公开(公告)号：US20180040640A1

公开(公告)日：2018-02-08

申请号：US15664703

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kei Takahashi ,  Hiroyuki Miyake

IPC: H01L27/12 ,  G09G3/3233

CPC classification number: H01L27/1225 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  G09G2300/0426 ,  G09G2300/0465 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/08 ,  G09G2330/023 ,  G09G2354/00 ,  G11C19/28 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1262

Abstract: A display device including a display portion with an extremely high resolution is provided. The display device includes a pixel circuit and a light-emitting element. The pixel circuit includes a first element layer including a first transistor and a second element layer including a second transistor. A channel formation region of the first transistor includes silicon. The first transistor has a function of driving the light-emitting element. The second transistor functions as a switch. A channel formation region of the second transistor includes a metal oxide. The metal oxide functions as a semiconductor. The second element layer is provided over the first element layer.

公开(公告)号：US09880437B2

公开(公告)日：2018-01-30

申请号：US14551914

申请日：2014-11-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji Kusunoki ,  Hiroyuki Miyake

IPC: G02F1/1343 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1368

CPC classification number: G02F1/136286 ,  G02F1/134336 ,  G02F1/1368 ,  G02F2001/134345 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: A transistor includes a gate electrode over a substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. A capacitor includes a metal oxide film over the gate insulating film and in contact with one of the pair of conductive films, an inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. A first gate line serving also as a gate electrode is connected so as to be able to select three sub-pixels of four sub-pixels, and a second gate line is connected so as to be able to select the remaining one of the four sub-pixels and also one sub-pixel in the next row.

公开(公告)号：US09842863B2

公开(公告)日：2017-12-12

申请号：US15134910

申请日：2016-04-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hajime Kimura ,  Hiroyuki Miyake ,  Jun Koyama

IPC: H01L27/12 ,  H01L27/32 ,  H01L27/02

CPC classification number: H01L27/1244 ,  H01L27/0296 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3276 ,  H01L2227/323

Abstract: To provide a novel display device. The display device includes a pixel portion, a driver circuit portion that is provided outside the pixel portion, and a protection circuit that is electrically connected to one of or both the pixel portion and the driver circuit portion and includes a pair of electrodes. The pixel portion includes pixel electrodes arranged in a matrix and transistors electrically connected to the pixel electrodes. The transistor includes a first insulating layer containing nitrogen and silicon, and a second insulating layer containing oxygen, nitrogen, and silicon. The protection circuit includes the first insulating layer between the pair of electrodes.

公开(公告)号：US09755633B2

公开(公告)日：2017-09-05

申请号：US14976201

申请日：2015-12-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hajime Kimura ,  Hiroyuki Miyake

IPC: H03B1/00 ,  H03K3/00 ,  G09G3/36 ,  G06F3/038 ,  G09G5/00 ,  H03K17/14

CPC classification number: H03K17/145

Abstract: To provide a semiconductor device in which external correction can be performed, the area occupied by a read circuit is reduced, and power consumption is reduced. One embodiment of the semiconductor device includes a pixel and a read circuit. The pixel includes a transistor and a display element. The read circuit includes a function selection portion and an operational amplifier. The transistor is electrically connected to the function selection portion through a wiring. The operational amplifier is electrically connected to the function selection portion. The function selection portion includes at least one switch. The function selection portion can select a function of the read circuit by controlling the switch.

公开(公告)号：US09747852B2

公开(公告)日：2017-08-29

申请号：US15007999

申请日：2016-01-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Jun Koyama ,  Hiroyuki Miyake

IPC: G09G3/36 ,  G06F3/041 ,  G06F3/042 ,  G06F3/044 ,  G02F1/1345

Abstract: The liquid crystal display device includes a first substrate provided with a terminal portion, a switching transistor, a driver circuit portion, and a pixel circuit portion including a pixel transistor and a plurality of pixels, a second substrate provided with a common electrode electrically connected to the terminal portion through the switching transistor, and liquid crystal between a pixel electrode and the common electrode. In a period during which a still image is switched to a moving image, the following steps are sequentially performed: a first step of supplying the common potential to the common electrode; a second step of supplying a power supply voltage to the driver circuit portion; a third step of supplying a clock signal to the driver circuit portion; and a fourth step of supplying a start pulse signal to the driver circuit portion.

公开(公告)号：US09728556B2

公开(公告)日：2017-08-08

申请号：US15296395

申请日：2016-10-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Kenichi Okazaki ,  Masahiko Hayakawa ,  Shinpei Matsuda

IPC: H01L27/12 ,  G02F1/1343 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G02F1/134309 ,  G02F1/1368 ,  H01L27/1237 ,  H01L27/124 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided. Further, a semiconductor device including a transistor having excellent electrical characteristics is provided. The semiconductor device includes a transistor having a dual-gate structure in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode; gate insulating films are provided between the oxide semiconductor film and the first gate electrode and between the oxide semiconductor film and the second gate electrode; and in the channel width direction of the transistor, the first or second gate electrode faces a side surface of the oxide semiconductor film with the gate insulating film between the oxide semiconductor film and the first or second gate electrode.

