公开(公告)号：US09577209B2

公开(公告)日：2017-02-21

申请号：US13367833

申请日：2012-02-07

申请人： Yoshifumi Tanada ,  Naoya Sakamoto ,  Hiroki Adachi ,  Shingo Eguchi ,  Koji Ono ,  Kensuke Yoshizumi ,  Hiroto Shinoda

发明人： Yoshifumi Tanada ,  Naoya Sakamoto ,  Hiroki Adachi ,  Shingo Eguchi ,  Koji Ono ,  Kensuke Yoshizumi ,  Hiroto Shinoda

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L27/32

CPC分类号： H01L51/5212 ,  H01L27/3279 ,  H01L51/5228 ,  H01L2251/5361

摘要： The present invention focuses on a structure in which an auxiliary wiring for increasing the conductivity of an upper electrode is provided on the substrate side. The conductive auxiliary wiring of a light-emitting device is provided over a substrate, and an upper portion of the auxiliary wiring protrudes in a direction parallel to the substrate. Further, an EL layer formed in a region including a lower electrode layer and the auxiliary wiring is physically divided by the auxiliary wiring. An upper electrode layer formed in a manner similar to that of the lower electrode layer may be electrically connected to at least part of a side surface of the auxiliary wiring. Such an auxiliary wiring may be used in a lighting device and a display device.

摘要翻译： 本发明的重点是在基板侧设置用于提高上部电极的导电性的辅助布线的结构。 发光装置的导电性辅助布线设置在基板上，辅助配线的上部沿与基板平行的方向突出。 此外，在包括下电极层和辅助布线的区域中形成的EL层在物理上被辅助布线分开。 以类似于下电极层的方式形成的上电极层可以电连接到辅助布线的侧表面的至少一部分。 这种辅助布线可以用在照明装置和显示装置中。

公开(公告)号：US09108294B2

公开(公告)日：2015-08-18

申请号：US13319533

申请日：2010-06-14

申请人： Tsuyoshi Yagi ,  Koji Ono

发明人： Tsuyoshi Yagi ,  Koji Ono

IPC分类号： B24B53/02 ,  B24B53/053

CPC分类号： B24B53/053

摘要： A grinding device includes a dresser head (7) at the front end of a spindle (1), and a dresser tool (8) mounted on the dresser head (7) for dressing the grinder (6). The dresser tool (8) is configured such that while the workpiece (W) is being ground by the grinder (6), the dresser tool (8) is out of contact with the grinder (6), and while the grinder (6) is being dressed by the dresser tool (8), the chuck (3) is out of contact with the grinder (6). Thus it is possible to press the dresser tool (8) against the grinder (6) using relative movement between the spindle (1) and the grinder shaft (4). The dresser head (7) can be rotated by rotating the spindle (1). The grinder (6) can thus be dressed without the need to mount the dresser tool (8) every time the grinder is to be dressed.

摘要翻译： 研磨装置包括在主轴（1）的前端处的修整器头（7）和安装在修整器头部（7）上用于修整研磨机（6）的修整器工具（8）。 修整器工具（8）构造成使得当工件（W）被研磨机（6）磨削时，修整器工具（8）与研磨机（6）脱离接触，并且当研磨机（6） 正在被修整工具（8）穿着，卡盘（3）与研磨机（6）脱离接触。 因此，可以使用主轴（1）和研磨轴（4）之间的相对运动将修整器工具（8）压靠研磨机（6）。 梳妆台头（7）可以通过旋转主轴（1）旋转。 因此，磨削机（6）可以在每次研磨机要被打磨的同时不需要安装修整器工具（8）。

公开(公告)号：US08791513B2

公开(公告)日：2014-07-29

申请号：US13465398

申请日：2012-05-07

申请人： Koji Ono ,  Hideomi Suzawa

发明人： Koji Ono ,  Hideomi Suzawa

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/1214 ,  C23F4/00 ,  H01B1/02 ,  H01B5/14 ,  H01B13/0006 ,  H01B13/0036 ,  H01L21/32136 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/124 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/495 ,  H01L2924/0002 ,  H01L2924/00

