Boundary scan circuit
    121.
    发明授权
    Boundary scan circuit 失效
    边界扫描电路

    公开(公告)号:US07032147B2

    公开(公告)日:2006-04-18

    申请号:US10405489

    申请日:2003-04-03

    Applicant: Hitoshi Tanaka

    Inventor: Hitoshi Tanaka

    CPC classification number: G01R31/318541 G01R31/318555

    Abstract: An electronic device includes a first circuit, a second circuit, and a boundary scan circuit. The boundary scan circuit includes a boundary scan register having a first cell connected to an input node of the first circuit, and a second cell connected between an output node of the first circuit and an input node of the second circuit. The second cell has a latch flip-flop. The boundary scan circuit also includes an interface that enables and disables the latching operation of the latch flip-flop according to an input instruction code. While the latching operation is disabled, the output from the latch flip-flop to the second circuit remains unchanged. In this state, the boundary scan circuit can be used to test the first circuit without unintended effects on the second circuit.

    Abstract translation: 电子设备包括第一电路,第二电路和边界扫描电路。 边界扫描电路包括具有连接到第一电路的输入节点的第一单元的边界扫描寄存器,以及连接在第一电路的输出节点和第二电路的输入节点之间的第二单元。 第二个单元具有锁存器触发器。 边界扫描电路还包括根据输入指令代码启用和禁止锁存触发器的锁存操作的接口。 当锁存操作被禁止时,锁存触发器到第二电路的输出保持不变。 在这种状态下,可以使用边界扫描电路来测试第一电路,而不会对第二电路产生不期望的影响。

    Step-zoom lens
    122.
    发明授权
    Step-zoom lens 失效
    分步变焦镜头

    公开(公告)号:US06940658B2

    公开(公告)日:2005-09-06

    申请号:US10731473

    申请日:2003-12-10

    CPC classification number: G02B7/021 G02B7/10

    Abstract: A step-zoom lens includes two movable lens groups; a lens group support unit; and a cam ring having a cam groove. The cam groove includes a finite number of focal-length steps, so as to perform a focusing operation between infinite and closest photographing positions at each focal-length step. The cam groove includes a wide-angle mode section, a telephoto mode section, and a mode switching section. The closest photographing positions in two adjacent focal-length steps and the infinite photographing positions in two adjacent focal-length steps are adjacent to each other, respectively. One focal-length step of the infinite photographing position at a longest focal length in the wide-angle mode section is provided at one end of the mode switching section, and another focal-length step of the infinite photographing position at a shortest focal length in the telephoto mode section is provided at the other end.

    Abstract translation: 步进变焦镜头包括两个可移动透镜组; 镜头组支持单元; 以及具有凸轮槽的凸轮环。 凸轮槽包括有限数量的焦距步长,以便在每个焦距步长处在无限和最近拍摄位置之间进行聚焦操作。 凸轮槽包括广角模式部分,长焦模式部分和模式切换部分。 两个相邻焦距步长中最接近的拍摄位置和两个相邻焦距步长中的无限拍摄位置分别相邻。 在模式切换部分的一端设置广角模式部分中最长焦距处的无限拍摄位置的一个焦距步长,并且在最短焦距处的无限拍摄位置的另一焦距步长 在另一端设置长焦模式部分。

    Method and apparatus for controlling synchronous motor
    123.
    发明授权
    Method and apparatus for controlling synchronous motor 有权
    用于控制同步电动机的方法和装置

    公开(公告)号:US06803739B2

    公开(公告)日:2004-10-12

    申请号:US10231005

    申请日:2002-08-30

    CPC classification number: H02P6/06 H02P6/08

    Abstract: A method and apparatus of controlling a synchronous motor having a rotor, and a stator which produces a magnetic flux for rotating the rotor about an axis thereof, the method including the steps of detecting an angular position and a rotating speed of the rotor; estimating a phase difference between a voltage and an electric current of the synchronous motor, on the basis of the detected rotating speed of the rotor; and adjusting an advance angle of the rotor upon excitation of the synchronous motor, as a result of comparison of the detected rotating speed of the rotor with a target value, to thereby control the rotating speed and direction of the rotor.

