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    Method of producing ultra-hard abrasive particles
    114.
    发明授权
    Method of producing ultra-hard abrasive particles 失效
    生产超硬磨粒的方法

    公开(公告)号：US06979357B2

    公开(公告)日：2005-12-27

    申请号：US10415345

    申请日：2001-11-06

    Applicant: Robert Fries ,  Iakovos Sigalas ,  Manfred Nebelung ,  Geoffrey John Davies

    Inventor： Robert Fries ,  Iakovos Sigalas ,  Manfred Nebelung ,  Geoffrey John Davies

    IPC: B01J3/00 ,  B01J3/06 ,  C01B31/06 ,  C09K3/14 ,  B05D7/00 ,  B24D18/00

    CPC classification number: C09K3/1436 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  C01B32/25

    Abstract: A method of producing a plurality of discrete ultra-hard abrasive particles includes the steps of providing a plurality of granules, each comprising at least one ultra-hard abrasive particle, a precursor for the abrasive particle and a solvent/catalyst for the abrasive particle or precursor of such a solvent/catalyst, placing the granules with a separating medium between adjacent granules in the reaction zone of a high pressure/high temperature apparatus, subjecting the contents of the reaction zone to elevated temperature and pressure conditions at which the ultra-hard abrasive particle is crystallographically stable, recovering thus treated material from the reaction zone and removing the separating medium in the treated material to produce a plurality of discrete abrasive particles.

    Abstract translation: 一种制备多个离散的超硬磨料颗粒的方法包括提供多个颗粒的步骤，每个颗粒包含至少一个超硬磨料颗粒，磨料颗粒的前体和磨料颗粒的溶剂/催化剂， 这种溶剂/催化剂的前体，在高压/高温装置的反应区中将颗粒与相邻颗粒之间的分离介质放置在反应区中，使反应区的内容物经受高温和高压条件，其中超硬 研磨颗粒在晶体学上是稳定的，从反应区回收如此处理的材料并除去处理过的材料中的分离介质以产生多个分散的研磨颗粒。

    High pressure split die and associated methods
    115.
    发明申请
    High pressure split die and associated methods 有权
    高压分模和相关方法

    公开(公告)号：US20050153010A1

    公开(公告)日：2005-07-14

    申请号：US10757715

    申请日：2004-01-13

    Applicant: Chien-Min Sung

    Inventor： Chien-Min Sung

    IPC: B01J3/06 ,  B28B3/00 ,  B29C43/02 ,  B30B11/00 ,  C30B1/00

    CPC classification number: B01J3/065 ,  B01J3/067 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  B30B11/004 ,  B30B11/007 ,  Y10T29/49826 ,  Y10T29/49863 ,  Y10T29/49998 ,  Y10T29/51

    Abstract: An improved high pressure apparatus can include a plurality of complementary die segments. The die segments can have inner surfaces which are shaped to form a die chamber upon assembly of the die segments. A pair of anvils can be oriented such that an anvil is at each end of the die chamber. To prevent the die segments from being forced apart during movement of the anvils, force members can be connected to the die segments. The force members can apply discrete forces to the die segments sufficient to retain the die segments in substantially fixed positions relative to each other during application of force by the pair of anvils. Using such a high pressure apparatus can achieve pressures as high as 10 GPa with improved useful die life and larger reaction volumes.

    Abstract translation: 改进的高压装置可以包括多个互补的模片段。 模具段可以具有内表面，其在模具段的组装时成形为形成模腔。 一对砧座可以被定向成使得砧座在模腔的每个端部。 为了防止模具段在砧座移动期间被迫分开，可以将力构件连接到模具段。 力构件可以向模具段施加离散的力，足以在由一对砧施加力期间将模具段保持在相对于彼此的基本上固定的位置。 使用这种高压装置可以实现高达10GPa的压力，并且具有改善的有用的模具寿命和较大的反应体积。

    High pressure crystal growth apparatuses and associated methods
    116.
    发明申请
    High pressure crystal growth apparatuses and associated methods 失效
    高压晶体生长装置及相关方法

    公开(公告)号：US20050150444A1

    公开(公告)日：2005-07-14

    申请号：US10775042

    申请日：2004-02-06

    Applicant: Chien-Min Sung

    Inventor： Chien-Min Sung

    IPC: B01J3/06 ,  B28B3/00 ,  B29C43/02 ,  B30B11/00 ,  C30B1/00

    CPC classification number: B01J3/065 ,  B01J3/067 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  B30B11/004 ,  B30B11/007 ,  Y10T29/49826 ,  Y10T29/49863 ,  Y10T29/49998 ,  Y10T29/51

    Abstract: High pressure synthesis of various crystals such as diamond, cBN and the like can be carried out using reaction assemblies suitable for use in methods such as temperature gradient methods. The reaction assembly can be oriented substantially perpendicular to gravity during application of high pressure. Orienting the reaction assembly in this manner can avoid detrimental effects of gravity on the molten catalyst, e.g., convection, hence increasing available volumes for growing high quality crystals. Multiple reaction assemblies can be oriented in series or parallel, each reaction assembly having one or more growth cells suitable for growth of high quality crystals. Additionally, various high pressure apparatuses can be used. A split die design allows for particularly effective results and control of temperature and growth conditions for individual crystals.

