Electron beam, generating device, and testing device
    1.
    发明授权
    Electron beam, generating device, and testing device 有权
    电子束,发电装置和检测装置

    公开(公告)号:US06911780B2

    公开(公告)日:2005-06-28

    申请号:US10434620

    申请日:2003-05-09

    摘要: An electron beam generating device, wherein a high-resistance film is formed on the outer surface of an insulator provided with a cathode for emitting thermal electrons and a grid for collecting thermal electrons and forming an electron beam to allow a feeble current to flow to the high-resistance film, thereby preventing the accumulation of thermal electrons on the insulator and discharging. The upper portion of the high-resistance film connected to a chamber supplies an approximate reference potential to the upper portion of the film, and the lower portion of the high-resistance film connected to the grid supplies almost the same potential as that of the grid to the lower portion of the film to allow a feeble current to flow to the film. The prevention of accumulation of thermal electrons on the insulator can prevent discharging, accurately control the current capacity of an electron beam, and give the electron beam generating device a longer service life.

    摘要翻译: 一种电子束产生装置,其中在设置有用于发射热电子的阴极的绝缘体的外表面上形成高电阻膜,以及用于收集热电子并形成电子束的栅格,以使微弱电流流向 高电阻膜,从而防止热电子在绝缘体上的积聚和放电。 连接到室的高电阻膜的上部向膜的上部提供近似的参考电位,并且连接到电网的高电阻膜的下部提供与电网几乎相同的电位 到薄膜的下部以允许微弱的电流流向胶片。 防止热电子在绝缘体上的堆积可以防止放电,精确地控制电子束的电流,并给予电子束产生装置更长的使用寿命。

    Electron beam exposure device
    2.
    发明授权
    Electron beam exposure device 失效
    电子束曝光装置

    公开(公告)号:US5945683A

    公开(公告)日:1999-08-31

    申请号:US906389

    申请日:1997-08-05

    摘要: An electron beam exposure device includes an alignment optical system; an electromagnetic lens system; a stage on which the sample is provided; and an electron gun. The electron gun is comprised of an electron generating source; an electron generating source heating element which generates heat for increasing the temperature of the electron generating source; a supporting member which supports the electron generating source and the electron generating source heating element; and a Wehnelt. The electron beam exposure device is provided with at least one auxiliary heating element located at respective portion thermally connected to the electron generating source heating element.

    摘要翻译: 电子束曝光装置包括对准光学系统; 电磁透镜系统; 提供样品的阶段; 和电子枪。 电子枪由电子发生源组成; 电子发生源加热元件,其产生用于增加电子发生源的温度的热量; 支撑电子发生源和电子发生源加热元件的支撑构件; 和一个Wehnelt。 电子束曝光装置设置有至少一个位于与电子发生源加热元件热连接的相应部分处的辅助加热元件。

    Electron-beam exposure device and a method of detecting a mark position
for the device
    3.
    发明授权
    Electron-beam exposure device and a method of detecting a mark position for the device 失效
    电子束曝光装置和检测装置的标记位置的方法

    公开(公告)号:US5708276A

    公开(公告)日:1998-01-13

    申请号:US600456

    申请日:1996-02-13

    摘要: An electron-beam exposure device having at least one deflector for deflecting an electron beam and detecting a position of a position-detection mark with the electron beam includes a plurality of detectors detecting electrons scattered from the position-detection mark, a plurality of amplifiers, each of the amplifiers amplifying an output of a corresponding one of the detectors, and a setting unit for setting amplification factors of the amplifiers such that a magnitude of an output from each of the amplifiers is constant irrespective of a deflected position of the electron beam at a time of detection of the position of the position-detection mark.

    摘要翻译: 具有用于偏转电子束的至少一个偏转器和用电子束检测位置检测标记的位置的电子束曝光装置包括检测从位置检测标记散射的电子的多个检测器,多个放大器, 每个放大器放大对应的一个检测器的输出,以及设置单元,用于设置放大器的放大因子,使得来自每个放大器的输出的幅度恒定,而与电子束的偏转位置无关 检测位置检测标记的位置的时间。

    Electron gun, electron beam exposure apparatus, and exposure method
    4.
    发明授权
    Electron gun, electron beam exposure apparatus, and exposure method 有权
    电子枪,电子束曝光装置和曝光方法

    公开(公告)号:US07919750B2

    公开(公告)日:2011-04-05

    申请号:US12151500

    申请日:2008-05-07

    IPC分类号: H01J29/48 H01J37/073

    摘要: An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.

