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    Method For Dual Damascene Process
    111.
    发明申请
    Method For Dual Damascene Process 有权
    双镶嵌工艺的方法

    公开(公告)号：US20080227287A1

    公开(公告)日：2008-09-18

    申请号：US11687093

    申请日：2007-03-16

    Applicant: Ching-Yu Chang ,  Jen-Chieh Shih

    Inventor： Ching-Yu Chang ,  Jen-Chieh Shih

    IPC: H01L21/4763 ,  H01L21/311

    CPC classification number: H01L21/31144 ,  H01L21/76808

    Abstract: The present disclosure provides a method of dual damascene processing. The method includes providing a substrate having vias formed therein; forming an under-layer in the vias and on the substrate; applying a solvent washing process to the under-layer; forming a silicon contained layer on the under-layer; patterning the silicon contained layer (SCL) to form SCL openings exposing the under-layer within the SCL openings; and etching the substrate and the under-layer within the SCL openings to form trenches.

    Abstract translation: 本公开提供了一种双镶嵌加工的方法。 该方法包括提供其中形成有通孔的基板; 在通孔和基板上形成下层; 对底层进行溶剂洗涤处理; 在下层上形成含硅层; 图案化含硅层（SCL）以形成暴露SCL开口内的下层的SCL开口; 并在SCL开口内蚀刻衬底和底层以形成沟槽。

    Immersion Lithography System Using A Sealed Wafer Bath
    113.
    发明申请
    Immersion Lithography System Using A Sealed Wafer Bath 有权
    浸入式平版印刷系统使用密封晶片浴

    公开(公告)号：US20080106715A1

    公开(公告)日：2008-05-08

    申请号：US11671046

    申请日：2007-02-05

    Applicant: Burn Jeng Lin ,  Ching-Yu Chang

    Inventor： Burn Jeng Lin ,  Ching-Yu Chang

    IPC: G03B27/42

    CPC classification number: G03F7/70866 ,  G03F7/70341

    Abstract: Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus comprising a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly, the wafer stage comprising a seal ring disposed on a seal ring frame along a top edge of the wafer retained on the wafer stage, the seal ring for sealing a gap between an edge of the wafer and the wafer stage. The embodiment further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid and a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and

    Abstract translation: 描述了浸没光刻系统和使用密封晶片底部的方法。 一个实施例是一种浸没光刻设备，其包括透镜组件，该透镜组件包括成像透镜和用于将晶片保持在透镜组件下方的晶片台，晶片台包括沿着晶片的顶部边缘设置在密封环框架上的密封环， 晶片台，用于密封晶片边缘与晶片台之间的间隙的密封环。 该实施例还包括用于保持浸没流体的流体箱，相对于晶片台定位的流体箱，用于使保留在晶片台上的晶片完全浸没在浸没流体中，并且覆盖设置在流体的至少一部分上 罐，用于在流体箱内提供温度控制，流体丰富的环境; 和

    Method and Material For Forming A Double Exposure Lithography Pattern
    114.
    发明申请
    Method and Material For Forming A Double Exposure Lithography Pattern 有权
    用于形成双曝光平版印刷图案的方法和材料

    公开(公告)号：US20080032508A1

    公开(公告)日：2008-02-07

    申请号：US11563805

    申请日：2006-11-28

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/467

    CPC classification number: H01L21/76816 ,  G03F7/0035 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088

    Abstract: A method of lithography patterning includes forming a first material layer on a substrate; forming a first patterned resist layer including at least one opening therein on the first material layer; forming a second material layer on the first patterned resist layer and the first material layer; forming a second patterned resist layer including at least one opening therein on the second material layer; and etching the first and second material layers uncovered by the first and second patterned resist layers.

