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    Liquid Crystal Displays with Oxide-Based Thin-Film Transistors
    111.
    发明申请
    Liquid Crystal Displays with Oxide-Based Thin-Film Transistors 有权
    具有氧化物薄膜晶体管的液晶显示器

    公开(公告)号：US20150055047A1

    公开(公告)日：2015-02-26

    申请号：US14228070

    申请日：2014-03-27

    Applicant: Apple Inc.

    Inventor： Shih Chang Chang ,  Ming-Chin Hung ,  Cheng-Ho Yu ,  Ting-Kuo Chang ,  Abbas Jamshidi Roudbari ,  Shang-Chih Lin ,  Kyung-Wook Kim ,  Chun-Yao Huang ,  Szu-Hsien Lee ,  Yu-Cheng Chen ,  Hiroshi Osawa

    IPC: G02F1/1368

    CPC classification number: H01L27/3262 ,  G02F1/13454 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  G02F2202/104 ,  G09G3/3225 ,  G09G3/3611 ,  G09G3/3677 ,  G09G2320/043 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255

    Abstract: An electronic device may include a display having an array of display pixels on a substrate. The display pixels may be organic light-emitting diode display pixels or display pixels in a liquid crystal display. In an organic light-emitting diode display, hybrid thin-film transistor structures may be formed that include semiconducting oxide thin-film transistors, silicon thin-film transistors, and capacitor structures. The capacitor structures may overlap the semiconducting oxide thin-film transistors. Organic light-emitting diode display pixels may have combinations of oxide and silicon transistors. In a liquid crystal display, display driver circuitry may include silicon thin-film transistor circuitry and display pixels may be based on oxide thin-film transistors. A single layer or two different layers of gate metal may be used in forming silicon transistor gates and oxide transistor gates. A silicon transistor may have a gate that overlaps a floating gate structure.

    Abstract translation: 电子设备可以包括在基板上具有显示像素阵列的显示器。 显示像素可以是液晶显示器中的有机发光二极管显示像素或显示像素。 在有机发光二极管显示器中，可以形成包括半导体氧化物薄膜晶体管，硅薄膜晶体管和电容器结构的混合薄膜晶体管结构。 电容器结构可以与半导体氧化物薄膜晶体管重叠。 有机发光二极管显示像素可以具有氧化物和硅晶体管的组合。 在液晶显示器中，显示驱动器电路可以包括硅薄膜晶体管电路，显示像素可以基于氧化物薄膜晶体管。 可以在形成硅晶体管栅极和氧化物晶体管栅极中使用单层或两层不同的栅极金属层。 硅晶体管可以具有与浮动栅极结构重叠的栅极。

    Displays with Integrated Touch and Improved Image Pixel Aperture
    112.
    发明申请
    Displays with Integrated Touch and Improved Image Pixel Aperture 有权
    显示器具有集成触摸和改进的图像像素孔径

    公开(公告)号：US20140327632A1

    公开(公告)日：2014-11-06

    申请号：US14226710

    申请日：2014-03-26

    Applicant: Apple Inc.

    Inventor： Abbas Jamshidi Roudbari ,  Cheng-Ho Yu ,  Marduke Yousefpor ,  Shih Chang Chang ,  Ting-Kuo Chang ,  Yu-Cheng Chen

    IPC: G06F3/041

    CPC classification number: G06F3/0412 ,  G02F1/13338 ,  G02F2201/40 ,  G06F3/041 ,  G06F3/044 ,  G06F2203/04103

    Abstract: A display may be provided with integral touch functionality. The display may include a common electrode layer having row electrodes arranged in rows and column electrodes interposed between the row electrodes of each row. The row electrodes may be electrically coupled by conductive paths. The row and column electrodes may be coupled to touch sensor circuitry that uses the row and column electrodes to detect touch events. Each electrode of the common electrode layer may cover a respective portion of an array of pixels. Each pixel of the display may have a respective aperture. The conductive paths that electrically couple row electrodes of the common electrode layer may cover or otherwise block some light from passing through pixels, resulting in reduced apertures. Dummy structures may be provided for other pixels that modify the apertures of the other pixels to match the reduced apertures associated with the conductive paths.

    Abstract translation: 可以提供具有整体触摸功能的显示器。 显示器可以包括具有排列成行和列电极的行电极的公共电极层，其插入在每行的行电极之间。 行电极可以通过导电路径电耦合。 行和列电极可以耦合到使用行电极和列电极的触摸传感器电路来检测触摸事件。 公共电极层的每个电极可以覆盖像素阵列的相应部分。 显示器的每个像素可以具有相应的孔径。 电耦合公共电极层的行电极的导电路径可以覆盖或以其它方式阻挡通过像素的一些光，导致减小的孔径。 可以为修改其他像素的孔径以匹配与导电路径相关联的缩小的孔的其他像素提供虚拟结构。

    Electronic Device with Compact Gate Driver Circuitry
    113.
    发明申请
    Electronic Device with Compact Gate Driver Circuitry 有权
    具有紧凑型栅极驱动器电路的电子器件

    公开(公告)号：US20140146026A1

    公开(公告)日：2014-05-29

    申请号：US13687713

    申请日：2012-11-28

    Applicant: APPLE INC.

