公开(公告)号：US07948700B2

公开(公告)日：2011-05-24

申请号：US12127390

申请日：2008-05-27

Applicant: Hoo-san Lee ,  Sung-chul Lee ,  Hoon-sang Oh

Inventor： Hoo-san Lee ,  Sung-chul Lee ,  Hoon-sang Oh

IPC: G11B5/09

CPC classification number: G11B5/82 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/855

Abstract: Provided is a bit patterned medium including bridges which induce exchange coupling between adjacent bits in order to reduce a switching field difference resulting from different magnetization directions of bits. The bridges and the bits are integrally formed with each other. The bits are locally connected by the bridges. A magnetostatic force for each bit is reduced due to an exchange coupling between adjacent bits, thereby reducing a switching field distribution of the bits.

Abstract translation: 提供了包括桥的位图案化介质，其引起相邻位之间的交换耦合，以便减少由位的不同磁化方向引起的开关场差。 桥和钻头彼此一体形成。 这些位由桥接器本地连接。 由于相邻位之间的交换耦合，每个位的静磁力减小，从而减小位的开关场分布。

公开(公告)号：US20110045318A1

公开(公告)日：2011-02-24

申请号：US12662215

申请日：2010-04-06

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pi ,  Jin-seong Heo ,  Ji-young Bae

IPC: G11B5/66

CPC classification number: G11B5/72 ,  G11B5/7325 ,  G11C11/14

Abstract: A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (β).

Abstract translation: 一种磁存储器件包括其中分别在磁性层的上表面和下表面上形成不同非磁性层的轨道。 两个非磁性层中的一个包括具有大于或等于12的原子序数的元素。因此，磁性层具有相对高的非绝热性（＆Bgr）。

公开(公告)号：US20100284209A1

公开(公告)日：2010-11-11

申请号：US12775133

申请日：2010-05-06

Applicant: Ho Jung Kim ,  Sang Beom Kang ,  Chul Woo Park ,  Hyun Ho Choi ,  Jong Wan Kim ,  Young Pill Kim ,  Sung Chul Lee

Inventor： Ho Jung Kim ,  Sang Beom Kang ,  Chul Woo Park ,  Hyun Ho Choi ,  Jong Wan Kim ,  Young Pill Kim ,  Sung Chul Lee

IPC: G11C19/00 ,  G11C7/00

CPC classification number: G11C19/0841 ,  G11C8/14 ,  G11C11/14

Abstract: Provided are nonvolatile memory devices and program methods thereof. an integrated circuit memory system includes a memory array comprising at least one magnetic track, each of the at least one magnetic track including a plurality of magnetic domains and at least one read/write unit coupled thereto, decoding circuitry coupled to the memory array that is operable to select at least one of the magnetic domains, a read/write controller coupled to the memory array that is operable to read data from at least one of the plurality of magnetic domains and to write data to at least one of the plurality of magnetic domains via the at least one read/write unit coupled to each of the at least one magnetic track, and a domain controller coupled to memory array that is operable to move data between the magnetic domains on each of the at least one magnetic track.

Abstract translation: 提供了非易失性存储器件及其编程方法。 集成电路存储器系统包括存储器阵列，其包括至少一个磁道，所述至少一个磁道中的每一个磁道包括多个磁畴和耦合到其上的至少一个读/写单元，耦合到存储器阵列的解码电路， 可操作以选择磁畴中的至少一个;耦合到存储器阵列的读/写控制器，其可操作以从多个磁畴中的至少一个读取数据，并将数据写入多个磁区中的至少一个 通过耦合到所述至少一个磁道中的每一个的所述至少一个读/写单元的域，以及耦合到存储器阵列的域控制器，所述存储器阵列可操作以在所述至少一个磁道中的每一个上的所述磁畴之间移动数据。

公开(公告)号：US07817461B2

公开(公告)日：2010-10-19

申请号：US11752397

申请日：2007-05-23

Applicant: Sung-chul Lee ,  Sung-hoon Choa ,  Yong-su Kim

Inventor： Sung-chul Lee ,  Sung-hoon Choa ,  Yong-su Kim

IPC: G11C11/00

CPC classification number: G11C11/14 ,  G11B5/66 ,  G11C19/0808

Abstract: Provided are a data storage device using a magnetic domain wall movement and a method of operating the data storage device. The data storage device includes a magnetic layer including a plurality of magnetic domains, first and second ferromagnetic pinned layers formed on lower and upper surfaces of the magnetic layer, respectively, and having opposite magnetization directions, first and second insulating spacers interposed between the first and second ferromagnetic pinned layers and the magnetic layer, respectively, and an energy supplying unit applying energy to the magnetic layer for a magnetic domain wall movement.

