公开(公告)号：US20120264300A1

公开(公告)日：2012-10-18

申请号：US13086366

申请日：2011-04-13

申请人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： H01L21/306

CPC分类号： H01L21/3212 ,  H01L21/7684 ,  H01L21/76898

摘要： A method of fabricating the semiconductor component including following steps is provided. A substrate is provided, wherein an opening is already formed in the substrate. A material layer is formed on the substrate, wherein the material layer fills up the opening, and the material layer outside and above the opening has a recess therein. A sacrifice layer is formed on a surface of the recess. A chemical mechanical polishing (CMP) process is performed to remove the sacrifice layer and the material layer outside the opening, wherein a polishing rate of the CMP process on the material layer is greater than that of the CMP process on the sacrifice layer.

摘要翻译： 提供一种制造半导体元件的方法，包括以下步骤。 提供了一种基板，其中已经在基板中形成了开口。 在基板上形成材料层，其中材料层填充开口，并且开口外部和上方的材料层在其中具有凹部。 牺牲层形成在凹部的表面上。 进行化学机械抛光（CMP）工艺以去除开口外部的牺牲层和材料层，其中在牺牲层上CMP材料层上的CMP工艺的抛光速率大于抛光速率。

公开(公告)号：US20120264299A1

公开(公告)日：2012-10-18

申请号：US13085487

申请日：2011-04-13

申请人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Chien-Mao Liao ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： H01L21/306

CPC分类号： H01L21/3212 ,  H01L21/31053

摘要： A chemical mechanical polishing (CMP) method is provided The method is capable of polishing a substrate in a CMP apparatus by using a hydrophobic polishing pad and includes following steps. A first CMP process is performed to the substrate. A first cleaning process is performed to the hydrophobic polishing pad. A second CMP process is performed to the substrate, wherein the first CMP process, the first cleaning process and the second CMP process are performed in sequence.

摘要翻译： 提供了化学机械抛光（CMP）方法。该方法能够通过使用疏水性抛光垫在CMP设备中抛光衬底，并且包括以下步骤。 对基板进行第一CMP处理。 对疏水性抛光垫进行第一清洗处理。 对基板执行第二CMP处理，其中依次执行第一CMP处理，第一清洗处理和第二CMP处理。

公开(公告)号：US08288279B1

公开(公告)日：2012-10-16

申请号：US13162537

申请日：2011-06-16

申请人： Jar-Ming Ho ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Jar-Ming Ho ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： H01L21/44 ,  H01L21/336

CPC分类号： H01L27/10888 ,  H01L21/76838 ,  H01L21/76895 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10894 ,  H01L29/66628 ,  H01L29/7834

摘要： A method for fabricating a conductive contact is provided, including: providing a semiconductor substrate with a gate structure and a pair of first conductive regions in a first region, and a pair of second conductive regions and an isolation element in the second region, and a first dielectric layer and a second dielectric layer thereon; forming a third dielectric layer and a fourth dielectric layer over the semiconductor substrate in the first region; forming a pattern mask layer with a first opening over the second dielectric layer in the second region; performing an etching process to the third and fourth dielectric layers in the first region and a portion of the first and second dielectric layers in the second region exposed by the first opening; removing the patterned mask layer; forming a first conductive semiconductor layer over the first conductive regions and a second conductive semiconductor layer over the isolation element and portions of the top surface of the second conductive regions; forming a fifth dielectric layer over the semiconductor substrate; forming a third opening in the fifth dielectric layer in the second region; and forming a conductive layer in the third opening.

