公开(公告)号：US20080062359A1

公开(公告)日：2008-03-13

申请号：US11898408

申请日：2007-09-12

申请人： Yuichi Inaba ,  Takumi Yamaguchi ,  Daisuke Ueda

发明人： Yuichi Inaba ,  Takumi Yamaguchi ,  Daisuke Ueda

IPC分类号： G02B1/10 ,  G02F1/1335 ,  H01J1/62

CPC分类号： G02B5/285 ,  G02F2001/133521 ,  H01L27/322 ,  H05B33/22

摘要： An optical interference filter whose major component is a film member. The film member includes a plurality of window regions arranged discretely in a surface direction selectively transmit, using an effect of optical interference, light having a waveband that substantially belongs to a visible spectrum, the plurality of window regions being arranged discretely in the surface direction, and one or more boundary regions selectively transmit, using the effect of the optical interference, light having a waveband that substantially belongs to an invisible spectrum excluding the visible spectrum, the one or more the boundary regions being located between adjacent window regions.

摘要翻译： 一种光学干涉滤光器，其主要成分是膜元件。 该薄膜构件包括多个沿着表面方向离散布置的窗口区域，该多个窗口区域使用光学干涉的作用选择性地发送具有基本上属于可见光谱的波段的光，该多个窗口区域沿离散方向布置在表面方向上， 并且一个或多个边界区域使用光学干涉的作用选择性地发射具有基本上属于不可见光谱的不可见光谱的波段的光，所述一个或多个边界区域位于相邻窗口区域之间。

公开(公告)号：US20080029796A1

公开(公告)日：2008-02-07

申请号：US11826570

申请日：2007-07-17

申请人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

发明人： Mitsuyoshi Mori ,  Takumi Yamaguchi ,  Toru Okino

IPC分类号： H01L31/113

CPC分类号： H01L27/14643 ,  H01L27/1463 ,  H01L27/14683

摘要： A solid state imaging device includes: an imaging region formed in an upper part of a substrate made of silicon to have a photoelectric conversion portion, a charge accumulation region of the photoelectric conversion portion being of a first conductivity type; a device isolation region formed in at least a part of the substrate to surround the photoelectric conversion portion; and a MOS transistor formed on a part of the imaging region electrically isolated from the photoelectric conversion region by the device isolation region. The width of the device isolation region is smaller in its lower part than in its upper part, and the solid state imaging device further includes a dark current suppression region surrounding the device isolation region and being of a second conductivity type opposite to the first conductivity type.

摘要翻译： 固态成像装置包括：成像区域，形成在由硅制成的基板的上部，具有光电转换部分，光电转换部分的电荷累积区域是第一导电类型; 形成在所述基板的至少一部分中以围绕所述光电转换部的器件隔离区; 以及形成在通过器件隔离区域与光电转换区域电隔离的成像区域的一部分上的MOS晶体管。 器件隔离区域的宽度在其下部比其上部小，并且固态成像器件还包括围绕器件隔离区域并且是与第一导电类型相反的第二导电类型的暗电流抑制区域 。

公开(公告)号：US20070128758A1

公开(公告)日：2007-06-07

申请号：US11605292

申请日：2006-11-29

申请人： Keisuke Tanaka ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

发明人： Keisuke Tanaka ,  Mitsuyoshi Mori ,  Takumi Yamaguchi

IPC分类号： H01L21/00 ,  H01L29/82

CPC分类号： B06B1/0292 ,  H01L27/0629 ,  H01L28/40 ,  H01L29/78

摘要： A semiconductor device has, on a single substrate, a semiconductor circuit portion and a hollow capacitor portion including a pair of counter electrodes and a hollow part located between the counter electrodes. The hollow part of the hollow capacitor portion is surrounded by an insulating film, and a through hole is formed in the insulating film to communicate with the hollow part. The top surface of the insulating film covering the hollow part is planarized. Part of the insulating film located to the lateral sides of the hollow part supports the other part thereof located on the hollow part and upper one of the counter electrodes.