摘要： A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

摘要翻译： 提供适合于大尺寸基板的金属布线。 本发明的特征在于，在绝缘表面上形成至少一层导电膜，在导电膜上形成抗蚀剂图案，并且蚀刻具有抗蚀剂图案的导电膜以形成金属布线，同时控制其锥度 根据偏置功率密度，ICP功率密度，下部电极的温度，压力，蚀刻气体的总流量，或蚀刻气体中的氧气或氯气的比例来确定角度α。 这样形成的金属布线的宽度或长度波动较小，并且可以令人满意地处理基板尺寸的增加。

公开(公告)号：US20130321244A1

公开(公告)日：2013-12-05

申请号：US13984151

申请日：2012-02-07

申请人： Koji Ono

发明人： Koji Ono

IPC分类号： G06F3/14

CPC分类号： G06F3/1446 ,  G06F3/1431 ,  G09F9/301 ,  G09G2300/026 ,  G09G2340/0464 ,  G09G2340/0492 ,  G09G2380/14

摘要： A portable terminal has a first display and a second display, and is transformable between a first form and a second form. The first form is formed by arranging the first display and the second display to form a combined display, and the second form is formed by overlaying the second display upon the first display. In the first form displaying is performed on the combined display and in the second form displaying is performed on only the second display. The portable terminal detects a tilt of the portable terminal at a primary surface of the second display. When the portable terminal is in the first form, the tilt that is detected is corrected and displaying is performed based on the corrected tilt. When the portable terminal is in the second form, displaying is performed based on the detected tilt.

摘要翻译： 便携式终端具有第一显示器和第二显示器，并且可在第一形式和第二形式之间变换。 第一形式通过布置第一显示器和第二显示器以形成组合显示器而形成，并且第二形式通过在第一显示器上叠加第二显示器而形成。 在第一形式中，在组合显示器上执行显示，而在第二形式中，仅在第二显示器上执行显示。 便携式终端检测便携式终端在第二显示器的主表面处的倾斜。 当便携式终端处于第一形式时，校正检测到的倾斜，并且基于校正的倾斜来执行显示。 当便携式终端处于第二种形式时，基于检测到的倾斜来执行显示。

公开(公告)号：US08580155B2

公开(公告)日：2013-11-12

申请号：US13060849

申请日：2008-09-03

申请人： Koji Ono ,  Atsushi Honda ,  Tadashi Matsushita ,  Mitsumasa Saito

发明人： Koji Ono ,  Atsushi Honda ,  Tadashi Matsushita ,  Mitsumasa Saito

IPC分类号： H01B1/04 ,  H01B1/06 ,  H01M4/13

CPC分类号： H01M10/052 ,  H01M4/0416 ,  H01M4/0471 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/62 ,  H01M4/621 ,  H01M4/625

摘要： Disclosed is a method for producing an electrode material which has high discharge capacity at high charge/discharge rate and enables to realize sufficient charge/discharge rate performance. Also disclosed are an electrode material, an electrode and a lithium ion battery. Specifically disclosed is a method for producing an electrode material, which is characterized in that a slurry containing an electrode active material or a precursor of the electrode active material, and organic compounds each selected from at least two groups among the group A, group B and group C is sprayed and dried for forming a granule, and the thus-formed granule is fired at a temperature not less than 500° C. but not more than 1000° C. in a non-oxidizing atmosphere.

摘要翻译： 公开了一种在高充电/放电速率下具有高放电容量的电极材料的制造方法，能够实现充分/充放电率的充分性能。 还公开了电极材料，电极和锂离子电池。 具体公开了一种电极材料的制造方法，其特征在于，含有电极活性物质或电极活性物质前体的浆料，以及分别选自A组，B组和 将组C喷雾干燥以形成颗粒，将这样形成的颗粒在非氧化性气氛中在不低于500℃但不超过1000℃的温度下焙烧。