摘要翻译： 提供了一种用于制造导电触点的方法，包括：在第一区域中提供具有栅极结构和一对第一导电区域的半导体衬底以及第二区域中的一对第二导电区域和隔离元件，以及 第一电介质层和第二电介质层; 在所述第一区域中在所述半导体衬底上形成第三电介质层和第四电介质层; 在所述第二区域中形成具有在所述第二介电层上的第一开口的图案掩模层; 对所述第一区域中的所述第三和第四介电层进行蚀刻处理，以及在由所述第一开口暴露的所述第二区域中的所述第一和第二介电层的一部分; 去除图案化掩模层; 在所述第一导电区域上形成第一导电半导体层，以及在所述隔离元件上方的第二导电半导体层和所述第二导电区域的顶表面的部分; 在所述半导体衬底上形成第五电介质层; 在所述第二区域中在所述第五电介质层中形成第三开口; 以及在所述第三开口中形成导电层。

公开(公告)号：US20120256256A1

公开(公告)日：2012-10-11

申请号：US13081499

申请日：2011-04-07

申请人： Tieh-Chiang Wu ,  Yi-Nan Chen ,  Hsien-Wen Liu

发明人： Tieh-Chiang Wu ,  Yi-Nan Chen ,  Hsien-Wen Liu

IPC分类号： H01L29/772

CPC分类号： H01L27/10879 ,  H01L27/10826 ,  H01L29/4236 ,  H01L29/785

摘要： A recessed gate transistor with cylindrical fins is disclosed. The recessed gate transistor is disposed in an active region of a semiconductor substrate. Two isolation regions disposed in the semiconductor substrate to define an active region therebetween. The recessed gate transistor includes a gate structure, a source doping region and a drain doping region. The gate structure has at least three fins forms a concave and convex bottom of the gate structure. The front fin is disposed in one of the two isolation regions, the middle fin is disposed in the active region and a last fin disposed in the other one of the two isolation regions. The front fin and the last fin are both cylindrical. A lower part of the gate structure is M-shaped when view from the source doping region to the drain doping region direction.

摘要翻译： 公开了一种具有圆柱形翅片的嵌入式栅极晶体管。 凹陷栅极晶体管设置在半导体衬底的有源区中。 设置在半导体衬底中以限定它们之间的有源区的两个隔离区。 凹陷栅晶体管包括栅极结构，源极掺杂区和漏极掺杂区。 栅极结构具有至少三个鳍形成栅极结构的凹凸底部。 前鳍设置在两个隔离区域之一中，中间翅片设置在有源区域中，最后一个翅片设置在两个隔离区域中的另一个中。 前鳍和最后的鳍都是圆柱形的。 当从源极掺杂区域到漏极掺杂区域方向观察时，栅极结构的下部是M形的。

公开(公告)号：US06867089B2

公开(公告)日：2005-03-15

申请号：US10254786

申请日：2002-09-24

申请人： Yi-Nan Chen ,  Tung-Wang Huang ,  Hsin-Jung Ho ,  Hsien-Wen Liu

发明人： Yi-Nan Chen ,  Tung-Wang Huang ,  Hsin-Jung Ho ,  Hsien-Wen Liu

IPC分类号： H01L21/02 ,  H01L21/8242

CPC分类号： H01L27/1087 ,  H01L28/84

摘要： A method of forming a bottle-shaped trench for capacitor in a semiconductor substrate. First, the semiconductor substrate is selectively etched to form a trench, wherein the trench has a top portion and a bottom portion. Then, an oxide film is formed on the top portion of the trench. Next, a rugged polysilicon layer is formed on the bottom portion and the top portion of the trench. The rugged polysilicon layer and the semiconductor substrate are etched through the bottom portion of the trench by diluted ammonia solution as the etchant to form a bottle-shaped trench having a rugged surface. Next, the oxide film is removed.

摘要翻译： 一种在半导体衬底中形成用于电容器的瓶形沟槽的方法。 首先，选择性地蚀刻半导体衬底以形成沟槽，其中沟槽具有顶部和底部。 然后，在沟槽的顶部形成氧化膜。 接下来，在沟槽的底部和顶部上形成凹凸多晶硅层。 凹凸多晶硅层和半导体衬底通过稀释的氨溶液作为蚀刻剂蚀刻通过沟槽的底部，以形成具有粗糙表面的瓶形沟槽。 接下来，去除氧化膜。

