-
公开(公告)号：US20240313501A1
公开(公告)日：2024-09-19
申请号：US18672653
申请日：2024-05-23
Applicant: ROHM CO., LTD.
Inventor： Koki SAKAMOTO
CPC classification number: H01S5/023 , H01S5/02469 , H01S5/042
Abstract: This semiconductor light emitting device comprises: a substrate that has a substrate front surface, a substrate back surface, and substrate lateral surfaces; front-surface-side wiring; back-surface-side wiring; and a semiconductor light emitting element that has a light emitting element lateral surface as a light emitting surface. The substrate lateral surfaces include a first substrate lateral surface which faces the same side as the light emitting element lateral surface that is a light emitting surface, and a second substrate lateral surface on the reverse side from the first substrate lateral surface. The semiconductor light emitting element is disposed so as to be offset more toward the first substrate lateral surface than the second substrate lateral surface. Provided to the first substrate lateral surface is an end surface through hole which passes through the substrate in the thickness direction of the substrate and which connects the front-surface-side wiring and the back-surface-side wiring.
-
公开(公告)号：US20240310854A1
公开(公告)日：2024-09-19
申请号：US18677154
申请日：2024-05-29
Applicant: ROHM CO., LTD.
Inventor： Hiroshi YAGUMA , Masahiro YASUDA
IPC: G05D1/622 , G05D109/10 , G05D109/20 , G05D111/30
CPC classification number: G05D1/622 , G05D2109/10 , G05D2109/20 , G05D2111/30
Abstract: An autonomous moving apparatus is an apparatus that autonomously moves toward a target object set in advance, and includes a plurality of radio wave receiving units that receive a radio wave transmitted from the autonomous moving apparatus or an external device, a radio wave prevention unit that blocks or absorbs a radio wave from a predetermined direction when viewed from the radio wave receiving units, a movement direction setting unit that sets a movement direction of the autonomous moving apparatus based on a measurement result by the plurality of radio wave receiving units, and an operation control unit that controls the autonomous moving apparatus to travel in the movement direction set by the movement direction setting unit.
-
公开(公告)号：US20240302307A1
公开(公告)日：2024-09-12
申请号：US18597075
申请日：2024-03-06
Applicant: ROHM Co., LTD.
Inventor： Shunsuke Akasaka
Abstract: Provided is a sensor module that measures concentration of at least one type of gas contained in a gas mixture. The sensor module includes a microheater of thermal conduction type that generates heat according to supplied power, and a control apparatus that is able to communicate with the microheater, in which the control apparatus detects a first detection value corresponding to first temperature of the microheater at a time of supply of first power, detects a second detection value corresponding to second temperature of the microheater at a time of supply of second power higher than the first power, and calculates the concentration of the at least one type of gas contained in the gas mixture based on the first detection value, the second detection value, and thermal conductivity data related to thermal conductivity of each of a plurality of types of gases contained in the gas mixture.
-
公开(公告)号：US12086002B2
公开(公告)日：2024-09-10
申请号：US17695293
申请日：2022-03-15
Applicant: ROHM CO., LTD.
Inventor： Takumi Yamada
Abstract: A power supply system of the present disclosure includes a single first semiconductor integrated circuit (IC), at least one second semiconductor IC, a first transmission line and a second transmission line. Each of the single first semiconductor IC and the at least one second semiconductor IC includes at least one output terminal configured to output an output voltage. The single first semiconductor IC is configured to supply a clock signal to the at least one second semiconductor IC via the first transmission line. Based on the clock signal, one of the single first semiconductor IC and the at least one second semiconductor IC is configured to transmit a data signal via the second transmission line to another one.
-
公开(公告)号：US12080793B2
公开(公告)日：2024-09-03
申请号：US17670947
申请日：2022-02-14
Applicant: ROHM CO., LTD.
Inventor： Akihiro Hikasa
IPC: H01L29/78 , H01L29/10 , H01L29/12 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/66 , H01L29/739
CPC classification number: H01L29/7813 , H01L29/1095 , H01L29/12 , H01L29/417 , H01L29/423 , H01L29/49 , H01L29/66734 , H01L29/739
Abstract: A semiconductor device includes a semiconductor layer having a main surface in which a trench is formed, a first-conductivity-type body region formed along a sidewall of the trench in a surface layer portion of the main surface of the semiconductor layer, a second-conductivity-type impurity region formed along the sidewall of the trench in a surface layer portion of the body region, a gate insulating layer formed on an inner wall of the trench, a gate electrode that is embedded in the trench and that faces the body region and the impurity region with the gate insulating layer placed between the gate electrode and the body region and between the gate electrode and the impurity region, a contact electrode that passes through the sidewall of the trench from inside the trench and is drawn out to the surface layer portion of the main surface of the semiconductor layer and is electrically connected to the body region and to the impurity region, and an embedded insulating layer that is interposed between the gate electrode and the contact electrode in the trench and that insulates the gate electrode and the contact electrode.
-
Patent Agency Ranking
公开(公告)号：US12080760B2
公开(公告)日：2024-09-03
申请号：US17263784
申请日：2019-08-05
Applicant: ROHM CO., LTD.
