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公开(公告)号：US11655379B2
公开(公告)日：2023-05-23
申请号：US17182814
申请日：2021-02-23
Inventor： Guoyun Zhou , Yan Hong , Jiujuan Li , Wei He , Yuanming Chen , Shouxu Wang , Dainan Zhang , Chong Wang
CPC classification number: C09D5/24 , C08G73/0266 , C09D165/00 , C25D3/38 , C25D5/56 , C25D21/10 , C08K2003/085 , C08K2003/0806 , C08K2201/001
Abstract: A composite conductive polymer, a preparation method thereof and application thereof are disclosed, wherein a mixed solution A is used in the preparation process of the composite conductive polymer, which comprises the following two components: (i) a strong oxidant selected from at least one of permanganate, persulfate, dichromate and perchlorate; (ii) an oxidizing agent containing a metal ion capable of being reduced to elementary substance. The preparation process is simple and easy to operate, with low cost and favorable environmental protection and the obtained composite conductive polymer containing metal in elementary form, has good film-forming property and the film thereof can completely cover the surface of the insulating substrate, with excellent electrical conductivity, which therefore can be widely used in electroplating materials and semiconductor materials and other fields.
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122.发明公开公开(公告)号：US20230152444A1
公开(公告)日：2023-05-18
申请号：US17989162
申请日：2022-11-17
Applicant: Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China
Inventor： Haitao Lyu , Jiang Qian , Junzheng Jiang , Minfeng Xing
CPC classification number: G01S13/9027 , G01S7/417 , G01S13/9064
Abstract: A noise suppression method and system for Inverse Synthetic Aperture Radar micro-cluster objects using a generative adversarial network (GAN) are provided. The method includes: constructing the GAN, including a generator and a discriminator; obtaining and inputting noisy simulation data into the generator to obtain a first output, comparing the first output with noiseless simulation data to obtain a first generator loss, inputting the first output and the distribution function into the discriminator for denoising discrimination to obtain a first discriminant result, and determining a second generator loss according to the first generator loss and the first discriminate result; and obtaining measured data and inputting the measured data into the generator to obtain a second output, inputting the second output to the discriminator to obtain a second discriminant result, and determining a generator loss according to the second generator and the second discriminate result.
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123.发明公开公开(公告)号：US20230152360A1
公开(公告)日：2023-05-18
申请号：US18098704
申请日：2023-01-19
Inventor： Cheng Zeng , Tianhui Sun , Junsong Ning , Shirong Bu , Zhanping Wang
IPC: G01R27/26
CPC classification number: G01R27/2688
Abstract: A device for measuring a microwave surface resistance of a dielectric conductor deposition interface includes: a test platform, a calibration component, a sealing cavity and a support plate; wherein the test platform comprises: a shielding cavity having an open bottom, a dielectric rod, an input coupling structure, an output coupling structure, and a dielectric supporter; the dielectric conductor test sample and the test platform form a TE0m(n+δ) mode dielectric resonator; the calibration component and the dielectric conductor test sample are mounted on the test platform to measure corresponding quality factors, thereby calculating the microwave surface resistance of the deposition interface of the dielectric conductor test sample. The present invention requires no pre-measurement of relative permittivity and loss tangent of the dielectric conductor test sample. After calibration, the microwave surface resistance of the dielectric conductor deposition interface can be obtained by only one non-destructive measurement.
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公开(公告)号：US20230135062A1
公开(公告)日：2023-05-04
申请号：US17979079
申请日：2022-11-02
Inventor： MengJiang Xing , MingShan Qu , HongYu Yang
IPC: C04B35/495 , C04B35/626 , C04B35/634 , C04B35/638 , C04B35/64 , H01B3/12
Abstract: A temperature-stable modified NiO—Ta2O5-based microwave dielectric ceramic material and a preparation method thereof are provided. Using ion doping modification to form solid solution structure is an important measure to adjust microwave dielectric properties, especially the temperature stability. Based on formation rules of the solid solution, ion replacement methods are designed including Ni2+ ions are replaced by Cu2+ ions, and (Ni1/3Ta2/3)4+ composite ions are replaced by [(Al1/2Nb1/2)ySn1-y]4+ composite ions, which considers that cations with similar ionic radii to Ni2+ and Ta5+ ions can be introduced into the NiTa2O6 ceramic for doping under the same coordination environment (coordination number=6), and therefore a ceramic material with the NiTa2O6 solid solution structure can be obtained. The microwave dielectric ceramic material with excellent temperature stability and low loss is finally prepared by adjusting molar contents of each of doped ions, and its microwave dielectric properties are excellent.
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公开(公告)号：US20230132916A1
公开(公告)日：2023-05-04
申请号：US17979922
申请日：2022-11-03
Applicant: Yangtze Delta Region Institute of University of Electronic Science and Technology of China, Huzhou
Inventor： MengJiang Xing , XiaoZhen Li , HongYu Yang , MingShan Qu
IPC: C04B35/495 , C04B35/64 , C04B35/626
Abstract: The invention belongs to the field of electronic ceramics and its manufacturing, in particular to the modified NiTa2O6-based microwave dielectric ceramic material co-sintered at low temperature and its preparation method. Based on the low melting point characteristics of CuO and B2O3, and the radius of Cu2+ ions is similar to that of Ni2+ and Ta5+ ions, the chemical general formula of the invention is designed as xCuO-(1-x)NiO-[7.42y+(xy/14.33)]B2O3—Ta2O5, and the molar content of each component is adjusted from raw materials. The main crystalline phase of NiTa2O6 is synthesized at a lower pre-sintering temperature, and NiTa2O6-based ceramic material with low-temperature sintering characteristics and excellent microwave dielectric properties are directly synthesized at one time, which broadened the application range in LTCC field.
