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公开(公告)号：US20170012062A1
公开(公告)日：2017-01-12
申请号：US15275687
申请日：2016-09-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Hiroyuki Miyake , Hideaki Shishido , Jun Koyama
IPC: H01L27/12 , H01L29/786
CPC classification number: H01L27/1225 , H01L27/1255 , H01L29/7869
Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode. The second light-transmitting conductive film is formed over the same surface as the light-transmitting semiconductor film of the transistor and is a metal oxide film containing a dopant.
Abstract translation: 提供一种半导体装置，其包括在提高开口率的同时增加充电容量的电容器。 此外，提供消耗更少功率的半导体器件。 一种晶体管，其包括透光半导体膜，在一对电极之间设置有电介质膜的电容器，设置在所述透光半导体膜上的绝缘膜和第一透光性导电膜， 包括在绝缘膜上。 电容器包括用作一个电极的第一透光导电膜，用作电介质的绝缘膜和面向第一透光导电膜的第二透光导电膜，绝缘膜位于其间并具有功能 作为另一个电极。 第二透光导电膜形成在与晶体管的透光半导体膜相同的表面上，并且是含有掺杂剂的金属氧化物膜。
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公开(公告)号：US09525017B2
公开(公告)日：2016-12-20
申请号：US14848698
申请日：2015-09-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hideaki Shishido , Hiroyuki Miyake , Kouhei Toyotaka , Makoto Kaneyasu
IPC: H01L27/32
CPC classification number: H01L27/124 , G02F1/134309 , G02F1/134336 , G02F1/13624 , G02F1/136277 , G02F1/136286 , G02F2201/52 , G09G3/2085 , G09G3/3607 , G09G3/3611 , G09G3/3659 , G09G2300/0465 , G09G2300/08 , H01L27/1255 , H01L27/3211 , H01L27/3213 , H01L27/3216 , H01L27/3218 , H01L27/323 , H01L27/3244 , H01L27/3248 , H01L27/326 , H01L27/3262 , H01L27/3276 , H01L33/62
Abstract: Provided is a display device with high resolution, high display quality, or high aperture ratio. A pixel includes three subpixels and is electrically connected to two gate lines. One of the gate lines is electrically connected to a gate of a transistor included in each of the two subpixels, and the other gate line is electrically connected to a gate of a transistor included in the other subpixel. Display elements of the three subpixels are arranged in the same direction. Three pixel electrodes of the three subpixels are arranged in the same direction.
Abstract translation: 提供了具有高分辨率，高显示质量或高开口率的显示装置。 像素包括三个子像素，并且电连接到两个栅极线。 栅极线之一电连接到两个子像素中的每一个中包括的晶体管的栅极，另一个栅极线电连接到另一子像素中包括的晶体管的栅极。 三个子像素的显示元件被排列成相同的方向。 三个子像素的三个像素电极被布置在相同的方向上。
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公开(公告)号：US09508709B2
公开(公告)日：2016-11-29
申请号：US14640235
申请日：2015-03-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroyuki Miyake
IPC: G09G3/3233 , H01L27/06 , H01L27/32 , H01L27/12 , G09G3/32
CPC classification number: H01L27/1225 , G09G3/3233 , G09G3/3275 , G09G2300/0852 , G09G2300/0861 , G09G2320/045 , H01L27/06 , H01L27/0629 , H01L27/124 , H01L27/1255 , H01L27/3241 , H01L33/62
Abstract: An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.
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124.发明授权公开(公告)号：US09490268B2
公开(公告)日：2016-11-08
申请号：US15075765
申请日：2016-03-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Hiroyuki Miyake , Takahiro Sato , Masami Jintyou
IPC: H01L29/04 , H01L29/786 , H01L27/12
CPC classification number: H01L27/1225 , G02F1/13306 , G02F1/133345 , G02F1/13338 , G02F1/134336 , G02F1/136286 , G02F1/1368 , G02F2201/123 , G06F3/041 , G06F2203/04103 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/7869
Abstract: A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.
