公开(公告)号：US20040096179A1

公开(公告)日：2004-05-20

申请号：US10370785

申请日：2003-02-20

Inventor： Louis J. Bintz ,  Raluca Dinu

IPC: G02B006/00

CPC classification number: G02F1/3558 ,  G02B6/132 ,  G02B6/138 ,  G02B2006/121 ,  G02F1/065 ,  G02F1/365 ,  G02F2201/07 ,  G02F2202/07 ,  G02F2202/38

Abstract: An electro-optic waveguide device, comprising (a) a first polymer buffer clad having a refractive index of about 1.445 to about 1.505 and a thickness of about 2.2 nullm to about 3.2 nullm; (b) a first polymer clad having a refractive index of about 1.53 to about 1.61 and a thickness of about 1.0 nullm to about 3.0 nullm; (c) an electro-optic polymer core having a refractive index of about 1.54 to about 1.62 and a thickness of about 1.0 nullm to about 3.0 nullm; and (d) a second polymer buffer clad having a refractive index of about 1.445 to about 1.505 and a thickness of about 2.2 nullm to about 3.2 nullm.

Abstract translation: 一种电光波导装置，包括（a）第一聚合物缓冲包层，其折射率为约1.445至约1.505，厚度为约2.2μm至约3.2μm; （b）折射率为约1.53至约1.61且厚度为约1.0μm至约3.0μm的第一聚合物包层; （c）具有约1.54至约1.62的折射率和约1.0μm至约3.0μm的厚度的电光聚合物芯; 和（d）折射率为约1.445至约1.505且厚度为约2.2μm至约3.2μm的第二聚合物缓冲包层。

公开(公告)号：US20040096138A1

公开(公告)日：2004-05-20

申请号：US10699696

申请日：2003-11-04

Applicant: FUJITSU LIMITED

Inventor： Akio Maeda ,  Takashi Shiotani

IPC: G02F001/035 ,  G02B006/10

CPC classification number: G02F1/035 ,  G02B2006/12097 ,  G02B2006/1218 ,  G02F1/05 ,  G02F2201/07 ,  G02F2201/50

Abstract: A manufacturing method for an optical waveguide device. The manufacturing method includes the steps of forming an optical waveguide in a substrate having an electro-optic effect, forming an SiO2 film on the substrate, forming Si films on the SiO2 film, the lower surface of the substrate, and at least a part of the side surface of the substrate to thereby make a conduction between the Si film formed on the SiO2 film and the Si film formed on the lower surface of the substrate. The manufacturing method further includes the steps of applying a photoresist to the Si film formed on the SiO2 film, patterning the photoresist so that a portion of the photoresist corresponding to the optical waveguide is left, forming a groove on the substrate along the optical waveguide by reactive ion etching, and removing the photoresist and the Si films.

Abstract translation: 一种光波导装置的制造方法。 该制造方法包括以下步骤：在具有电光效应的基板中形成光波导，在基板上形成SiO 2膜，在SiO 2膜上形成Si膜，在基板的下表面，以及至少部分 从而使形成在SiO 2膜上的Si膜与形成在基板的下表面上的Si膜之间导通。 该制造方法还包括以下步骤：将形成在SiO 2膜上的Si膜施加光致抗蚀剂，图案化光致抗蚀剂，使得与光波导对应的部分光致抗蚀剂留下，沿着光波导在基板上形成凹槽 反应离子蚀刻，以及去除光致抗蚀剂和Si膜。

公开(公告)号：US20040067021A1

公开(公告)日：2004-04-08

申请号：US10451435

申请日：2003-11-12

Inventor： Yasuyuki Miyama ,  Hirotoshi Nagata ,  Toshihiro Sakamoto

IPC: G02F001/035

CPC classification number: G02F1/0322 ,  G02F1/035 ,  G02F1/0356 ,  G02F2201/07 ,  G02F2201/16 ,  G02F2203/21 ,  G02F2203/50

Abstract: A first film (8) is formed between a substrate (1) and a signal electrode (3); ground electrodes (5) and (6) which constitute an optical waveguide device (10), and a second film (9) is formed between the substrate (1) and a signal electrode (4); ground electrodes (6) and (7). An optical phase modulator (10A) is composed of the substrate (1), an optical waveguide (2), the signal electrode (3), the ground electrodes (5) and (6), and the first film (8). An optical intensity modulator (10B) is composed of the substrate (1), the optical waveguide (2), the signal electrode (4), the ground electrodes (6) and (7), and the second film (9). The optical waveguide device (10) is composed of the optical phase modulator (10A) and the optical intensity modulator (10B), which are integrated monolithically.