    Abstract translation: 各种晶体如金刚石，cBN等的高压合成可以使用适用于诸如温度梯度法的方法的反应组件进行。 反应组件可以在施加高压时基本垂直于重力定向。 以这种方式定向反应组件可以避免重力对熔融催化剂的有害影响，例如对流，从而增加用于生长高品质晶体的可用体积。 多个反应组件可以串联或并联取向，每个反应组件具有一个或多个适于生长高质量晶体的生长细胞。 另外，可以使用各种高压装置。 分裂模具设计允许特别有效的结果和控制单个晶体的温度和生长条件。

    Crystal growth
    117.
    发明授权
    Crystal growth 有权
    晶体生长

    公开(公告)号：US06835365B1

    公开(公告)日：2004-12-28

    申请号：US09555518

    申请日：2000-08-23

    Applicant: Geoffrey John Davies ,  Raymond Albert Chapman ,  Aulette Stewart ,  Lesley Kay Hedges

    Inventor： Geoffrey John Davies ,  Raymond Albert Chapman ,  Aulette Stewart ,  Lesley Kay Hedges

    IPC: C01B3106

    CPC classification number: B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068

    Abstract: The invention provides a mass of crystals, particularly diamond crystals, having a size of less than 100 microns and in which mass the majority of the crystals are faceted single crystals. The invention further provides a method of producing such a mass of crystals which utilizes crystal growth under elevated temperature and pressure conditions, the supersaturation driving force necessary for crystal growth being dependent, at least in part, on the difference in surface free energy between low Miller index surfaces and high Miller index surfaces of the crystals. Preferably, the method is carried out under conditions where the Wulff effect dominates.

    Abstract translation: 本发明提供了一种晶体，特别是具有小于100微米尺寸的金刚石晶体，并且其中大部分晶体是刻面单晶。 本发明进一步提供了一种制造这种在升高的温度和压力条件下使用晶体生长的晶体块的方法，晶体生长所需的过饱和驱动力至少部分地取决于低米勒之间的表面自由能的差异 指数表面和晶体的高米勒指数表面。 优选地，该方法在Wulff效应占优势的条件下进行。

    Mgb2 single crystal and its production method, and superconductive material containing mgb2 single crystal
    118.
    发明授权
    Mgb2 single crystal and its production method, and superconductive material containing mgb2 single crystal 失效
    Mgb2单晶及其制备方法，含超导材料含有mgb2单晶

    公开(公告)号：US06787504B2

    公开(公告)日：2004-09-07

    申请号：US10333827

    申请日：2003-01-23

    Applicant: Lee Sergey Romonovich ,  Ayako Yamamoto ,  Setsuko Tajima

    Inventor： Lee Sergey Romonovich ,  Ayako Yamamoto ,  Setsuko Tajima

    IPC: H01L3924

    CPC classification number: C01B35/04 ,  B01J3/062 ,  B01J2203/0605 ,  B01J2203/0645 ,  B01J2203/068 ,  Y10T29/49014 ,  Y10T29/49117

    Abstract: The invention is intended to establish means for manufacturing MB2 single crystals and to provide a useful superconductive material (wire rod and so forth) taking advantage of anisotropic superconductive properties thereof. A mixed raw material of Mg and B or a precursor containing MgB2 crystallites, obtained by causing reaction of the mixed raw material of Mg and B, kept in contact with hexagonal boron nitride (hBN), is held at a high temperature in the range of 1300 to 1700° C. and under a high pressure in the range of 3 to 6 GPa to cause reaction for forming an intermediate product, thereby growing the MB2 single crystals having anisotropic superconductive properties via the intermediate product. The single crystals have features such that, depending on a direction in which a magnetic field is applied thereto, an irreversible magnetic field strength becomes equivalent to not less than 95% of a second magnetic field strength, so that adjustment of crystal orientation thereof results in production of a superconductive material excellent in property. Further, it is useful in effecting growth of the single crystals to cause a reducing agent such as Mg and so forth to coexist at the time of the reaction, or to provide a temperature gradient in melt occurring in the course of the reaction.

