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公开(公告)号：US10217501B2
公开(公告)日：2019-02-26
申请号：US15942258
申请日：2018-03-30
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
Abstract: According to some aspects, a layered structure comprises a memory layer exhibiting magnetization perpendicular to a face of the memory layer, the memory layer configured to change a direction of the magnetization in response to application of a current thereto, a magnetic layer exhibiting magnetization parallel or antiparallel to the direction of the magnetization of the memory layer and comprising a plurality of ferromagnetic layers, one or more non-magnetic layers, and an antiferromagnetic material, wherein a first non-magnetic layer of the one or more non-magnetic layers is situated between a first ferromagnetic layer of the plurality of ferromagnetic layers and a second ferromagnetic layer of the plurality of ferromagnetic layers, and wherein the antiferromagnetic material contacts at least one of the first non-magnetic layer and the first ferromagnetic layer, and an intermediate layer formed from a non-magnetic material located between the memory layer and the magnetic layer.
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公开(公告)号：US20190058114A1
公开(公告)日：2019-02-21
申请号：US16166761
申请日：2018-10-22
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida , Tetsuya Asayama
CPC classification number: H01L43/10 , G11C11/16 , G11C11/161 , H01L43/02 , H01L43/08
Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.
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公开(公告)号：US10199569B2
公开(公告)日：2019-02-05
申请号：US15458470
申请日：2017-03-14
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
Abstract: A magnetic element is provided. The magnetic element includes a free magnetization layer having a surface area that is approximately 1,600 nm2 or less, the free magnetization layer including a magnetization state that is configured to be changed; an insulation layer coupled to the free magnetization layer, the insulation layer including a non-magnetic material; and a magnetization fixing layer coupled to the insulation layer opposite the free magnetization layer, the magnetization fixing layer including a fixed magnetization so as to be capable of serving as a reference of the free magnetization layer.
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公开(公告)号：US10069062B2
公开(公告)日：2018-09-04
申请号：US15355327
申请日：2016-11-18
Applicant: Sony Corporation
Inventor： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
Abstract: A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).
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公开(公告)号：US20180226113A1
公开(公告)日：2018-08-09
申请号：US15942258
申请日：2018-03-30
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
CPC classification number: G11C11/161 , G11C11/15 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: According to some aspects, a layered structure comprises a memory layer exhibiting magnetization perpendicular to a face of the memory layer, the memory layer configured to change a direction of the magnetization in response to application of a current thereto, a magnetic layer exhibiting magnetization parallel or antiparallel to the direction of the magnetization of the memory layer and comprising a plurality of ferromagnetic layers, one or more non-magnetic layers, and an antiferromagnetic material, wherein a first non-magnetic layer of the one or more non-magnetic layers is situated between a first ferromagnetic layer of the plurality of ferromagnetic layers and a second ferromagnetic layer of the plurality of ferromagnetic layers, and wherein the antiferromagnetic material contacts at least one of the first non-magnetic layer and the first ferromagnetic layer, and an intermediate layer formed from a non-magnetic material located between the memory layer and the magnetic layer.
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Patent Agency Ranking
公开(公告)号：US09984735B2
公开(公告)日：2018-05-29
申请号：US14701401
申请日：2015-04-30
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
CPC classification number: G11C11/161 , G11C11/15 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: According to some aspects, a layered structure includes a memory layer, a magnetization-fixed layer, and a tunnel insulating layer. The memory layer has magnetization perpendicular to a film face in which a direction of the magnetization is configured to be changed according to information by applying a current in a lamination direction of the layered structure. The magnetization-fixed layer has magnetization parallel or antiparallel to the magnetization direction of the memory layer and comprises a laminated ferripinned structure including a plurality of ferromagnetic layers and one or more non-magnetic layers, and includes a layer comprising an antiferromagnetic material formed on a first ferromagnetic layer of the plurality of ferromagnetic layers and situated between the first ferromagnetic layer and the non-magnetic layer. The tunnel insulating layer is located between the memory layer and the magnetization-fixed layer.
