公开(公告)号：US09963780B2

公开(公告)日：2018-05-08

申请号：US14958052

申请日：2015-12-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: C23C16/00 ,  C23C16/06 ,  C23C18/31 ,  C23C14/02 ,  C23C14/14 ,  C23C16/02

CPC classification number: C23C16/06 ,  C23C14/024 ,  C23C14/14 ,  C23C16/0272 ,  C23C18/1689 ,  C23C18/1692 ,  C23C18/31 ,  C23C18/50

Abstract: A method for forming metal on a dielectric includes forming a seed layer on a surface including a reactant element. A first metal layer is formed on the seed layer wherein the first metal layer wets the seed layer. A second metal layer is formed on the first metal layer wherein the second metal layer wets the first metal layer. Diffuse the reactant element of the seed layer into the first metal layer by annealing to convert the first metal layer to a dielectric layer.

公开(公告)号：US09960348B2

公开(公告)日：2018-05-01

申请号：US15183421

申请日：2016-06-15

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L27/105

CPC classification number: H01L43/12 ,  H01L27/1052 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

Abstract: Embodiments are directed to a magnetic tunnel junction (MTJ) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (PMA) reference layer and an interfacial reference layer. The MTJ further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer. The tunnel barrier is configured to enable electrons to tunnel through the tunnel barrier between the interfacial reference layer and the free layer. A first in-situ alignment is provided between a tunnel barrier lattice structure of the tunnel barrier and an interfacial reference layer lattice structure of the interfacial reference layer. A second in-situ alignment is provided between the tunnel barrier lattice structure of the tunnel barrier and a free layer lattice structure of the free layer. The PMA reference layer lattice structure is not aligned with the interfacial reference layer lattice structure.

公开(公告)号：US09853208B2

公开(公告)日：2017-12-26

申请号：US14585435

申请日：2014-12-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/12 ,  H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  H01L27/105 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01L27/1052 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08

Abstract: Embodiments are directed to a magnetic tunnel junction (MTJ) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (PMA) reference layer and an interfacial reference layer. The MTJ further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer. The tunnel barrier is configured to enable electrons to tunnel through the tunnel barrier between the interfacial reference layer and the free layer. A first in-situ alignment is provided between a tunnel barrier lattice structure of the tunnel barrier and an interfacial reference layer lattice structure of the interfacial reference layer. A second in-situ alignment is provided between the tunnel barrier lattice structure of the tunnel barrier and a free layer lattice structure of the free layer. The PMA reference layer lattice structure is not aligned with the interfacial reference layer lattice structure.

公开(公告)号：US20170338402A1

公开(公告)日：2017-11-23

申请号：US15157795

申请日：2016-05-18

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Kwangseok Kim ,  Younghyun Kim ,  Jung-Hyuk Lee ,  Jeong-Heon Park

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: A method for manufacturing a semiconductor device includes forming a magnetic tunnel junction (MTJ) structure comprising a magnetic fixed layer, a non-magnetic barrier layer on the non-magnetic barrier layer and the magnetic free layer on the non-magnetic barrier layer, forming an oxide cap layer on the magnetic free layer, and forming a noble metal cap layer on the oxide cap layer.

公开(公告)号：US09799823B1

公开(公告)日：2017-10-24

申请号：US15094059

申请日：2016-04-08

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Kwangseok Kim ,  Younghyun Kim ,  Junghyuk Lee ,  Luqiao Liu ,  Jeong-Heon Park

IPC: H01L43/10 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/12 ,  H01L43/08 ,  H01L43/10

Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A magnetic reference layer is formed adjacent to a tunnel barrier layer. The magnetic reference layer includes a pinned layer, a spacer layer adjacent to the pinned layer, and a polarizing enhancement layer adjacent to the spacer layer. A magnetic free layer is formed adjacent to the tunnel barrier layer so as to be opposite the magnetic reference layer.

公开(公告)号：US20170294573A1

公开(公告)日：2017-10-12

申请号：US15094064

申请日：2016-04-08

Applicant: International Business Machines Corporation ,  Samsung Electronics Co., Ltd.

Inventor： Guohan Hu ,  Younghyun Kim ,  Daniel C. Worledge

IPC: H01L43/08 ,  H01L27/24 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L43/10

Abstract: Techniques relate to forming a magnetic tunnel junction (MTJ). A synthetic antiferromagnetic reference layer is adjacent to a tunnel barrier layer. The synthetic antiferromagnetic reference layer includes a first magnetic layer, a second magnetic layer, and a reference spacer layer sandwiched between the first magnetic layer and the second magnetic layer. A magnetic free layer is adjacent to the tunnel barrier layer so as to be opposite the synthetic antiferromagnetic reference layer. The synthetic antiferromagnetic reference layer has a thickness of at least one of 3 nanometers (nm), 4 nm, and 3-4 nm.

公开(公告)号：US09715917B2

公开(公告)日：2017-07-25

申请号：US15390121

申请日：2016-12-23

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Luqiao Liu ,  Jonathan Z. Sun ,  Daniel C. Worledge

IPC: G11C11/16 ,  H01L43/10

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: Magnetic memory devices having an antiferromagnetic reference layer based on Co and Ir are provided. In one aspect, a magnetic memory device includes a reference magnetic layer having multiple Co-containing layers oriented in a stack, wherein adjacent Co-containing layers in the stack are separated by an Ir-containing layer such that the adjacent Co-containing layers in the stack are anti-parallel coupled by the Ir-containing layer therebetween; and a free magnetic layer separated from the reference magnetic layer by a barrier layer. A method of writing data to a magnetic random access memory device having at least one of the present magnetic memory cells is also provided.

公开(公告)号：US20170194556A1

公开(公告)日：2017-07-06

申请号：US15467609

申请日：2017-03-23

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Stephen L. Brown ,  Guohan Hu ,  Jonathan Z. Sun ,  Daniel C. Worledge

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

Abstract: A method for forming a memory device that includes providing a free layer of an alloy of cobalt (Co), iron (Fe) and boron (B) overlying a reference layer; and forming metal layer comprising a boron (B) sink composition atop the free layer. Boron (B) may be diffused from the free layer to the metal layer comprising the boron sink composition. At least a portion of the metal layer including the boron (B) sink composition is removed. A metal oxide is formed atop the free layer. The free layer may be a crystalline cobalt and iron alloy. An interface between the metal oxide and free layer can provide perpendicular magnetic anisotropy character.

公开(公告)号：US20170084830A1

公开(公告)日：2017-03-23

申请号：US15364409

申请日：2016-11-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Guohan Hu

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of making a spin-torque transfer magnetic random access memory device (STT MRAM) device includes forming a tunnel barrier layer on a reference layer; forming a free layer on the tunnel barrier layer, the free layer comprising a cobalt iron boron (CoFeB) alloy layer and an iron (Fe) layer; and performing a sputtering process to form a metal oxide layer on the Fe layer.

公开(公告)号：US09564580B2

公开(公告)日：2017-02-07

申请号：US14584001

申请日：2014-12-29

Applicant: International Business Machines Corporation

Inventor： Guohan Hu ,  Daniel C. Worledge

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic layer. Second fixed layers are disposed below the free magnetic layer. The first fixed layers and the second fixed layers both comprise a rare earth element.

Abstract translation: 一种机制涉及磁随机存取存储器（MRAM）。 提供自由磁性层，第一固定层设置在自由磁性层的上方。 第二固定层设置在自由磁性层的下方。 第一固定层和第二固定层都包括稀土元素。