Abstract translation: 第一膜（8）形成在基板（1）和信号电极（3）之间; 构成光波导装置（10）的接地电极（5）和（6），在基板（1）和信号电极（4）之间形成第二膜（9）。 接地电极（6）和（7）。 光学相位调制器（10A）由基板（1），光波导（2），信号电极（3），接地电极（5）和（6）和第一膜（8）组成。 光强度调制器（10B）由基板（1），光波导（2），信号电极（4），接地电极（6）和（7）和第二膜（9）构成。 光波导装置（10）由光学相位调制器（10A）和光强度调制器（10B）构成，其一体地集成。

公开(公告)号：US20040033001A1

公开(公告)日：2004-02-19

申请号：US10380585

申请日：2003-03-13

Inventor： Hirotoshi Nagata ,  Yasuyuki Miyama ,  Futoshi Yamamoto ,  Takashi Shinriki ,  Ryo Shimizu

IPC: G02F001/035

CPC classification number: G02F1/2255 ,  G02F1/0356 ,  G02F2201/07 ,  G02F2202/42 ,  G02F2203/21

Abstract: There is provided a high performance optical waveguide type optical modulator with excellent long term reliability, in which contamination of the buffer layer in a forming process of a signal field adjustment region on the buffer layer by a lift-off method or an etching method, is prevented and DC drift thus suppressed. The optical waveguide type optical modulator 10 comprises a substrate 11 having an electro-optic effect, optical waveguides 12 formed on the surface of this substrate 11, a traveling-wave type signal electrode 13a and ground electrodes 13b which are provided on the substrate 11 and control a lightwave, and a buffer layer 14 provided between the electrodes 13 and the optical waveguides 12, and furthermore, a dielectric layer 15 is provided on the entire surface of the buffer layer 14 on the side of the electrodes 13, and a signal field adjustment region 16 which has a wider width than that of the traveling-wave type signal electrode 13a and is made of a material with a higher refractive index than that of the dielectric layer 15 is formed between the dielectric layer 15 and the traveling-wave type signal electrode 13a.

Abstract translation: 提供了一种具有优异的长期可靠性的高性能光波导型光学调制器，其中通过剥离方法或蚀刻方法在缓冲层上的信号场调整区域的形成处理中的缓冲层的污染是 防止并且DC漂移被抑制。 光波导型光调制器10包括具有电光效应的基板11，形成在该基板11的表面上的光波导12，设置在基板11上的行波型信号电极13a和接地电极13b，以及 控制光波，以及设置在电极13和光波导12之间的缓冲层14，此外，在缓冲层14的电极13一侧的整个表面上设置有电介质层15，并且信号场 在介电层15和行波型之间形成具有比行波型信号电极13a宽的宽度并且由具有比电介质层15的折射率高的材料制成的调整区域16 信号电极13a。

公开(公告)号：US06631231B2

公开(公告)日：2003-10-07

申请号：US09810516

申请日：2001-03-16

Applicant: Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Tatsuo Kawaguchi ,  Takashi Yoshino ,  Minoru Imaeda ,  Kenji Aoki ,  Osamu Mitomi

Inventor： Kiminori Mizuuchi ,  Kazuhisa Yamamoto ,  Tatsuo Kawaguchi ,  Takashi Yoshino ,  Minoru Imaeda ,  Kenji Aoki ,  Osamu Mitomi

IPC: G02B600

CPC classification number: G02F1/3775 ,  G02F1/3525 ,  G02F2201/07

Abstract: An optical waveguide element includes a three-dimensional optical waveguide of a bulky non-linear optical crystal, a substrate, and a joining layer made of an amorphous material. The substrate is joined to the optical waveguide via the joining layer.

Abstract translation: 光波导元件包括笨重的非线性光学晶体的三维光波导，基板和由非晶材料制成的接合层。 基板经由接合层与光波导接合。

公开(公告)号：US20030156311A1

公开(公告)日：2003-08-21

申请号：US10197559

申请日：2002-07-18

Applicant: Mitsubishi Denki Kabushiki Kaisha

Inventor： Hitoshi Tada

IPC: G02F001/03 ,  G02F001/07 ,  G02F001/00

CPC classification number: B82Y20/00 ,  G02F1/01708 ,  G02F1/025 ,  G02F2201/066 ,  G02F2201/07

Abstract: A band discontinuity reduction layer having a band gap energy larger than that of that of an MQW (multiple quantum well) absorption layer and smaller than that of a p-InP clad layer is provided between the MQW absorption layer and the p-InP clad layer. In addition, a band discontinuity reduction layer having a band gap energy larger than that of the MQW absorption layer and smaller than that of an n-InP clad layer is provided between the MQW absorption layer and the n-InP clad layer. Consequently, as a pile-up of carriers is suppressed, a semiconductor light modulator with an enhanced response speed can be obtained.

Abstract translation: 在MQW吸收层和p-InP覆盖层之间提供具有比MQW（多量子阱）吸收层的带隙能量大的带隙能量并且小于p-InP覆盖层的带隙能量的带间断层， 。 此外，在MQW吸收层和n-InP覆盖层之间设置有具有比MQW吸收层的带隙能量大的带隙能量并且小于n-InP覆盖层的带隙能量减少层。 因此，随着载流子的堆积被抑制，可以获得具有增强的响应速度的半导体光调制器。

公开(公告)号：US06583480B1

公开(公告)日：2003-06-24

申请号：US10019010

申请日：2001-12-21

Applicant: Hirotoshi Nagata ,  Yasuyuki Miyama

Inventor： Hirotoshi Nagata ,  Yasuyuki Miyama

IPC: H01L310232

CPC classification number: G02F1/035 ,  G02F2201/07 ,  G02F2201/50

Abstract: An electro-optic element comprising a ferroelectric substrate comprising a single crystal having an electro-optic effect, in which an optical waveguide is formed by thermal diffusion of titanium in a main face, and in which an axis in which said electro-optic effect is induced is parallel to said main face; a heat treated buffer layer provided on said ferroelectric substrate on a side in which said optical waveguides are formed; electrodes provided on a part of the buffer layer; and a protective film for preventing contamination of the buffer layer provided on at least the region of the buffer layer on which the electrodes are not formed.

