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144 条记录 (耗时 0.025 秒)

    Semiconductor devices including transistors and methods of fabricating the same
    112.
    发明申请
    Semiconductor devices including transistors and methods of fabricating the same 有权
    包括晶体管的半导体器件及其制造方法

    公开(公告)号：US20070111605A1

    公开(公告)日：2007-05-17

    申请号：US11600741

    申请日：2006-11-17

    申请人： Xiaoxin Zhang ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans Cho ,  Huaxiang Yin

    发明人： Xiaoxin Zhang ,  Wenxu Xianyu ,  Takashi Noguchi ,  Hans Cho ,  Huaxiang Yin

    IPC分类号： H01R24/00

    CPC分类号： H01L21/823412 ,  H01L21/823456 ,  H01L21/823807 ,  H01L21/82385

    摘要： A semiconductor device includes a transistor. The transistor includes a substrate having an inclined surface, a first upper surface extending from a lower portion of the inclined surface, and a second upper surface extending from an upper end of the inclined surface. A gate stack structure is formed on the inclined surface and includes a gate electrode. A first impurity region formed on one of the first and second upper surfaces contacts the gate stack structure. A second impurity region formed on the second upper surface contacts the gate stack structure. A channel between the first and second impurity regions is formed along the inclined surface in a crystalline direction.

    摘要翻译： 半导体器件包括晶体管。 晶体管包括具有倾斜表面的基板，从倾斜表面的下部延伸的第一上表面和从倾斜表面的上端延伸的第二上表面。 栅极堆叠结构形成在倾斜表面上并且包括栅电极。 形成在第一和第二上表面中的一个上的第一杂质区域接触栅极堆叠结构。 形成在第二上表面上的第二杂质区域接触栅堆叠结构。 第一和第二杂质区之间的通道在结晶方向上沿着倾斜表面形成。

    Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same
    113.
    发明申请
    Semi-conductor-on-insulator structure, semiconductor devices using the same and method of manufacturing the same 有权

    公开(公告)号：US20060267017A1

    公开(公告)日：2006-11-30

    申请号：US11397866

    申请日：2006-04-05

    申请人： Takashi Noguchi ,  Hans Cho ,  Wenxu Xianyu ,  Huaxiang Yin ,  Xiaoxin Zhang

    发明人： Takashi Noguchi ,  Hans Cho ,  Wenxu Xianyu ,  Huaxiang Yin ,  Xiaoxin Zhang

    IPC分类号： H01L29/76

    CPC分类号： H01L29/78687 ,  H01L29/66742 ,  H01L29/78603

    摘要： Semiconductor-on-insulator (SOI) structures, semiconductor devices using the same and methods of manufacturing the same, and more particularly, to a structure with a single-crystalline (for example, germanium (x-Ge)) layer on an insulating layer, semiconductor devices using the same, and methods of manufacturing the same. The SOI structure may include a single-crystalline substrate formed of a first semiconductor material, a first insulating layer formed on the substrate and having at least one window exposing a portion of the substrate, a first epitaxial growth region formed on a surface of the substrate exposed by the window and formed of at least one of the first semiconductor material and a second semiconductor material, and a first single-crystalline layer formed on the first insulating layer and the first epitaxial growth region and formed of the second semiconductor material, and crystallized using a surface of the first epitaxial growth region as a seed layer for crystallization.

    Method of manufacturing single crystal Si film
    116.
    发明申请
    Method of manufacturing single crystal Si film 有权

    公开(公告)号：US20060121691A1

    公开(公告)日：2006-06-08

    申请号：US11071175

    申请日：2005-03-04

    申请人： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

    发明人： Takashi Noguchi ,  Wenxu Xianyu ,  Huaxiang Yin

    IPC分类号： H01L21/30

    CPC分类号： H01L21/76254

    摘要： Provided is a method of manufacturing a single crystal Si film. The method includes: preparing a Si substrate on which a first oxide layer is formed and an insulating substrate on which a second oxide layer is formed; forming a dividing layer at a predetermined depth from a surface of the Si substrate by implanting hydrogen ions from above the first oxide layer; bonding the insulating substrate to the Si substrate so that the first oxide layer contacts the second oxide layer; and forming a single crystal Si film having a predetermined thickness on the insulating substrate by cutting the dividing layer by irradiating a laser beam from above the insulating substrate. Therefore, a single crystal Si film having a predetermined thickness can be formed on an insulating substrate.