Abstract translation: 提供了使用磁畴壁移动的数据存储装置和操作数据存储装置的方法。 数据存储装置包括：包含多个磁畴的磁性层，分别形成在磁性层的下表面和上表面上并且具有相反的磁化方向的第一和第二铁磁固定层，第一和第二绝缘垫片插入在第一和 第二铁磁钉扎层和磁性层，以及向磁性层施加能量以供磁畴壁运动的能量供给单元。

公开(公告)号：US07658892B2

公开(公告)日：2010-02-09

申请号：US11440664

申请日：2006-05-24

Applicant: Chan Ho Lee ,  Ju Yong Kim ,  Sang Jun Kong ,  Dong Yun Lee ,  Sung Chul Lee ,  Dong Myung Suh ,  Myeong Ju Ha ,  Dong Uk Lee

Inventor： Chan Ho Lee ,  Ju Yong Kim ,  Sang Jun Kong ,  Dong Yun Lee ,  Sung Chul Lee ,  Dong Myung Suh ,  Myeong Ju Ha ,  Dong Uk Lee

IPC: B01J19/00 ,  B01J8/04

CPC classification number: B01J15/005 ,  B01J19/244 ,  B01J19/249 ,  B01J2219/0004 ,  B01J2219/00157 ,  B01J2219/00159 ,  B01J2219/182 ,  B01J2219/1945 ,  B01J2219/2454 ,  B01J2219/2459 ,  B01J2219/2467 ,  B01J2219/2485

Abstract: A reformer is disclosed for supplying a reformed gas containing hydrogen to a fuel cell. The reformer comprises a heat source; a preheating portion preheated by heat from the heat source; a pipe shaped reforming reaction unit; a carbon monoxide processing unit extending from the reforming reaction unit; and a rugged portion installed on an internal surface of the pipe shaped reforming reaction unit which is heated by the heat source. By using the rugged portion and the extended pipe design, the area heated by the heat source is increased and more heat is recovered, thereby improving thermal efficiency.

Abstract translation: 公开了一种用于向燃料电池提供含氢气的重整气体的重整器。 重整器包括热源; 由热源预热的预热部分; 管状重整反应单元; 从重整反应单元延伸的一氧化碳处理单元; 以及安装在由所述热源加热的所述管状重整反应单元的内表面上的凹凸部。 通过使用坚固的部分和延长的管道设计，由热源加热的区域增加并且回收更多的热量，从而提高热效率。

公开(公告)号：US20090316297A1

公开(公告)日：2009-12-24

申请号：US12485150

申请日：2009-06-16

Applicant: Hoo-san LEE ,  Sok-hyun Kong ,  Sung-chul Lee

Inventor： Hoo-san LEE ,  Sok-hyun Kong ,  Sung-chul Lee

IPC: G11B5/596

CPC classification number: G11B5/865 ,  G11B5/59638

Abstract: A servo master having a pattern capable of being magnetically transferred as a servo pattern to a magnetic recording medium, wherein the servo master is formed of a material having a magnetic anisotropic constant perpendicular to a surface of the magnetic recording medium. The magnetic transfer method can include preparing a servo master patterned with a servo pattern to be formed on a magnetic recording medium, and arranging the servo master on the magnetic recording medium and applying an external magnetic field to the servo master in a first direction perpendicular to a recording surface of the magnetic recording medium, and in a second direction parallel to the recording surface of the magnetic recording medium.

Abstract translation: 一种具有能够作为伺服图案磁转印到磁记录介质的图案的伺服主机，其中伺服主机由具有垂直于磁记录介质表面的磁各向异性常数的材料形成。 磁转移方法可以包括制备图案化的伺服母模，以形成在磁记录介质上的伺服模式，并将伺服主机布置在磁记录介质上，并在与伺服主机垂直的第一方向上向伺服主机施加外部磁场 磁记录介质的记录表面，并且在平行于磁记录介质的记录表面的第二方向上。

公开(公告)号：US20090310241A1

公开(公告)日：2009-12-17

申请号：US12289299

申请日：2008-10-24

Applicant: Sung-Chul Lee

Inventor： Sung-Chul Lee

IPC: G11B5/02

CPC classification number: G11C19/0841 ,  G11C11/14 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: A method of operating an information storage device using a magnetic domain wall movement in a magnetic nanowire is provided. The magnetic nanowire includes a plurality of magnetic domains and pinning sites formed in regions between the magnetic domains. The method includes depinning the magnetic domain wall from a first pinning site by applying a first pulse current having a first pulse current density to the magnetic nanowire and moving the magnetic domain wall to a second pinning site by applying a second pulse current having a second pulse current density to the magnetic nanowire. The first pulse current density is greater than the second pulse current density.