Abstract translation: 提供了包括晶体管和连接部分的半导体器件。 晶体管包括栅电极，栅电极上的第一绝缘膜，第一绝缘膜上的氧化物半导体膜和与栅电极重叠的位置，电连接到氧化物半导体膜的源极和漏极; 连接部包括与形成有栅电极的表面相同的表面上的第一布线，与形成有源极和漏极的表面相同的表面上的第二布线，以及连接第一布线的第一布线 接线和第二个接线。 第二配线的上端部和下端部之间的距离比源电极和漏电极的上端部与下端部的距离长。
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公开(公告)号：US09478187B2
公开(公告)日：2016-10-25
申请号：US14714473
申请日：2015-05-18
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Hiroyuki Miyake , Kouhei Toyotaka
CPC classification number: G09G3/3677 , G09G3/3266 , G09G3/3648 , G09G3/3696 , G09G5/18 , G09G2300/0404 , G09G2300/0413 , G09G2310/0205 , G09G2310/0286 , G09G2310/0291 , G11C19/28 , H03K3/356026
Abstract: Two gate drivers each comprising a shift register and a demultiplexer including single conductivity type transistors are provided on left and right sides of a pixel portion. Gate lines are alternately connected to the left-side and right-side gate drivers in every M rows. The shift register includes k first unit circuits connected in cascade. The demultiplexer includes k second unit circuits to each of which a signal is input from the first unit circuit and to each of which M gate lines are connected. The second unit circuit selects one or more wirings which output an input signal from the first unit circuit among M gate lines, and outputs the signal from the first unit circuit to the selected wiring(s). Since gate signals can be output from an output of a one-stage shift register to the M gate lines, the width of the shift register can be narrowed.
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Patent Agency Ranking
公开(公告)号：US09425220B2
公开(公告)日：2016-08-23
申请号：US14010841
申请日：2013-08-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroyuki Miyake , Shunpei Yamazaki
IPC: H01L29/12 , H01L27/12 , G02F1/1362
CPC classification number: H01L27/1255 , G02F1/136213 , G02F1/136286 , G02F2201/40
Abstract: A semiconductor device having a high aperture ratio, including a capacitor with increased capacitance, and consuming low power is provided. The semiconductor device includes pixels defined by x (x is an integer of 2 or more) scan lines and y (y is an integer of 1 or more) signal lines, and each of the pixels includes a transistor, and a capacitor. The transistor includes a semiconductor film having a light-transmitting property. The capacitor includes a dielectric film between a pair of electrodes. In the capacitor between an (m−1)-th (m is an integer of 2 or more and x or less) scan line and an m-th scan line, a semiconductor film on the same surface as the semiconductor film having a light-transmitting property of the transistor serves as one of the pair of electrodes and is electrically connected to the (m−1)-th scan line.
Abstract translation: 提供具有高开口率的半导体器件，包括具有增加的电容的电容器，并且消耗低功率。 半导体器件包括由x（x是2以上的整数）扫描线和y（y是1以上的整数）信号线所定义的像素，并且每个像素包括晶体管和电容器。 晶体管包括具有透光性的半导体膜。 电容器包括一对电极之间的电介质膜。 在第（m-1）（m为2以上且x以下的整数）扫描线和第m扫描线之间的电容器中，与具有光的半导体膜相同的表面上的半导体膜 晶体管的发射特性用作一对电极之一，并且电连接到第（m-1）扫描线。
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公开(公告)号：US09368090B2
公开(公告)日：2016-06-14
申请号：US14803467
申请日：2015-07-20
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Jun Koyama , Hiroyuki Miyake , Shunpei Yamazaki
CPC classification number: G09G5/18 , G02F1/13624 , G02F1/136286 , G06F3/0412 , G06F3/044 , G06F3/045 , G09G3/006 , G09G3/3413 , G09G3/3426 , G09G3/3648 , G09G3/3674 , G09G3/3696 , G09G2300/0408 , G09G2300/0426 , G09G2300/08 , G09G2310/0235 , G09G2310/0286
Abstract: To increase the frequency of input of image signals in terms of design in a field-sequential liquid crystal display device. Image signals are concurrently supplied to pixels provided in a plurality of rows among pixels arranged in matrix in a pixel portion of the liquid crystal display device. Thus, the frequency of input of an image signal to each pixel can be increased without change in response speed of a transistor or the like included in the liquid crystal display device.