    Inventor： Cheng-Ho Yu ,  Abbas Jamshidi Roudbari ,  Shih-Chang Chang ,  Ting-Kuo Chang

    IPC: G09G5/20

    CPC classification number: G09G3/3677

    Abstract: An electronic device display may have an array of display pixels that are controlled using a grid of data lines and gate lines. The display may include compact gate driver circuits that perform gate driver operations to drive corresponding gate lines. Each compact gate driver circuit may include a first driver stage and a second driver stage. The first driver stage may receive a start pulse signal and produce a control signal. The control signal may be stored by a capacitor to identify a control state of the gate driver circuit. The second driver stage may receive the control signal, a clock signal, and a corresponding inverted clock signal and drive the corresponding gate line based on the received signals. The second driver stage may include pass transistor circuitry that passes the clock signal to the corresponding gate line and may include short circuit protection circuitry.

    Abstract translation: 电子设备显示器可以具有使用数据线和栅极线的网格来控制的显示像素阵列。 显示器可以包括执行栅极驱动器操作以驱动相应的栅极线的紧凑型栅极驱动器电路。 每个紧凑型栅极驱动器电路可以包括第一驱动器级和第二驱动级。 第一驱动级可以接收起始脉冲信号并产生控制信号。 控制信号可以由电容器存储以识别栅极驱动器电路的控制状态。 第二驱动级可以接收控制信号，时钟信号和对应的反相时钟信号，并根据接收到的信号驱动相应的栅极线。 第二驱动器级可以包括传递晶体管电路，其将时钟信号传递到对应的栅极线并且可以包括短路保护电路。

    DIFFERENT LIGHTLY DOPED DRAIN LENGTH CONTROL FOR SELF-ALIGN LIGHT DRAIN DOPING PROCESS
    114.
    发明申请
    DIFFERENT LIGHTLY DOPED DRAIN LENGTH CONTROL FOR SELF-ALIGN LIGHT DRAIN DOPING PROCESS 有权
    用于自对准排水过程的不同的轻型排水长度控制

    公开(公告)号：US20140103349A1

    公开(公告)日：2014-04-17

    申请号：US13801261

    申请日：2013-03-13

    Applicant: APPLE INC.

    Inventor： Cheng-Ho Yu ,  Young Bae Park ,  Shih Chang Chang ,  Ting-Kuo Chang ,  Shang-Chih Lin

    IPC: H01L29/786 ,  H01L29/66

    CPC classification number: H01L29/78651 ,  H01L27/1288 ,  H01L29/6675 ,  H01L29/78621 ,  H01L29/78645

    Abstract: A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist layer over a portion of a TFT stack. The TFT stack includes a conductive gate layer, and a semiconductor layer. The method also includes doping the exposed semiconductor layer with a first doping dose. The method further includes etching a portion of the conductive gate layer to expose a portion of the semiconductor layer, and doping the exposed portion of the semiconductor layer with a second doping dose. The method also includes removing the first photoresist layer, and depositing a second photoresist layer over a first portion of the doped semiconductor layer in an active area of the pixels to expose a second portion of the doped semiconductor layer in an area surrounding the active area. The method further includes doping the second portion of the doped semiconductor layer with a third doping dose, the first dose being higher than the second dose and the third dose.

    Abstract translation: 提供了一种制造用于具有像素阵列的LCD的薄膜晶体管（TFT）的方法。 该方法包括在TFT堆叠的一部分上沉积第一光致抗蚀剂层。 TFT堆叠包括导电栅极层和半导体层。 该方法还包括以第一掺杂剂量掺杂暴露的半导体层。 该方法还包括蚀刻导电栅极层的一部分以暴露半导体层的一部分，并以第二掺杂剂量掺杂半导体层的暴露部分。 该方法还包括去除第一光致抗蚀剂层，以及在像素的有源区域中在掺杂半导体层的第一部分上沉积第二光致抗蚀剂层，以在围绕有源区域的区域中暴露掺杂半导体层的第二部分。 该方法还包括以第三掺杂剂量掺杂掺杂半导体层的第二部分，第一剂量高于第二剂量和第三剂量。

    Thin Film Transistor with Increased Doping Regions
    115.
    发明申请
    Thin Film Transistor with Increased Doping Regions 失效
    具有增加掺杂区域的薄膜晶体管

    公开(公告)号：US20130328053A1

    公开(公告)日：2013-12-12

    申请号：US13629531

    申请日：2012-09-27

    Applicant: APPLE INC.

    Inventor： Abbas Jamshidi Roudbari ,  Cheng-Ho Yu ,  Shih Chang Chang ,  Ting-Kuo Chang

    IPC: H01L29/786 ,  H01L33/08

    CPC classification number: H01L29/78675 ,  H01L27/1222 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78696

    Abstract: A transistor that may be used in electronic displays to selectively activate one or more pixels. The transistor includes a metal layer, a silicon layer deposited on at least a portion of the metal layer, the silicon layer includes an extension portion that extends a distance past the metal layer, and at least three lightly doped regions positioned in the silicon layer. The at least three lightly doped regions have a lower concentration of doping atoms than other portions of the silicon layer forming the transistor.

    Abstract translation: 可用于电子显示器中以选择性地激活一个或多个像素的晶体管。 晶体管包括金属层，沉积在金属层的至少一部分上的硅层，硅层包括延伸距离金属层的延伸部分和位于硅层中的至少三个轻掺杂区域。 所述至少三个轻掺杂区域具有比形成晶体管的硅层的其它部分更低的掺杂原子浓度。

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