摘要:
Disclosed is a method for converting cellulose in a lignocellulosic biomass. The method provides for a lignin-blocking polypeptide and/or protein treatment of high lignin solids. The treatment enhances cellulase availability in cellulose conversion and allows for the determination of optimized pretreatment conditions. Additionally, ethanol yields from a Simultaneous Saccharification and Fermentation process are improved 5-25% by treatment with a lignin-blocking polypeptide and/or protein. Thus, a more efficient and economical method of processing lignin containing biomass materials utilizes a polypeptide/protein treatment step that effectively blocks lignin binding of cellulase.
摘要:
A device and a method for automatic frequency correction are used in mobile radio receivers. After channel estimation has been performed, the phases of the received data symbols are analyzed in order to determine the frequency shift. Following the phase analysis, a phase correction of the received data symbols is performed.
摘要:
The present invention includes methods and apparatuses that utilize microchannel technology and, more specifically in exemplary form, producing hydrogen peroxide using microchannel technology. An exemplary process for producing hydrogen peroxide comprises flowing feed streams into intimate fluid communication with one another within a process microchannel to form a reactant mixture stream comprising a hydrogen source and an oxygen source such as, without limitation, hydrogen gas and oxygen gas. Thereafter, a catalyst is contacted by the reactant mixture and is operative to convert a majority of the reactant mixture to hydrogen peroxide that is withdrawn via an egressing product stream. During the hydrogen peroxide chemical reaction, exothermic energy is generated. This exothermic energy is absorbed by the fluid within the microchannel as well as the microchannel itself. In a preferred embodiment, a heat exchange fluid is in thermal communication with the microchannel housing the exothermic reaction and is operative to absorb a portion of this exothermic energy and transfer such energy from the microchannel.
摘要:
The present invention relates to the field of bioengineering. It provides a Candida antarctica lipase B mutant and its application. The mutant enzyme overcomes the limit of the parent enzyme that can exhibit high enantioselectivity towards (R)-3-TBDMSO glutaric acid methyl monoester only at temperatures below 5° C. The mutant enzyme successfully increased R-ee value at 5-70° C. The mutant D223V/A281S exhibits high R-ee value (>99%), high conversion rate (80%), and high space-time yield (107.54 g L−1 d−1). The present invention lays a foundation for industrial production of (R)-3-TBDMSO glutaric acid methyl monoester using a biosynthesis approach and provide insights into conformational dynamics-based enzyme design.
摘要:
The present application provides a screen method for intaglio printing, comprising: dividing multiple classes of regions according to a brightness range; and generating screen dots with various screen patterns for the grouped classes of regions. The present application also provides a screen device for intaglio printing, comprising: a dividing module configured to group multiple classes of regions according to the brightness range; and a generating module configured to generate screen dots with various screen patterns for the grouped classes of regions. Since multiple kinds of screen patterns are applied in the technical solutions in present application, the problem, i.e., water ripple will occur in the prior art, may be addressed, so as to improve the quality of printing.
摘要:
The invention provides apparatuses and techniques for controlling flow between a manifold and two or more connecting microchannels. Flow between plural connecting microchannels, that share a common manifold, can be made more uniform by the use of flow straighteners and distributors that equalize flow in connecting channels. Alternatively, flow can be made more uniform by sections of narrowed diameter within the channels. Methods of making apparatus and methods of conducting unit operations in connecting channels are also described.
摘要:
A multigate structure which comprises a semiconductor substrate; an ultra-thin silicon or carbon bodies of less than 20 nanometers thick located on the substrate; an electrolessly deposited metallic layer selectively located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and selectively located on top of the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, and wherein the ultra-thin silicon or carbon bodies and metallic layer located thereon form source and drain regions is provided along with a process to fabricate the structure.
摘要:
An amplitude modulation screening method is provided. The method comprises a step of utilizing regular hexagon screen dots to form a threshold matrix for amplitude screening. In embodiments of the present application, an amplitude modulation screening apparatus is also provided. The apparatus may comprise a matrix module configured to constitute a threshold matrix for amplitude screening using regular hexagon screen dots. Due to the threshold matrix formed with regular hexagon screen dots, the method and apparatus of the present application resolve the problem of the screen dots in the prior art, and improve the printing quality.
摘要:
A fabrication method for a semiconductor device structure is provided. The device structure has a layer of silicon and a layer of silicon dioxide overlying the layer of silicon, and the method begins by forming an isolation recess by removing a portion of the silicon dioxide and a portion of the silicon. The isolation recess is filled with stress-inducing silicon nitride and, thereafter, the silicon dioxide is removed such that the stress-inducing silicon nitride protrudes above the silicon. Next, the exposed silicon is thermally oxidized to form silicon dioxide hardmask material overlying the silicon. Thereafter, a first portion of the silicon dioxide hardmask material is removed to reveal an accessible surface of the silicon, while leaving a second portion of the silicon dioxide hardmask material intact. Next, silicon germanium is epitaxially grown from the accessible surface of the silicon.