lower current value limit; and after the constant voltage charging, performing additional charging with a voltage that causes decomposition of the electrolyte solution until a resistance of the power storage device reaches a predetermined resistance.

Abstract translation: 本发明的目的是通过调节或校正由负极上的电解质溶液分解引起的正极和负极之间的不平衡来抑制蓄电装置的容量的降低或补偿容量。 提供一种蓄电装置的充电方法，其包括使用表现出二相反应的活性物质的正极，负极和电解液。 该方法包括以下步骤：在恒流充电之后，以不会导致电解质溶液分解的电压进行恒压充电直到充电电流低于或等于较低的电流值极限; 并且在恒压充电之后，用导致电解质溶液分解的电压进行附加充电直到蓄电装置的电阻达到预定电阻。

公开(公告)号：US20140175433A1

公开(公告)日：2014-06-26

申请号：US14134284

申请日：2013-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hiroyuki MIYAKE

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1225 ,  H01L27/1259

Abstract: A semiconductor device in which the aperture ratio and which includes a capacitor with increased charge capacity is provided. A semiconductor device in which the number of masks used in a manufacturing process is reduced and the manufacturing costs are reduced is also provided. An impurity is contained in a light-transmitting semiconductor film so that the semiconductor film functions as one of a pair of electrodes in a capacitor. The other pair of electrodes is formed using a light-transmitting conductive film such as a pixel electrode. Further, a scan line and a capacitor line are provided on the same surface and in parallel to each other. An opening reaching the capacitor line and an opening reaching a conductive film which can be formed in the formation of a source electrode or a drain electrode of the transistor can be formed concurrently in an insulating film.

Abstract translation: 提供一种其中开口率并包括具有增加的电荷容量的电容器的半导体器件。 还提供了其中制造过程中使用的掩模的数量减少并且制造成本降低的半导体器件。 在透光半导体膜中含有杂质，使得半导体膜用作电容器中的一对电极之一。 另一对电极使用诸如像素电极的透光导电膜形成。 此外，扫描线和电容器线设置在相同的表面上并且彼此平行。 可以在绝缘膜中同时形成到达电容器线的开口和到达可形成晶体管的源电极或漏电极的导电膜的开口。

公开(公告)号：US20140078132A1

公开(公告)日：2014-03-20

申请号：US14089025

申请日：2013-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun KOYAMA ,  Hiroyuki MIYAKE

IPC: G09G3/36

CPC classification number: G09G3/3618 ,  G02F1/1345 ,  G06F3/0416 ,  G06F3/0421 ,  G06F3/044 ,  G09G3/3648 ,  G09G3/3655 ,  G09G3/3696 ,  G09G2300/0809 ,  G09G2310/04 ,  G09G2310/061 ,  G09G2310/08 ,  G09G2320/0209 ,  G09G2320/0219 ,  G09G2320/10 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2340/0435 ,  G09G2340/16 ,  G09G2354/00

Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

Abstract translation: 液晶显示装置包括具有端子部分的第一基板，开关晶体管，驱动电路部分和包括像素晶体管和多个像素的像素电路部分，第二基板设置有电连接到 通过开关晶体管的端子部分和像素电极与公共电极之间的液晶。 在将静止图像切换为运动图像的期间中，依次执行以下步骤：将公共电位提供给公共电极的第一步骤; 向驱动电路部供给电源电压的第2工序; 向所述驱动电路部提供时钟信号的第三步骤; 以及向所述驱动器电路部分提供起始脉冲信号的第四步骤。

公开(公告)号：US20140016056A1

公开(公告)日：2014-01-16

申请号：US13936239

申请日：2013-07-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO.,LTD.

Inventor： Hiroyuki MIYAKE ,  Yoshiharu HIRAKATA

IPC: G02F1/1368

CPC classification number: G09G3/3614 ,  G02F1/133345 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/134309 ,  G02F1/136213 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2201/40 ,  G02F2202/10 ,  G09G3/3648 ,  G09G2330/023 ,  H01L27/1225

Abstract: A liquid crystal display device whose power consumption is reduced while image quality is prevented from being degraded is provided. Further, a method for driving a liquid crystal display device whose power consumption is reduced while image quality is prevented from being degraded is provided. The liquid crystal display device includes a transistor whose leakage current in an off state is reduced and a liquid crystal element. The capacitance of a pixel satisfies the formula (1) and the formula (2).