    Method of manufacturing semiconductor device
    119.
    发明授权
    Method of manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US09006057B2

    公开(公告)日：2015-04-14

    申请号：US13989164

    申请日：2012-07-31

    申请人： Changliang Qin ,  Peizhen Hong ,  Huaxiang Yin

    发明人： Changliang Qin ,  Peizhen Hong ,  Huaxiang Yin

    IPC分类号： H01L21/36 ,  H01L27/088 ,  H01L29/78 ,  H01L21/306 ,  H01L29/66 ,  H01L21/3065 ,  H01L21/265

    CPC分类号： H01L21/30604 ,  H01L21/26506 ,  H01L21/30608 ,  H01L21/3065 ,  H01L29/66477 ,  H01L29/66636 ,  H01L29/7848

    摘要： A method of manufacturing a semiconductor device is disclosed. In one embodiment, the method comprises: forming a gate stack on a substrate; etching the substrate on both sides of the gate stack to form C-shaped source/drain grooves; and wet-etching the C-shaped source/drain grooves to form Σ-shaped source/drain grooves. With this method, it is possible to effectively increase stress applied to a channel region, to accurately control a depth of the source/drain grooves, and to reduce roughness of side walls and bottom portions of the grooves and thus reduce defects by etching the C-shaped source/drain grooves and then further wet-etching them to form the Σ-shaped source/drain grooves.

    摘要翻译： 公开了制造半导体器件的方法。 在一个实施例中，该方法包括：在衬底上形成栅叠层; 在栅极堆叠的两侧蚀刻衬底以形成C形源极/漏极沟槽; 并对C形源极/漏极沟槽进行湿式蚀刻以形成S形的源极/漏极沟槽。 通过该方法，能够有效地增加施加于沟道区域的应力，精确地控制源极/漏极沟槽的深度，并且可以减小沟槽的侧壁和底部的粗糙度，从而通过蚀刻C来减少缺陷 形状的源极/漏极沟槽，然后进一步湿法蚀刻它们以形成源极/漏极沟槽。

    Method for manufacturing semiconductor device
    120.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US08912070B2

    公开(公告)日：2014-12-16

    申请号：US13812500

    申请日：2012-10-12

    申请人： Xiaolong Ma ,  Huaxiang Yin ,  Zuozhen Fu

    发明人： Xiaolong Ma ,  Huaxiang Yin ,  Zuozhen Fu

    IPC分类号： H01L27/108

    CPC分类号： H01L29/78 ,  H01L21/26506 ,  H01L29/0895 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/66356 ,  H01L29/66477 ,  H01L29/66659 ,  H01L29/7391 ,  H01L29/7835 ,  H01L29/7848

    摘要： The present invention discloses a method for manufacturing a semiconductor device, comprising: forming a gate stack structure on a substrate; forming a drain region in the substrate on one side of the gate stack structure; and forming a source region made of GeSn in the substrate on the other side of the gate stack structure; wherein the forming the source region made of GeSn comprises: implanting precursors in the substrate on the other side of the gate stack structure; and performing a laser rapid annealing such that the precursors react to produce GeSn alloy, thereby to constitute a source region; and wherein the step of implanting precursors further comprises: performing a pre-amorphization ion implantation, so as to form an amorphized region in the substrate; and implanting Sn in the amorphized region.

    摘要翻译： 本发明公开了一种制造半导体器件的方法，包括：在衬底上形成栅叠层结构; 在所述栅极堆叠结构的一侧上的所述衬底中形成漏区; 以及在所述栅堆叠结构的另一侧的所述衬底中形成由GeSn制成的源区; 其中形成由GeSn制成的源极区域包括：在所述栅极堆叠结构的另一侧上的衬底中注入前体; 并进行激光快速退火，使得前体反应生成GeSn合金，从而构成源极区; 并且其中植入前体的步骤还包括：进行前非晶化离子注入，以在所述基底中形成非晶化区域; 并将Sn注入到非晶化区域中。