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    Field emission cathode
    112.
    发明授权
    Field emission cathode 失效
    场发射阴极

    公开(公告)号：US3735186A

    公开(公告)日：1973-05-22

    申请号：US12285171

    申请日：1971-03-10

    Applicant: PHILIPS CORP

    Inventor： KLOPFER A ,  DITTMER G

    IPC: H01J1/304 ,  H01J1/30 ,  H01J1/02 ,  H01J31/08

    CPC classification number: H01J1/3042 ,  H01J2201/30403

    Abstract: A field emission cathode comprises a glass substrate in combination with an insulating layer sandwiched between two conducting layers functioning as electrodes. Cavities extending through one of the electrodes and the insulating layer to the surface of the other electrode contain highly compacted and porous electron emissive layers which provide high electrical resistance between said electrodes and are diffused with metallic gold to form needle-shaped metal deposits on the surface as well as within the emissive layers. Such cathodes are used in image converters and image display tubes.

    Abstract translation: 场发射阴极包括与夹在用作电极的两个导电层之间的绝缘层组合的玻璃基板。 通过电极和绝缘层中的一个延伸到另一个电极的表面的腔包含高度压实和多孔的电子发射层，其在所述电极之间提供高电阻并且与金属金扩散以在表面上形成针状金属沉积物 以及在发射层内。 这种阴极用于图像转换器和图像显示管中。

    Field emission cathode plate and method for fabricating the same
    114.
    发明申请
    Field emission cathode plate and method for fabricating the same 审中-公开
    场发射阴极板及其制造方法

    公开(公告)号：US20100123382A1

    公开(公告)日：2010-05-20

    申请号：US12385890

    申请日：2009-04-23

    Applicant: Hung-Yuan Li ,  Jian-Min Jeng ,  Ching-Hsuang Cheng ,  Nien-Chun Chin ,  Tzung-Han Yang

    Inventor： Hung-Yuan Li ,  Jian-Min Jeng ,  Ching-Hsuang Cheng ,  Nien-Chun Chin ,  Tzung-Han Yang

    IPC: H01J1/14 ,  H01J9/04

    CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/3195

    Abstract: A field emission cathode plate is disclosed, which includes: a substrate; a cathode layer, disposed on the substrate; a conductive layer with an arc surface or a resistor layer with an opening and resistivity larger than that of the cathode layer, disposed on the cathode layer; and a cambered field emission layer, having an arc surface and disposed on the conductive layer or on the cathode layer in the opening of the resistor layer and covering the resistor layer around the opening. The present invention also provides a method for fabricating the above-mentioned field emission cathode plate. The method can provide field emission cathode plate achieving uniform field emission and does not involve high resolution and cost.

    Abstract translation: 公开了一种场致发射阴极板，其包括：基板; 阴极层，设置在所述基板上; 设置在阴极层上的具有电弧表面的导电层或具有大于阴极层的开口和电阻率的电阻层的电阻层; 和具有弧形表面的弧形场发射层，并且设置在电阻层的开口中的导电层上或阴极层上，并围绕开口覆盖电阻层。 本发明还提供一种制造上述场致发射阴极板的方法。 该方法可以提供场发射阴极板实现均匀的场发射，并且不涉及高分辨率和成本。

    Method of operating and process for fabricating an electron source
    116.
    发明申请
    Method of operating and process for fabricating an electron source 失效

    公开(公告)号：US20080095315A1

    公开(公告)日：2008-04-24

    申请号：US12001631

    申请日：2007-12-12

    Applicant: Heinz Busta

    Inventor： Heinz Busta

    IPC: H01J35/32 ,  H01J9/02

    CPC classification number: H01J1/3042 ,  H01J1/3046 ,  H01J9/025 ,  H01J35/065 ,  H01J2201/30403 ,  H01J2201/30423

    Abstract: A method of operating and process for fabricating an electron source. A conductive rod is covered by an insulating layer, by dipping the rod in an insulation solution, for example. The rod is then covered by a field emitter material to form a layered conductive rod. The rod may also be covered by a second insulating material. Next, the materials are removed from the end of the rod and the insulating layers are recessed with respect to the field emitter layer so that a gap is present between the field emitter layer and the rod. The layered rod may be operated as an electron source within a vacuum tube by applying a positive bias to the rod with respect to the field emitter material and applying a higher positive bias to an anode opposite the rod in the tube. Electrons will accelerate to the charged anode and generate soft X-rays.