    Abstract translation: 一种控制具有转子的同步电动机的方法和装置,以及产生用于使转子围绕其轴线旋转的磁通量的定子,该方法包括以下步骤:检测转子的角位置和转速; 基于检测到的转子的转速来估计同步电动机的电压和电流之间的相位差; 并且通过将检测到的转子的转速与目标值进行比较,来调整同步电动机的励磁时的转子的提前角度,从而控制转子的转速和转向。

    Plated material, method of producing same, and electrical/electronic part using same
    124.
    发明授权
    Plated material, method of producing same, and electrical/electronic part using same 有权
    电镀材料,其制造方法以及使用其的电气/电子部件

    公开(公告)号:US06770383B2

    公开(公告)日:2004-08-03

    申请号:US10247319

    申请日:2002-09-18

    Abstract: To provide a plated material having both high heat-resistance and good insertability/extractability. The plated material comprises an undercoating of any one of metals belonging to group 4, group 5, group 6, group 7, group 8, group 9 or group 10 of the periodic table or an alloy containing any one of those metals as a main component, an intermediate coating of Cu or a Cu alloy, and a top-coating of Sn or an Sn alloy, the undercoating, the intermediate coating and the top-coating being formed on a surface of an electrically conductive base in this order, and the thickness of the top-coating is 1.9 times or more the thickness of the intermediate coating.

    Abstract translation: 提供具有高耐热性和良好的可插入性/可萃取性的电镀材料。 电镀材料包括属于周期表第4族,第5族,第6族,第7族,第8族,第9族或第10族的金属中的任一种的底涂层或含有这些金属中的任一种作为主要成分的合金 ,Cu或Cu合金的中间涂层以及Sn或Sn合金的顶涂层,底涂层,中间涂层和顶涂层依次形成在导电基材的表面上,并且 顶涂层的厚度为中间涂层厚度的1.9倍或更多。

    Electrostatic deflector for electron beam exposure apparatus

    公开(公告)号:US06509568B1

    公开(公告)日:2003-01-21

    申请号:US09431441

    申请日:1999-11-01

    CPC classification number: H01J37/1477 H01J2237/151

    Abstract: An electron beam radiation apparatus having an electrostatic deflector capable of deflecting the electron beam with high accuracy and with a reduced displacement of the deflection position, is disclosed. The electrostatic deflector comprises a cylindrical holding member made of an insulating material and a plurality of electrodes separately fixed from each other inside of the holding member with at least a part of the surface thereof covered with a metal film. The holding member has a plurality of wedge-shaped fixing holes corresponding to the portions of the electrodes where they are fixed, respectively, the holes having a larger diameter on the outer peripheral surface than on the inner peripheral surface of the holding member. The electrodes are fixed on the holding member in such a manner that a molten joining metal is injected in the fixing holes with the electrodes arranged on the holding member and the joining metal is hardened in close contact with the metal film of the electrodes. The electrodes fixed on the holding member are so shaped that the inner wall of the holding member is invisible from the cylinder axis of the holding member. The electrodes have a metal thin film formed, by vapor deposition, on the inner wall surface of the electrodes after being fixed on the holding member.

    Semiconductor integrated circuit device
    126.
    发明授权
    Semiconductor integrated circuit device 有权
    半导体集成电路器件

    公开(公告)号:US06483349B2

    公开(公告)日:2002-11-19

    申请号:US09987531

    申请日:2001-11-15

    CPC classification number: H03K19/018528

    Abstract: Differential amplifier circuits that receive input signals fed through external terminals are served with a first operation voltage and a second operation voltage through a first switching MOSFET and a second switching MOSFET, said first and second switching MOSFETs are turned on by a bis voltage-generating circuit when said input signal is near a central voltage of said first and second operation voltages, control voltages are formed to turn either said first switching MOSFET or said second switching MOSFET on and to turn the other one off to produce a corresponding output signal when the input signal continuously assumes said first voltage or said second voltage for a predetermined period of time, thereby to supply an input signal of a first amplitude corresponding to said first operation voltage and said second operation voltage as well as an input signal of a second amplitude corresponding to a predetermined intermediate voltage between said first operation voltage and said second operation voltage.