    Abstract translation: 光刻图案的方法包括在基底上形成第一材料层; 在所述第一材料层上形成包括至少一个开口的第一图案化抗蚀剂层; 在所述第一图案化抗蚀剂层和所述第一材料层上形成第二材料层; 在所述第二材料层上形成包括其中的至少一个开口的第二图案化抗蚀剂层; 以及蚀刻由第一和第二图案化抗蚀剂层未覆盖的第一和第二材料层。

    SHALLOW TRENCH ISOLATION STRUCTURE AND METHOD OF FABRICATING THE SAME
    115.
    发明申请
    SHALLOW TRENCH ISOLATION STRUCTURE AND METHOD OF FABRICATING THE SAME 审中-公开
    浅层隔离结构及其制造方法

    公开(公告)号：US20070178664A1

    公开(公告)日：2007-08-02

    申请号：US11697751

    申请日：2007-04-09

    Applicant: Uway Tseng ,  Ching-Yu Chang

    Inventor： Uway Tseng ,  Ching-Yu Chang

    IPC: H01L21/76

    CPC classification number: H01L21/76224

    Abstract: A shallow trench isolation structure has a trench formed in a substrate, a silicon oxynitride layer conformally formed on the sidewalls and bottom of the trench, and a high density plasma (HDP) oxide layer substantially filling the trench.

    Abstract translation: 浅沟槽隔离结构具有在衬底中形成的沟槽，保形地形成在沟槽的侧壁和底部上的氧氮化硅层和基本上填充沟槽的高密度等离子体（HDP）氧化物层。

    Water mark defect prevention for immersion lithography
    117.
    发明申请
    Water mark defect prevention for immersion lithography 有权
    浸渍光刻防水标识缺陷

    公开(公告)号：US20070077516A1

    公开(公告)日：2007-04-05

    申请号：US11271639

    申请日：2005-11-10

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: G03C1/00

    CPC classification number: G03F7/2041 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0392

    Abstract: A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.

    Abstract translation: 一种光致抗蚀剂材料，其具有响应于与酸的反应而使其溶解于碱溶液的聚合物。 该材料包括响应于辐射能分解形成酸的光酸产生剂（PAG）和能够中和酸并具有降低迁移率的猝灭剂。 因此，光致抗蚀剂材料可以防止浸没式光刻中的水痕缺陷。

    Method of forming high etch resistant resist patterns
    119.
    发明申请
    Method of forming high etch resistant resist patterns 有权
    形成高耐腐蚀抗蚀剂图案的方法

    公开(公告)号：US20070048675A1

    公开(公告)日：2007-03-01

    申请号：US11209684

    申请日：2005-08-24

    Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

    Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC: G03F7/26

    CPC classification number: G03F7/40 ,  G03F7/405

    Abstract: A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.

    Abstract translation: 提供了一种在半导体衬底上形成耐蚀刻光刻胶图案的方法。 在一个实施例中，在基板上形成光致抗蚀剂层。 光致抗蚀剂层被曝光和显影以形成光致抗蚀剂图案。 在光致抗蚀剂图案上形成含聚合物的层。 光致抗蚀剂图案和含聚合物的层被热处理，使得聚合物基本上扩散到光致抗蚀剂图案中，从而增强光致抗蚀剂图案的耐蚀刻性。 然后除去含聚合物的层。

    Overlay mark and method of fabricating the same
    120.
    发明授权
    Overlay mark and method of fabricating the same 有权
    叠加标记及其制造方法

    公开(公告)号：US07094662B2

    公开(公告)日：2006-08-22

    申请号：US10710637

    申请日：2004-07-27

    Applicant: Ching-Yu Chang

    Inventor： Ching-Yu Chang

    IPC: H01L21/76

    CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    Abstract: A method of forming an overlay mark is provided. A first material layer is formed on a substrate, and then a first trench serving as a trench type outer mark is formed in the first material layer. The first trench is partially filled with the first deposition layer. A second material is formed over the first trench and the first deposition layer. A second trench is formed exposing the first deposition layer within the first trench. The second trench is partially filled with a second deposition layer forming a third trench. A third material layer is formed on the substrate to cover the second deposition layer and the second material layer. A step height is formed on the third deposition layer between the edge of the first trench and the center of the first trench. A raised feature serving as an inner mark is formed on the third deposition layer.

    Abstract translation: 提供了一种形成覆盖标记的方法。 在基板上形成第一材料层，然后在第一材料层中形成用作沟槽型外标的第一沟槽。 第一沟槽部分地填充有第一沉积层。 在第一沟槽和第一沉积层上形成第二材料。 形成第二沟槽，使第一沉积层暴露在第一沟槽内。 第二沟槽部分地填充有形成第三沟槽的第二沉积层。 在基板上形成第三材料层以覆盖第二沉积层和第二材料层。 在第一沉积层的边缘和第一沟槽的中心之间的第三沉积层上形成台阶高度。 在第三沉积层上形成用作内标的凸起特征。

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