    摘要翻译: 电子枪包括被配置为发射电子的电子源。 电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。 电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上,并被与电子源不同的材料覆盖。 电子枪通过向尖端施加电场而发射热场发射的电子,同时保持足够低的温度以避免电子源的材料的升华。 电子源的材料可以是六硼化镧(LaB 6)或六硼化铈(CeB 6)。 电子发射限制区域可以被碳覆盖。

    Electron beam exposure apparatus
    5.
    发明申请
    Electron beam exposure apparatus 有权
    电子束曝光装置

    公开(公告)号:US20080277598A1

    公开(公告)日:2008-11-13

    申请号:US11729673

    申请日:2007-03-28

    IPC分类号: G21K5/10

    摘要: An electron beam exposure apparatus includes: an electron gun for generating an electron beam; a deflector for deflecting the electron beam; a wafer stage; a stage position detector for detecting a position of the wafer stage; and a stage position computing unit for calculating a movement velocity of the wafer stage. On a basis of the movement velocity, the stage position computing unit calculates an amount of positional change of the wafer stage with respect to an interpolation time, and subsequently calculates an amount of positional movement of the wafer stage by sequentially adding the amount of positional change to the position of the wafer stage in synchronism with the interpolation time. Thus, the stage position computing unit calculates an amount of deflection of the electron beam corresponding to the amount of the positional movement of the wafer stage.

    摘要翻译: 电子束曝光装置包括:用于产生电子束的电子枪; 用于偏转电子束的偏转器; 晶圆台; 用于检测晶片台的位置的台位置检测器; 以及用于计算晶片台的移动速度的台位置计算单元。 基于移动速度,台位置计算单元计算晶片载物台相对于插补时间的位置变化量,并且随后通过依次添加位置变化量来计算晶片台的位置移动量 到内插时间同步到晶片台的位置。 因此,台位置计算单元计算与晶片台的位置移动量对应的电子束的偏转量。

    Electron beam exposure apparatus and method for cleaning the same
    6.
    发明申请
    Electron beam exposure apparatus and method for cleaning the same 有权
    电子束曝光装置及其清洗方法

    公开(公告)号:US20080169433A1

    公开(公告)日:2008-07-17

    申请号:US12077153

    申请日:2008-03-17

    IPC分类号: A61N5/00

    摘要: Provided is an electron beam exposure apparatus for forming a desired pattern on a sample mounted on a wafer stage by exposure with an electron beam generated form an electron gun. The electron beam exposure apparatus includes: supplying device of injecting a reducing gas into a column in which the electron gun and the wafer stage are housed; and control unit of performing control so that the injection of the reducing gas into the column is continued for a predetermined period of time. Organic contamination is combined with H generated from the reducing gas by irradiation of an electron beam, and then evaporates. Further included is supplying device of injecting an ozone gas into the column. The control unit may perform control so that the injection of the ozone gas into the column in addition to the injection of the reducing gas is continued for a predetermined period of time.

    摘要翻译: 提供一种电子束曝光装置,用于通过用电子枪产生的电子束曝光在安装在晶片台上的样品上形成所需图案。 电子束曝光装置包括:将还原气体注入到容纳电子枪和晶片台的列中的供给装置; 以及执行控制的控制单元,使得将还原气体注入到所述列中持续预定时间段。 有机污染与通过照射电子束从还原气体生成的H结合,然后蒸发。 还包括将臭氧气体注入塔的供给装置。 控制单元可以执行控制,使得除了注入还原气体之外,将臭氧气体注入到塔中持续预定的时间段。

    Electron beam generating apparatus and electron beam exposure apparatus
    7.
    发明授权
    Electron beam generating apparatus and electron beam exposure apparatus 有权
    电子束发生装置和电子束曝光装置

    公开(公告)号:US06727658B2

    公开(公告)日:2004-04-27

    申请号:US10383953

    申请日:2003-03-07

    IPC分类号: G09G310

    摘要: An electron beam generating apparatus for generating a plurality of electron beams, which includes: a plurality of cathodes for generating thermoelectrons; a cathode power supply unit for applying negative voltage to the cathodes so as to emit the thermoelectrons from the cathodes; a plurality of grids, which correspond to the plurality of cathodes respectively, for focusing the thermoelectrons emitted from each of the plurality of cathodes, and shaping the plurality of electron beams; and an insulator on which the plurality of cathodes and the plurality of grids are attached.

