Method of inspecting a semiconductor device and an apparatus thereof
    123.
    发明授权
    Method of inspecting a semiconductor device and an apparatus thereof 有权
    检查半导体器件的方法及其装置

    公开(公告)号:US06888959B2

    公开(公告)日:2005-05-03

    申请号:US09791682

    申请日:2001-02-26

    摘要: In order to inspect a substance to be detected such as a foreign substance in accordance with the condition of the surface of a sample to be inspected such as a semiconductor substrate manufactured in various manufacturing processes under a suitable inspection condition, this method includes the steps of: inspecting a substance to be detected on a sample to be inspected under a plurality inspection conditions, which are previously set, as a single unit to detect at least the data of a detected substance for each of the plurality of inspection conditions; checking the data of the detected substance for the respective inspection conditions against each other to make check data; analyzing the detected substance based on the check data of the detected substance to classify the detected substance; adding the data of classified detected substance to the coordinate data of the detected substance for the respective inspection conditions to make data relating to the classified detected substance for the respective inspection conditions; and selecting a suitable inspection condition based on the data relating to the classified detected substance for the respective inspection conditions.

    摘要翻译: 为了在适当的检查条件下,根据在各种制造工序中制造的半导体衬底等被检测样品的表面状况,检查异物等异物,该方法包括以下步骤: 在预先设定的多个检查条件下检查待检测样品上检测到的物质作为单个单元,至少检测多个检查条件中检测物质的数据; 检查相应检查条件的检测物质的数据,以进行检查数据; 基于检测到的物质的检查数据分析检测到的物质以对检测到的物质进行分类; 将各种检测条件的检测物质的坐标数据相加,对各检查条件进行分类检测物质的数据的添加; 以及基于与各检查条件的分类检测物质有关的数据来选择合适的检查条件。

    Method and its apparatus for inspecting particles or defects of a semiconductor device
    124.
    发明申请
    Method and its apparatus for inspecting particles or defects of a semiconductor device 有权
    用于检查半导体器件的颗粒或缺陷的方法及其装置

    公开(公告)号:US20050024633A1

    公开(公告)日:2005-02-03

    申请号:US10933977

    申请日:2004-09-03

    IPC分类号: G01N21/88 G01N21/94

    摘要: Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

    摘要翻译: 通常,作为检测结果,粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。 对于制造过程中的故障采取对策,分析检查装置检测到的颗粒/缺陷。 由于检查装置输出大量检测到的粒子/缺陷,所以需要巨大的时间来分析检测到的粒子/缺陷,从而导致制造过程中的失败的对策的延迟。 在本发明中,用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。 数据处理电路从检查结果统计中指出故障原因,并显示检查结果信息。 通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析,以统计学评价检测出的粒子。

    Method of inspecting pattern and inspecting instrument
    125.
    发明授权
    Method of inspecting pattern and inspecting instrument 有权
    检查模式和检验仪器的方法

    公开(公告)号:US06777677B2

    公开(公告)日:2004-08-17

    申请号:US10463576

    申请日:2003-06-18

    IPC分类号: H01J3728

    摘要: A pattern inspection system for inspecting a substrate surface on which a predetermined pattern is formed with radiation of an electron beam and an optical beam. the pattern inspection system includes a radiation and which radiates an electron beam to the substrate, a detection unit which detects a secondarily generated signal attributable to the radiation of the electron beam, a retrieval unit which retrieves an image from the signal detected by the detection unit, and an image processing unit which classifies the retrieved image depending on a type of the image.

    摘要翻译: 一种图案检查系统,用于检查其上形成有电子束和光束的辐射的预定图案的基板表面。 图案检查系统包括辐射并且向基板辐射电子束,检测单元,其检测归因于电子束的辐射的次要生成的信号;检索单元,其从由检测单元检测到的信号中检索图像 以及图像处理单元,其根据图像的类型对检索到的图像进行分类。

    Apparatus for detecting foreign particle and defect and the same method
    126.
    发明授权
    Apparatus for detecting foreign particle and defect and the same method 失效
    用于检测外来颗粒和缺陷的设备和相同的方法

    公开(公告)号:US06731384B2

    公开(公告)日:2004-05-04

    申请号:US09973000

    申请日:2001-10-10

    IPC分类号: G01N2100

    CPC分类号: G01N21/94 G01N21/8806

    摘要: An apparatus and method for detecting foreign particle and defect on an object in detection by means of a laser beam, in which the laser beams of different wavelengths are irradiated onto the surface of the object in detection from different angles and the state of foreign particle and defect is separately detected according to the output level of the scattered light reflected from that surface. Further, it is arranged such that the scattered light reflected from the object onto which the laser beam is irradiated from the sole source or the plurality of sources is detected in plural directions, which detecting result is compared for the detection of the directivity of said scattered light in reflection.

