公开(公告)号：US20120006255A1

公开(公告)日：2012-01-12

申请号：US13257742

申请日：2010-11-12

申请人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada

发明人： Taro Nishiguchi ,  Makoto Sasaki ,  Shin Harada

IPC分类号： C30B23/02

CPC分类号： C30B29/36 ,  C30B23/025

摘要： A seed crystal having a frontside surface and a backside surface is prepared. Surface roughness of the backside surface of the seed crystal is increased. A coating film including carbon is formed on the backside surface of the seed crystal. The coating film and a pedestal are brought into contact with each other with an adhesive interposed therebetween. The adhesive is cured to fix the seed crystal to the pedestal. A single crystal is grown on the seed crystal. Before the growth is performed, a carbon film is formed by carbonizing the coating film.

摘要翻译： 准备具有前表面和背面的晶种。 晶种背面的表面粗糙度增加。 在籽晶的背面形成有包含碳的涂膜。 涂膜和底座之间夹有粘合剂使其彼此接触。 固化粘合剂以将晶种固定到基座。 在晶种上生长单晶。 在生长之前，通过碳化涂膜形成碳膜。

公开(公告)号：US20120003823A1

公开(公告)日：2012-01-05

申请号：US13255314

申请日：2010-09-28

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Yasuo Namikawa

IPC分类号： H01L21/20

CPC分类号： H01L21/02378 ,  H01L21/0243 ,  H01L21/02529 ,  H01L21/02612 ,  H01L21/02614 ,  H01L21/02656 ,  H01L21/02667 ,  H01L21/047 ,  H01L29/66068

摘要： A combined substrate is prepared which has a supporting portion and first and second silicon carbide substrates. The first silicon carbide substrate has a first front-side surface and a first side surface. The second silicon carbide substrate has a second front-side surface and a second side surface. The second side surface is disposed such that a gap having an opening between the first and second front-side surfaces is formed between the first side surface and the second side surface. By introducing melted silicon from the opening into the gap, a silicon connecting portion is formed to connect the first and second side surfaces so as to close the opening. By carbonizing the silicon connecting portion, a silicon carbide connecting portion is formed.

摘要翻译： 制备具有支撑部分和第一和第二碳化硅衬底的组合衬底。 第一碳化硅衬底具有第一正面和第一侧面。 第二碳化硅衬底具有第二前侧表面和第二侧表面。 第二侧面设置成在第一侧表面和第二侧表面之间形成有在第一和第二前侧表面之间具有开口的间隙。 通过将来自开口的熔融硅引入到间隙中，形成硅连接部，以连接第一和第二侧表面以封闭开口。 通过碳化硅连接部分，形成碳化硅连接部分。

公开(公告)号：US20110306181A1

公开(公告)日：2011-12-15

申请号：US13202437

申请日：2010-09-28

申请人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

发明人： Makoto Sasaki ,  Shin Harada ,  Taro Nishiguchi ,  Kyoko Okita ,  Hiroki Inoue ,  Yasuo Namikawa

IPC分类号： H01L21/762

CPC分类号： H01L29/7802 ,  C30B29/36 ,  C30B33/06 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/2007 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

摘要： A method of manufacturing a silicon carbide substrate includes the steps of: preparing a base substrate formed of silicon carbide and a SiC substrate formed of single crystal silicon carbide; fabricating a stacked substrate by stacking the base substrate and the SiC substrate to have their main surfaces in contact with each other; heating the stacked substrate to join the base substrate and the SiC substrate and thereby fabricating a joined substrate; and heating the joined substrate such that a temperature difference is formed between the base substrate and the SiC substrate, and thereby discharging voids formed at the step of fabricating the joined substrate at an interface between the base substrate and the SiC substrate to the outside.

摘要翻译： 制造碳化硅衬底的方法包括以下步骤：制备由碳化硅形成的基底衬底和由单晶碳化硅形成的SiC衬底; 通过堆叠基底基板和SiC基板以使它们的主表面彼此接触来制造堆叠的基板; 加热堆叠的基板以连接基底基板和SiC基板，从而制造接合的基板; 并且加热接合的基板，使得在基底基板和SiC基板之间形成温度差，从而将在基底基板和SiC基板之间的界面处制造接合基板的步骤中形成的空隙排出到外部。

公开(公告)号：US20110262680A1

公开(公告)日：2011-10-27

申请号：US13093116

申请日：2011-04-25

申请人： Taro Nishiguchi ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki

发明人： Taro Nishiguchi ,  Shin Harada ,  Hiroki Inoue ,  Makoto Sasaki

IPC分类号： C30B23/02 ,  B32B3/14

CPC分类号： H01L29/7802 ,  C30B23/02 ,  C30B29/36 ,  H01L21/02002 ,  H01L29/1608 ,  H01L29/66068

摘要： A sublimation preventing layer is formed to cover a first region of a main surface of a material substrate. First and second single-crystal layers are arranged on the material substrate such that a gap between first and second side surfaces is located over the sublimation preventing layer. The material substrate and the first and second single-crystal layers are heated to sublimate silicon carbide from a second region of the main surface and recrystallize the sublimated silicon carbide on the first backside surface of the first single-crystal layer and the second backside surface of the second single-crystal layer, thereby forming a base substrate connected to each of the first and second backside surfaces. This can prevent formation of voids in a silicon carbide substrate having such a plurality of single-crystal layers.