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Patent Agency Ranking
公开(公告)号：US20230090883A1
公开(公告)日：2023-03-23
申请号：US17752891
申请日：2022-05-25
Inventor： Jinping ZHANG , Rongrong ZHU , Yuanyuan TU , Zehong LI , Bo ZHANG
IPC: H01L29/06 , H01L29/739 , H01L29/66 , H01L29/10 , H01L29/08
Abstract: A three-dimensional carrier stored trench IGBT and a manufacturing method thereof are provided. A P-type buried layer and a split gate electrode with equal potential to an emitter metal is introduced on the basis of the traditional carrier stored trench IGBT, which can effectively eliminate the influence of an N-type carrier stored layer on breakdown characteristics of the device through the charge compensation, and at the same time can reduce the on-state voltage drop and improve the trade-off relationship between the on-state voltage drop Vceon and the turn-off loss Eoff. The split gate electrodes is introduced in the Z-axis direction, so that the gate electrodes are distributed at intervals. Therefore, the channel density is reduced. The turning on of the parasitic PMOS has a potential-clamping effect on the NMOS channel, so that the saturation current can be reduced and a wider short-circuit safe operating area (SCSOA) can be obtained.
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公开(公告)号：US20230088637A1
公开(公告)日：2023-03-23
申请号：US17752889
申请日：2022-05-25
Inventor： Jinping ZHANG , Yuanyuan TU , Rongrong ZHU , Zehong LI , Bo ZHANG
IPC: H01L29/739 , H01L29/06 , H01L29/10 , H01L29/40 , H01L21/761 , H01L21/765 , H01L29/66
Abstract: A split gate carrier stored trench bipolar transistor (CSTBT) with current clamping PMOS include a P-type buried layer and a split gate electrode with equal potential to an emitter metal on the basis of the traditional CSTBT, which effectively eliminates the influence of an N-type carrier stored layer on breakdown characteristics of the device through the charge compensation effect, and helps to improve the trade-off relationship between the on-state voltage drop and the turn-off loss. Moreover, the introduction of a parasitic PMOS structure can reduce the saturation current and improve short-circuit safe operating area of the device, reduce the Miller capacitance, and improve the switching speed of the device and reduce the switching loss of the device. In addition, the split gate CSTBT integrating the split gate electrode and gate electrode in the same trench can shorten the distance between PMOS and NMOS channels.
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公开(公告)号：US20230036698A1
公开(公告)日：2023-02-02
申请号：US17876582
申请日：2022-07-29
Applicant: University of Electronic Science and Technology of China , Institute of Electronic and Information Engineering of UESTC in Guangdong
Inventor： Ruize SUN , Wanjun CHEN , Chao LIU , Pan LUO , Fangzhou WANG
IPC: H01L29/20 , H01L29/66 , H01L29/778 , H01L29/06
Abstract: A reverse blocking gallium nitride (GaN) high electron mobility transistor includes, sequentially stacked from bottom to top, a substrate, a nucleation layer, a buffer layer, a barrier layer, a dielectric layer. The buffer layer and the barrier layer form a heterojunction structure. The barrier layer is provided with at least two p-GaN structures. The barrier layer is provided with a source metal at one end and a drain metal at the other end, source metal forms ohmic contact and drain metal forms Schottky contact with AlGaN barrier, respectively. In forward conduction, the two-dimensional electron gas below the spaced p-GaN structure connected to the drain metal is conductive, and a turn-on voltage of the device is low. During reverse blocking, the two-dimensional electron gas at the spaced p-GaN structure is rapidly depleted under reverse bias, to form a depletion region, so that the blocking capability of the device is improved.
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129.发明申请公开(公告)号：US20230033271A1
公开(公告)日：2023-02-02
申请号：US17962511
申请日：2022-10-09
IPC: E21B47/005 , G01V1/50
Abstract: A reverse time migration imaging method for cased-hole based on ultrasonic pitch-catch measurement, including: calculating a theoretical dispersion curve; expanding original Lamb data of two receivers into array waveform data based on phase-shift interpolation; establishing a two-dimensional migration velocity model including density, P-wave velocity and S-wave velocity of a target area; generating and storing a forward propagating ultrasonic wavefield for each time step; reversing a time axis; generating and storing a reversely propagating ultrasonic Lamb wavefield for the two receivers after phase-shift interpolation; calculating envelopes of the forward propagating ultrasonic Lamb wavefield and the reversely propagating ultrasonic Lamb wavefield; applying a zero-lag cross-correlation imaging condition to obtain reverse time migration imaging results; and applying Laplace filtering to suppress low-frequency imaging noises in the imaging results.
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公开(公告)号：US20220390495A1
公开(公告)日：2022-12-08
申请号：US17467328
申请日：2021-09-06
IPC: G01R23/16
Abstract: The present invention is related to a signal spectrum analysis technology based on linear frequency modulation transformation (LFM) and fast digital pulse compression, which comprises two parts: a circuit for linear frequency modulation signal and an algorithm for fast digital pulse compression. Wherein, in the circuit the modulated chirp signals are obtained by the input signals mixing with the LO chirp signal and then filtered by the band-pass filter the intermediate frequency (IF) chirp signals are produced. The IF signals are composed of the chirp signals with the same frequency band and the chirp rate, but different initial times. Due to the IF chirp signals being orthogonal to each other, the spectrum of the input signals is extracted by the initial time and the orthogonal accumulation. The full spectrum of the input signal is obtained by changing the start position of the sampling data sets along the time axis. The present invention achieves fast high-resolution spectrum analysis by combining the circuit for linear frequency modulation signal and the algorithm for fast digital pulse compression.
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