    摘要翻译: 一种用于产生多个电子束的电子束产生装置,包括:多个用于产生热电子的阴极; 用于向阴极施加负电压以从阴极发射热电子的阴极电源单元; 分别对应于多个阴极的多个栅格,用于聚焦从多个阴极中的每一个发射的热电子,并对多个电子束进行成形; 以及绝缘体,多个阴极和多个栅极连接在该绝缘体上。

    Multi-column electron beam exposure apparatus and magnetic field generation device
    8.
    发明授权
    Multi-column electron beam exposure apparatus and magnetic field generation device 有权
    多列电子束曝光装置及磁场发生装置

    公开(公告)号:US08390201B2

    公开(公告)日:2013-03-05

    申请号:US12928899

    申请日:2010-12-22

    IPC分类号: H01J25/50

    摘要: A multi-column electron beam exposure apparatus includes: multiple column cells; an electron beam converging unit in which two annular permanent magnets and electromagnetic coils are surrounded by a ferromagnetic frame, the two annular permanent magnets being magnetized in an optical axis direction and symmetrical about the optical axis, where the electromagnetic coils adjust magnetic fields of the annular permanent magnets; and a substrate provided with circular apertures through which electron beams used in the column cells pass, respectively, where the electron beam converging unit is disposed in each of the circular apertures. The two annular permanent magnets may be disposed one above the other in the optical axis direction, and the electromagnetic coils may be provided inside or outside the annular permanent magnets in their radial direction.

    摘要翻译: 多列电子束曝光装置包括:多列细胞; 电子束会聚单元,其中两个环形永磁体和电磁线圈被铁磁框架包围,两个环形永磁体沿光轴方向被磁化并且围绕光轴对称,其中电磁线圈调节环形磁场 永久磁铁 以及设置有圆孔的基板,分别在列单元中使用的电子束通过其中电子束会聚单元设置在每个圆形孔中。 两个环形永久磁铁可以在光轴方向上彼此上下配置,并且电磁线圈可以设置在环形永磁体的径向内侧或外侧。

    Electron gun, electron beam exposure apparatus, and exposure method
    9.
    发明申请
    Electron gun, electron beam exposure apparatus, and exposure method 有权
    电子枪,电子束曝光装置和曝光方法

    公开(公告)号:US20080315089A1

    公开(公告)日:2008-12-25

    申请号:US12151500

    申请日:2008-05-07

    IPC分类号: H01J3/02

    摘要: An electron gun includes an electron source configured to emit electrons. The electron source includes an electron emission region configured to emit the electrons and an electron emission restrictive region configured to restrict emission of the electrons. The electron emission restrictive region is located on a side surface of the electron source except an electron emission surface on a tip of the electron source and is covered with a different material from the electron source. The electron gun emits thermal field-emitted electrons by applying an electric field to the tip while maintaining a sufficiently low temperature to avoid sublimation of a material of the electron source. The material of the electron source may be lanthanum hexaboride (LaB6) or cerium hexaboride (CeB6). The electron emission restrictive region may be covered with carbon.

    摘要翻译: 电子枪包括被配置为发射电子的电子源。 电子源包括配置为发射电子的电子发射区域和被配置为限制电子发射的电子发射限制区域。 电子发射限制区域位于电子源的除了电子源的尖端上的电子发射表面以外的电子源的侧表面上,并被与电子源不同的材料覆盖。 电子枪通过向尖端施加电场而发射热场发射的电子,同时保持足够低的温度以避免电子源的材料的升华。 电子源的材料可以是六硼化镧(LaB 6)或六硼化铈(CeB 6)。 电子发射限制区域可以被碳覆盖。

    Electrostatic deflector, for electron beam exposure apparatus, with reduced charge-up
    10.
    发明授权
    Electrostatic deflector, for electron beam exposure apparatus, with reduced charge-up 失效
    静电偏转器,用于电子束曝光设备,具有减小的充电

    公开(公告)号:US06268606B1

    公开(公告)日:2001-07-31

    申请号:US09337795

    申请日:1999-06-22

    IPC分类号: H01J3700

    摘要: An electrostatic deflector of an electron beam exposure apparatus is disclosed. A cylindrical holding member is made of an insulating material. An electrode including a plurality of electrode members fixedly arranged in spaced relationship to each other and having at least a portion of the surface thereof grown with a metal film is disposed inside the holding member. The electrode members each formed with a metal film on the surface thereof are made of a conductive ceramic having a resistivity selected at least in the range of 0.001 &OHgr;•cm to 1000 &OHgr;•cm.

    摘要翻译: 公开了电子束曝光设备的静电偏转器。 圆柱形保持构件由绝缘材料制成。 一种电极,其包括以彼此间隔开的关系固定地布置并且其表面的至少一部分由金属膜生长的多个电极部件设置在保持部件的内部。 每个在其表面上由金属膜形成的电极构件由电阻率选择为至少在0.001欧姆·厘米到1000欧姆·厘米的范围内的导电陶瓷制成。