公开(公告)号：US08807429B2

公开(公告)日：2014-08-19

申请号：US13525310

申请日：2012-06-16

申请人： Hsien-Wen Liu

发明人： Hsien-Wen Liu

IPC分类号： G06Q90/00

CPC分类号： G06K19/07786 ,  H01Q1/2216 ,  H04B5/0062 ,  H04B7/10

摘要： A recognition system is offered. The recognition system is for sensing a plurality of units under test of at least an object under test. The recognition system comprises a periodic guided-wave structure and a near field sensing device. The periodic guided-wave structure is disposed under the object under test and has a plurality of conductive units periodically arranged on a plane. The near field sensing device has a near field antenna and senses the plurality of units under test through detecting the near field magnetic field. The periodic guided-wave structure confines the electromagnetic field for facilitating to determine the distance from any one of the units under test to the periodic guided-wave structure.

摘要翻译： 提供识别系统。 识别系统用于感测至少被测物体被测试的多个单元。 识别系统包括周期性导波结构和近场感测装置。 周期性导波结构设置在被测物体的下方，并且具有周期性地布置在平面上的多个导电单元。 近场感测装置具有近场天线，并且通过检测近场磁场来感测被测试的多个单元。 周期导波结构限制电磁场，以便于确定从被测单元中的任一个到周期性导波结构的距离。

公开(公告)号：US08710941B2

公开(公告)日：2014-04-29

申请号：US13020444

申请日：2011-02-03

申请人： Chien-Chih Lee ,  Wei-Chin Hsu ,  Hsien-Wen Liu

发明人： Chien-Chih Lee ,  Wei-Chin Hsu ,  Hsien-Wen Liu

IPC分类号： H01P1/205 ,  H01P7/04

CPC分类号： H01P1/205 ,  H01P1/2053 ,  H01P7/04

摘要： A high-order harmonic device of a cavity filter including a base and a lid cover the base is disclosed. The base has a through groove connecting to an upper and a lower portion. The base has a plurality of output terminal with metallic conductor extending into the inner side formed on the surface of the sidewall. The base has resonance space formed indented to receive the metallic conductor and extending to connect to the through groove. The lid has a plurality of threading holes formed corresponding to chambers and partitions received with adjusting elements for height adjustment. The adjusting elements has the resonance bars corresponding to every chamber and the suppressing bars corresponding to every partition. By adjusting suppressing bar and the partition to a predetermined distance, the space of the channel for transmitting the high-order harmonic wave can be reduced to suppress noise produced by high-order harmonic wave.

摘要翻译： 公开了一种包括基座和盖子覆盖基座的空腔滤波器的高次谐波装置。 基部具有连接到上部和下部的通孔。 基座具有多个输出端子，金属导体延伸到形成在侧壁表面上的内侧。 底座具有形成为凹入的谐振空间，用于容纳金属导体并延伸以连接到通孔。 所述盖具有多个对应于室和隔板形成的穿孔，所述隔间和隔板被接纳有用于高度调节的调节元件。 调节元件具有对应于每个室的共振杆和对应于每个分区的抑制棒。 通过将抑制棒和隔板调节到预定距离，可以减少用于发送高次谐波的通道的空间，以抑制由高次谐波产生的噪声。

公开(公告)号：US08431933B2

公开(公告)日：2013-04-30

申请号：US12874232

申请日：2010-09-02

申请人： Tzung-Han Lee ,  Chung-Lin Huang ,  Hsien-Wen Liu

发明人： Tzung-Han Lee ,  Chung-Lin Huang ,  Hsien-Wen Liu

IPC分类号： H01L29/10

CPC分类号： H01L29/4983 ,  H01L27/0207 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/10882 ,  H01L29/4236

摘要： A memory layout structure is disclosed, in which, a lengthwise direction of each active area and each row of active areas form an included angle not equal to zero and not equal to 90 degrees, bit lines and word lines cross over each other above the active areas, the bit lines are each disposed above a row of active areas, bit line contact plugs or node contact plugs may be each disposed entirely on an source/drain region, or partially on the source/drain region and partially extend downward along a sidewall (edge wall) of the substrate of the active area to carry out a sidewall contact. Self-aligned node contact plugs are each disposed between two adjacent bit lines and between two adjacent word lines.