摘要翻译： 形成升华防止层以覆盖材料基板的主表面的第一区域。 第一和第二单晶层布置在材料基板上，使得第一和第二侧表面之间的间隙位于升华防止层的上方。 加热材料基板和第一和第二单晶层从主表面的第二区域升华碳化硅，并将第一单晶层的第一背面上的升华的碳化硅和第一单晶层的第二背面 第二单晶层，从而形成连接到第一和第二背面中的每一个的基底基板。 这可以防止在具有多个单晶层的碳化硅衬底中形成空隙。

公开(公告)号：US20110229719A1

公开(公告)日：2011-09-22

申请号：US13048064

申请日：2011-03-15

申请人： Taro NISHIGUCHI ,  Shin Harada

发明人： Taro NISHIGUCHI ,  Shin Harada

IPC分类号： C30B23/02 ,  B32B9/04 ,  B32B15/04

CPC分类号： C30B29/36 ,  C30B23/00 ,  C30B23/025 ,  Y10T428/30 ,  Y10T428/31678

摘要： A manufacturing method for a crystal, a manufacturing apparatus for a crystal, and a stacked film capable of growing a high-quality crystal are provided. The manufacturing method for a crystal includes the steps of: preparing a seed crystal having a frontside surface and a backside surface opposite to the frontside surface; forming at least one film selected from the group consisting of a hard carbon film, a diamond film, a tantalum film, and a tantalum carbide film on the backside surface of the seed crystal; and growing the crystal on the frontside surface of the seed crystal.

摘要翻译： 提供了一种用于晶体的制造方法，用于晶体的制造装置和能够生长高品质晶体的叠层膜。 晶体的制造方法包括以下步骤：制备具有前侧表面和与前侧表面相对的背面的晶种; 在晶种的背面上形成选自硬碳膜，金刚石膜，钽膜和碳化钽膜中的至少一种膜; 并在晶体的前侧表面生长晶体。

公开(公告)号：US07759211B2

公开(公告)日：2010-07-20

申请号：US12077825

申请日：2008-03-20

申请人： Kazuhiro Fujikawa ,  Shin Harada

发明人： Kazuhiro Fujikawa ,  Shin Harada

IPC分类号： H01L21/266

CPC分类号： H01L21/266 ,  H01L21/046 ,  H01L21/0465

摘要： There is provided a method of fabricating semiconductor devices that allows ion implantation to be performed at high temperature with ions accelerated with high energy to help to introduce dopant in a semiconductor substrate, in particular a SiC semiconductor substrate, at a selected region to sufficient depth. To achieve this the method includes the steps of: providing the semiconductor substrate at a surface thereof with a mask layer including a polyimide resin film, or a SiO2 film and a thin metal film; and introducing dopant ions.

摘要翻译： 提供一种制造半导体器件的方法，其允许在高温下用高能量加速的离子进行离子注入，以帮助在半导体衬底（特别是SiC半导体衬底）中将掺杂剂在选定的区域引入足够的深度。 为了实现这一点，该方法包括以下步骤：在半导体衬底的表面设置包括聚酰亚胺树脂膜或SiO 2膜和薄金属膜的掩模层; 并引入掺杂离子。

公开(公告)号：US20100123172A1

公开(公告)日：2010-05-20

申请号：US12596958

申请日：2008-10-03

申请人： Kazuhiro Fujikawa ,  Shin Harada

发明人： Kazuhiro Fujikawa ,  Shin Harada

IPC分类号： H01L29/772 ,  H01L29/812 ,  H01L21/338 ,  H01L29/78 ,  H01L21/336

CPC分类号： H01L29/808 ,  H01L21/047 ,  H01L29/045 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/812

摘要： A substrate composed of hexagonally crystalline SiC is prepared such that its main surface is in the direction at which the minimum angle between the main surface and a plane perpendicular to the (0001) plane is one degree or less, for example, in the direction at which the minimum angle between the main surface and the [0001] direction, which is perpendicular to the (0001) plane, is one degree or less. A horizontal semiconductor device is formed on one main surface of the substrate prepared by the foregoing method. Thus, it was possible to improve the value of breakdown voltage significantly over the horizontal semiconductor device in which the main surface of the substrate composed of hexagonally crystalline SiC is in the direction along the (0001) direction.