Abstract translation: 提供一种在防止图像质量劣化的同时降低功耗的液晶显示装置。 此外，提供了一种用于驱动在防止图像质量劣化的同时降低功耗的液晶显示装置的方法。 液晶显示装置包括其截止状态下的漏电流减小的晶体管和液晶元件。 像素的电容满足式（1）和式（2）。

公开(公告)号：US20130235093A1

公开(公告)日：2013-09-12

申请号：US13775684

申请日：2013-02-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroyuki MIYAKE

IPC: G09G5/02

CPC classification number: G09G5/02 ,  G09G3/3607 ,  G09G3/3659 ,  G09G2310/0235 ,  G09G2310/0237 ,  G09G2310/063

Abstract: Degradation in image quality of a display image is prevented. A pixel portion which includes a plurality of pixel circuits in row and column directions is divided into a plurality of regions in the row direction. In each of the plurality of regions, operation in which data is written to the pixel circuits on a row basis and the pixel circuits to which the data is written are irradiated with light corresponding to the written data is performed a plurality of times in one frame period in such a manner that at least three single-color image data for displaying the three primary colors are written in one frame period; and black image data is written to the pixel circuits every time before any of the plurality of single-color image data is written to the pixel circuits in each of the plurality of regions.

Abstract translation: 防止显示图像的图像质量下降。 在行方向和列方向上包括多个像素电路的像素部分被划分成行方向上的多个区域。 在多个区域中的每个区域中，以与行数为基准的数据写入到像素电路的操作以及与写入的数据相对应的光照射写入数据的像素电路的操作在一个帧中被执行多次 周期，使得用于显示三原色的至少三个单色图像数据被写入一个帧周期; 并且在将多个单色图像数据中的任一个写入多个区域中的每一个的像素电路之前，每次将黑色图像数据写入像素电路。

公开(公告)号：US20130207102A1

公开(公告)日：2013-08-15

申请号：US13761399

申请日：2013-02-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki MIYAKE ,  Makoto KANEYASU

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/42384

Abstract: A transistor using an oxide semiconductor film is provided, the transistor having a small parasitic capacitance and including a back-gate electrode with a high controllability of threshold voltage. In the transistor using an oxide semiconductor film, the back-gate electrode overlaps with a drain electrode and does not overlap with a source electrode. By providing the back-gate electrode so as to overlap with the drain electrode and not to overlap with the source electrode, the operation speed of the transistor can be increased without decreasing the controllability of threshold voltage of the transistor as compared with the case where the back-gate electrode is provided so as to overlap with both the drain electrode and the source electrode.

Abstract translation: 提供了使用氧化物半导体膜的晶体管，该晶体管具有小的寄生电容，并且包括具有高阈值电压可控性的背栅电极。 在使用氧化物半导体膜的晶体管中，背栅电极与漏电极重叠，并且不与源电极重叠。 通过提供背栅电极以与漏电极重叠而不与源电极重叠，可以提高晶体管的操作速度，而不会降低晶体管的阈值电压的可控性，与 背栅电极被设置为与漏电极和源电极重叠。

公开(公告)号：US20250155930A1

公开(公告)日：2025-05-15

申请号：US19021485

申请日：2025-01-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Koji KUSUNOKI ,  Hiroyuki MIYAKE ,  Kazunori WATANABE

IPC: G06F1/16 ,  G06F3/041 ,  G06F3/044 ,  G06F3/045 ,  G06F3/0488 ,  G06F15/02 ,  H10K59/40 ,  H10K77/10

Abstract: To increase the detection sensitivity of a touch panel, provide a thin touch panel, provide a foldable touch panel, or provide a lightweight touch panel. A display element and a capacitor forming a touch sensor are provided between a pair of substrates. Preferably, a pair of conductive layers forming the capacitor each have an opening. The opening and the display element are provided to overlap each other. A light-blocking layer is provided between a substrate on the display surface side and the pair of conductive layers forming the capacitor.