Inventor： Yuki Nakano , Masatoshi Aketa , Takui Sakaguchi , Yuichiro Nanen
CPC classification number: H01L29/0696 , H01L29/045 , H01L29/086 , H01L29/1608 , H01L29/7805 , H01L29/7806 , H01L29/7813
Abstract: An SiC semiconductor device includes an SiC semiconductor layer having a first main surface and a second main surface, a gate electrode embedded in a trench with a gate insulating layer, a source region of a first conductivity type formed in a side of the trench in a surface laver portion of the first main surface, a body region of a second conductivity type formed in a region at the second main surface side with respect to the source region in the surface layer portion of the first main surface, a drift region of the first conductivity type formed in a region at the second main surface side in the SiC semiconductor layer, and a contact region of the second conductivity type having an impurity concentration of not more than 1.0×1020 cm−3 and formed in the surface layer portion of the first main surface.
-
公开(公告)号：US12080675B2
公开(公告)日：2024-09-03
申请号：US17430691
申请日：2020-02-10
Applicant: ROHM CO., LTD.
Inventor： Kazunori Fuji
IPC: H01L23/00 , H01L23/12 , H01L23/31 , H01L23/495
CPC classification number: H01L24/40 , H01L23/12 , H01L23/3107 , H01L23/49562 , H01L24/32 , H01L24/37 , H01L24/84 , H01L2224/32225 , H01L2224/37147 , H01L2224/40245 , H01L2224/84893
Abstract: Semiconductor device A1 of the disclosure includes: semiconductor element 11 having element obverse surface 11a and element reverse surface 11b spaced apart from each other in z direction (first direction) with first region 111 formed on the element obverse surface 11a; metal plate 31 (electrode member) disposed on the element obverse surface 11a and electrically connected to the first region 111; electrically conductive substrate 22A (first conductive member) disposed to face the element reverse surface 11b and bonded to the semiconductor element 11; electrically conductive substrate 22B (second conductive member) spaced apart from the conductive substrate 22A (first conductive member); and lead member 5 (connecting member) electrically connecting the metal plate 31 (electrode member) and the conductive substrate 22B (second conductive member). The lead member 5 (connecting member) is bonded to the metal plate 31 (electrode member) by laser welding. The semiconductor device of this configuration provides improved reliability.
-
公开(公告)号：US12077005B2
公开(公告)日：2024-09-03
申请号：US17915274
申请日：2021-03-26
Applicant: ROHM CO., LTD.
Inventor： Satoshi Kimoto
CPC classification number: B41J2/3352 , B41J2/3351 , B41J2/33515 , B41J2/33525 , B41J2/3353 , B41J2/33535 , B41J2/3354 , B41J2/33545 , B41J2/3355 , B41J2/3357 , B41J2/3359 , B41J2/34 , B41J2/345
Abstract: A thermal print head includes a substrate, a resistor layer and a wiring layer. The substrate is made of a single crystal semiconductor and includes an obverse surface facing in one sense of a thickness direction. The resistive layer is supported by the substrate and includes a plurality of heat generating parts arranged side by side in a main scanning direction. The wiring layer is supported by the substrate and forms a conductive path to the plurality of heat generating parts. The wiring layer includes a conductive part and a heat generating sub-part for each of the plurality of heat generating parts, where the conductive part has a lower resistance value per unit length in a sub-scanning direction than the heat generating part, and where the heat generating sub-part has a resistance value per unit length in the sub-scanning direction that falls between the respective resistance values of the heat generating part and the conductive part. The substrate includes a ridge raised from the obverse surface and extending in the main scanning direction. The heat generating part, the heat generating sub-part and the conductive part are disposed on the ridge. The heat generating sub-part is located between the heat generating part and the conductive part in the sub-scanning direction.
-
公开(公告)号：US20240290778A1
公开(公告)日：2024-08-29
申请号：US18656653
申请日：2024-05-07
Applicant: ROHM CO., LTD.
Inventor： Tadao YUKI , Satoshi TANAKA
CPC classification number: H01L27/0296 , H01L27/0255 , H01L27/0629 , H01L29/7817
Abstract: A semiconductor device includes, as each of a first electrostatic protection diode, a second electrostatic protection diode, and a third electrostatic protection diode, a lateral NDMOS transistor thyristorized by having a p-type dopant region formed in its drain. For example, the anode of the first electrostatic protection diode is connected to a first signal terminal; the anode of the second electrostatic protection diode is connected to a second signal terminal; and the anode of the third electrostatic protection diode is connected to a ground terminal. The cathodes of the first, second, and third electrostatic protection diodes are connected together.
-
公开(公告)号：US12075617B2
公开(公告)日：2024-08-27
申请号：US16931164
申请日：2020-07-16
Applicant: ROHM CO., LTD.
Inventor： Toshiyuki Kanaya
Abstract: A non-volatile semiconductor memory device, includes: a semiconductor substrate; a first insulating layer disposed on the semiconductor substrate; a first conductive layer disposed on the first insulating layer and constituting a first floating gate of one of memory cells adjacent to each other; a second conductive layer disposed on the first insulating layer and constituting a second floating gate of the other one of the memory cells adjacent to each other; a third insulating layer covering the first conductive layer and the second conductive layer; and a fourth insulating layer disposed on the third insulating layer, wherein electric charges are held in each of the first conductive layer and the second conductive layer electrically insulated by separating the fourth insulating layer in distance from the first conductive layer and the second conductive layer.
-
-
-
-
-
-
-
-
-
Search Results
6461
records
(took 0.048 seconds)