Abstract translation: 一种电光元件，包括具有电光效应的单晶的铁电基板，其中通过钛在主面上的热扩散形成光波导，其中所述电光效应为 诱导的平行于所述主面; 在形成所述光波导的一侧设置在所述强电介质基板上的热处理缓冲层; 设置在缓冲层的一部分上的电极; 以及用于防止缓冲层被污染的保护膜，该缓冲层至少设置在不形成电极的缓冲层的区域上。

公开(公告)号：US20020136478A1

公开(公告)日：2002-09-26

申请号：US09959156

申请日：2002-05-06

Inventor： Miyama Yasuyuki ,  Hirotoshi Nagata ,  Toshihiro Sakamoto ,  Tetsuya Fujino

IPC: G02F001/035 ,  G02B006/27 ,  G02B006/12

CPC classification number: G02F1/035 ,  G02F1/225 ,  G02F2001/212 ,  G02F2201/07 ,  G02F2203/07

Abstract: An optical waveguide is formed on a substrate made of a material with an electro-optic effect. Then, an intermediate layer is fabricated, on the main surface of the substrate, by a dielectric material selected from the group consisting of AOx, B2Oy, COz (A: divalent element, B: trivalent element, C: quadrivalent element, 0

Abstract translation: 在由具有电光效应的材料制成的基板上形成光波导。 然后，通过选自AOx，B2Oy，COz（A：二价元素，B：三价元素，C：四价元素，0

公开(公告)号：US20020071065A1

公开(公告)日：2002-06-13

申请号：US10067845

申请日：2002-02-08

Inventor： Yun-Bok Lee

IPC: G02F001/1343

CPC classification number: G02F1/134363 ,  G02F1/133711 ,  G02F1/1368 ,  G02F2201/07

Abstract: In a method of forming an array substrate for in-plane switching liquid crystal display device a first metal layer is formed on a substrate and then patterned using a first mask so as to form a gate line having a gate electrode and a common line having a plurality of common electrodes. A gate insulation layer is formed on the substrate to cover the patterned first metal layer. A semiconductor layer is formed on the gate insulation layer using a second mask, wherein the semiconductor layer includes an active layer of pure amorphous silicon and an ohmic contact layer of impurity-doped amorphous silicon. A second metal layer is formed on the gate insulation layer to cover the semiconductor layer and then patterned using a third mask to form a data line having a source electrode, a pixel connecting line having a plurality of pixel electrodes, and a drain electrode that is spaced apart from the source electrode. A channel is formed by etching a portion of the ohmic contact layer between the source and drain electrodes. An alignment layer is formed over the substrate to cover the patterned second metal layer. The substrate having the alignment layer and the source and drain electrode is then thermal-treated in a furnace to cure the alignment layer and to anneal a thin film transistor.

Abstract translation: 在形成面内切换液晶显示装置的阵列基板的方法中，在基板上形成第一金属层，然后使用第一掩模进行图案化，以形成具有栅电极和公共线的栅线 多个公共电极。 在基板上形成栅极绝缘层以覆盖图案化的第一金属层。 使用第二掩模在栅绝缘层上形成半导体层，其中半导体层包括纯非晶硅的有源层和杂质掺杂非晶硅的欧姆接触层。 在栅绝缘层上形成第二金属层以覆盖半导体层，然后使用第三掩模进行图案化，以形成具有源电极，具有多个像素电极的像素连接线和具有多个像素电极的漏电极的数据线， 与源电极间隔开。 通过蚀刻源极和漏极之间的欧姆接触层的一部分形成通道。 在衬底上形成取向层以覆盖图案化的第二金属层。 然后将具有取向层和源极和漏极的衬底在炉中热处理以固化取向层并退火薄膜晶体管。

公开(公告)号：US20020006243A1

公开(公告)日：2002-01-17

申请号：US09775024

申请日：2001-01-31

Inventor： Roberto Longone

IPC: G02F001/035 ,  G02B006/10

CPC classification number: G02F1/0356 ,  G02F1/035 ,  G02F1/225 ,  G02F1/3136 ,  G02F2001/212 ,  G02F2201/07 ,  G02F2201/121

Abstract: An optical component, such as, for example, a Mach-Zehnder modulator, in which the ground electrodes are formed directly on a surface of a substrate, that is, without the intermediary of or presence of conventional buffer dielectric layers. Forming the optical component without a dielectric layer between the ground electrodes and the substrate allows for a reduction in the drive voltage in the operation of the modulator.