    Abstract translation: 接收通过外部端子馈送的输入信号的差分放大器电路通过第一开关MOSFET和第二开关MOSFET被提供第一工作电压和第二工作电压,所述第一和第二开关MOSFET由双电压发生电路 当所述输入信号接近所述第一和第二操作电压的中心电压时,形成控制电压以使所述第一开关MOSFET或所述第二开关MOSFET导通,并将另一个断开以产生相应的输出信号,当输入 信号连续地采取所述第一电压或所述第二电压预定的时间段,从而提供对应于所述第一操作电压和所述第二操作电压的第一幅度的输入信号以及对应于所述第一操作电压的第二幅度的输入信号 所述第一操作电压和所述第二操作电压之间的预定中间电压 工作电压。

    Charge pump with improved reliability
    127.
    发明授权
    Charge pump with improved reliability 失效
    充电泵具有提高的可靠性

    公开(公告)号:US06456152B1

    公开(公告)日:2002-09-24

    申请号:US09565116

    申请日:2000-05-04

    Applicant: Hitoshi Tanaka

    Inventor: Hitoshi Tanaka

    CPC classification number: G11C11/4074 G11C5/145 H02M3/073 H02M2003/077

    Abstract: A semiconductor integrated circuit device having an internal voltage generating circuit which generates a voltage two or more times higher than an operating voltage while at the same time reducing the voltage applied to a device, thereby ensuring the device reliability. In a charge pump circuit driven by supply voltage VDD, a maximum of 2VDD or a similar level voltage is applied between the drain and source of a MOSFET, the MOSFET being connected in series with a conduction MOSFET of the same type, the gate of which is supplied with VD−VDD, or a potential which is VDD lower than VD, the drain potential before its connection. The gate potential is obtained directly from a node in said charge pump which generates a voltage pulse synchronized with the voltage between the drain and source of that MOSFET, or through another rectifier device branched via a capacitor from the node.

    Abstract translation: 一种具有内部电压产生电路的半导体集成电路器件,其产生比工作电压高两倍或更多倍的电压,同时降低施加到器件的电压,从而确保器件的可靠性。 在由电源电压VDD驱动的电荷泵电路中,在MOSFET的漏极和源极之间施加最大2VDD或类似的电平电压,MOSFET与相同类型的导通MOSFET串联,其栅极 VD-VDD供电,或VDD低于VD的电位,连接前的漏极电位。 栅极电位直接从所述电荷泵中的节点获得,其产生与该MOSFET的漏极和源极之间的电压同步的电压脉冲,或通过经由电容器从该节点分支的另一个整流器件。

    Compound semiconductor device having a reduced source resistance
    129.
    发明授权
    Compound semiconductor device having a reduced source resistance 失效
    具有降低的源极电阻的复合半导体器件

    公开(公告)号:US06242327B1

    公开(公告)日:2001-06-05

    申请号:US09083398

    申请日:1998-05-22

    CPC classification number: H01L29/66863

    Abstract: A compound semiconductor device includes a low resistance source and drain region covered by a protective layer of a compound semiconductor device carrying thereon a source electrode or a drain electrode. Further, a low resistance source and drain region formed by a regrowth process of a compound semiconductor material is disclosed.

    Abstract translation: 化合物半导体器件包括由承载有源电极或漏电极的化合物半导体器件的保护层覆盖的低电阻源极和漏极区域。 此外,公开了通过化合物半导体材料的再生长工艺形成的低电阻源极和漏极区域。

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