Lignin blockers and uses thereof
    122.
    发明申请
    Lignin blockers and uses thereof 有权
    木质素阻滞剂及其用途

    公开(公告)号:US20060088922A1

    公开(公告)日:2006-04-27

    申请号:US11229817

    申请日:2005-09-19

    IPC分类号: C12P7/06

    摘要: Disclosed is a method for converting cellulose in a lignocellulosic biomass. The method provides for a lignin-blocking polypeptide and/or protein treatment of high lignin solids. The treatment enhances cellulase availability in cellulose conversion and allows for the determination of optimized pretreatment conditions. Additionally, ethanol yields from a Simultaneous Saccharification and Fermentation process are improved 5-25% by treatment with a lignin-blocking polypeptide and/or protein. Thus, a more efficient and economical method of processing lignin containing biomass materials utilizes a polypeptide/protein treatment step that effectively blocks lignin binding of cellulase.

    摘要翻译: 公开了一种在木质纤维素生物质中转化纤维素的方法。 该方法提供高木质素固体的木质素阻断多肽和/或蛋白质处理。 该处理增强了纤维素转化中的纤维素酶可用性,并且允许确定优化的预处理条件。 此外,通过用木质素阻断多肽和/或蛋白质处理,来自同时糖化和发酵过程的乙醇产率提高了5-25%。 因此,处理含木质素的生物质材料的更有效和经济的方法利用有效阻断木质素结合纤维素酶的多肽/蛋白质处理步骤。

    Automatic frequency correction for mobile radio receivers

    公开(公告)号:US07016404B2

    公开(公告)日:2006-03-21

    申请号:US10379988

    申请日:2003-03-05

    申请人: Bin Yang

    发明人: Bin Yang

    IPC分类号: H04B17/02 H04B1/18

    CPC分类号: H04L27/2332 H04L2027/0065

    摘要: A device and a method for automatic frequency correction are used in mobile radio receivers. After channel estimation has been performed, the phases of the received data symbols are analyzed in order to determine the frequency shift. Following the phase analysis, a phase correction of the received data symbols is performed.

    Candida antarctica lipase B mutant, and methods for making and using the same

    公开(公告)号:US10131889B1

    公开(公告)日:2018-11-20

    申请号:US15810007

    申请日:2017-11-11

    申请人: Liming Liu Bin Yang

    发明人: Liming Liu Bin Yang

    摘要: The present invention relates to the field of bioengineering. It provides a Candida antarctica lipase B mutant and its application. The mutant enzyme overcomes the limit of the parent enzyme that can exhibit high enantioselectivity towards (R)-3-TBDMSO glutaric acid methyl monoester only at temperatures below 5° C. The mutant enzyme successfully increased R-ee value at 5-70° C. The mutant D223V/A281S exhibits high R-ee value (>99%), high conversion rate (80%), and high space-time yield (107.54 g L−1 d−1). The present invention lays a foundation for industrial production of (R)-3-TBDMSO glutaric acid methyl monoester using a biosynthesis approach and provide insights into conformational dynamics-based enzyme design.

    Screening method and apparatus for use in intaglio printing
    126.
    发明授权
    Screening method and apparatus for use in intaglio printing 有权
    用于凹版印刷的筛选方法和装置

    公开(公告)号:US09182661B2

    公开(公告)日:2015-11-10

    申请号:US13996967

    申请日:2011-12-24

    申请人: Haifeng Li Bin Yang

    发明人: Haifeng Li Bin Yang

    IPC分类号: H04N1/405 G03F5/20

    CPC分类号: G03F5/20 H04N1/4055

    摘要: The present application provides a screen method for intaglio printing, comprising: dividing multiple classes of regions according to a brightness range; and generating screen dots with various screen patterns for the grouped classes of regions. The present application also provides a screen device for intaglio printing, comprising: a dividing module configured to group multiple classes of regions according to the brightness range; and a generating module configured to generate screen dots with various screen patterns for the grouped classes of regions. Since multiple kinds of screen patterns are applied in the technical solutions in present application, the problem, i.e., water ripple will occur in the prior art, may be addressed, so as to improve the quality of printing.