摘要翻译： 制备由六角晶SiC组成的基板，使得其主表面处于主表面与垂直于（0001）面的平面之间的最小角度为1度或更小的方向，例如在 其中主表面与[0001]方向之间的垂直于（0001）面的最小角度为1度以下。 在通过上述方法制备的基板的一个主表面上形成水平半导体器件。 因此，可以显着地提高击穿电压的值，其中由六边形结晶的SiC构成的基板的主表面沿着（0001）方向的方向。

公开(公告)号：US07671387B2

公开(公告)日：2010-03-02

申请号：US12179320

申请日：2008-07-24

申请人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

发明人： Kazuhiro Fujikawa ,  Shin Harada ,  Kenichi Hirotsu ,  Satoshi Hatsukawa ,  Takashi Hoshino ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC分类号： H01L29/80

CPC分类号： H01L29/0634 ,  H01L29/1058 ,  H01L29/1066 ,  H01L29/42316 ,  H01L29/66893 ,  H01L29/808

摘要： A lateral junction field effect transistor includes a first gate electrode layer arranged in a third semiconductor layer between source/drain region layers, having a lower surface extending on the second semiconductor layer, and doped with p-type impurities more heavily than the second semiconductor layer, and a second gate electrode layer arranged in a fifth semiconductor layer between the source/drain region layers, having a lower surface extending on a fourth semiconductor layer, having substantially the same concentration of p-type impurities as the first gate electrode layer, and having the same potential as the first gate electrode layer. Thereby, the lateral junction field effect transistor has a structure, which can reduce an on-resistance while maintaining good breakdown voltage properties.

摘要翻译： 横向结型场效应晶体管包括布置在源/漏区域之间的第三半导体层中的第一栅电极层，具有在第二半导体层上延伸的下表面，并且掺杂有比第二半导体层更重的p型杂质 以及布置在源极/漏极区域之间的第五半导体层中的第二栅极电极层，具有在第四半导体层上延伸的下表面，具有与第一栅极电极层基本相同的p型杂质浓度，以及 具有与第一栅极电极层相同的电位。 因此，横向结型场效应晶体管具有可以在保持良好的击穿电压特性的同时降低导通电阻的结构。

公开(公告)号：US07528426B2

公开(公告)日：2009-05-05

申请号：US11337143

申请日：2006-01-20

申请人： Shin Harada ,  Kenichi Hirotsu ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

发明人： Shin Harada ,  Kenichi Hirotsu ,  Hiroyuki Matsunami ,  Tsunenobu Kimoto

IPC分类号： H01L29/808

CPC分类号： H01L29/808 ,  H01L29/0623 ,  H01L29/1066 ,  H01L29/1608

摘要： A lateral JFET has a basic structure including an n-type semiconductor layer (3) formed of an n-type impurity region and a p-type semiconductor layer formed of a p-type impurity region on the n-type semiconductor layer (3). Moreover, in the p-type semiconductor layer, there are provided a p+-type gate region layer (7) extending into the n-type semiconductor layer (3) and containing p-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3) and an n+-type drain region layer (9) spaced from the p+-type gate region layer (7) by a predetermined distance and containing n-type impurities of an impurity concentration higher than that of the n-type semiconductor layer (3). With this structure, the lateral JFET can be provided that has an ON resistance further decreased while maintaining a high breakdown voltage performance.

摘要翻译： 横向JFET具有包括由n型杂质区形成的n型半导体层（3）和在n型半导体层（3）上由p型杂质区形成的p型半导体层的基本结构， 。 此外，在p型半导体层中，设置有延伸到n型半导体层（3）中的p +型栅极区域（7），并且含有比n的杂质浓度高的p型杂质 型半导体层（3）和与p +型栅极区域（7）间隔预定距离的n +型漏极区域（9），并且含有杂质浓度高于n的n型杂质 型半导体层（3）。 利用这种结构，可以提供横向JFET，其具有进一步降低的导通电阻，同时保持高的击穿电压性能。

公开(公告)号：US20080254603A1

公开(公告)日：2008-10-16

申请号：US12077825

申请日：2008-03-20

申请人： Kazuhiro Fujikawa ,  Shin Harada

发明人： Kazuhiro Fujikawa ,  Shin Harada

IPC分类号： H01L21/266

CPC分类号： H01L21/266 ,  H01L21/046 ,  H01L21/0465

摘要： There is provided a method of fabricating semiconductor devices that allows ion implantation to be performed at high temperature with ions accelerated with high energy to help to introduce dopant in a semiconductor substrate, in particular a SiC semiconductor substrate, at a selected region to sufficient depth. To achieve this the method includes the steps of: providing the semiconductor substrate at a surface thereof with a mask layer including a polyimide resin film, or a SiO2 film and a thin metal film; and introducing dopant ions.

摘要翻译： 提供一种制造半导体器件的方法，其允许在高温下用高能量加速的离子进行离子注入，以帮助在半导体衬底（特别是SiC半导体衬底）中将掺杂剂在选定的区域引入足够的深度。 为了实现这一点，该方法包括以下步骤：在其表面上为半导体衬底提供包括聚酰亚胺树脂膜或SiO 2膜和薄金属膜的掩模层; 并引入掺杂离子。