TERNARY CONTENT ADDRESSABLE MEMORIES HAVING A BIT CELL WITH MEMRISTORS AND SERIALLY CONNECTED MATCH-LINE TRANSISTORS

    公开(公告)号:US20180040374A1

    公开(公告)日:2018-02-08

    申请号:US15228559

    申请日:2016-08-04

    CPC classification number: G11C15/046

    Abstract: An example ternary content addressable memory. A bit cell of the memory may include a first memristor that has a first terminal that is connected to a first data line and a second terminal that is selectively connected to a second data line via a first switching transistor. The bit cell may also include a second memristor that has a first terminal that is connected to a third data line and a second terminal that is selectively connected to a fourth data line via a second switching transistor. The bit cell may also include a first match-line transistor and a second match-line transistor that are connected in series between a first rail and a match line, with a gate of the first match-line transistor being connected to the second terminal of the first memristor, and a gate of the second match-line transistor being connected to the second terminal of the second memristor.

    Content addressable memories
    113.
    发明授权

    公开(公告)号:US09721661B1

    公开(公告)日:2017-08-01

    申请号:US15216011

    申请日:2016-07-21

    CPC classification number: G11C15/046 G11C13/0002 G11C13/0007 G11C15/04

    Abstract: An example content addressable memory. A bit cell of the memory may include a memristor and a switching transistor that are connected in series between a first data line and a second data line. The bit cell may also include a match-line transistor connected between a match line and a rail. A gate of the match-line transistor may be connected to a common node of the memristor and the switching transistor. The switching transistor may be sized such that its channel resistance when on is between a resistance associated with a low-resistance state of the memristor and a resistance associated with a high-resistance state of the memristor.

    Iterative programming of analog content addressable memory

    公开(公告)号:US11783907B2

    公开(公告)日:2023-10-10

    申请号:US17514847

    申请日:2021-10-29

    CPC classification number: G11C27/005 G11C15/046

    Abstract: Embodiments of the disclosure provide a system, method, or computer readable medium for programming a target analog voltage range of an analog content addressable memory (aCAM) row. The method may comprise calculating a threshold current sufficient to switch a sense amplifier (SA) on and discharge a match line (ML) connected to a cell of the aCAM; and based on calculating the threshold current, programming a match threshold value by setting a memristor conductance in association with the target analog voltage range applied to a data line (DL) input. The target analog voltage range may comprise a target analog voltage range vector.

    ENHANCED k-SAT SOLVER USING ANALOG CONTENT ADDRESSABLE MEMORY

    公开(公告)号:US20230289090A1

    公开(公告)日:2023-09-14

    申请号:US17691642

    申请日:2022-03-10

    CPC classification number: G06F3/0655 G06N3/063 G06F3/0604 G06F3/0673

    Abstract: A system for facilitating an enhanced k-SAT solver is provided. The system can include a set of analog content addressable memory (aCAM) modules that can represent an expression in a conjunctive normal form (CNF), wherein a respective aCAM module corresponds to a clause of the expression. The system can also include a set of data lines that can provide input candidate values to the set of aCAM modules. A controller of the system can program the set of aCAM modules with respective analog values to represent the expression. The system can also include sensing logic block to determine a distance of a current solution from a target solution based on a combination of respective outputs from the set of aCAM modules. The controller can then iteratively modify an input value for a subset of data lines until the current solution converges based on a convergence condition.

    Analog content addressable memory with analog input and analog output

    公开(公告)号:US11735281B2

    公开(公告)日:2023-08-22

    申请号:US17245540

    申请日:2021-04-30

    CPC classification number: G11C27/005 G11C15/046

    Abstract: An analog content addressable memory (aCAM) that enables parallel searching of analog ranges of values and generates analog outputs that quantify matches between input data and stored data is disclosed. The input data can be compared with the stored data, and the input data can be determined to match the stored data based on a value associated with the input data being within a range associated with the stored data. The aCAM can generate an analog output that represents a number of matches and a number of mismatches between the input data and the stored data. Based on the analog output, whether the input data matches the stored data and a degree to which the input data matches the stored data can be determined.

    Hardware accelerator with analog-content addressable memory (a-CAM) for decision tree computation

    公开(公告)号:US11615827B2

    公开(公告)日:2023-03-28

    申请号:US17071924

    申请日:2020-10-15

    Abstract: Examples described herein relate to a decision tree computation system in which a hardware accelerator for a decision tree is implemented in the form of an analog Content Addressable Memory (a-CAM) array. The hardware accelerator accesses a decision tree. The decision tree comprises of multiple paths and each path of the multiple paths includes a set of nodes. Each node of the decision tree is associated with a feature variable of multiple feature variables of the decision tree. The hardware accelerator combines multiple nodes among the set of nodes with a same feature variable into a combined single node. Wildcard values are replaced for feature variables not being evaluated in each path. Each combined single node associated with each feature variable is mapped to a corresponding column in the a-CAM array and the multiple paths of the decision tree to rows of the a-CAM array.

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