摘要翻译： 半导体器件在单个衬底上具有包括一对对电极和位于对置电极之间的中空部分的半导体电路部分和中空电容器部分。 中空电容器部分的中空部分被绝缘膜包围，并且在绝缘膜中形成通孔以与中空部分连通。 覆盖中空部分的绝缘膜的顶表面被平坦化。 位于中空部分的侧面的绝缘膜的一部分支撑位于中空部分上的另一部分和对置电极的上部之一。

公开(公告)号：US07205593B2

公开(公告)日：2007-04-17

申请号：US10243981

申请日：2002-09-13

申请人： Takumi Yamaguchi

发明人： Takumi Yamaguchi

IPC分类号： H01L31/103

CPC分类号： H01L27/14609 ,  H01L27/14643

摘要： A MOS image pick-up device including a semiconductor substrate, an imaging region formed on the semiconductor substrate by arraying plural unit pixels, and a peripheral circuit region including a driving circuit for operating the imaging region formed on the semiconductor substrate; the unit pixels include a photodiode, MOS (metal-oxide-semiconductor) transistors and a first device-isolation portion, the peripheral circuit region includes a second device-isolation portion for isolating devices in the driving circuit; wherein each of the first device-isolation portion and the second device-isolation portion is at least one portion selected from an electrically insulating film formed on the substrate in order not to erode the substrate, a electrically insulating film formed on the substrate so as to erode the substrate to a depth ranging from 1 nm to 50 nm, and an impurity diffusion region formed within the substrate. The MOS image pick-up device is incorporated in a camera. Thereby, devices are isolated between MOS transistors, and noise caused by leakage current is decreased.

摘要翻译： 一种MOS图像拾取装置，包括半导体衬底，通过排列多个单位像素而形成在半导体衬底上的成像区域和包括用于操作形成在半导体衬底上的成像区域的驱动电路的外围电路区域; 单位像素包括光电二极管，MOS（金属氧化物半导体）晶体管和第一器件隔离部分，外围电路区域包括用于隔离驱动电路中的器件的第二器件隔离部分; 其中，所述第一器件隔离部分和所述第二器件隔离部分中的每一个是选自形成在所述衬底上的电绝缘膜中的至少一个部分，以便不侵蚀所述衬底;形成在所述衬底上的电绝缘膜，以便 将衬底侵蚀到1nm至50nm的深度，以及形成在衬底内的杂质扩散区。 MOS图像拾取装置并入相机中。 因此，器件在MOS晶体管之间被隔离，并且由漏电流引起的噪声降低。

公开(公告)号：US20060007336A1

公开(公告)日：2006-01-12

申请号：US10526564

申请日：2002-09-12

申请人： Takumi Yamaguchi

发明人： Takumi Yamaguchi

IPC分类号： H04N3/14

CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H04N5/3597 ,  H04N5/3742

摘要： The present invention aims to provide a solid-state imaging apparatus that realizes less leakage current, high image quality and low noise during the driving operation, and manufacturing method for the same. A MOS type imaging apparatus 1 includes an imaging region 10 and a driving region 20 both formed on a p-type silicon substrate (hereinafter called an “Si substrate”) 31. The imaging region 10 includes six pixels 11 to 16 disposed in a shape of a matrix having 2 rows and 3 columns. The driving region 20 includes a timing generation circuit 21, a vertical shift resistor 22, a horizontal shift resistor 23, a pixel selection circuit 24, and so on. All transistors included in the pixels 11 to 16 in the imaging region and the circuits 21 to 24 in the driving circuit region 20 are of n-channel MOS type.