Abstract translation: 提供了一种在磁性纳米线中使用磁畴壁移动来操作信息存储装置的方法。 磁性纳米线包括形成在磁畴之间的区域中的多个磁畴和钉扎位置。 该方法包括通过向磁性纳米线施加具有第一脉冲电流密度的第一脉冲电流并将磁畴壁移动到第二钉扎位置，通过施加具有第二脉冲的第二脉冲电流来从第一钉扎位置去除磁畴壁 磁性纳米线的电流密度。 第一脉冲电流密度大于第二脉冲电流密度。

公开(公告)号：US20090169932A1

公开(公告)日：2009-07-02

申请号：US12266451

申请日：2008-11-06

Applicant: Sung-Chul Lee ,  Ju-Yong Kim ,  Woo-Cheol Shin ,  Yong-Kul Lee ,  Sang-Jun Kong ,  In-Hyuk Son ,  Jin-Goo Ahn ,  Tae-Keun Kim

Inventor： Sung-Chul Lee ,  Ju-Yong Kim ,  Woo-Cheol Shin ,  Yong-Kul Lee ,  Sang-Jun Kong ,  In-Hyuk Son ,  Jin-Goo Ahn ,  Tae-Keun Kim

IPC: H01M8/18

CPC classification number: C01B3/323 ,  B01J4/002 ,  B01J8/062 ,  B01J8/065 ,  B01J8/067 ,  B01J2208/00309 ,  B01J2208/00504 ,  B01J2219/00265 ,  C01B3/384 ,  C01B2203/0227 ,  C01B2203/066 ,  C01B2203/0811 ,  C01B2203/1223 ,  C01B2203/1229 ,  C01B2203/1241 ,  C01B2203/1247 ,  H01M8/0618

Abstract: A fuel cell system and a reformer for a fuel cell system prevents backfire and improves efficiency of heat transfer. The fuel cell system includes a reformer generating hydrogen gas from fuel including hydrogen by a catalytic chemical reaction using heat energy, and at least one electricity generating unit generating electrical energy by an electrochemical reaction between the hydrogen gas and oxygen. The reformer includes a case, a heat source, and a reforming reaction part. The case forms an external shape. The heat source is disposed in the case to generate heat energy by an oxidation reaction between fuel and a catalyst, and includes a mesh, an oxidation catalyst layer formed on a surface of the mesh, and at least one fuel injection nozzle supplying the fuel to the oxidation catalyst layer. The reforming reaction part is disposed in the case to generate hydrogen gas from fuel using the heat energy generated from the heat source.

Abstract translation: 燃料电池系统和用于燃料电池系统的重整器防止回火并提高传热效率。 燃料电池系统包括重整器，其通过使用热能的催化化学反应从包含氢的燃料中产生氢气，以及至少一个通过氢气和氧气之间的电化学反应产生电能的发电单元。 重整器包括壳体，热源和重整反应部件。 外壳形状为外形。 热源通过燃料和催化剂之间的氧化反应设置在壳体中以产生热能，并且包括网，形成在网的表面上的氧化催化剂层，以及至少一个燃料喷嘴，其将燃料供给到 氧化催化剂层。 重整反应部被配置在壳体中，利用从热源产生的热能从燃料产生氢气。

公开(公告)号：US20090097365A1

公开(公告)日：2009-04-16

申请号：US12073105

申请日：2008-02-29

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-Jin Cho ,  Kwang-seok Kim

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-Jin Cho ,  Kwang-seok Kim

IPC: G11B11/00 ,  G11B5/84 ,  H01F41/14

CPC classification number: G11B5/64 ,  G11B5/66 ,  G11B5/82 ,  G11C11/14 ,  G11C19/0841 ,  H01F41/32 ,  Y10S977/933 ,  Y10T29/49002

Abstract: Provided are a magnetic layer, a method of forming the magnetic layer, an information storage device, and a method of manufacturing the information storage device. The information storage device may include a magnetic track having a plurality of magnetic domains, a current supply element connected to the magnetic layer and a reading/writing element. The magnetic track includes a hard magnetic track, and the hard magnetic track has a magnetization easy-axis extending in a direction parallel to a width of the hard magnetic track.

Abstract translation: 提供了磁性层，形成磁性层的方法，信息存储装置以及信息存储装置的制造方法。 信息存储装置可以包括具有多个磁畴的磁道，连接到磁性层的电流源元件和读/写元件。 磁轨包括硬磁道，并且硬磁轨具有沿与硬磁道的宽度平行的方向延伸的易磁化磁化。

公开(公告)号：US20090073859A1

公开(公告)日：2009-03-19

申请号：US12155896

申请日：2008-06-11

Applicant: Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

Inventor： Young-jin Cho ,  Sung-chul Lee ,  Kwang-seok Kim ,  Ji-young Bae ,  Sun-ae Seo ,  Chang-won Lee

IPC: G11B3/00

CPC classification number: G11C19/0841 ,  G11C11/14

Abstract: Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

Abstract translation: 提供信息存储装置及其制造方法。 信息存储装置的磁道包括其中至少一个磁畴形成区域和至少一个磁畴壁形成区域沿长度方向交替布置的磁性层。 所述至少一个磁畴形成区域相对于所述至少一个磁畴壁形成区域具有不同的磁各向异性能量。 中间层形成在磁性层下面。 中间层包括至少一个第一材料区域和至少一个第二材料区域。 所述至少一个第一材料区域和所述至少一个第二材料区域中的每一个对应于所述至少一个磁畴形成区域和所述至少一个磁畴壁形成区域中的一个。