公开(公告)号：US20210109283A1

公开(公告)日：2021-04-15

申请号：US16597323

申请日：2019-10-09

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Colleen Meagher ,  Karen Nummy ,  Yusheng Bian ,  Ajey Poovannummoottil Jacob

IPC: G02B6/122 ,  G02B6/136

Abstract: Structures including a waveguide core and methods of fabricating a structure that includes a waveguide core. A dielectric layer including a trench with a first sidewall and a second sidewall, and a waveguide core positioned inside the trench between the first and second sidewalls of the trench. The waveguide core has a first width, and the trench has a second width between the first and second sidewalls that is greater than the first width.

公开(公告)号：US10942321B1

公开(公告)日：2021-03-09

申请号：US16559979

申请日：2019-09-04

Applicant: GLOBALFOUNDRIES U.S. Inc. ,  KHALIFA UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： Sujith Chandran ,  Marcus Dahlem ,  Ajey Poovannummoottil Jacob ,  Yusheng Bian ,  Bruna Paredes ,  Jaime Viegas

IPC: G02B6/42 ,  G02B6/293

Abstract: Structures for a wavelength-division multiplexing filter and methods of fabricating a structure for a wavelength-division multiplexing filter. The structure includes a first waveguide core, a second waveguide core laterally spaced from the first waveguide core, and a ring resonator arranged in a vertical direction over the first waveguide core and the second waveguide core. The ring resonator is also arranged in a lateral direction between the first waveguide core and the second waveguide core. The first and second waveguide cores are composed of a semiconductor material, such as single-crystal silicon, and the ring resonator is composed of a dielectric material, such as silicon nitride.

公开(公告)号：US12278297B2

公开(公告)日：2025-04-15

申请号：US18050147

申请日：2022-10-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: H01L31/0232 ,  G02B6/12 ,  H01L31/105 ,  G02B6/42

Abstract: Disclosed are embodiments of a photonic structure with at least one tapered coupler positioned laterally adjacent and along the length of a sidewall of a layer, such as a light absorption layer (LAL), of a photodetector to facilitate mode matching. Some embodiments include a vertically oriented photodetector, which is on an insulator layer and has an LAL stacked between bottom and top semiconductor layers, and a coupler, which is on the insulator layer positioned laterally adjacent to the photodetector and has stacked cores with one of the cores being at the same level as the LAL. Other embodiments include a horizontally oriented photodetector, which is on an insulator layer and has an LAL on a recessed section of a bottom semiconductor layer between side sections, and coupler(s), which is/are above side section(s) of the bottom semiconductor layer and, thus, positioned laterally adjacent to one or both sides of the LAL.

公开(公告)号：US20250076574A1

公开(公告)日：2025-03-06

申请号：US18242364

申请日：2023-09-05

Applicant: GlobalFoundries U.S. Inc.

Inventor： Md Nabil Shehtab Dhrubo ,  Andreas D. Stricker ,  Alexander Derrickson ,  Subramanian Krishnamurthy ,  Yusheng Bian ,  Judson R. Holt

IPC: G02B6/122 ,  G02B6/13

Abstract: Photonics chip structures including a reflector and methods of forming such structures. The photonics chip structure comprises a first waveguide core, a second waveguide core adjacent to the first waveguide core, and a reflector including a plurality of metal contacts over a portion of the first waveguide core. The second waveguide core is configured to couple light to the first waveguide core, and the metal contacts are configured to reflect the light.

公开(公告)号：US20240402426A1

公开(公告)日：2024-12-05

申请号：US18203321

申请日：2023-05-30

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Ryan Sporer ,  Karen Nummy

IPC: G02B6/124 ,  G02B6/13

Abstract: Structures for a photonics chip that include a reflector and methods of forming such structures. The structure comprises a reflector including a dielectric layer on a semiconductor substrate, a plurality of trenches in the dielectric layer, and a reflector layer. Each trench includes a plurality of sidewalls, and the reflector layer includes a portion on the sidewalls of each trench. The structure further comprises a photonic component over the reflector.

公开(公告)号：US20240361529A1

公开(公告)日：2024-10-31

申请号：US18139128

申请日：2023-04-25

Applicant: GlobalFoundries U.S. Inc.