    摘要翻译: 本申请提供了一种用于凹版印刷的屏幕方法,包括:根据亮度范围划分多个类别的区域; 并且为分组的区域类别生成具有各种屏幕图案的屏幕点。 本申请还提供了一种用于凹版印刷的屏幕装置,包括:分割模块,被配置为根据亮度范围对多个类别的区域进行分组; 以及生成模块,被配置为生成用于所述分组的区域类别的各种屏幕图案的屏幕点。 由于在本申请中的技术方案中应用了多种屏幕图案,所以可以解决现有技术中出现的水波纹问题,以提高打印质量。

    Amplification modulation screening method and apparatus
    129.
    发明授权
    Amplification modulation screening method and apparatus 有权
    放大调制筛选方法及装置

    公开(公告)号:US08995023B2

    公开(公告)日:2015-03-31

    申请号:US13996907

    申请日:2011-12-23

    申请人: Haifeng Li Bin Yang

    发明人: Haifeng Li Bin Yang

    IPC分类号: H04N1/405 G09G3/20 G06T11/40

    摘要: An amplitude modulation screening method is provided. The method comprises a step of utilizing regular hexagon screen dots to form a threshold matrix for amplitude screening. In embodiments of the present application, an amplitude modulation screening apparatus is also provided. The apparatus may comprise a matrix module configured to constitute a threshold matrix for amplitude screening using regular hexagon screen dots. Due to the threshold matrix formed with regular hexagon screen dots, the method and apparatus of the present application resolve the problem of the screen dots in the prior art, and improve the printing quality.

    摘要翻译: 提供了一种幅度调制屏蔽方法。 该方法包括利用正六边形屏幕点形成用于振幅筛选的阈值矩阵的步骤。 在本申请的实施例中,还提供了幅度调制筛选装置。 该装置可以包括矩阵模块,该矩阵模块被配置为使用正六边形屏幕点构成用于振幅筛选的阈值矩阵。 由于由正六边形屏幕点形成的阈值矩阵,本申请的方法和装置解决了现有技术中屏幕点的问题,并提高了打印质量。

    Semiconductor device fabrication method for improved isolation regions and defect-free active semiconductor material
    130.
    发明授权
    Semiconductor device fabrication method for improved isolation regions and defect-free active semiconductor material 有权
    用于改进隔离区域和无缺陷活性半导体材料的半导体器件制造方法

    公开(公告)号:US08987110B2

    公开(公告)日:2015-03-24

    申请号:US13467730

    申请日:2012-05-09

    申请人: Man Fai Ng Bin Yang

    发明人: Man Fai Ng Bin Yang

    摘要: A fabrication method for a semiconductor device structure is provided. The device structure has a layer of silicon and a layer of silicon dioxide overlying the layer of silicon, and the method begins by forming an isolation recess by removing a portion of the silicon dioxide and a portion of the silicon. The isolation recess is filled with stress-inducing silicon nitride and, thereafter, the silicon dioxide is removed such that the stress-inducing silicon nitride protrudes above the silicon. Next, the exposed silicon is thermally oxidized to form silicon dioxide hardmask material overlying the silicon. Thereafter, a first portion of the silicon dioxide hardmask material is removed to reveal an accessible surface of the silicon, while leaving a second portion of the silicon dioxide hardmask material intact. Next, silicon germanium is epitaxially grown from the accessible surface of the silicon.

    摘要翻译: 提供了半导体器件结构的制造方法。 器件结构具有硅层和覆盖硅层的二氧化硅层,并且该方法开始于通过去除一部分二氧化硅和一部分硅来形成隔离凹槽。 隔离凹部填充有应力诱导性氮化硅,然后去除二氧化硅,使得应力诱导性氮化硅突出于硅上方。 接下来,暴露的硅被热氧化以形成覆盖在硅上的二氧化硅硬掩模材料。 此后,去除二氧化硅硬掩模材料的第一部分以露出硅的可接近表面,同时留下二氧化硅硬掩模材料的第二部分完好无损。 接下来,从硅的可接近表面外延生长硅锗。