    摘要翻译: 一种用于通过激光束检测物体中的异物和在物体上的缺陷的装置和方法,其中不同波长的激光束从不同的角度和外来粒子的状态被检测到被检测物体的表面,并且 根据从该表面反射的散射光的输出电平分别检测缺陷。 另外,从多个方向检测从单个源或多个源照射激光束的物体所反射的散射光,将该检测结果进行比较,以检测所述散射的方向性 光反射。

    Method of inspecting pattern and inspecting instrument
    127.
    发明授权
    Method of inspecting pattern and inspecting instrument 有权
    检查模式和检验仪器的方法

    公开(公告)号:US06583414B2

    公开(公告)日:2003-06-24

    申请号:US09725900

    申请日:2000-11-30

    IPC分类号: H01J37147

    摘要: There are provided an inline inspection system and inspection method for inspecting the substrate surface on which semiconductors and circuit patterns are formed by radiating thereto white beam, laser beam or electron beam, and reviewing, inspecting and discriminating the detected roughness and figure defect, particle and moreover electrical defect on the surface with higher accuracy within a short period of time with the same instrument. Thereby, automatic movement to the position to be reviewed, acquisition of image and classification can be realized. On the occasion of identifying the position to be reviewed on a sample and forming an image through irradiation of electron beam on the basis of the positional information of defect detected with the other inspection instrument, an electrical defect can be reviewed with the voltage contrast mode by designating the electron beam irradiation condition, detectors and detecting condition depending on a kind of defect to be reviewed. The image obtained is automatically classified in the image processing unit and the result is then additionally output to the defect file.

    摘要翻译: 提供了一种在线检查系统和检查方法,用于通过向其发射白光束,激光束或电子束来检查其上形成有半导体和电路图案的衬底表面,并且检查和检查检测到的粗糙度和图形缺陷,颗粒和 此外,在相同仪器的短时间内,表面具有较高精度的电气缺陷。 因此,可以实现自动移动到要检查的位置,获取图像和分类。 在通过基于用其他检查仪检测到的缺陷的位置信息的基础上,通过照射电子束来识别要检查的位置并形成图像的情况下,可以通过电压对比度模式来检查电缺陷 指定电子束照射条件,检测器和检测条件取决于要检查的缺陷的种类。 所获得的图像被自动分类到图像处理单元中,然后将结果另外输出到缺陷文件。

    Inspection method and inspection system using charged particle beam
    129.
    发明授权
    Inspection method and inspection system using charged particle beam 有权
    使用带电粒子束的检查方法和检查系统

    公开(公告)号:US08153969B2

    公开(公告)日:2012-04-10

    申请号:US12323167

    申请日:2008-11-25

    IPC分类号: G01N23/00

    摘要: In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.

    摘要翻译: 在具有高分辨能力的电浸透镜中,加速从样本产生的二次电子,以抑制由物镜施加到其上的二次电子的旋转作用对二次电子的能级的依赖性,并且当选择性地检测低角度和高角度时 通过设置在电子源和物镜之间的环形检测器从二次电子产生位置观察的仰角和方位的分量,二次电子通过E×B偏转器被调节和偏转,使得中心轴线 在加速度下精细收敛的二次电子与低仰角信号检测系统的中心轴一致,二次电子偏离高仰角信号检测系统的孔径。

    Method and Its Apparatus for Inspecting Particles or Defects of a Semiconductor Device
    130.
    发明申请
    Method and Its Apparatus for Inspecting Particles or Defects of a Semiconductor Device 审中-公开
    检测颗粒的方法及其装置或半导体器件的缺陷

    公开(公告)号:US20120062890A1

    公开(公告)日:2012-03-15

    申请号:US13298079

    申请日:2011-11-16

    IPC分类号: G01N15/02

    摘要: Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.

    摘要翻译: 通常,作为检测结果,粒子/缺陷检查装置输出检测出的粒子/缺陷的总数。 对于制造过程中的故障采取对策,分析检查装置检测到的颗粒/缺陷。 由于检查装置输出大量检测到的粒子/缺陷,所以需要巨大的时间来分析检测到的粒子/缺陷,从而导致制造过程中的失败的对策的延迟。 在本发明中,用于光学检查颗粒或缺陷的装置在检查结果中将颗粒或缺陷尺寸与故障原因相关联。 数据处理电路从检查结果统计中指出故障原因,并显示检查结果信息。 通过设定用于识别半导体装置等上的各区域的故障的阈值来进行故障分析,以统计学评价检测出的粒子。