摘要翻译： 公开了一种存储器布局结构，其中每个有效区域和每行有效区域的长度方向形成不等于零且不等于90度的夹角，位线和字线在有效区域之上彼此交叉 位线各自设置在有效区域的一行之上，位线接触插塞或节点接触插塞可以各自完全设置在源极/漏极区域上，或者部分地设置在源极/漏极区域上，并且部分地沿着侧壁向下延伸 （边缘壁），以执行侧壁接触。 自对准节点接触插头各自设置在两个相邻位线之间和两个相邻字线之间。

公开(公告)号：US20070114859A1

公开(公告)日：2007-05-24

申请号：US11482067

申请日：2006-07-07

申请人： Chien-Jung Chen ,  Hsien-Wen Liu ,  Hui-Chao Hsu

发明人： Chien-Jung Chen ,  Hsien-Wen Liu ,  Hui-Chao Hsu

IPC分类号： H02K9/06 ,  H02K11/00 ,  H02P7/06

CPC分类号： H02K7/14 ,  F04D25/0606

摘要： A cooling fan includes: a casing having a base wall and a surrounding wall that extends transversely from the base wall, and that has an inner wall surface and a top opening; a stator mounted on the inner wall surface of the surrounding wall; a shaft protruding from the base wall; a fan blade unit including an annular hub that is journalled rotatably to the shaft, a supporting ring that surrounds the hub, and a plurality of blades that extend between and that are connected to the hub and the supporting ring; a rotor mounted on the supporting ring; and a cover in the form of a circuit board mounted on the top end face of the surrounding wall for covering the top opening in the casing and including a substrate formed with a central opening.

摘要翻译： 冷却风扇包括：壳体，其具有基壁和从基壁横向延伸的周壁，并且具有内壁表面和顶开口; 安装在周围壁的内壁表面上的定子; 从底壁突出的轴; 风扇叶片单元，其包括可旋转地安装在所述轴上的环形轮毂，围绕所述轮毂的支撑环，以及在所述轮毂和所述支撑环之间延伸并且连接到所述轮毂和所述支撑环的多个叶片; 安装在所述支撑环上的转子; 以及安装在周围壁的顶端面上的电路板形式的盖，用于覆盖壳体中的顶部开口，并且包括形成有中心开口的基板。

公开(公告)号：US20140210319A1

公开(公告)日：2014-07-31

申请号：US13750269

申请日：2013-01-25

申请人： Chien-Jung Chen ,  Hsien-Wen Liu ,  Chih-Tsung HSU ,  Tzu-Wen Tsai

发明人： Chien-Jung Chen ,  Hsien-Wen Liu ,  Chih-Tsung HSU ,  Tzu-Wen Tsai

IPC分类号： H02K11/00

CPC分类号： H02K11/0068 ,  H02K11/215

摘要： A motor includes a base, a rotor unit and a driving unit. The base has opposite first and second surfaces. The rotor unit includes a magnet unit disposed on a rotatable magnet carrier to face the first surface of the base. The driving unit includes induction coils disposed on a circuit board, a sensor unit that is disposed on the circuit board and spaced apart from the induction coils and that defines a first reference line with the rotation axis, and a rotor positioning component disposed on the second surface of the base, extending along a second reference line, and capable of magnet attraction with the magnet unit for positioning the rotor unit relative to the sensor unit when the rotor unit stops rotating.

摘要翻译： 电动机包括基座，转子单元和驱动单元。 底座具有相对的第一和第二表面。 转子单元包括设置在可旋转的磁体载体上以面向基座的第一表面的磁体单元。 驱动单元包括设置在电路板上的感应线圈，设置在电路板上并与感应线圈隔开并且限定具有旋转轴的第一参考线的传感器单元，以及设置在第二 所述基座的表面沿着第二参考线延伸，并且当所述转子单元停止旋转时，能够与所述磁体单元磁吸引，用于相对于所述传感器单元相对于所述传感器单元定位所述转子单元。