摘要翻译： 本发明的目的在于提供一种在驱动操作期间实现较少漏电流，高图像质量和低噪声的固态成像装置及其制造方法。 MOS型成像装置1包括形成在p型硅衬底（以下称为“Si衬底”）31上的成像区域10和驱动区域20.成像区域10包括六个像素11至16，其形状为 具有2行和3列的矩阵。 驱动区域20包括定时生成电路21，垂直移位电阻22，水平移动电阻23，像素选择电路24等。 包括在成像区域中的像素11至16中的所有晶体管和驱动电路区域20中的电路21至24均为n沟道MOS型。

公开(公告)号：US06686963B1

公开(公告)日：2004-02-03

申请号：US09545631

申请日：2000-04-07

申请人： Takumi Yamaguchi

发明人： Takumi Yamaguchi

IPC分类号： H04N5335

CPC分类号： H04N5/372 ,  H01L27/14806

摘要： Signal charges are read out from light-receiving portions during a vertical blanking period by applying a read-out voltage pulse to read-out electrodes that are provided separately from vertical transfer electrodes, while signal charges are prevented from leaking from the light-receiving portions during a vertical scanning period by applying a negative voltage to the read-out electrodes. The read-out voltage pulse also is applied to vertical transfer electrodes, whereby signal charges are read out from the light-receiving portions more efficiently. Signal charges are read out from light-receiving portions in a predetermined region by applying a read-out voltage pulse to read-out electrodes while applying a negative voltage to a part of the vertical transfer electrodes.

摘要翻译： 在垂直消隐期间，通过将读出的电压脉冲施加到与垂直传送电极分开设置的读出电极，同时防止信号电荷从光接收部分泄漏，从光接收部分读出信号电荷 在垂直扫描期间，通过向读出的电极施加负电压。 读出的电压脉冲也被施加到垂直传输电极，从而更有效地从光接收部分读出信号电荷。 通过向读出的电极施加读出电压，同时向垂直传送电极的一部分施加负电压，从预定区域的光接收部分读出信号电荷。

公开(公告)号：US06617659B2

公开(公告)日：2003-09-09

申请号：US10368207

申请日：2003-02-18

申请人： Hiroyoshi Komobuchi ,  Yoshikazu Chatani ,  Takahiro Yamada ,  Rieko Nishio ,  Hiroaki Uozumi ,  Masayuki Masuyama ,  Takumi Yamaguchi

发明人： Hiroyoshi Komobuchi ,  Yoshikazu Chatani ,  Takahiro Yamada ,  Rieko Nishio ,  Hiroaki Uozumi ,  Masayuki Masuyama ,  Takumi Yamaguchi

IPC分类号： H01L2714

CPC分类号： G01J5/10 ,  H01L23/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a semiconductor device including a silicon substrate; a heat insulating layer including a silicon oxide film; and a heat detecting portion, in which the heat insulating layer includes a closed cavity and/or a hole, an interior of the hole has a greater diameter than an opening of the hole, and at least a portion of the closed cavity or the hole is formed within the silicon oxide film. The invention also provides a method of manufacturing this semiconductor device.

摘要翻译： 本发明提供一种包括硅衬底的半导体器件; 包括氧化硅膜的绝热层; 以及热检测部，其中所述绝热层包括封闭空腔和/或孔，所述孔的内部具有比所述孔的开口大的直径，并且所述封闭空腔或所述孔的至少一部分 形成在氧化硅膜内。 本发明还提供一种制造该半导体器件的方法。

公开(公告)号：US06310756B1

公开(公告)日：2001-10-30

申请号：US09517311

申请日：2000-03-02

申请人： Teruhisa Miura ,  Makoto Fujiwara ,  Masafumi Okamoto ,  Haruhiko Handa ,  Takumi Yamaguchi ,  Toshiyuki Hata

发明人： Teruhisa Miura ,  Makoto Fujiwara ,  Masafumi Okamoto ,  Haruhiko Handa ,  Takumi Yamaguchi ,  Toshiyuki Hata

IPC分类号： H01G400

CPC分类号： H01G9/008 ,  H01G9/00 ,  H01G9/08

摘要： A capacitor of the present invention includes a hollow capacitor element prepared by winding a pair of flat electrodes with a separator sandwiched in-between in such a way that both ends of each respective electrode protrude in a direction opposite to each other, an electrode connecting member connected to each respective end surface of the electrode of the above, by metal plasma-spraying, welding, soldering and adhesion using a conductive adhesive, and a terminal for external connection is connected to the electrode connecting member. A cylindrical metal case contains the capacitor element together with a driving electrolyte and a sealing plate closing the opening of the metal case. A reduction in resistance of electrodes is made possible and, in addition, the capacitor can be made smaller in size and the number of the components can be decreased.