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公开(公告)号：US09608196B2
公开(公告)日：2017-03-28
申请号：US15049418
申请日：2016-02-22
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Tetsuya Asayama , Hiroyuki Uchida
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01F10/3286 , H01F10/329 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/10
Abstract: Provided is an information storage element comprising a first layer, an insulation layer coupled to the first layer, and a second layer coupled to the insulation layer opposite the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material. The insulation layer includes a non-magnetic material. The second layer includes a fixed magnetization. In an embodiment, the first layer has a transverse length that is approximately 45 nm or less and a volume that is approximately 2,390 nm3 or less. In a further embodiment, the second layer includes MgO and is capable of allowing electrons passing through the second layer reach the first layer before the electrons enter a non-polarized state.
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公开(公告)号：US09530958B2
公开(公告)日：2016-12-27
申请号：US14607487
申请日：2015-01-28
Applicant: Sony Corporation
Inventor： Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
CPC classification number: H01L43/02 , H01L27/228 , H01L43/08 , H01L43/10
Abstract: A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).
Abstract translation: 磁阻元件包括层叠结构，其包括多个固定层，由非磁性材料形成的中间层和记录层，所述多个固定层经由非磁性层层叠，所述多个固定层具有 至少第一固定层和第二固定层，满足以下公式：S1> S2（其中S1是与中间层相邻的第一固定层的面向中间层的部分的面积，S2是 固定层的除了第一固定层之外的固定层中具有最小面积的区域）。
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公开(公告)号：US09515254B2
公开(公告)日：2016-12-06
申请号：US15086568
申请日：2016-03-31
Applicant: Sony Corporation
Inventor： Kazutaka Yamane , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Hiroyuki Uchida
CPC classification number: H01L43/10 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/32 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L27/228 , H01L43/08
Abstract: A storage element is provided. The storage element includes a memory layer having a first magnetization state of a first material; a fixed magnetization layer having a second magnetization state of a second material; an intermediate layer including a nonmagnetic material and provided between the memory layer and the fixed magnetization layer; wherein the first material includes Co—Fe—B alloy, and at least one of a non-magnetic metal and an oxide.
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公开(公告)号：US20160203862A1
公开(公告)日：2016-07-14
申请号：US15074460
申请日：2016-03-18
Applicant: Sony Corporation
Inventor： Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Kazutaka Yamane , Hiroyuki Uchida
IPC: G11C13/00
CPC classification number: G11C13/003 , G11C11/1657 , G11C11/1659 , G11C11/1675 , G11C11/1693 , G11C13/0002 , G11C13/0069 , G11C2213/74 , G11C2213/79
Abstract: A memory device includes a plurality of bit lines extending in a first direction, a plurality of word lines extending in a second direction crossing the first direction, and a plurality of memory cells. Each memory cell includes a memory element and two select transistors disposed along the first direction and the memory element being configured to store information based on changes in resistance. A first and a second column are formed by repeatedly arranging a first group and a second group of the memory cells, respectively, along the first direction, and the second column is disposed adjacent to the first column and the first group is displaced in the first direction such that, in the second direction, a first select transistor in respective memory cells in the first column is aligned with a second select transistor in respective memory cells in the second column.
Abstract translation: 存储器件包括沿第一方向延伸的多个位线，沿与第一方向交叉的第二方向延伸的多个字线以及多个存储单元。 每个存储单元包括存储元件和沿着第一方向设置的两个选择晶体管，并且存储元件被配置为基于电阻变化存储信息。 第一和第二列分别通过沿着第一方向重复布置第一组和第二组存储单元而形成，第二列与第一列相邻设置，第一组在第一组中移位 方向使得在第二方向上，第一列中的各个存储单元中的第一选择晶体管与第二列的各个存储单元中的第二选择晶体管对准。
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