    Abstract translation: 本发明旨在建立用于制造MB2单晶的手段，并且利用其各向异性超导性能提供有用的超导材料（线棒等）。 通过与保持与六方氮化硼（hBN）接触的Mg和B的混合原料的反应获得的Mg和B的混合原料或含有MgB 2微晶的前体在高温下保持在 1300至1700℃，在3至6GPa的高压下引起反应，形成中间产物，从而通过中间产物生长具有各向异性超导性的MB2单晶。 单晶具有这样的特征：根据施加磁场的方向，不可逆磁场强度等于不小于第二磁场强度的95％，从而导致晶体取向的调整 生产性能优异的超导材料。 此外，在进行单晶生长以使Mg等还原剂在反应时共存，或在反应过程中提供熔融温度梯度是有用的。

    Method of producing ultra-hard abrasive particles
    119.
    发明申请
    Method of producing ultra-hard abrasive particles 失效
    生产超硬磨粒的方法

    公开(公告)号：US20040076748A1

    公开(公告)日：2004-04-22

    申请号：US10415345

    申请日：2003-09-24

    Inventor： Robert Fries ,  Iakovos Sigalas ,  Manfred Nebelung ,  Geoffrey John Davies

    IPC: B05D007/00

    CPC classification number: C09K3/1436 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/068 ,  C01B32/25

    Abstract: A method of producing a plurality of discrete ultra-hard abrasive particles includes the steps of providing a plurality of granules, each comprising at least one ultra-hard abrasive particle, a precursor for the abrasive particle and a solvent/catalyst for the abrasive particle or precursor of such a solvent/catalyst, placing the granules with a separating medium between adjacent granules in the reaction zone of a high pressure/high temperature apparatus, subjecting the contents of the reaction zone to elevated temperature and pressure conditions at which the ultra-hard abrasive particle is crystallographically stable, recovering thus treated material from the reaction zone and removing the separating medium in the treated material to produce a plurality of discrete abrasive particles.

    Abstract translation: 一种制备多个离散的超硬磨料颗粒的方法包括提供多个颗粒的步骤，每个颗粒包含至少一个超硬磨料颗粒，磨料颗粒的前体和磨料颗粒的溶剂/催化剂， 这种溶剂/催化剂的前体，在高压/高温装置的反应区中将颗粒与相邻颗粒之间的分离介质放置在反应区中，使反应区的内容物经受高温和高压条件，其中超硬 研磨颗粒在晶体学上是稳定的，从反应区回收如此处理的材料并除去处理过的材料中的分离介质以产生多个分散的研磨颗粒。

    Mgb2 single crystal and its production method, and superconductive material containing mgb2 single crystal
    120.
    发明申请
    Mgb2 single crystal and its production method, and superconductive material containing mgb2 single crystal 失效
    Mgb2单晶及其制备方法，含超导材料含有mgb2单晶

    公开(公告)号：US20030146417A1

    公开(公告)日：2003-08-07

    申请号：US10333827

    申请日：2003-01-23

    Inventor： Lee Sergey Romonovich ,  Ayako Yamamoto ,  Setsuko Tajima

    IPC: H01C001/00

    CPC classification number: C01B35/04 ,  B01J3/062 ,  B01J2203/0605 ,  B01J2203/0645 ,  B01J2203/068 ,  Y10T29/49014 ,  Y10T29/49117

    Abstract: The invention is intended to establish means for manufacturing MB2 single crystals and to provide a useful superconductive material (wire rod and so forth) taking advantage of anisotropic superconductive properties thereof. A mixed raw material of Mg and B or a precursor containing MgB2 crystallites, obtained by causing reaction of the mixed raw material of Mg and B, kept in contact with hexagonal boron nitride (hBN), is held at a high temperature in the range of 1300 to 1700null C. and under a high pressure in the range of 3 to 6 GPa to cause reaction for forming an intermediate product, thereby growing the MB2 single crystals having anisotropic superconductive properties via the intermediate product. The single crystals have features such that, depending on a direction in which a magnetic field is applied thereto, an irreversible magnetic field strength becomes equivalent to not less than 95% of a second magnetic field strength, so that adjustment of crystal orientation thereof results in production of a superconductive material excellent in property. Further, it is useful in effecting growth of the single crystals to cause a reducing agent such as Mg and so forth to coexist at the time of the reaction, or to provide a temperature gradient in melt occurring in the course of the reaction.

    Abstract translation: 本发明旨在建立用于制造MB2单晶的手段，并且利用其各向异性超导性能来提供有用的超导材料（线棒等）。 通过与保持与六方氮化硼（hBN）接触的Mg和B的混合原料的反应获得的Mg和B的混合原料或含有MgB 2微晶的前体在高温下保持在 1300至1700℃，在3至6GPa的高压下引起反应，形成中间产物，从而通过中间产物生长具有各向异性超导性的MB2单晶。 单晶具有这样的特征：根据施加磁场的方向，不可逆磁场强度等于不小于第二磁场强度的95％，从而导致晶体取向的调整 生产性能优异的超导材料。 此外，在进行单晶生长以使Mg等还原剂在反应时共存，或在反应过程中提供熔融温度梯度是有用的。

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