Conforming template for patterning liquids disposed on substrates
    115.
    发明授权
    Conforming template for patterning liquids disposed on substrates 有权
    符合设置在基板上的图案化液体的模板

    公开(公告)号:US08123514B2

    公开(公告)日:2012-02-28

    申请号:US12717664

    申请日:2010-03-04

    IPC分类号: B29C59/02

    摘要: The present invention includes a template for patterning liquids disposed on a substrate. The template includes a body having opposed first and second surfaces with one surface having at least one recess and the other surface having a patterning region. In one embodiment, the template may be mounted to a fluid chamber having an inlet and a throughway. The template may be connected to the throughway and the inlet is connected to a fluid source.

    摘要翻译: 本发明包括用于图案化液体的模板,该模板设置在基板上。 模板包括具有相对的第一和第二表面的主体,一个表面具有至少一个凹部,另一个表面具有图案化区域。 在一个实施例中,模板可以安装到具有入口和通道的流体室。 模板可以连接到通道,并且入口连接到流体源。

    ENHANCED DENSIFICATION OF SILICON OXIDE LAYERS
    116.
    发明申请
    ENHANCED DENSIFICATION OF SILICON OXIDE LAYERS 有权
    氧化硅层的增强渗透

    公开(公告)号:US20120009413A1

    公开(公告)日:2012-01-12

    申请号:US13178057

    申请日:2011-07-07

    摘要: Densifying a multi-layer substrate includes providing a substrate with a first dielectric layer on a surface of the substrate. The first dielectric layer includes a multiplicity of pores. Water is introduced into the pores of the first dielectric layer to form a water-containing dielectric layer. A second dielectric layer is provided on the surface of the water-containing first dielectric layer. The first and second dielectric layers are annealed at temperature of 600° C. or less. In an example, the multi-layer substrate is a nanoimprint lithography template. The second dielectric layer may have a density and therefore an etch rate similar to that of thermal oxide, yet may still be porous enough to allow more rapid diffusion of helium than a thermal oxide layer.

    摘要翻译: 致密化多层基板包括在基板的表面上提供具有第一介电层的基板。 第一介电层包括多个孔。 将水引入第一介电层的孔中以形成含水介电层。 在含水的第一介电层的表面上设置有第二介质层。 第一和第二电介质层在600℃或更低的温度下退火。 在一个实例中,多层衬底是纳米压印光刻模板。 第二电介质层可以具有与热氧化物类似的密度,因此蚀刻速率可能仍然足够多孔以允许氦比热氧化物层更快速地扩散。

    Forming a layer on a substrate
    117.
    发明授权
    Forming a layer on a substrate 有权
    在基材上形成一层

    公开(公告)号:US08066930B2

    公开(公告)日:2011-11-29

    申请号:US12749552

    申请日:2010-03-30

    IPC分类号: B29C41/12 B81C1/00

    摘要: The present invention is directed to a method of forming an imprinting layer on a substrate including high resolution features, and transferring the features into a solidified region of the substrate. Desired thickness of the residual layer may be minimized in addition to visco-elastic behavior of the material.

    摘要翻译: 本发明涉及一种在包括高分辨率特征的基板上形成压印层的方法,并将特征转移到基板的固化区域中。 除了材料的粘弹性行为之外,残留层的期望厚度可以最小化。

    Chucking system comprising an array of fluid chambers
    119.
    发明授权
    Chucking system comprising an array of fluid chambers 有权
    包括流体室阵列的卡盘系统

    公开(公告)号:US08033813B2

    公开(公告)日:2011-10-11

    申请号:US12616349

    申请日:2009-11-11

    IPC分类号: B29C59/00 G03B27/62

    摘要: The present invention is directed towards a chucking system to hold a substrate, said system including, inter alia, a chuck body having first and second opposed sides, said first side including an array of fluid chambers arranged in rows and columns, said fluid chambers each comprising first and second spaced-apart recesses defining first and second spaced-apart support regions, with said first support region cincturing said second support region and said first and second recesses, and said second support region cincturing said second recess, with said substrate resting against said first and second support regions, with said first recess and a portion of said substrate in superimposition therewith defining a first chamber and said second recess and a portion of said substrate in superimposition therewith defining a second chamber, with each column of said first chambers and each row of said second chambers being in fluid communication with a differing source of fluid to control a flow of fluid in said array of fluid chambers.

    摘要翻译: 本发明涉及一种用于夹持基板的夹紧系统,所述系统尤其包括具有第一和第二相对侧面的卡盘体,所述第一侧包括排列成行和列的流体室阵列,所述流体室各自 包括限定第一和第二间隔开的支撑区域的第一和第二间隔开的凹部,其中所述第一支撑区域使所述第二支撑区域和所述第一和第二凹部相互影响,并且所述第二支撑区域使所述第二凹部相互嵌合, 所述第一和第二支撑区域与所述第一凹部和所述基板的一部分重叠地限定第一腔室和所述第二凹部以及与所述基底的一部分重叠形成第二腔室,所述第一腔室的每一列和 每排所述第二室与不同的流体源流体连通以控制流动 在所述流体室阵列中的流体。

    Process Gas Confinement for Nano-Imprinting
    120.
    发明申请
    Process Gas Confinement for Nano-Imprinting 审中-公开
    纳米压印过程气体限制

    公开(公告)号:US20110193251A1

    公开(公告)日:2011-08-11

    申请号:US13023246

    申请日:2011-02-08

    IPC分类号: B28B17/00

    摘要: Gas confinement systems and methods are described. In particular, systems and methods are described that include a barrier that confines purging gas and restricts flow of purging gas to other elements within a nano-lithography system. The barrier can be adjusted to accommodate and/or control desired pressure variations between working and external environments.

    摘要翻译: 描述了气体限制系统和方法。 特别地,描述了包括限制清洗气体并限制净化气体流到纳米光刻系统内的其它元件的屏障的系统和方法。 可以调节阻挡层以适应和/或控制工作和外部环境之间所需的压力变化。