Inventor： Keith Donegan ,  Thomas Houghton ,  Yusheng Bian ,  Karen Nummy ,  Kevin Dezfulian ,  Takako Hirokawa

IPC: G02B6/30 ,  G02B6/42

CPC classification number: G02B6/305 ,  G02B6/42 ,  G02B6/4206

Abstract: Structures including a cavity adjacent to an edge coupler and methods of forming such structures. The structure comprises a semiconductor substrate including a cavity with a sidewall, a dielectric layer on the semiconductor substrate, and an edge coupler on the dielectric layer. The structure further comprises a fill region including a plurality of fill features adjacent to the edge coupler. The fill region includes a reference marker at least partially surrounded by the plurality of fill features, and the reference marker has a perimeter that surrounds a surface area of the dielectric layer, and the surface area overlaps with a portion of the sidewall of the cavity.

公开(公告)号：US20240347652A1

公开(公告)日：2024-10-17

申请号：US18134100

申请日：2023-04-13

Applicant: GlobalFoundries U.S. Inc.

Inventor： Zhuojie Wu ,  Yusheng Bian ,  Judson R. Holt

IPC: H01L31/0232 ,  H01L31/0224 ,  H01L31/18

CPC classification number: H01L31/02327 ,  H01L31/022408 ,  H01L31/1808

Abstract: Structures including a photodetector and methods of forming a structure including a photodetector. The structure comprises a semiconductor layer comprising a crystalline semiconductor material, a waveguide core including a first sidewall and a second sidewall, and a photodetector including a light-absorbing layer, an anode, and a cathode. The light-absorbing layer includes a first portion and a second portion that are disposed on the semiconductor layer. The first portion of the light-absorbing layer is adjacent to the first sidewall of the waveguide core, and the second portion of the light-absorbing layer is adjacent to the second sidewall of the waveguide core.

公开(公告)号：US12111495B2

公开(公告)日：2024-10-08

申请号：US17828139

申请日：2022-05-31

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/30

CPC classification number: G02B6/1228 ,  G02B6/12004 ,  G02B6/305 ,  G02B2006/12097 ,  G02B2006/12111 ,  G02B2006/12121 ,  G02B2006/12147

Abstract: Structures for an edge coupler and methods of fabricating a structure for an edge coupler. The structure comprises an edge coupler including a first waveguide core and a second waveguide core adjacent to the first waveguide core in a lateral direction. The first waveguide core includes a first section with a first thickness and a first plurality of segments projecting in a vertical direction from the first section. The second waveguide core includes a second section with a second thickness and a second plurality of segments projecting in the vertical direction from the second section.

公开(公告)号：US20240329299A1

公开(公告)日：2024-10-03

申请号：US18126745

申请日：2023-03-27

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian

IPC: G02B6/12 ,  G02B6/122 ,  G02B6/125

CPC classification number: G02B6/12004 ,  G02B6/1228 ,  G02B6/125 ,  G02B2006/12104 ,  G02B2006/12121

Abstract: Structures for an edge coupler and methods of forming such structures. The structure comprises a semiconductor substrate, a first waveguide core including a curved section and an end that terminates the curved section, and a second waveguide core including a section disposed adjacent to the curved section of the first waveguide core. The first waveguide core is positioned between the second waveguide core and the semiconductor substrate.

公开(公告)号：US20240210621A1

公开(公告)日：2024-06-27

申请号：US18597173

申请日：2024-03-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Brett T. Cucci ,  Yusheng Bian ,  Abdelsalam Aboketaf ,  Edward W. Kiewra

IPC: G02B6/122 ,  G02B6/12 ,  G02B6/125 ,  G02B6/132

CPC classification number: G02B6/1228 ,  G02B6/1223 ,  G02B6/125 ,  G02B6/132 ,  G02B2006/12061 ,  G02B2006/12147 ,  G02B6/1225

Abstract: Disclosed are embodiments of a photonic integrated circuit (PIC) structure with a waveguide core having tapered sidewall liner(s) (e.g., symmetric tapered sidewall liners on opposing sides of a waveguide core, asymmetric tapered sidewall liners on opposing sides of a waveguide core, or a tapered sidewall liner on one side of a waveguide core). In some embodiments, the tapered sidewall liner(s) and waveguide core have different refractive indices. In an exemplary embodiment, the waveguide core is a first material (e.g., silicon) and the tapered sidewall liner(s) is/are a second material (e.g., silicon nitride) with a smaller refractive index than the first material. In another exemplary embodiment, the waveguide core is a first compound and the tapered sidewall liner(s) is/are a second compound with the same elements (e.g., silicon and nitrogen) as the first compound but with a smaller refractive index. Also disclosed are method embodiments for forming such a PIC structure.