公开(公告)号：US08569767B2

公开(公告)日：2013-10-29

申请号：US13185989

申请日：2011-07-19

申请人： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

发明人： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

IPC分类号： H01L27/14

CPC分类号： H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

公开(公告)号：US08207536B2

公开(公告)日：2012-06-26

申请号：US13104140

申请日：2011-05-10

申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

IPC分类号： H01L31/00

CPC分类号： H01L27/1296 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

摘要翻译： 为了形成栅电极，层叠具有低电阻的包含Al或以Al为主要成分的材料的导电膜和用于防止Al扩散到半导体层中的具有低接触电阻的导电膜，并且栅电极由 使用能够高速进行蚀刻处理的装置。

公开(公告)号：US08120039B2

公开(公告)日：2012-02-21

申请号：US12501801

申请日：2009-07-13

申请人： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

发明人： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

IPC分类号： H01L27/14

CPC分类号： H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semiconductor layer, and a gate electrode having a tapered portion on the insulating film, in the semiconductor device, the semiconductor layer has a channel forming region, a first impurity region for forming a source region or a drain region and containing a single conductivity type impurity element, and a second impurity region for forming an LDD region contacting the channel forming region, a portion of the second impurity region is formed overlapping a gate electrode, and the concentration of the single conductivity type impurity element contained in the second impurity region becomes larger with distance from the channel forming region.

摘要翻译： 在半导体器件（通常为有源矩阵显示器件）中，根据电路的功能，布置在各个电路中的TFT的结构是合适的，并且随着半导体器件的工作特性和可靠性的提高，制造 降低成本，并通过减少工艺步骤的数量来提高产量。 半导体器件具有半导体层，与半导体层接触形成的绝缘膜和在绝缘膜上具有锥形部分的栅电极，在半导体器件中，半导体层具有沟道形成区，形成第一杂质区 源极区域或漏极区域，并且包含单一导电型杂质元素，以及用于形成与沟道形成区域接触的LDD区域的第二杂质区域，第二杂质区域的一部分与栅电极重叠，并且浓度 包含在第二杂质区域中的单一导电型杂质元素随着与沟道形成区域的距离而变大。

公开(公告)号：US08050677B2

公开(公告)日：2011-11-01

申请号：US11822893

申请日：2007-07-11

申请人： Koji Ono

发明人： Koji Ono

IPC分类号： H04W36/00

CPC分类号： H04W76/22 ,  H04W36/08

摘要： Disclosed is a mobile communication terminal including: a user information storage unit for storing user information having a terminal identifier for identifying an arbitrary communication terminal, and a user identifier for identifying the user of the communication terminal associated with each other; an identifier storage unit for storing, at the time of beginning of a call with the other party of the call, a first identifier for identifying the communication terminal of the other party of the call; a terminal identifier determination unit for determining whether the first terminal identifier and a second terminal identifier are associated with the same user identifier, with reference to the user information, upon receipt of a call-out signal including the second terminal identifier during the call with the communication terminal of the other party; and a call controller for handing over the call to a communication terminal indicated by the second terminal identifier when the terminal identifier determination unit determines that the first and second terminal identifiers are associated with the same user identifier.

摘要翻译： 公开了一种移动通信终端，包括：用户信息存储单元，用于存储具有用于识别任意通信终端的终端标识符的用户信息和用于识别彼此相关联的通信终端的用户的用户标识符; 标识符存储单元，用于在与呼叫的另一方的呼叫开始时存储用于识别呼叫的另一方的通信终端的第一标识符; 终端标识符确定单元，用于参考用户信息确定第一终端标识符和第二终端标识符是否与相同的用户标识符相关联，在接收到呼叫期间包括第二终端标识符的呼叫信号时， 对方通信终端; 以及呼叫控制器，当所述终端标识符确定单元确定所述第一和第二终端标识符与相同的用户标识符相关联时，将所述呼叫切换到由所述第二终端标识符指示的通信终端。

公开(公告)号：US20110210336A1

公开(公告)日：2011-09-01

申请号：US13104140

申请日：2011-05-10

申请人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

发明人： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

IPC分类号： H01L29/786

CPC分类号： H01L27/1296 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

摘要： For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.