公开(公告)号：US5966620A

公开(公告)日：1999-10-12

申请号：US970356

申请日：1997-11-14

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara

IPC分类号： H01L21/304 ,  H01L21/322 ,  H01L21/762 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/3226 ,  H01L21/304 ,  H01L21/76254 ,  H01L21/76259

摘要： A novel process for producing a semiconductor article is disclosed which comprises the steps of preparing a first substrate constituted of a silicon substrate, a nonporous semiconductor layer formed on the silicon substrate, and an ion implantation layer formed in at least one of the silicon substrate and the nonporous semiconductor layer; bonding the first substrate to a second substrate to obtain a multiple layer structure with the nonporous semiconductor layer placed inside; separating the multiple layer structure at the ion implantation layer; and removing the ion implantation layer remaining on the separated second substrate.

摘要翻译： 公开了一种制造半导体产品的新颖方法，其包括以下步骤：制备由硅衬底，形成在硅衬底上的无孔半导体层构成的第一衬底和形成在至少一个硅衬底和 无孔半导体层; 将第一基板接合到第二基板以获得多孔层结构，其中无孔半导体层位于其内部; 在离子注入层分离多层结构; 以及去除残留在分离的第二衬底上的离子注入层。

公开(公告)号：US5853478A

公开(公告)日：1998-12-29

申请号：US471160

申请日：1995-06-06

申请人： Takao Yonehara ,  Yasuhiro Naruse

发明人： Takao Yonehara ,  Yasuhiro Naruse

IPC分类号： H01L21/205 ,  C30B23/02 ,  C30B25/02 ,  C30B25/10 ,  C30B25/18 ,  H01L21/20 ,  H01L21/84 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/78 ,  C30B23/002 ,  C30B23/02 ,  C30B25/02 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  H01L21/02376 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02543 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/78654

摘要： A method for forming a crystal, which comprises applying a crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a single crystal from said single nucleus.

摘要翻译： 一种晶体的形成方法，其特征在于，在具有自由面的基板上进行晶体形成处理，所述基板具有小的成核密度的沉积面（SNDS）和仅具有足够小的面积的沉积表面（SNDL），仅用于晶体生长 具有比所述沉积表面（SNDS）的成核密度（NDS）更大的成核密度（NDL）的单个核并且彼此相邻布置，从而从所述单个核生长单晶。

公开(公告)号：US5723348A

公开(公告)日：1998-03-03

申请号：US598623

申请日：1996-02-12

申请人： Hideya Kumomi ,  Takao Yonehara

发明人： Hideya Kumomi ,  Takao Yonehara

IPC分类号： H01L27/15 ,  H01L33/34 ,  H01L21/265 ,  H01L21/00 ,  H01L21/203 ,  H01L21/205

CPC分类号： H01L33/343 ,  H01L27/15 ,  Y10S148/077

摘要： A light-emitting device, in which a film obtained by ion-implanting ions that can become a semiconductor material into an oxide film forms at least a part of a light-emitting layer.

摘要翻译： 通过将可以成为半导体材料的离子离子注入氧化膜而获得的膜形成至少一部分发光层的发光器件。

公开(公告)号：US5712199A

公开(公告)日：1998-01-27

申请号：US466761

申请日：1995-06-06

申请人： Katsumi Nakagawa ,  Takao Yonehara

发明人： Katsumi Nakagawa ,  Takao Yonehara

IPC分类号： H01L31/04 ,  C30B15/00 ,  C30B15/34 ,  C30B19/06 ,  H01L21/208 ,  H01L31/0392 ,  H01L31/18

CPC分类号： H01L31/1876 ,  C30B15/007 ,  C30B15/34 ,  H01L31/0392 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of making a semiconductor body includes the steps of preparing a sheet-like substrate having an insulating film and holes which pass through the insulating film, the holes being disposed at a uniform density, preparing a solution in which a semiconductor material is dissolved, and conveying the sheet-like substrate along a surface of the solution so as to grow a single crystal nucleus from each of the holes and thereby form a set of single crystal semiconductors on the sheet-like substrate. A solar cell can be manufactured by forming a semiconductor active area on the sheet-like support member made of a conductive material by a process containing the above-described semiconductor body forming method, and then by forming an electrode which makes a pair with the sheet-like support member.