公开(公告)号：US20170125122A1

公开(公告)日：2017-05-04

申请号：US15333723

申请日：2016-10-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroyuki Miyake

IPC: G11C19/28 ,  H01L29/786 ,  H01L27/12

CPC classification number: G11C19/28 ,  G09G3/3677 ,  G09G2310/0286 ,  G11C19/287 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1255 ,  H01L29/78648 ,  H01L29/7869

Abstract: A highly reliable semiconductor device is provided. A semiconductor device includes a shift register including a pulse output circuit formed using transistors having the same conductivity type, or the like. A transistor including a back gate is used as a transistor in which a potential difference between a source and a drain is not generated and positive stress is applied to a gate in a non-selection period of the pulse output circuit. In the non-selection period, stress applied to the transistors is reduced by interchanging the potentials of the gates and those of the back gates.

公开(公告)号：US09583516B2

公开(公告)日：2017-02-28

申请号：US14521793

申请日：2014-10-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/3265 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/7869

Abstract: A display device having a high aperture ratio and including a capacitor that can increase capacitance is provided. A pair of electrodes of the capacitor is formed using a light-transmitting conductive film. One of the electrodes of the capacitor is formed using a metal oxide film, and the other of the electrodes of the capacitor is formed using a light-transmitting conductive film. With such a structure, light can be emitted to the capacitor side when an organic insulating film is provided over the capacitor and a pixel electrode of a light-emitting element is formed over the organic insulating film. Thus, the capacitor can transmit light and can overlap the light-emitting element. Consequently, the aperture ratio and capacitance can be increased.

Abstract translation: 提供具有高开口率并且包括可以增加电容的电容器的显示装置。 电容器的一对电极使用透光导电膜形成。 电容器的一个电极使用金属氧化物膜形成，并且电容器的另一个电极使用透光导电膜形成。 通过这样的结构，当在电容器上设置有机绝缘膜时，可以将光发射到电容器侧，并且在有机绝缘膜上形成发光元件的像素电极。 因此，电容器可以透射光并且可以与发光元件重叠。 因此，可以增加开口率和电容。

公开(公告)号：US20170054034A1

公开(公告)日：2017-02-23

申请号：US15249570

申请日：2016-08-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Masashi Tsubuku ,  Kosei Noda

IPC: H01L29/786 ,  H02M3/158 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/78696 ,  H01L21/84 ,  H01L27/105 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  H02M3/073 ,  H02M3/158

Abstract: A transistor includes a gate, a source, and a drain, the gate is electrically connected to the source or the drain, a first signal is input to one of the source and the drain, and an oxide semiconductor layer whose carrier concentration is 5×1014/cm3 or less is used for a channel formation layer. A capacitor includes a first electrode and a second electrode, the first electrode is electrically connected to the other of the source and the drain of the transistor, and a second signal which is a clock signal is input to the second electrode. A voltage of the first signal is stepped up or down to obtain a third signal which is output as an output signal through the other of the source and the drain of the transistor.

Abstract translation: 晶体管包括栅极，源极和漏极，栅极电连接到源极或漏极，第一信号被输入到源极和漏极中的一个，以及载流子浓度为5× 1014 / cm3以下用于沟道形成层。 电容器包括第一电极和第二电极，第一电极电连接到晶体管的源极和漏极中的另一个，并且作为时钟信号的第二信号被输入到第二电极。 第一信号的电压被升高或降低以获得通过晶体管的源极和漏极中的另一个输出作为输出信号的第三信号。

公开(公告)号：US09553205B2

公开(公告)日：2017-01-24

申请号：US15147168

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki Miyake ,  Kouhei Toyotaka

IPC: G09G3/36 ,  G11C19/28 ,  H01L29/786 ,  H01L27/12

CPC classification number: G11C19/28 ,  G02F1/136277 ,  G09G3/3677 ,  G09G2310/0286 ,  G09G2310/0291 ,  G09G2310/0297 ,  H01L27/1225 ,  H01L29/7869

Abstract: To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with a narrow bezel. A transistor over a substrate; a first conductive film over a surface over which a gate electrode of the transistor is provided; a second conductive film over a surface over which a pair of electrodes of the transistor is provided; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film are included. The second conductive film overlaps the first conductive film with a gate insulating film of the transistor laid between the second conductive film and the first conductive film.

Abstract translation: 提供具有高孔径比的半导体器件，并且包括具有高电荷电容的电容器。 提供具有窄边框的半导体器件。 衬底上的晶体管; 在其上提供晶体管的栅电极的表面上的第一导电膜; 在其上提供晶体管的一对电极的表面上的第二导电膜; 并且包括与第一导电膜和第二导电膜电连接的第一透光性导电膜。 第二导电膜与第二导电膜和第一导电膜之间的晶体管的栅极绝缘膜与第一导电膜重叠。