中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

154 records (took 0.033 seconds)

    MEMORY ELEMENT AND MEMORY APPARATUS
    102.
    发明申请
    MEMORY ELEMENT AND MEMORY APPARATUS 审中-公开

    公开(公告)号：US20160225980A1

    公开(公告)日：2016-08-04

    申请号：US15095553

    申请日：2016-04-11

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: H01L43/10 ,  G11C11/16 ,  H01L43/08

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

    Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.

    Storage element, storage device, method of manufacturing storage element, and magnetic head
    103.
    发明授权
    Storage element, storage device, method of manufacturing storage element, and magnetic head 有权
    存储元件，存储装置，制造存储元件的方法和磁头

    公开(公告)号：US09397288B2

    公开(公告)日：2016-07-19

    申请号：US14299228

    申请日：2014-06-09

    Applicant: Sony Corporation

    Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

    Abstract: A storage element includes a layer structure, which includes a storage layer including magnetization perpendicular to the film surface, in which the magnetization direction is changed corresponding to information; a magnetization fixing layer including magnetization perpendicular to the film surface that becomes a reference for information stored on the storage layer; a tunnel barrier layer made from an oxide provided between the storage layer and the magnetization fixing layer; and a spin barrier layer made from an oxide provided contacting the surface of the opposite side of the storage layer to the surface contacting the tunnel barrier layer. A low resistance region is formed in a portion of the spin barrier layer formed with a predetermined set film thickness value and information storage on the storage layer is performed by changing the magnetization direction of the storage layer by current flowing in the stacking direction of the layer structure.

    Abstract translation: 存储元件包括层结构，其包括包含垂直于膜表面的磁化的存储层，其中磁化方向根据信息而改变; 磁化固定层，其包括垂直于膜表面的磁化，其成为存储在存储层上的信息的参考; 由设置在所述存储层和所述磁化固定层之间的氧化物制成的隧道势垒层; 以及由与存储层的相反侧的表面接触的氧化物形成的自旋势垒层与与隧道势垒层接触的表面。 在以预定的设定膜厚度值形成的自旋阻挡层的一部分中形成低电阻区域，并且通过在层的层叠方向上流动的电流改变存储层的磁化方向来进行存储层上的信息存储 结构体。

    STORAGE ELEMENT AND MEMORY
    104.
    发明申请
    STORAGE ELEMENT AND MEMORY 审中-公开
    存储元素和存储器

    公开(公告)号：US20160141491A1

    公开(公告)日：2016-05-19

    申请号：US15007382

    申请日：2016-01-27

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC: H01L43/10 ,  H01L43/02

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

    Abstract translation: 一种存储元件，包括存储层，其被配置为通过使用磁性材料的磁化状态来保存信息，在存储层的一侧上设置有钉扎磁化层，并具有隧道绝缘层，并且与磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。

    Memory element and memory device
    106.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US09293693B2

    公开(公告)日：2016-03-22

    申请号：US14446685

    申请日：2014-07-30

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC: H01L29/82 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

    Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

    Abstract translation: 公开了一种信息存储元件，包括：第一层，其包括具有垂直于膜面的磁化方向的铁磁层; 耦合到所述第一层的绝缘层; 以及耦合到与所述第一层相对的所述绝缘层的第二层，所述第二层包括固定磁化，以便能够用作所述第一层的参考。 第一层能够根据磁性材料的磁化状态存储信息，并且磁化状态被配置为通过自旋注入而改变。 第一层接收的有效抗磁场的大小小于第一层的饱和磁化量。

    Storage element and memory
    108.
    发明授权
    Storage element and memory 有权
    存储元件和存储器

    公开(公告)号：US09287493B2

    公开(公告)日：2016-03-15

    申请号：US14045055

    申请日：2013-10-03

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Tetsuya Yamamoto ,  Hiroyuki Ohmori ,  Kazutaka Yamane ,  Yuki Oishi ,  Hiroshi Kano

    IPC: H01L43/00 ,  H01L43/02 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

    Abstract: A storage element including a storage layer configured to hold information by use of a magnetization state of a magnetic material, with a pinned magnetization layer being provided on one side of the storage layer, with a tunnel insulation layer, and with the direction of magnetization of the storage layer being changed through injection of spin polarized electrons by passing a current in the lamination direction, so as to record information in the storage layer, wherein a spin barrier layer configured to restrain diffusion of the spin polarized electrons is provided on the side, opposite to the pinned magnetization layer, of the storage layer; and the spin barrier layer includes at least one material selected from the group composing of oxides, nitrides, and fluorides.

    Abstract translation: 一种存储元件，包括存储层，其被配置为通过使用磁性材料的磁化状态来保存信息，在存储层的一侧上设置有钉扎磁化层，并具有隧道绝缘层，并且与磁化方向 存储层通过沿层叠方向通过电流而注入自旋极化电子而改变，以便在存储层中记录信息，其中在侧面上设置有限制自旋极化电子扩散的自旋势垒层， 与存储层的钉扎磁化层相对; 并且自旋阻挡层包括从由氧化物，氮化物和氟化物组成的组中选择的至少一种材料。

    Magnetic memory element and magnetic memory device
    110.
    发明授权
    Magnetic memory element and magnetic memory device 有权
    磁存储元件和磁存储器件

    公开(公告)号：US09196333B2

    公开(公告)日：2015-11-24

    申请号：US14278716

    申请日：2014-05-15

    Applicant: Sony Corporation

    Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

    IPC: G11C11/00 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22

    CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: There is disclosed a memory element including a memory layer that has a magnetization and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, and a Ta film in contact with a face of the magnetization-fixed layer, the face of the magnetization-fixed layer is opposite to the insulating layer side.

    Abstract translation: 公开了一种存储元件，其包括存储层，该存储层具有相应于信息的磁化和磁化方向的变化; 具有磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录 相对于存储层执行信息，和与磁化固定层的表面接触的Ta膜，磁化固定层的表面与绝缘层侧相反。

Patent Agency Ranking