摘要翻译： 制造半导体本体的方法包括以下步骤：制备具有绝缘膜的片状基材和穿过绝缘膜的孔，孔以均匀的密度设置，制备半导体材料溶解的溶液， 并且沿着溶液的表面输送片状基材，以从每个孔生长单晶核，从而在片状基材上形成一组单晶半导体。 可以通过通过包含上述半导体本体形成方法的工艺在由导电材料制成的片状支撑构件上形成半导体有源区域来制造太阳能电池，然后通过形成与片材成对的电极 类支撑构件。

公开(公告)号：US5679475A

公开(公告)日：1997-10-21

申请号：US368539

申请日：1995-01-04

申请人： Kenji Yamagata ,  Takao Yonehara

发明人： Kenji Yamagata ,  Takao Yonehara

IPC分类号： H01L21/02 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12 ,  B32B15/00

CPC分类号： H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  H01L2221/68363 ,  Y10S438/96 ,  Y10S438/977 ,  Y10T428/249953 ,  Y10T428/249967

摘要： A process for preparing a semiconductor substrate comprises a step of porousifying a silicon monocrystalline substrate to form a porous layer, a step of making a silicon monocrystalline thin film to epitaxially grow on a surface of the porous layer, a step of oxidizing the surface of the epitaxial growth layer, a step of forming a deposited film on the oxidized surface, thereby obtaining a first substrate, a step of closely contacting the deposited film of the first substrate to a second substrate, a step of heat treating the closely contacted substrates and a step of selectively etching the porous layer.

摘要翻译： 制备半导体衬底的方法包括使硅单晶衬底多孔化以形成多孔层的步骤，使硅单晶薄膜在多孔层的表面上外延生长的步骤，使多孔层的表面氧化的步骤 外延生长层，在氧化表面上形成沉积膜的步骤，从而获得第一基板，将第一基板的沉积膜紧密接触第二基板的步骤，对紧密接触的基板进行热处理的步骤和 选择性地蚀刻多孔层的步骤。

公开(公告)号：US5670411A

公开(公告)日：1997-09-23

申请号：US444015

申请日：1995-05-18

申请人： Takao Yonehara ,  Kenji Yamagata

发明人： Takao Yonehara ,  Kenji Yamagata

IPC分类号： H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12 ,  H01L21/76

CPC分类号： H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  Y10S148/012 ,  Y10S438/96

摘要： A process for forming a semiconductor substrate wherein an epitaxial layer is formed on a porous layer of a first substrate, an insulating layer is formed on the epitaxial layer, the insulating layer is bonded to a second substrate and the porous layer is selectively removed.

摘要翻译： 一种用于形成半导体衬底的方法，其中在第一衬底的多孔层上形成外延层，在外延层上形成绝缘层，绝缘层与第二衬底结合，并且选择性地去除多孔层。

公开(公告)号：US5531182A

公开(公告)日：1996-07-02

申请号：US241678

申请日：1994-05-12

申请人： Takao Yonehara

发明人： Takao Yonehara

IPC分类号： H01L21/20

CPC分类号： H01L21/2022 ,  Y10S117/913 ,  Y10S148/003

摘要： Polycrystalline silicon thin-films having a large grain size are formed by preparing a substrate of amorphous surface comprising first regions containing tin atoms at a higher content and second regions containing tin atoms at a lower content or not substantially containing them, and then heat-treating the substrate to grow crystal grains from crystal nuclei formed only in the first regions.

