摘要:
Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要:
An apparatus for detecting defects on a specimen including am illumination optical unit which obliquely projects a laser onto a region which is longer in one direction than in a direction transverse to said one direction on a surface of a specimen, a table unit which mounts said specimen and which is movable, a detection optical unit which detects with an image sensor an image of light formed by light reflected from said specimen in both directions of the one direction and the direction transverse and which reflected light in both directions is formed on said image sensor while said table is moving, a signal processor which processes a signal outputted from said image sensor of said detection optical unit to extract defects of said specimen. A display unit which displays information of defects extracted by said signal processor.
摘要:
In order to inspect a substance to be detected such as a foreign substance in accordance with the condition of the surface of a sample to be inspected such as a semiconductor substrate manufactured in various manufacturing processes under a suitable inspection condition, this method includes the steps of: inspecting a substance to be detected on a sample to be inspected under a plurality inspection conditions, which are previously set, as a single unit to detect at least the data of a detected substance for each of the plurality of inspection conditions; checking the data of the detected substance for the respective inspection conditions against each other to make check data; analyzing the detected substance based on the check data of the detected substance to classify the detected substance; adding the data of classified detected substance to the coordinate data of the detected substance for the respective inspection conditions to make data relating to the classified detected substance for the respective inspection conditions; and selecting a suitable inspection condition based on the data relating to the classified detected substance for the respective inspection conditions.
摘要:
Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要:
A pattern inspection system for inspecting a substrate surface on which a predetermined pattern is formed with radiation of an electron beam and an optical beam. the pattern inspection system includes a radiation and which radiates an electron beam to the substrate, a detection unit which detects a secondarily generated signal attributable to the radiation of the electron beam, a retrieval unit which retrieves an image from the signal detected by the detection unit, and an image processing unit which classifies the retrieved image depending on a type of the image.
摘要:
An apparatus and method for detecting foreign particle and defect on an object in detection by means of a laser beam, in which the laser beams of different wavelengths are irradiated onto the surface of the object in detection from different angles and the state of foreign particle and defect is separately detected according to the output level of the scattered light reflected from that surface. Further, it is arranged such that the scattered light reflected from the object onto which the laser beam is irradiated from the sole source or the plurality of sources is detected in plural directions, which detecting result is compared for the detection of the directivity of said scattered light in reflection.
摘要:
There are provided an inline inspection system and inspection method for inspecting the substrate surface on which semiconductors and circuit patterns are formed by radiating thereto white beam, laser beam or electron beam, and reviewing, inspecting and discriminating the detected roughness and figure defect, particle and moreover electrical defect on the surface with higher accuracy within a short period of time with the same instrument. Thereby, automatic movement to the position to be reviewed, acquisition of image and classification can be realized. On the occasion of identifying the position to be reviewed on a sample and forming an image through irradiation of electron beam on the basis of the positional information of defect detected with the other inspection instrument, an electrical defect can be reviewed with the voltage contrast mode by designating the electron beam irradiation condition, detectors and detecting condition depending on a kind of defect to be reviewed. The image obtained is automatically classified in the image processing unit and the result is then additionally output to the defect file.
摘要:
A defect detecting apparatus including an illumination system for radiating a light of a plane wave linearly to a substrate having repetitive patterns of different pitches; a focusing optical system for focusing a light image reflected from the substrate thus illuminated by the illumination system; a spatial filter disposed intermediate the focusing optical system so as to shield a diffraction light from repetitive patterns of a small pitch on the substrate; a detector for detecting the light image formed by the focusing optical system; an erasing means for comparing and erasing signals which are generated on the basis of repetitive patterns of a large pitch and obtained through the spatial filter, out of signals detected by the detector; and a defect detecting means for detecting defects on the substrate in accordance with a signal detected by the detector, as well as a method applied to the said apparatus.
摘要:
In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.
摘要:
Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.