    Electronic emitters with dopant gradient
    119.
    发明申请
    Electronic emitters with dopant gradient 审中-公开
    具有掺杂剂梯度的电子发射体

    公开(公告)号：US20060226765A1

    公开(公告)日：2006-10-12

    申请号：US11450039

    申请日：2006-06-08

    Applicant: David Cathey

    Inventor： David Cathey

    IPC: H01J63/04 ,  H01J1/62

    CPC classification number: H01J1/3044 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  Y10S148/116 ,  Y10S148/172 ,  Y10S438/978

    Abstract: Electron emitters and a method of fabricating emitters are disclosed, having a concentration gradient of impurities, such that the highest concentration of impurities is at the apex of the emitters and decreases toward the base of the emitters. The method comprises the steps of doping, patterning, etching, and oxidizing the substrate, thereby forming the emitters having impurity gradients.

    Abstract translation: 公开了电子发射器和制造发射体的方法，其具有杂质的浓度梯度，使得最高浓度的杂质位于发射体的顶点并朝向发射体的基底减小。 该方法包括掺杂，图案化，蚀刻和氧化衬底的步骤，从而形成具有杂质梯度的发射体。

    Cathode assemblies
    120.
    发明授权
    Cathode assemblies 失效
    阴极组件

    公开(公告)号：US07091513B1

    公开(公告)日：2006-08-15

    申请号：US09711587

    申请日：2000-11-13

    Applicant: Ammar Derraa

    Inventor： Ammar Derraa

    IPC: H01L29/06 ,  H01L29/12

    CPC classification number: H01J9/025 ,  H01J2201/30403

    Abstract: In one aspect, the invention encompasses a method of treating the end portions of an array of substantially upright silicon-comprising structures. A substrate having a plurality of substantially upright silicon-comprising structures extending thereover is provided. The substantially upright silicon-comprising structures have base portions, and have end portions above the base portions. A masking layer is formed over the substrate to cover the base portions of the substantially upright silicon-comprising structures while leaving the end portions exposed. The end portions are then exposed to conditions which alter the end portions relative to the base portions. In another aspect, the invention encompasses a method of treating the ends of an array of silicon-comprising emitter structures. A substrate having a plurality of silicon-comprising emitter structures thereover is provided. The emitter structures have base portions and ends above the base portions. A layer of spin-on-glass is formed over the substrate. The layer of spin-on-glass covers the base portions of the emitter structures and leaves the ends exposed. The ends are then exposed to conditions which alter the ends relative to the base portions. In yet another aspect, the invention encompasses a cathode assembly which includes a plurality of silicon-comprising emitter structures projecting over a substrate. The emitter structures have base portions and ends above the base portions, and the ends comprise a different material than the base portions.

    Abstract translation: 在一个方面，本发明包括一种处理基本上直立的含硅结构阵列的端部的方法。 提供了一种具有多个基本上直立的含硅结构延伸到其上的衬底。 基本上直立的含硅结构具有基部，并且在基部上方具有端部。 掩模层形成在衬底上以覆盖基本上直立的含硅结构的基部，同时使端部露出。 然后将端部暴露于相对于基部改变端部的条件。 在另一方面，本发明包括处理含硅发射体结构阵列的端部的方法。 提供了具有多个其上含硅的发射体结构的衬底。 发射极结构具有基部并且在基部上方结束。 在衬底上形成一层旋涂玻璃。 旋涂玻璃层覆盖发射器结构的基部并使端部露出。 然后将端部暴露于相对于基部改变端部的条件。 在另一方面，本发明包括阴极组件，其包括在衬底上突出的多个包含硅的发射器结构。 发射极结构具有基部和端部在基部之上，并且端部包括与基部不同的材料。

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