摘要翻译： 通过制备包含含有较高含量的锡原子的第一区域和含有较低含量的锡原子或基本上不含有它们的第二区域的非晶表面的基底，然后进行热处理，形成具有大晶粒尺寸的多晶硅薄膜 该衬底从仅在第一区域形成的晶核生长晶粒。

公开(公告)号：US5492859A

公开(公告)日：1996-02-20

申请号：US369325

申请日：1995-01-06

申请人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida

发明人： Kiyofumi Sakaguchi ,  Takao Yonehara ,  Shoji Nishida

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/306 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/2022 ,  H01L21/30604 ,  H01L21/76251 ,  H01L21/76256 ,  Y10S438/977

摘要： A process for producing a semiconductor device substrate comprises the steps of making a first substrate member porous, forming an insulating layer on a second substrate member, forming an amorphous layer on the insulating layer on the second substrate member, bonding the porous first substrate member to the amorphous layer at a temperature of an atmosphere in which the amorphous layer at least does not crystallize, causing solid-phase epitaxial growth of the amorphous layer by utilizing the porous first substrate member as crystal growth seed, and removing the bonded first substrate member after completion of the epitaxial growth by chemical etching.

摘要翻译： 一种制造半导体器件基板的方法包括以下步骤：使第一基板部件多孔，在第二基板部件上形成绝缘层，在第二基板部件上的绝缘层上形成非晶层，将多孔第一基板部件接合到 在非晶层至少不结晶的气氛的温度下的非晶层，通过利用多孔第一基板构件作为晶体生长种子，引起非晶层的固相外延生长，以及在第一基板构件之后移除结合的第一基板构件 通过化学蚀刻完成外延生长。

公开(公告)号：US5484746A

公开(公告)日：1996-01-16

申请号：US270309

申请日：1994-07-05

申请人： Takeshi Ichikawa ,  Takao Yonehara

发明人： Takeshi Ichikawa ,  Takao Yonehara

IPC分类号： C30B1/02 ,  H01L21/20 ,  H01L21/324 ,  H01L21/84 ,  H01L21/203

CPC分类号： H01L21/2022

摘要： A process for forming a semiconductor thin film by forming an amorphous semiconductor film on a substrate having a surface comprising an amorphous insulating material and seed crystals arranged at desired positions, applying heat treatment on the amorphous semiconductor film and growing crystals by solid phase growth with the seed crystals as the origination points is characterized in that high frequency energies with different frequencies are supplied to a susceptor having the substrate mounted thereon and a target holder to irradiate the ions generated between the susceptor and the target holder to the substrate and remove the surface adherents on the substrate, and subsequently an amorphous semiconductor film is formed on the substrate within the same apparatus.

摘要翻译： 一种形成半导体薄膜的方法，该方法是在具有包括非晶绝缘材料的表面的基底上形成非晶半导体膜，并将其布置在所需位置，对非晶半导体膜进行热处理，并通过固相生长生长晶体 作为起点的晶种的特征在于，将具有不同频率的高频能量供给到其上安装有基板的基座和目标支架，以将基座和目标支架之间产生的离子照射到基板上，并去除表面附着物 在衬底上，随后在同一设备内的衬底上形成非晶半导体膜。

公开(公告)号：US5363799A

公开(公告)日：1994-11-15

申请号：US979376

申请日：1992-11-19

申请人： Takao Yonehara ,  Yuji Nishigaki ,  Kenji Yamagata

发明人： Takao Yonehara ,  Yuji Nishigaki ,  Kenji Yamagata

IPC分类号： C30B25/18 ,  H01L21/20 ,  C30B25/02

CPC分类号： C30B25/18 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  Y10S117/913

摘要： A method for growth of a crystal wherein a monocrystalline seed is arranged on a substrate and a monocrystal is permitted to grow with the seed as the originating point, comprises the step of:(1) providing a substrate having a surface of smaller nucleation density;(2) arranging on the surface of the substrate primary seeds having sufficiently fine surface area to be agglomerated;(3) applying heat treatment to the primary seeds to cause agglomeration to occur, thereby forming a monocrystalline seed with a controlled face orientation; and(4) applying crystal growth treatment to permit a monocrystal to grow with the monocrystalline seed as the originating point.

摘要翻译： 一种生长晶体的方法，其中单晶种子布置在基底上并且允许单晶以种子作为起点生长，包括以下步骤：（1）提供具有较小成核密度的表面的基底; （2）在基材的表面上配置具有足够细小表面积的初级种子以使其团聚; （3）对初级种子进行热处理以引起团聚，从而形成具有受控面取向的单晶种子; 和（4）应用晶体生长处理以允许单晶以单晶种子为起点生长。