摘要翻译： 本发明的电容器包括中空电容器元件，该中空电容器元件通过以分隔件夹在其间的方式卷绕一对扁平电极而制成，使得各个电极的两端沿彼此相反的方向突出，电极连接构件 通过使用导电粘合剂的金属等离子体喷涂，焊接，焊接和粘接连接到上述电极的每个相应的端表面，并且用于外部连接的端子连接到电极连接构件。 圆柱形金属外壳包含电容器元件以及驱动电解质和封闭金属外壳开口的密封板。 电极的电阻降低成为可能，此外，可以使电容器的尺寸更小，并且可以减少部件的数量。

公开(公告)号：US06246568B1

公开(公告)日：2001-06-12

申请号：US09147558

申请日：1999-01-20

申请人： Keiichi Nakao ,  Kyoushige Shimizu ,  Takumi Yamaguchi

发明人： Keiichi Nakao ,  Kyoushige Shimizu ,  Takumi Yamaguchi

IPC分类号： H01G900

CPC分类号： H01G9/155 ,  H01G11/58 ,  Y02E60/13 ,  Y02T10/7022 ,  Y10T29/417

摘要： The invention relates to an electric double layer capacitor for large capacity used in regeneration or electric power storage for various electric appliances and electric vehicles, and its manufacturing method. As the resin to be used in the current collector, by adding low softening point resin, polytetrafluoroethylene resin, latex resin or the like, the flexibility, thick coating performance and winding performance are improved. By preparing the electrode solution for making such current collector by using a high pressure dispersion machine, the capacity and density of the current collector can be enhanced substantially. According to this manufacturing method, the electric double layer capacitor may be further increased in size, increased in capacity and lowered in cost.

摘要翻译： 本发明涉及用于各种电器和电动车辆的再生或蓄电的大容量双电层电容器及其制造方法。 作为集电体使用的树脂，通过添加低软化点树脂，聚四氟乙烯树脂，胶乳树脂等，提高了柔软性，厚涂层性能和卷绕性能。 通过使用高压分散机制备这种集电体的电极溶液，可以大大提高集电体的容量和密度。 根据该制造方法，双层电容器的尺寸进一步增大，容量增加，成本降低。

公开(公告)号：US5338036A

公开(公告)日：1994-08-16

申请号：US52448

申请日：1993-06-09

申请人： Hiromasa Takeuchi ,  Toshihiko Iwatani ,  Takumi Yamaguchi

发明人： Hiromasa Takeuchi ,  Toshihiko Iwatani ,  Takumi Yamaguchi

IPC分类号： A63B69/36

CPC分类号： A63B69/3608

摘要： A simple golf exercising aid device for notifying a golf player immediately after any head-up. The device comprises sound pickup means for an impacting sound caused by the impact of a club head against a golf ball, first means which compares, with a threshold value, a waveform within a predetermined frequency band out of the signals provided by the sound pickup means and outputs the result after a predetermined delay time, a motion sensor made up of an earth magnetic field sensor or an angular velocity sensor, for converting the motion of a golf player's head into an electrical signal, and second means which rectifies and then differentiates the output signal of said motion sensor, and which compares the differentiated output with a threshold value. Said motion sensor is mounted a portion of the golf player's head, and judgment output is provided when the timings of the outputs from the two means agree.

摘要翻译： 一种简单的高尔夫运动辅助装置，用于在任何平视后立即通知高尔夫球手。 该装置包括用于由球杆头对着高尔夫球的冲击而引起的冲击声的拾音装置，第一装置将由声拾波装置提供的信号中的预定频带内的波形与阈值进行比较 并输出预定延迟时间后的结果，由地球磁场传感器或角速度传感器构成的运动传感器，用于将高尔夫球员头部的运动转换为电信号;以及第二装置， 所述运动传感器的输出信号，并且将差分输出与阈值进行比较。 所述运动传感器安装在高尔夫球员的头部的一部分上，当来自两个装置的输出的定时一致时，提供判断输出。