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公开(公告)号：US20160079333A1
公开(公告)日：2016-03-17
申请号：US14848698
申请日：2015-09-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hideaki Shishido , Hiroyuki Miyake , Kouhei Toyotaka , Makoto Kaneyasu
IPC: H01L27/32
CPC classification number: H01L27/124 , G02F1/134309 , G02F1/134336 , G02F1/13624 , G02F1/136277 , G02F1/136286 , G02F2201/52 , G09G3/2085 , G09G3/3607 , G09G3/3611 , G09G3/3659 , G09G2300/0465 , G09G2300/08 , H01L27/1255 , H01L27/3211 , H01L27/3213 , H01L27/3216 , H01L27/3218 , H01L27/323 , H01L27/3244 , H01L27/3248 , H01L27/326 , H01L27/3262 , H01L27/3276 , H01L33/62
Abstract: Provided is a display device with high resolution, high display quality, or high aperture ratio. A pixel includes three subpixels and is electrically connected to two gate lines. One of the gate lines is electrically connected to a gate of a transistor included in each of the two subpixels, and the other gate line is electrically connected to a gate of a transistor included in the other subpixel. Display elements of the three subpixels are arranged in the same direction. Three pixel electrodes of the three subpixels are arranged in the same direction.
Abstract translation: 提供了具有高分辨率，高显示质量或高开口率的显示装置。 像素包括三个子像素，并且电连接到两个栅极线。 栅极线之一电连接到两个子像素中的每一个中包括的晶体管的栅极，另一个栅极线电连接到另一子像素中包括的晶体管的栅极。 三个子像素的显示元件被排列成相同的方向。 三个子像素的三个像素电极被布置在相同的方向上。
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公开(公告)号：US09263472B2
公开(公告)日：2016-02-16
申请号：US14244440
申请日：2014-04-03
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Junichiro Sakata , Hiroyuki Miyake , Hideaki Kuwabara , Tatsuya Takahashi
IPC: H01L29/04 , H01L27/12 , H01L29/45 , G02F1/1368 , H01L21/02
CPC classification number: H01L27/1225 , G02F1/1368 , H01L21/02554 , H01L21/02565 , H01L27/124 , H01L27/1251 , H01L27/1255 , H01L29/45 , H01L29/78645
Abstract: An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.
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公开(公告)号：US09245935B2
公开(公告)日：2016-01-26
申请号：US14208689
申请日：2014-03-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Hiroyuki Miyake
CPC classification number: H01L27/3262 , G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2310/0262 , G09G2320/0233 , G09G2320/0295
Abstract: A light-emitting device in which electrical characteristics of a transistor in a pixel can be monitored without degrading display quality is provided. The light-emitting device includes a plurality of pixels each comprising a pixel circuit. A pixel circuit included in a first pixel is electrically connected to a light-emitting element included in a second pixel through a first switch. A pixel circuit included in the second pixel is electrically connected to the light-emitting element included in the second pixel through a second switch and to a light-emitting element included in a third pixel through a third switch. The pixel circuits are connected to a correction circuit through switches.
Abstract translation: 提供了一种可以监视像素中的晶体管的电特性而不降低显示质量的发光器件。 发光装置包括多个像素，每个像素包括像素电路。 包括在第一像素中的像素电路通过第一开关电连接到包括在第二像素中的发光元件。 包括在第二像素中的像素电路通过第二开关和包括在第三像素中的发光元件通过第三开关电连接到包括在第二像素中的发光元件。 像素电路通过开关连接到校正电路。
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